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Laukkanen P, Punkkinen M, Kuzmin M, Kokko K, Liu X, Radfar B, Vähänissi V, Savin H, Tukiainen A, Hakkarainen T, Viheriälä J, Guina M. Bridging the gap between surface physics and photonics. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2024; 87:044501. [PMID: 38373354 DOI: 10.1088/1361-6633/ad2ac9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Accepted: 02/19/2024] [Indexed: 02/21/2024]
Abstract
Use and performance criteria of photonic devices increase in various application areas such as information and communication, lighting, and photovoltaics. In many current and future photonic devices, surfaces of a semiconductor crystal are a weak part causing significant photo-electric losses and malfunctions in applications. These surface challenges, many of which arise from material defects at semiconductor surfaces, include signal attenuation in waveguides, light absorption in light emitting diodes, non-radiative recombination of carriers in solar cells, leakage (dark) current of photodiodes, and light reflection at solar cell interfaces for instance. To reduce harmful surface effects, the optical and electrical passivation of devices has been developed for several decades, especially with the methods of semiconductor technology. Because atomic scale control and knowledge of surface-related phenomena have become relevant to increase the performance of different devices, it might be useful to enhance the bridging of surface physics to photonics. Toward that target, we review some evolving research subjects with open questions and possible solutions, which hopefully provide example connecting points between photonic device passivation and surface physics. One question is related to the properties of the wet chemically cleaned semiconductor surfaces which are typically utilized in device manufacturing processes, but which appear to be different from crystalline surfaces studied in ultrahigh vacuum by physicists. In devices, a defective semiconductor surface often lies at an embedded interface formed by a thin metal or insulator film grown on the semiconductor crystal, which makes the measurements of its atomic and electronic structures difficult. To understand these interface properties, it is essential to combine quantum mechanical simulation methods. This review also covers metal-semiconductor interfaces which are included in most photonic devices to transmit electric carriers to the semiconductor structure. Low-resistive and passivated contacts with an ultrathin tunneling barrier are an emergent solution to control electrical losses in photonic devices.
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Affiliation(s)
- Pekka Laukkanen
- Department of Physics and Astronomy, University of Turku, Turku, Finland
| | - Marko Punkkinen
- Department of Physics and Astronomy, University of Turku, Turku, Finland
| | - Mikhail Kuzmin
- Department of Physics and Astronomy, University of Turku, Turku, Finland
| | - Kalevi Kokko
- Department of Physics and Astronomy, University of Turku, Turku, Finland
| | - Xiaolong Liu
- Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Behrad Radfar
- Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Ville Vähänissi
- Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Hele Savin
- Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Antti Tukiainen
- Optoelectronics Research Centre, Tampere University, Tampere, Finland
| | - Teemu Hakkarainen
- Optoelectronics Research Centre, Tampere University, Tampere, Finland
| | - Jukka Viheriälä
- Optoelectronics Research Centre, Tampere University, Tampere, Finland
| | - Mircea Guina
- Optoelectronics Research Centre, Tampere University, Tampere, Finland
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Pierucci D, Silly M, Tissot H, Hollander P, Sirotti F, Rochet F. Surface Photovoltage dynamics at passivated silicon surfaces: influence of substrate doping and surface termination. Faraday Discuss 2022; 236:442-460. [DOI: 10.1039/d1fd00107h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We have monitored the temporal evolution of the band bending at controlled silicon surfaces after a fs laser pump excitation. Time-resolved surface photo-voltage (SPV) experiments were performed using time resolved...
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Zhou S, Pi X, Ni Z, Ding Y, Jiang Y, Jin C, Delerue C, Yang D, Nozaki T. Comparative study on the localized surface plasmon resonance of boron- and phosphorus-doped silicon nanocrystals. ACS NANO 2015; 9:378-386. [PMID: 25551330 DOI: 10.1021/nn505416r] [Citation(s) in RCA: 26] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Localized surface plasmon resonance (LSPR) of doped Si nanocrystals (NCs) is critical to the development of Si-based plasmonics. We now experimentally show that LSPR can be obtained from both B- and P-doped Si NCs in the mid-infrared region. Both experiments and calculations demonstrate that the Drude model can be used to describe the LSPR of Si NCs if the dielectric screening and carrier effective mass of Si NCs are considered. When the doping levels of B and P are similar, the LSPR energy of B-doped Si NCs is higher than that of P-doped Si NCs because B is more efficiently activated to produce free carriers than P in Si NCs. We find that the plasmonic coupling between Si NCs is effectively blocked by oxide at the NC surface. The LSPR quality factors of B- and P-doped Si NCs approach those of traditional noble metal NCs. We demonstrate that LSPR is an effective means to gain physical insights on the electronic properties of doped Si NCs. The current work on the model semiconductor NCs, i.e., Si NCs has important implication for the physical understanding and practical use of semiconductor NC plasmonics.
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Affiliation(s)
- Shu Zhou
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China
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Paleari S, Baldovino S, Molle A, Fanciulli M. Evidence of trigonal dangling bonds at the Ge(111)/oxide interface by electrically detected magnetic resonance. PHYSICAL REVIEW LETTERS 2013; 110:206101. [PMID: 25167431 DOI: 10.1103/physrevlett.110.206101] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/21/2013] [Revised: 03/28/2013] [Indexed: 06/03/2023]
Abstract
Despite a renewed interest in Ge as a competitor with Si for a broad range of electronic applications, the microstructure and the electronic properties of the dangling bonds that, in analogy with Si, are expected at the Ge/oxide interface have escaped a firm spectroscopy observation and characterization. Clear evidence based on contactless electrically detected magnetic resonance spectroscopy of a dangling bond at the Ge(111)/GeO(2) interface is reported in this Letter. This result supports the similarity between dangling bonds at the Si(111)/oxide and Ge(111)/oxide interfaces, both showing C(3v) trigonal point symmetry with the main axis oriented along the ⟨111⟩ direction. In contrast, at the Ge(001)/oxide interface the absence of the trigonal center in favor of a lower symmetry dangling bond marks the difference with the Si(001)/oxide interface, where both centers are present and the one having higher point symmetry prevails. This fact is rationalized in terms of suboxide interface rearrangement and oxide viscoelasticity, which promote the generation of the nonaxial centers at distorted dimers. The unambiguous identification of the centers at the Ge/oxide interfaces yields a deeper insight into the physical properties of the suboxide interface structure and offers a valid indicator for the evaluation of different surface capping and passivation techniques, with the potential to boost the Ge-related technology.
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Affiliation(s)
- S Paleari
- Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan, Italy
| | - S Baldovino
- Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza (MB), Italy
| | - A Molle
- Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza (MB), Italy
| | - M Fanciulli
- Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan, Italy and Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza (MB), Italy
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Hong SH, Kim YS, Lee W, Kim YH, Song JY, Jang JS, Park JH, Choi SH, Kim KJ. Active doping of B in silicon nanostructures and development of a Si quantum dot solar cell. NANOTECHNOLOGY 2011; 22:425203. [PMID: 21941033 DOI: 10.1088/0957-4484/22/42/425203] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Active doping of B was observed in nanometer silicon layers confined in SiO(2) layers by secondary ion mass spectrometry (SIMS) depth profiling analysis and confirmed by Hall effect measurements. The uniformly distributed boron atoms in the B-doped silicon layers of [SiO(2) (8 nm)/B-doped Si(10 nm)](5) films turned out to be segregated into the Si/SiO(2) interfaces and the Si bulk, forming a distinct bimodal distribution by annealing at high temperature. B atoms in the Si layers were found to preferentially substitute inactive three-fold Si atoms in the grain boundaries and then substitute the four-fold Si atoms to achieve electrically active doping. As a result, active doping of B is initiated at high doping concentrations above 1.1 × 10(20) atoms cm( - 3) and high active doping of 3 × 10(20) atoms cm( - 3) could be achieved. The active doping in ultra-thin Si layers was implemented for silicon quantum dots (QDs) to realize a Si QD solar cell. A high energy-conversion efficiency of 13.4% was realized from a p-type Si QD solar cell with B concentration of 4 × 10(20) atoms cm( - 3).
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Affiliation(s)
- Seung Hui Hong
- Korea Research Institute of Standards and Science (KRISS), Yuseong, 305-340 Daejeon, Korea
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Hoehne F, Lu J, Stegner AR, Stutzmann M, Brandt MS, Rohrmüller M, Schmidt WG, Gerstmann U. Electrically detected electron-spin-echo envelope modulation: a highly sensitive technique for resolving complex interface structures. PHYSICAL REVIEW LETTERS 2011; 106:196101. [PMID: 21668174 DOI: 10.1103/physrevlett.106.196101] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2011] [Indexed: 05/10/2023]
Abstract
We show that the electrical detection of electron-spin-echo envelope modulation (ESEEM) is a highly sensitive tool to study interfaces. Taking the Si/SiO2 interface defects in phosphorus-doped crystalline silicon as an example, we find that the main features of the observed echo modulation pattern allow us to develop a microscopic model for the dangling-bond-like P(b0) center by comparison with the results of ab initio calculations. The ESEEM spectrum is found to be far more sensitive to the defect characteristics than the spectrally resolved hyperfine splitting itself.
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Affiliation(s)
- Felix Hoehne
- Walter Schottky Institut, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany.
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Mélin T, Zdrojek M, Brunel D. Electrostatic Force Microscopy and Kelvin Force Microscopy as a Probe of the Electrostatic and Electronic Properties of Carbon Nanotubes. SCANNING PROBE MICROSCOPY IN NANOSCIENCE AND NANOTECHNOLOGY 2010. [DOI: 10.1007/978-3-642-03535-7_4] [Citation(s) in RCA: 18] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/11/2023]
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Stesmans A, Somers P, Afanas'ev VV. Electron spin resonance observation of an interfacial Ge P(b 1)-type defect in SiO(2)/(100)Si(1-x)Ge(x)/SiO(2)/Si heterostructures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2009; 21:122201. [PMID: 21817441 DOI: 10.1088/0953-8984/21/12/122201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Using electron spin resonance (ESR), we report on the observation of a first Ge dangling bond (DB)-type interface defect in the SiO(2)/(100)Ge(x)Si(1-x)/SiO(2)/(100)Si heterostructure manufactured by the condensation technique. The center, exhibiting monoclinic-I (C(2v)) symmetry with principal g values g(1) = 2.0338 ± 0.0003, g(2) = 2.0386 ± 0.0006, g(3) = 2.0054 is observed in maximum densities of ∼6.8 × 10(12) cm(-2) of the Ge(x)Si(1-x)/SiO(2) interface for x∼0.7, the signal disappearing for x outside the 0.45-0.93 range. The notable absence of interfering Si P(b)-type centers enables unequivocal spectral analysis. Collectively, the combination of all data leads to depicting the defect as a Ge P(b 1)-type center, i.e. not a trigonal basic Ge P(b(0))-type center ([Formula: see text]). Understanding the modalities of the defect's occurrence may provide an insight into the thus far elusive role of Ge DB defects at Ge/insulator interfaces, and widen our understanding of interfacial DB centers in general.
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Affiliation(s)
- A Stesmans
- Department of Physics and Astronomy, University of Leuven, 3001 Leuven, Belgium. INPAC-Institute for Nanoscale Physics and Chemistry, University of Leuven, 3001 Leuven, Belgium
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Stirling A, Pasquarello A. An Electronegativity-Induced Spin Repulsion Effect. J Phys Chem A 2005; 109:8385-90. [PMID: 16834231 DOI: 10.1021/jp053335h] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
We present a spin delocalization effect in radical Si-containing systems, featuring a heteroatom of high electronegativity (such as N, O, or Cl) bonded to the unsaturated Si atom. We find that the higher the electronegativity of the heteroatom, the more the localized spin shifts away from the unsaturated Si atom and the heteroatom toward saturated Si neighbors. We demonstrate that this spin repulsion toward saturated Si atoms is induced by the electronegativity difference between the Si atom and the heteroatoms. We present a simple molecular-orbital-based mechanism which fully explains the structural and electronic effects. We contrast the present spin delocalization mechanism with the classical hyperconjugation in organic chemistry. The most important consequences of this spin redistribution are the electron-spin-resonance activity of the saturated Si neighbors and the enhanced stability of the radical centers. We predict a similar effect for Ge radicals and discuss why organic systems based on carbon do not feature such spin repulsion.
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Affiliation(s)
- Andras Stirling
- Computational Science, Department of Chemistry and Applied Biosciences, ETH Zurich, USI Campus, Via Giuseppe Buffi 13, CH-6900 Lugano, Switzerland.
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Cantin JL, von Bardeleben HJ, Shishkin Y, Ke Y, Devaty RP, Choyke WJ. Identification of the carbon dangling bond center at the 4H-SiC/SiO(2) interface by an EPR study in oxidized porous SiC. PHYSICAL REVIEW LETTERS 2004; 92:015502. [PMID: 14753997 DOI: 10.1103/physrevlett.92.015502] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/24/2003] [Revised: 09/16/2003] [Indexed: 05/24/2023]
Abstract
We report the observation of a paramagnetic interface defect in thermally oxidized porous n-type doped 4H-SiC/SiO(2). Based on its axial symmetry and resolved hyperfine interactions it is attributed to an sp(3) carbon dangling bond center situated at the SiC side of the interface. This center is electrically active and pins the Fermi level in the oxidized samples. No silicon related paramagnetic dangling bond centers are observed. The formation of dangling bond centers seems to be related to interstitial oxygen diffusion at the interface during the oxidation process.
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Affiliation(s)
- J L Cantin
- Groupe de Physique des Solides, Universités Paris 6&7, UMR 7588 au CNRS, 2, place Jussieu, 75005 Paris, France
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Yamasaki T, Kato K, Uda T. Oxidation of the Si(001) surface: lateral growth and formation of P(b0) centers. PHYSICAL REVIEW LETTERS 2003; 91:146102. [PMID: 14611539 DOI: 10.1103/physrevlett.91.146102] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2003] [Indexed: 05/24/2023]
Abstract
More than 100 oxygen-adsorbed configurations with oxygen coverage of up to two monolayers (ML) were studied through first-principles calculations. It was found that oxidation proceeds almost laterally. When the coverage exceeds 1.25 ML, oxygen atoms introduced between the second and third layers are captured at a bridging site in the second layer, generating twofold-coordinated Si atoms. Emission of such twofold-coordinated Si atoms leaves weakly bonded Si pairs in the fourth layer. When such pairs happen to be generated close to each other, they transform into a chain of Si trimers with one P(b0) center at each end.
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Affiliation(s)
- Takahiro Yamasaki
- Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan.
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Rashkeev SN, Fleetwood DM, Schrimpf RD, Pantelides ST. Defect generation by hydrogen at the Si- SiO(2) interface. PHYSICAL REVIEW LETTERS 2001; 87:165506. [PMID: 11690213 DOI: 10.1103/physrevlett.87.165506] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2001] [Indexed: 05/23/2023]
Abstract
Hydrogen is known to passivate Si dangling bonds at the Si-SiO(2) interface, but the subsequent arrival of H(+) at the interface causes depassivation of Si-H bonds. Here we report first-principles density functional calculations, showing that, contrary to conventional assumptions, depassivation is not a two-step process, namely, neutralization of H(+) by a Si electron and subsequent formation of an H(2) molecule. Instead, we establish that H(+) is the only stable charge state at the interface and that H(+) reacts directly with Si-H, forming an H(2) molecule and a positively charged dangling bond (P(b) center). As a result, H-induced interface-trap formation does not depend on the availability of Si electrons.
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Affiliation(s)
- S N Rashkeev
- Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA
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Hetényi B, De Angelis F, Giannozzi P, Car R. Reconstruction of frozen-core all-electron orbitals from pseudo-orbitals. J Chem Phys 2001. [DOI: 10.1063/1.1398097] [Citation(s) in RCA: 28] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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