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Tian S, Wang B, Li B, Guo Y, Zhang S, Dai Y. Defect dipole stretching enables ultrahigh electrostrain. SCIENCE ADVANCES 2024; 10:eadn2829. [PMID: 38985865 PMCID: PMC11235158 DOI: 10.1126/sciadv.adn2829] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2023] [Accepted: 06/05/2024] [Indexed: 07/12/2024]
Abstract
Piezoelectric actuators have been extensively utilized as micro-displacement devices because of their advantages of large output displacement, high sensitivity, and immunity to electromagnetic interference. Here, we propose a straightforward approach to design <110>-oriented defect dipoles by introducing A-site vacancies and oxygen vacancies in (K0.48Na0.52)0.99NbO2.995 ceramics. As a result, we achieve ultrahigh electrostrains of 0.7% at 20 kV cm-1 (with an effective piezoelectric strain coefficient d33* = 3500 pm V-1), outperforming the performance of existing piezoelectric ceramics at the same driving field. The exceptional electrostrain is primarily attributed to the large stretching of defect dipoles when subjected to an applied electric field, a phenomenon that has been experimentally confirmed. Moreover, the strong interaction between these defect dipoles and <110> spontaneous polarizations plays a critical role in minimizing hysteresis and ensuring excellent fatigue resistance. Our findings present a practical and effective strategy for developing high-performance piezoelectric materials tailored for advanced actuator applications.
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Affiliation(s)
- Shuo Tian
- School of Materials, Sun Yat-sen University, Shenzhen 518107, P. R. China
| | - Binquan Wang
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
| | - Bin Li
- School of Materials, Sun Yat-sen University, Shenzhen 518107, P. R. China
| | - Yiping Guo
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
| | - Shujun Zhang
- Institute for Superconducting and Electronic Materials, Faculty of Engineering and Information Sciences, University of Wollongong, Wollongong, NSW 2500, Australia
| | - Yejing Dai
- School of Materials, Sun Yat-sen University, Shenzhen 518107, P. R. China
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2
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Enhancing properties of lead-free ferroelectric BaTiO3 through doping. Ann Ital Chir 2022. [DOI: 10.1016/j.jeurceramsoc.2022.05.023] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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3
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Liu L, Zhang Y. Effect of initial particle size on grain microstructure of textured ferroelectric ceramics: A phase-field method and brush technique. Ann Ital Chir 2022. [DOI: 10.1016/j.jeurceramsoc.2022.05.050] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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4
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Wang Y, Li Z, Ma Z, Wang L, Guo X, Liu Y, Yao B, Zhang F, Zhu L. Phase Structure and Electrical Properties of Sm-Doped BiFe 0.98Mn 0.02O 3 Thin Films. NANOMATERIALS 2021; 12:nano12010108. [PMID: 35010058 PMCID: PMC8746624 DOI: 10.3390/nano12010108] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/07/2021] [Revised: 12/22/2021] [Accepted: 12/24/2021] [Indexed: 11/18/2022]
Abstract
Bi1−xSmxFe0.98Mn0.02O3 (x = 0, 0.02, 0.04, 0.06; named BSFMx) (BSFM) films were prepared by the sol-gel method on indium tin oxide (ITO)/glass substrate. The effects of different Sm content on the crystal structure, phase composition, oxygen vacancy content, ferroelectric property, dielectric property, leakage property, leakage mechanism, and aging property of the BSFM films were systematically analyzed. X-ray diffraction (XRD) and Raman spectral analyses revealed that the sample had both R3c and Pnma phases. Through additional XRD fitting of the films, the content of the two phases of the sample was analyzed in detail, and it was found that the Pnma phase in the BSFMx = 0 film had the lowest abundance. X-ray photoelectron spectroscopy (XPS) analysis showed that the BSFMx = 0.04 film had the lowest oxygen vacancy content, which was conducive to a decrease in leakage current density and an improvement in dielectric properties. The diffraction peak of (110) exhibited the maximum intensity when the doping amount was 4 mol%, and the minimum leakage current density and a large remanent polarization intensity were also observed at room temperature (2Pr = 91.859 μC/cm2). By doping Sm at an appropriate amount, the leakage property of the BSFM films was reduced, the dielectric property was improved, and the aging process was delayed. The performance changes in the BSFM films were further explained from different perspectives, such as phase composition and oxygen vacancy content.
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Affiliation(s)
- Yangyang Wang
- School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, China; (Y.W.); (Z.M.); (L.W.); (Y.L.); (B.Y.)
| | - Zhaoyang Li
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China;
| | - Zhibiao Ma
- School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, China; (Y.W.); (Z.M.); (L.W.); (Y.L.); (B.Y.)
| | - Lingxu Wang
- School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, China; (Y.W.); (Z.M.); (L.W.); (Y.L.); (B.Y.)
| | - Xiaodong Guo
- School of Data and Computer Science, Shandong Women’s University, Jinan 250300, China;
| | - Yan Liu
- School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, China; (Y.W.); (Z.M.); (L.W.); (Y.L.); (B.Y.)
| | - Bingdong Yao
- School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, China; (Y.W.); (Z.M.); (L.W.); (Y.L.); (B.Y.)
| | - Fengqing Zhang
- School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, China; (Y.W.); (Z.M.); (L.W.); (Y.L.); (B.Y.)
- Correspondence: (F.Z.); (L.Z.)
| | - Luyi Zhu
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China;
- Correspondence: (F.Z.); (L.Z.)
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Li T, Wang M, Liu X, Jin M, Huang F. Hydrogen Impurities in ZnO: Shallow Donors in ZnO Semiconductors and Active Sites for Hydrogenation of Carbon Species. J Phys Chem Lett 2020; 11:2402-2407. [PMID: 32130015 DOI: 10.1021/acs.jpclett.0c00509] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
ZnO, as a low-cost yet significant semiconductor, has been widely used in solar energy conversion and optoelectronic devices. In addition, Cu/ZnO-based catalysts can convert syngas (H2, CO, and CO2) into methanol. However, the main concern about the intrinsic connection between the physical and chemical properties and the structure of ZnO still remains. In this work, efforts are made to decipher the physical and chemical information encoded into the structure. Through using NMR-IR techniques, we, for the first time, report a new ZnO model with three H+ cations incorporated into one Zn vacancy. 1H magic-angle spinning NMR and IR spectra demonstrate that Ga3+ cations are introduced into the Zn vacancies of the ZnO lattice, which replace the H+ cation, and thus further confirm the feasibility of our proposed model. The exchange between the H+ cation in Zn vacancies and the D2 gas phase shows that ZnO can activate H2 because of the quantized three H+ cations in the defect site.
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Affiliation(s)
- Titao Li
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China
| | - Mengye Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China
| | - Xiaolong Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China
| | - Mingge Jin
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China
| | - Feng Huang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China
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Unzueta I, de R-Lorente DA, Cesari E, Sánchez-Alarcos V, Recarte V, Pérez-Landazábal JI, García JA, Plazaola F. Experimental Observation of Vacancy-assisted Martensitic Transformation Shift in Ni-Fe-Ga Alloys. PHYSICAL REVIEW LETTERS 2019; 122:165701. [PMID: 31075017 DOI: 10.1103/physrevlett.122.165701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2018] [Indexed: 06/09/2023]
Abstract
Positron annihilation lifetime spectroscopy is used to experimentally demonstrate the direct relationship between vacancies and the shift of the martensitic transformation temperature in a Ni_{55}Fe_{17}Ga_{28} alloy. The evolution of vacancies assisting the ordering enables shifts of the martensitic transformation up to 50 K. Our results confirm the role that both vacancy concentration and different vacancy dynamics play in samples quenched from the L2_{1} and B2 phases, which dictate the martensitic transformation temperature and its subsequent evolution. Finally, by electron-positron density functional calculations V_{Ni} is identified as the most probable vacancy present in Ni_{55}Fe_{17}Ga_{28}. This work evidences the capability of vacancies for the fine-tuning of the martensitic transformation temperature, paving the way for defect engineering of multifunctional properties.
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Affiliation(s)
- I Unzueta
- Department of Electricity and Electronics, University of the Basque Country UPV/EHU, 48940 Leioa, Spain
- BCMaterials, University of Basque Country UPV/EHU, 48940 Leioa, Spain
| | - D Alonso de R-Lorente
- Department of Science, Universidad Pública de Navarra, Campus de Arrosadía, 31006 Pamplona, Spain
| | - E Cesari
- Department of Physics, Universitat de les Illes Balears, Ctra. de Valldemossa, km 7.5, E-07122, Palma de Mallorca, Spain
| | - V Sánchez-Alarcos
- Department of Science, Universidad Pública de Navarra, Campus de Arrosadía, 31006 Pamplona, Spain
- Institute for Advanced Materials (INAMAT), Universidad Pública de Navarra, Campus de Arrosadía, 31006 Pamplona, Spain
| | - V Recarte
- Department of Science, Universidad Pública de Navarra, Campus de Arrosadía, 31006 Pamplona, Spain
- Institute for Advanced Materials (INAMAT), Universidad Pública de Navarra, Campus de Arrosadía, 31006 Pamplona, Spain
| | - J I Pérez-Landazábal
- Department of Science, Universidad Pública de Navarra, Campus de Arrosadía, 31006 Pamplona, Spain
- Institute for Advanced Materials (INAMAT), Universidad Pública de Navarra, Campus de Arrosadía, 31006 Pamplona, Spain
| | - J A García
- BCMaterials, University of Basque Country UPV/EHU, 48940 Leioa, Spain
- Department of Applied Physics II, University of the Basque Country UPV/EHU, 48940 Leioa, Spain
| | - F Plazaola
- Department of Electricity and Electronics, University of the Basque Country UPV/EHU, 48940 Leioa, Spain
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Ul R, Levassort F, Lematre M, Tran-Huu-Hue LP, Pham-Thi M. Internal Electric Field in Co-Doped BaTiO 3 With Co 2+/3+, Nb 5+, Li +, and F -: Impact on Functional Properties and Charge Compensation With Niobium and Fluorine Ions. IEEE TRANSACTIONS ON ULTRASONICS, FERROELECTRICS, AND FREQUENCY CONTROL 2019; 66:154-162. [PMID: 30371362 DOI: 10.1109/tuffc.2018.2878365] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Dense barium titanate (BaTiO3) ceramics ( [Formula: see text]) with a microscale grain size are obtained at 800 °C-1100 °C by a solid-state ceramic process. BaTiO3 (BT) doped with Co2+/3+ leads to a significant improvement in the properties ( pC/N). Soft and hard characteristics of the piezoceramics are observed depending on the dopant ions. The Co/Li acceptor dopants lead to hard piezoceramics and aging phenomena. Aged BT:Co, Li exhibits double loops and a distorted hysteresis cycle for nonpoled and poled ceramics, respectively. Ceramics poled by the increasing field process at room temperature and the field cooling process present different poled and aged states, which are dependent on the thermal history and poling process. The distorted hysteresis loops for BT:Co, Li indicate an increased internal bias field with aging time. Insertion of donor dopants, such as Nb5+ ions, significantly reduces the internal field. These behaviors are related to the presence of defect dipoles ( [Formula: see text]"- [Formula: see text] due to the insertion of acceptor dopants in the B-sites following the oxygen vacancies to equilibrate charge compensation. BT:Co sintered with LiF leads to a quasi-symmetric hysteresis loop, indicating that F- may insert into an oxygen site and counteract the formation of oxygen vacancies. Dielectric drift of BT:Co, Li shows resilience to an ac electric field, which is related to the increased internal field. BT doped with 0.75 mol% Co2+/3+ and 1 mol% Li2CO3 presents hard piezoelectric behavior with a Rayleigh coefficient α = 2.53 10-7 m/V and the capability to handle high electrical stress of up to 400 [Formula: see text]/mm.
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8
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Morozov MI. On the piezoelectric efficiency of rotator and extender ferroelectrics in random polycrystalline aggregates with various engineered domain states. CrystEngComm 2018. [DOI: 10.1039/c8ce00535d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Phase transition between polar polymorphs may result in piezoelectric enhancement.
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Affiliation(s)
- Maxim I. Morozov
- Laboratory of Solution Chemistry of Advanced Materials and Technologies
- ITMO University
- St. Petersburg
- Russian Federation
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9
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Chapman JBJ, Cohen RE, Kimmel AV, Duffy DM. Improving the Functional Control of Aged Ferroelectrics Using Insights from Atomistic Modeling. PHYSICAL REVIEW LETTERS 2017; 119:177602. [PMID: 29219448 DOI: 10.1103/physrevlett.119.177602] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/08/2017] [Indexed: 06/07/2023]
Abstract
We provide a fundamental insight into the microscopic mechanisms of the aging processes. Using large-scale molecular dynamics simulations of the prototypical ferroelectric material PbTiO_{3}, we demonstrate that the experimentally observed aging phenomena can be reproduced from intrinsic interactions of defect dipoles related to dopant-vacancy associates, even in the absence of extrinsic effects. We show that variation of the dopant concentration modifies the material's hysteretic response. We identify a universal method to reduce loss and tune the electromechanical properties of inexpensive ceramics for efficient technologies.
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Affiliation(s)
- J B J Chapman
- Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT, United Kingdom
- National Physical Laboratory, Hampton Road, Teddington TW11 0LW, United Kingdom
| | - R E Cohen
- Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT, United Kingdom
- Extreme Materials Initiative, Geophysical Laboratory, Carnegie Institution of Washington, Washington, D.C. 20015, USA
- Ludwig Maximilians University Munich, 80539 München, Germany
| | - A V Kimmel
- Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT, United Kingdom
| | - D M Duffy
- Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT, United Kingdom
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10
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Kosogor A, Xue D, Zhou Y, Ding X, Otsuka K, L'vov VA, Sun J, Ren X. Impact of the volume change on the ageing effects in Cu-Al-Ni martensite: experiment and theory. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2013; 25:335402. [PMID: 23880779 DOI: 10.1088/0953-8984/25/33/335402] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
The time evolution of the physical properties of martensite during martensite ageing is traditionally explained by the symmetry-conforming short-range order (SC-SRO) principle, which requires the spatial configuration of crystal defects to follow the symmetry change of the host lattice. In the present study, we show that the volume change of the host lattice also contributes to the ageing effects in Cu-Al-Ni shape memory alloy besides the symmetry change. To substantiate this statement the gradual increase of the storage modulus with time at constant temperature was measured by dynamic mechanical analysis (DMA) and the experimental results were quantitatively described in the framework of the symmetry-conforming Landau theory of martensitic transformations in a crystal with defects. The comparison of experimental and theoretical results confirmed that the time dependence of the storage modulus is caused by two different physical mechanisms. Evaluations showing that the first mechanism is driven by the spontaneous symmetry change and the second mechanism is caused by the volume change after the martensitic transformation was carried out.
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Affiliation(s)
- Anna Kosogor
- Institute of Magnetism, 36-b Vernadsky Blvd, Kyiv 03142, Ukraine.
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12
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Müller L, Waldorf M, Gutt C, Grübel G, Madsen A, Finlayson TR, Klemradt U. Slow aging dynamics and avalanches in a gold-cadmium alloy investigated by x-ray photon correlation spectroscopy. PHYSICAL REVIEW LETTERS 2011; 107:105701. [PMID: 21981514 DOI: 10.1103/physrevlett.107.105701] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2010] [Revised: 07/04/2011] [Indexed: 05/31/2023]
Abstract
Results of a x-ray photon correlation spectroscopy experiment on the very weakly first order martensitic transformation of a Au50.5Cd49.5 single crystal are presented. Slow non-equilibrium-dynamics are observed in a narrow temperature interval in the direct vicinity of the otherwise athermal phase transformation. These dynamics are associated with the martensite-aging effect. The dynamical aging is accompanied by an avalanchelike behavior which is identified with an incubation-time phenomenon.
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Affiliation(s)
- L Müller
- II. Physikalisches Institut, RWTH Aachen University, D-52056 Aachen, Germany
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13
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Xue D, Gao J, Bao H, Zhou Y, Zhang L, Ren X. In situ observation of thermally activated domain memory and polarization memory in an aged K⁺-doped (Ba, Sr)TiO₃ single crystal. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2011; 23:275902. [PMID: 21690658 DOI: 10.1088/0953-8984/23/27/275902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
Different ferroelectric domains are degenerate states of the same ferroelectric phase; thus they are energetically equivalent and, in principle there exists no preference for a particular domain pattern. However, the existence of point defects is considered to stabilize certain preferential domain states. In order to study the temperature violation on such stabilized domains, we performed in situ observation on an aged K⁺-doped (Ba, Sr)TiO₃ single crystal and found that both the domain configuration and polarization state can be memorized after experiencing a thermally activated ferro-para-ferro transition cycle, as manifested by a reappearance of the same domain pattern and double P-E hysteresis loop. In contrast, after the sample was aged in the paraelectric state (>10 min), these memory effects disappeared. The above memory effects are considered to originate from the interaction between point defects and the crystal symmetry driven by a symmetry-conforming tendency of point defects. Such a mechanism suggests that the memory effects are relevant to the existence of acceptor dopant and associated mobile oxygen vacancies, and they are not restricted to a particular dopant. Thus similar memory effects are expected to exist in a wide range of ferroelectric materials with acceptor doping.
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Affiliation(s)
- Dezhen Xue
- Multi-disciplinary Materials Research Center, Frontier Institute of Science and Technology, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China.
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Abstract
The Landau theory has been developed for the description of martensite aging. The characteristic features of the theory are: i) the multicomponent non-scalar character of the order parameter describing the slow reconfiguration of lattice defects after martensitic transformation (MT); ii) the complete agreement with Symmetry-Conforming Short-Range-Order principle formulated by X. Ren and K. Otsuka; iii) the applicability to the different MT-s and various defects related to aging phenomena. The physical values interpreted as the components of internal stress, which stabilizes certain variant of martensitic phase, have been composed of the components of slow non-scalar order parameter. An applicability of the developed theory to the description of influence of aging on the MT temperature and yield stress was demonstrated.
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Anwar S, Lalla N. Electron microscopic studies of the antiferroelectric phase in Sr0.60Ca0.40TiO3 ceramic. J SOLID STATE CHEM 2008. [DOI: 10.1016/j.jssc.2008.02.004] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/22/2022]
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Wang Y, Ren X, Otsuka K. Shape memory effect and superelasticity in a strain glass alloy. PHYSICAL REVIEW LETTERS 2006; 97:225703. [PMID: 17155814 DOI: 10.1103/physrevlett.97.225703] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2006] [Indexed: 05/12/2023]
Abstract
The shape memory effect and superelasticity are usually found in alloys exhibiting spontaneous martensitic transformation. Thus it is hard to imagine that such interesting effects can appear in a system without a martensitic transformation. In this Letter we show shape memory and the superelasticity effect in a nonmartensitic Ti48.5Ni51.5 alloy, which has no martensitic transformation but undergoes a "strain glass" transition. In situ x-ray diffraction experiment showed that the shape memory and superelasticity in strain glass stem from a stress-induced strain glass to martensite transformation and its reverse transformation. The new shape memory and superelasticity in strain glass extends the regime of the shape memory effect and superelasticity and may lead to novel applications.
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Affiliation(s)
- Yu Wang
- National Insititute for Material Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Ren X. Large electric-field-induced strain in ferroelectric crystals by point-defect-mediated reversible domain switching. NATURE MATERIALS 2004; 3:91-94. [PMID: 14716304 DOI: 10.1038/nmat1051] [Citation(s) in RCA: 171] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2003] [Accepted: 11/28/2003] [Indexed: 05/24/2023]
Abstract
Ferroelectric crystals are characterized by their asymmetric or polar structures. In an electric field, ions undergo asymmetric displacement and result in a small change in crystal dimension, which is proportional to the applied field. Such electric-field-induced strain (or piezoelectricity) has found extensive applications in actuators and sensors. However, the effect is generally very small and thus limits its usefulness. Here I show that with a different mechanism, an aged BaTiO(3) single crystal can generate a large recoverable nonlinear strain of 0.75% at a low field of 200 V mm(-1). At the same field this value is about 40 times higher than piezoelectric Pb(Zr, Ti)O(3) (PZT) ceramics and more than 10 times higher than the high-strain Pb(Zn(1/3)Nb(2/3))O(3)-PbTiO(3) (PZN-PT) single crystals. This large electro-strain stems from an unusual reversible domain switching (most importantly the switching of non-180 degrees domains) in which the restoring force is provided by a general symmetry-conforming property of point defects. This mechanism provides a general method to achieve large electro-strain effect in a wide range of ferroelectric systems and the effect may lead to novel applications in ultra-large stroke and nonlinear actuators.
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Affiliation(s)
- Xiaobing Ren
- Materials Physics Group, National Institute for Materials Science, Tsukuba, 305-0047, Ibaraki, Japan.
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