Reentrant mound formation in GaAs(001) homoepitaxy observed by ex situ atomic force microscopy

Unidirectional lateral nanowire formation during the epitaxial growth of GaAsBi on vicinal substrates

We report on enhanced control of the growth of lateral GaAs nanowires (NWs) embedded in epitaxial (100) GaAsBi thin films enabled by the use of vicinal substrates and the growth-condition dependent role of Bi as a surfactant. Enhanced step-flow growth is achieved through the use of vicinal substrates and yields unidirectional nanowire growth. The addition of Bi during GaAsBi growth enhances Ga adatom diffusion anisotropy and modifies incorporation rates at steps in comparison to GaAs growth yielding lower density but longer NWs. The NWs grown on vicinal substrates grew unidirectionally towards the misorientation direction when Bi was present. The III/V flux ratio significantly impacts the size, shape and density of the resulting NWs. These results suggest that utilizing growth conditions which enhance step-flow growth enable enhanced control of lateral nanostructures.

Faceted nanostructure arrays with extreme regularity by self-assembly of vacancies

Semiconductor quantum dots and wires are important building blocks for future electronic and optoelectronic devices. The common way of producing semiconductor nanostructures is by molecular beam epitaxy (MBE). In this additive growth process atoms are deposited onto crystalline surfaces and self-assemble into 3D structures. Here we present a subtractive process, in which surface vacancies are created by ion impacts. On terraces of crystalline surfaces their nucleation forms depressions which coarsen and finally lead to a self-organized 3D morphology. It is shown that this kind of spontaneous pattern formation is inherent to the ion induced erosion process on crystalline surfaces and is analogous to 3D growth by MBE. However, novel facets are found due to slightly different energetics and kinetics of ad-atoms and surface vacancies, especially at Ehrlich-Schwoebel step-edge barriers. Depending on the crystal orientation, three-fold, four-fold, six-fold symmetry, as well as extremely regular periodic nanogrooves can be produced on different orientations of group IV (Si, Ge) and III-V (GaAs, InAs) semiconductors.

Interplay of instabilities in mounded surface growth

We numerically study a one-dimensional conserved growth equation with competing linear (Ehrlich-Schwoebel) and nonlinear instabilities. As a control parameter is varied, this model exhibits a nonequilibrium phase transition between two mounded states, one of which exhibits slope selection and the other does not. The coarsening behavior of the mounds in these two phases is studied in detail. In the absence of noise, the steady-state configuration depends crucially on which of the two instabilities dominates the early time behavior.

Mound formation and coarsening from a nonlinear instability in surface growth

We study spatially discretized versions of a class of one-dimensional, nonequilibrium, conserved growth equations for both nonconserved and conserved noise using numerical integration. An atomistic version of these growth equations is also studied using stochastic simulation. The models with nonconserved noise are found to exhibit mound formation and power-law coarsening with slope selection for a range of values of the model parameters. Unlike previously proposed models of mound formation, the Ehrlich-Schwoebel step-edge barrier, usually modeled as a linear instability in growth equations, is absent in our models. Mound formation in our models occurs due to a nonlinear instability in which the height (depth) of spontaneously generated pillars (grooves) increases rapidly if the initial height (depth) is sufficiently large. When this instability is controlled by the introduction of a nonlinear control function, the system exhibits a first-order dynamical phase transition from a rough self-affine phase to a mounded one as the value of the parameter that measures the effectiveness of control is decreased. We define an "order parameter" that may be used to distinguish between these two phases. In the mounded phase, the system exhibits power-law coarsening of the mounds in which a selected slope is retained at all times. The coarsening exponents for the spatially discretized continuum equation and the atomistic model are found to be different. An explanation of this difference is proposed and verified by simulations. In the spatially discretized growth equation with conserved noise, we find the curious result that the kinetically rough and mounded phases are both locally stable in a region of parameter space. In this region, the initial configuration of the system determines its steady-state behavior.

Evidence from the surface morphology for nonlinear growth of epitaxial GaAs films

The mesoscale morphology of homoepitaxial GaAs surfaces is explained with an anisotropic and nonlinear Kardar-Parisi-Zhang (KPZ) model in which adatoms are incorporated into the film from a metastable surface layer. Evaporation-condensation between the film and the metastable layer is proposed as the microscopic physical origin of the KPZ description, as well as of the excess noise observed in the power spectral density. The parabolic mounds observed experimentally in films grown on rough substrates are in good agreement with the surface shape expected from the solution of the KPZ equation in the large amplitude limit.