GaAs(001) surface under conditions of low As pressure: evidence for a novel surface geometry

Bridging the gap between surface physics and photonics

Use and performance criteria of photonic devices increase in various application areas such as information and communication, lighting, and photovoltaics. In many current and future photonic devices, surfaces of a semiconductor crystal are a weak part causing significant photo-electric losses and malfunctions in applications. These surface challenges, many of which arise from material defects at semiconductor surfaces, include signal attenuation in waveguides, light absorption in light emitting diodes, non-radiative recombination of carriers in solar cells, leakage (dark) current of photodiodes, and light reflection at solar cell interfaces for instance. To reduce harmful surface effects, the optical and electrical passivation of devices has been developed for several decades, especially with the methods of semiconductor technology. Because atomic scale control and knowledge of surface-related phenomena have become relevant to increase the performance of different devices, it might be useful to enhance the bridging of surface physics to photonics. Toward that target, we review some evolving research subjects with open questions and possible solutions, which hopefully provide example connecting points between photonic device passivation and surface physics. One question is related to the properties of the wet chemically cleaned semiconductor surfaces which are typically utilized in device manufacturing processes, but which appear to be different from crystalline surfaces studied in ultrahigh vacuum by physicists. In devices, a defective semiconductor surface often lies at an embedded interface formed by a thin metal or insulator film grown on the semiconductor crystal, which makes the measurements of its atomic and electronic structures difficult. To understand these interface properties, it is essential to combine quantum mechanical simulation methods. This review also covers metal-semiconductor interfaces which are included in most photonic devices to transmit electric carriers to the semiconductor structure. Low-resistive and passivated contacts with an ultrathin tunneling barrier are an emergent solution to control electrical losses in photonic devices.

Controlling the growth of multiple ordered heteromolecular phases by utilizing intermolecular repulsion

Metal/organic interfaces and their structural, electronic, spintronic and thermodynamic properties have been investigated intensively, aiming to improve and develop future electronic devices. In this context, heteromolecular phases add new design opportunities simply by combining different molecules. However, controlling the desired phases in such complex systems is a challenging task. Here, we report an effective way of steering the growth of a bimolecular system composed of adsorbate species with opposite intermolecular interactions-repulsive and attractive, respectively. The repulsive species forms a two-dimensional lattice gas, the density of which controls which crystalline phases are stable. Critical gas phase densities determine the constant-area phase diagram that describes our experimental observations, including eutectic regions with three coexisting phases. We anticipate the general validity of this type of phase diagram for binary systems containing two-dimensional gas phases, and also show that the density of the gas phase allows engineering of the interface structure.

Electrophilic surface sites as precondition for the chemisorption of pyrrole on GaAs(001) surfaces

We report how the presence of electrophilic surface sites influences the adsorption mechanism of pyrrole on GaAs(001) surfaces. For this purpose, we have investigated the adsorption behavior of pyrrole on different GaAs(001) reconstructions with different stoichiometries and thus different surface chemistries. The interfaces were characterized by x-ray photoelectron spectroscopy, scanning tunneling microscopy, and by reflectance anisotropy spectroscopy in a spectral range between 1.5 and 5 eV. On the As-rich c(4 × 4) reconstruction that exhibits only nucleophilic surface sites, pyrrole was found to physisorb on the surface without any significant modification of the structural and electronic properties of the surface. On the Ga-rich GaAs(001)-(4 × 2)/(6 × 6) reconstructions which exhibit nucleophilic as well as electrophilic surface sites, pyrrole was found to form stable covalent bonds mainly to the electrophilic (charge deficient) Ga atoms of the surface. These results clearly demonstrate that the existence of electrophilic surface sites is a crucial precondition for the chemisorption of pyrrole on GaAs(001) surfaces.

Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach

We review the surface stability and growth kinetics of III-V and III-nitride semiconductors. The theoretical approach used in these studies is based on ab initio calculations and includes gas-phase free energy. With this method, we can investigate the influence of growth conditions, such as partial pressure and temperature, on the surface stability and growth kinetics. First, we examine the feasibility of this approach by comparing calculated surface phase diagrams of GaAs(001) with experimental results. In addition, the Ga diffusion length on GaAs(001) during molecular beam epitaxy is discussed. Next, this approach is systematically applied to the reconstruction, adsorption and incorporation on various nitride semiconductor surfaces. The calculated results for nitride semiconductor surface reconstructions with polar, nonpolar, and semipolar orientations suggest that adlayer reconstructions generally appear on the polar and the semipolar surfaces. However, the stable ideal surface without adsorption is found on the nonpolar surfaces because the ideal surface satisfies the electron counting rule. Finally, the stability of hydrogen and the incorporation mechanisms of Mg and C during metalorganic vapor phase epitaxy are discussed.

Structure of InSb(001) surface

The InSb(001) surface has been studied experimentally, using room temperature scanning tunnelling microscopy (RT STM), and theoretically, using ab initio density functional theory (DFT) calculations. RT experimental STM images show bright lines running along the bulk crystal [110] direction. Resolved features between the bright lines whose appearance depends on the applied bias voltage confirm clearly the c(8×2) reconstruction of this surface. Our calculations, which are reported for this surface for the first time, include the reconstructed 4×2 and c(8×2) surfaces, the latter according to the so-called ζ-model proposed previously by Lee et al and Kumpf et al. A 'defective' structure proposed previously by Kumpf et al, which contains an extra In atom within a top bilayer is also considered. In all cases, we obtained stable structures. Calculated STM images for the c(8×2) reconstruction obtained using the Tersoff-Hamann approximation compare extremely well with the experimental ones. We also find that the defect structure may not be clearly visible in the STM images. Finally, a brief discussion is given on the other, although closely related, phase of the same surface observed previously in low temperature (LT) experimental STM images (Goryl et al 2007 Surf. Sci. 601 3605).

Internal architecture and adsorption sites of Violet Lander molecules assembled on native and KBr-passivated InSb(001) surfaces

The adsorption of individual Violet Lander molecules self-assembled on the c(8x2) reconstructed InSb(001) surface in its native form and on the surface passivated with one to three monolayers of KBr is investigated by means of low-temperature scanning tunneling microscopy (STM). Preferred adsorption sites of the molecules are found on flat terraces as well as at atomic step edges. For molecules immobilized on flat terraces, several different conformations are identified from STM images acquired with submolecular resolution and are explained by the rotation of the 3,5-di-tert-butylphenyl groups around sigma bonds, which allows adjustment of the molecular geometry to the anisotropic substrate structure. Formation of ordered molecular chains is found at steps running along substrate reconstruction rows, whereas at the steps oriented perpendicularly no intermolecular ordering is recorded. It is also shown that the molecules deposited at two or more monolayers of the epitaxial KBr spacer do not have any stable adsorption sites recorded with STM. Prospects for the manipulation of single molecules by using the STM tip on highly anisotropic substrates are also explored, and demonstrate the feasibility of controlled lateral displacement in all directions.

High resolution LT-STM imaging of PTCDA molecules assembled on an InSb(001) c(8 × 2) surface

The self-assembling of 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) molecules deposited on an InSb(001) c(8 × 2) surface at sub-monolayer quantities has been investigated at low temperature (77 K) using scanning tunnelling microscopy. Sub-molecular resolution was obtained on PTCDA molecules. The results reveal that individual PTCDA molecules are arranged on the substrate in chains parallel to the [110] crystallographic direction, correlated with characteristic features of the low temperature InSb(001) c(8 × 2) surface electronic structure. A structural model for PTCDA molecules adsorbed on InSb is proposed.

Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces

First-principles phase diagrams of bismuth-stabilized GaAs- and InP(100) surfaces demonstrate for the first time the presence of anomalous (2x1) reconstructions, which disobey the common electron counting principle. Combining these theoretical results with our scanning-tunneling-microscopy and photoemission measurements, we identify novel (2x1) surface structures, which are composed of symmetric Bi-Bi and asymmetric mixed Bi-As and Bi-P dimers, and find that they are stabilized by stress relief and pseudogap formation.

Compositional correlation and anticorrelation in quaternary alloys: competition between bulk thermodynamics and surface kinetics

We analyze the atomistic mechanisms driving the compositional correlation of In and N in the quaternary Inx Ga1-xAs1-yNy alloys combining atomic scale chemical analysis in transmission electron microscopy and density-functional theory calculations. Our results show that for typical growth conditions surface kinetics prevail over bulk thermodynamics resulting in a hitherto unexpected compositional anticorrelation between In and N.

PTCDA molecules on an InSb(001) surface studied with atomic force microscopy

PTCDA (3,4,9,10-perylene-tetracarboxylic-dianhydride) molecular structures assembled on an InSb(001) c(8 × 2) reconstructed surface have been studied using frequency modulated atomic force microscopy. The high-resolution imaging of the structures is possible through repulsive interactions, using the constant height scanning mode. During initial stages of growth the [110] diffusion channel dominates as indicated by formation of long PTCDA molecular chains parallel to the [110] crystallographic direction on the InSb surface. For a single monolayer coverage a wetting layer of PTCDA is formed. Finally it is shown that the PTCDA/InSb is a promising system for building molecular nanostructures by manipulation of single molecules with the AFM tip.

Maleic anhydride adsorption on silicon (001)

The adsorption of maleic anhydride on the Si(001) surface has been investigated using the first-principles pseudopotential formalism. Our total-energy calculations suggest that maleic anhydride (C2H2-C2O3) adsorbs preferentially through a [2+2] cycloaddition of the C=C bond ([2+2]) with an adsorption energy of around 42 kcal/mol. Besides the [2+2] configuration we have also considered other possible coverages and adsorption models, including the adsorption on inter-row and intrarow dimer sites. Based on the analysis of the relative stability of different adsorption models, we propose the formation of mixed domains, containing the [2+2] unit and an interdimer unit. The comparison of our calculated electronic band structure, vibrational modes, and scanning tunneling microscopy images for the [2+2] and the favored interdimer adsorbed structures corroborate our proposed mixed domain model.

Ga-rich limit of surface reconstructions on GaAs(001): atomic structure of the (4 x 6) phase

The Ga-rich reconstruction of the GaAs(001) surface has been studied. Using scanning tunneling microscopy (STM), we have found the existence of a well-ordered (4 x 6) reconstruction under extreme Ga-rich conditions. A structure model, consisting of subsurface Ga-Ga dimers and surface Ga-As dimers, is proposed for the (4 x 6) surface. This model is found to be energetically favorable at the Ga-rich limit and agrees well with our experimental data from STM and reflection high-energy electron diffraction.

Atomic structure of InSb(001) and GaAs(001) surfaces imaged with noncontact atomic force microscopy

Noncontact atomic force microscopy (NC-AFM) has been used to study the c(8x2) InSb(001) and the c(8x2) GaAs(001) surfaces prepared by sputter cleaning and annealing. Atomically resolved tip-surface interaction maps display different characteristic patterns depending on the tip front atom type. It is shown that representative AFM maps can be interpreted consistently with the most recent structural model of A(III)B(V)(001) surface, as corresponding to the A(III) sublattice, to the B(V) sublattice, or to the combination of both sublattices.

Direct imaging of the InSb001-c8 x 2 surface: evidence for large anisotropy of the reconstruction

We have observed the InSb(001)-c(8 x 2) surface by using high-resolution transmission electron microscopy in the profile-imaging geometry. All images observed at temperatures up to 420 degrees C agree well with the c(8 x 2) model reported by Kumpf et al. [Phys. Rev. Lett. 86, 3586 (2001)]]. 1/30 sec real-time observations at 420 degrees C evidence that a part of the subsurface and surface layers (called a gull-type segment) undergo switching to and from a bulk configuration. The finding is suggestive of large anisotropy in the mean square displacement of the c(8 x 2) surface.

Surface-reconstruction-switched adsorbate photofragmentation dynamics

Energy-resolved angular distributions of neutral fragments ejected during photoinduced electron transfer reaction of CH3Br on GaAs(100) exhibit three distinct methyl-radical ejection channels. These undergo marked changes when the termination is switched from the Ga-rich c(8 x 2) to the As-rich c(2 x 8). Our observations are consistent with a strong adsorption-site dependence of the dynamics.

Subsurface dimerization in III-V semiconductor (001) surfaces

We present the atomic structure of the c(8 x 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group III atoms takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 x 2) reconstructions of III-V semiconductors can be described in a unified model.