Experimental confirmation of the predicted shallow donor hydrogen state in zinc oxide

Improved Electrical Resistivity of Atomic-Layer-Deposited Copper Thin Films on Polyimide Substrates by an In Situ ZnO Interlayer

The low-temperature atomic layer deposition of metal on polymer surfaces is often challenging owing to the deficiency of functional groups and reactivity. Here, the deposition of ALD-Cu employing Cu(hfac)2 and Et2Zn at a low temperature (120 °C) on polyimide (PI) substrates is improved by the utilization of an in situ ultrathin ALD-ZnO buffer layer. A conformal and continuous ALD-Cu thin film with low resistivity (6.07 μΩ cm) is fabricated on an ALD-ZnO/PI substrate. The findings demonstrate that the ALD-ZnO buffer layer provides chemisorption and a nucleation site for the initial growth of ALD-Cu. Transmission electron microscopy and energy-dispersive X-ray analysis reveal that the ALD-ZnO layer plays a buffer role in the fitness of ALD-Cu on PI substrates and its ability to elicit the formation of an ALD-ZnO nanocluster and polar surface. ALD-ZnO can be effectively utilized as a buffer layer for polymer-based ALD-metal processes, showing potential in flexible electronic applications.

Indium-zinc-oxide thin films produced by low-cost chemical solution deposition: Tuning the microstructure, optical and electrical properties with the processing conditions

Indium-zinc-oxide (IZO) films were prepared by spin coating an ethanol-ethylene-glycol precursor solution with a Zn/(In + Zn) ratio of 0.36 on glass. The effects of temperature on the structure, microstructure, electrical, and optical properties of the IZO thin films were investigated by thermal analysis, Fourier-transform infrared spectroscopy, X-ray diffraction, electron and atomic-force microscopy, X-ray photoelectron spectroscopy and variable-angle spectroscopic ellipsometry. The prepared IZO thin films heated at 500, 600, and 700 °C in air were transparent, without long-range ordering, and with an RMS surface roughness of less than 1 nm. The lowest electrical resistivity at room temperature, 0.0069 Ωcm, was observed for the 115-nm-thick IZO thin film heated at 600 °C in air and subsequently post-annealed in Ar/H2. The thin film exhibited a microstructure characterized by grains typically 20 nm in size and had no organic residues. This film exhibits uniaxial optical anisotropy due to its ultra-thin lamellae with a high electron density. The ordinary refractive index was fitted as a Tauc-Lorentz-Urbach function, which is typical of an indirect absorption edge occurring in amorphous semiconductor materials. The principal absorption peak with an onset at about 2.8 eV and a Tauc gap energy of ∼2.6 eV is similar to those observed for In2O3. The described process of chemical solution deposition and subsequent curing is promising for the low-cost fabrication of IZO thin films for transparent electronics, and can be used to tune the structure and microstructure of IZO thin films, as well as their electrical and optical properties.

Intrinsic Nature of Spontaneous Magnetic Fields in Superconductors with Time-Reversal Symmetry Breaking

We present a systematic investigation of muon-stopping states in superconductors that reportedly exhibit spontaneous magnetic fields below their transition temperatures due to time-reversal symmetry breaking. These materials include elemental rhenium, several intermetallic systems, and Sr_{2}RuO_{4}. We demonstrate that the presence of the muon leads to only a limited and relatively localized perturbation to the local crystal structure, while any small changes to the electronic structure occur several electron volts below the Fermi energy, leading to only minimal changes in the charge density on ions close to the muon. Our results imply that the muon-induced perturbation alone is unlikely to lead to the observed spontaneous fields in these materials, whose origin is more likely intrinsic to the time-reversal symmetry-broken superconducting state.

Heavy Hydrogen Doping into ZnO and the H/D Isotope Effect

Hydrogen (H) can drastically change the physical properties of solids by the doping of host materials with minimum perturbation to the lattice because of its small size, quantum nature, and a variety of charged states from -1 (hydride, H^-) to +1 (proton, H⁺). While the H-doping amount is limited under equilibrium conditions, H₂⁺ ion irradiation at low temperature is a promising method for introducing a large amount of hydrogen into any material. Although the application of this method offers the potential for exploring unforeseen fascinating properties, the effects of nonequilibrium H doping at very low temperature below 10 K are largely underexplored and are not well understood. In this article, we report heavy H (D) doping into ZnO films by H₂⁺ (D₂⁺) irradiation at 7 K, which resulted in metallic conductivity and an isotope effect on the conductivity at 7 K. The H/D isotope effect is attributable to metastable H (D) trapping sites generated by the effect of irradiation. The isotope effect is decreased at low acceleration voltage. Furthermore, the subsequent thermal excursion induces a large irreversible decrease in resistivity, indicating the migration of H (D) from metastable trapping sites upon heating. This work provides a new strategy to control the physical properties of materials and to investigate the H (D) migration occurring with increasing temperature after excess H doping at very low temperature.

Highly Conductive Zinc Oxide Based Transparent Conductive Oxide Films Prepared Using RF Plasma Sputtering Under Reducing Atmosphere

The spectral properties and colour functions of a radio frequency (RF)-based sputtering plasma source was monitored during consecutive sputter deposition of zinc doped indium oxide (IZO) thin films under argon and argon/hydrogen mix. The effect of target exposure to the hydrogen gas on charge density/mobility and spectral transmittance of the deposited films was investigated. We demonstrate that consecutive exposure to the hydrogen gas during the deposition process progressively affects the properties of thin films with a certain degree of continuous improvement in electrical conductivity while demonstrating that reverting to only argon from argon/ hydrogen mix follows a complex pathway, which has not been reported previously in such detail to our knowledge. We then demonstrate that this effect can be used to prepare highly conductive zinc oxide thin films without indium presence and as such eliminating the need for the expensive indium addition. We shall demonstrate that complexity observed in emission spectra can be simply identified by monitoring the colour of the plasma through its colour functions, making this technique a simple real-time monitoring method for the deposition process.

Aerosol-assisted route to low-E transparent conductive gallium-doped zinc oxide coatings from pre-organized and halogen-free precursor

Thermal control in low-emission windows is achieved by the application of glazings, which are simultaneously optically transparent in the visible and reflective in the near-infrared (IR). This phenomenon is characteristic of coatings with wide optical band gaps that have high enough charge carrier concentrations for the material to interact with electromagnetic radiation in the IR region. While conventional low-E coatings are composed of sandwiched structures of oxides and thin Ag films or of fluorinated SnO2 coatings, ZnO-based glazing offers an environmentally stable and economical alternative with competitive optoelectronic properties. In this work, gallium-doped zinc oxide (GZO) coatings with properties for low-E coatings that exceed industrial standards (T visible > 82%; R 2500 nm > 90%; λ (plasma) = 1290 nm; ρ = 4.7 × 10-4 Ω cm; R sh = 9.4 Ω·□-1) are deposited through a sustainable and environmentally friendly halogen-free deposition route from [Ga(acac)3] and a pre-organized zinc oxide precursor [EtZnOiPr]4 (1) via single-pot aerosol-assisted chemical vapor deposition. GZO films are highly (002)-textured, smooth and compact without need of epitaxial growth. The method herein describes the synthesis of coatings with opto-electronic properties commonly achievable only through high-vacuum methods, and provides an alternative to the use of pyrophoric ZnEt2 and halogenated SnO2 coatings currently used in low-emission glazing and photovoltaic technology.

Enhanced photoresponse of epitaxially grown ZnO by MoO3 surface functionalization

Enhanced photoresponse of epitaxially grown ZnO has been observed with MoO₃ surface functionalization, which is attributed to the larger upward band bending at the interface.

Realization of Spatially Addressable Library by a Novel Combinatorial Approach on Atomic Layer Deposition: A Case Study of Zinc Oxide

Though the synthesis of libraries of multicomponent metal oxide systems is prevalent using the combinatorial approach, the combinatorial approach has been rarely realized in studying simple metal oxides, especially applied to the atomic layer deposition (ALD) technique. In this literature, a novel combinatorial approach technique is utilized within an ALD grown simple metal oxide to synthesize a "spatially addressable combinatorial library". The two key factors in gradients were defined during the ALD process: (1) the process temperature and (2) a nonuniform flow of pulsed gases inside a cross-flow reactor. To validate the feasibility of our novel combinatorial approach, a case study of zinc oxide (ZnO), a simple metal oxide whose properties are well-known, is performed. Because of the induced gradient, the ZnO (002) crystallite size was found to gradually vary across a 100 mm wafer (∼10-20 nm) with a corresponding increase in the normalized Raman E₂/A₁ peak intensity ratio. The findings agree well with the visible grain size observed from scanning electron microscope. The novel combinatorial approach provides a means of systematical interpretation of the combined effect of the two gradients, especially in the analysis of the microstructure of ZnO crystals. Moreover, the combinatorial library reveals that the process temperature, rather than the crystal size, plays the most significant role in determining the electrical conductivity of ZnO.

Defect-related multicolour emissions in ZnO smoke: from violet, over green to yellow

The nature of defects in ZnO smoke was studied at different stages of the material's history by combining photoluminescence (PL) and electron paramagnetic resonance (EPR) spectroscopy. In contrast to studies previously reported on ZnO nanopowders, high vacuum conditions (P < 10-5 mbar) have been applied during sample storage, handling and spectroscopic investigations. Two pairs of violet-PL/EPR signals (2.88 eV/ g = 1.956 and 2.80 eV/ g = 1.960) were observed in the as-synthesized ZnO powder and attributed to surface (dominant) and bulk zinc interstitials (Zni+). Upon annealing in O2-poor conditions, green-PL emission (2.41 eV) and EPR signal at g = 2.002 develop along with EPR signals specific of superoxide radicals (O2-). In the absence of any external O2 supply, the oxygen necessary for the creation of a notable amount of O2- is provided by the lattice of ZnO smoke, so that the green emission and its EPR counterpart are unambiguously assigned to singly charged oxygen vacancies (VO+). Annealing at high PO2 results in a broad PL emission (∼2.07 eV) without an EPR counterpart. This yellow emission was assigned to peroxide-like surface species (O22-). Overall, this study shows that the visible emissions in ZnO smoke nanopowders can range from violet, over green to yellow as a function of sample history and that the corresponding PL/EPR fingerprints can serve as guidelines for the recognition of defects in other ZnO types.

The Role of Dopant Ions on Charge Injection and Transport in Electrochemically Doped Quantum Dot Films

Control over the charge density is very important for implementation of colloidal semiconductor nanocrystals into various optoelectronic applications. A promising approach to dope nanocrystal assemblies is charge injection by electrochemistry, in which the charge compensating electrolyte ions can be regarded as external dopant ions. To gain insight into the doping mechanism and the role of the external dopant ions, we investigate charge injection in ZnO nanocrystal assemblies for a large series of charge compensating electrolyte ions with spectroelectrochemical and electrochemical transistor measurements. We show that charge injection is limited by the diffusion of cations in the nanocrystal films as their diffusion coefficient are found to be ∼7 orders of magnitude lower than those of electrons. We further show that the rate of charge injection depends strongly on the cation size and cation concentration. Strikingly, the onset of electron injection varies up to 0.4 V, depending on the size of the electrolyte cation. For the small ions Li⁺ and Na⁺ the onset is at significantly less negative potentials. For larger ions (K⁺, quaternary ammonium ions) the onset is always at the same, more negative potential, suggesting that intercalation may take place for Li⁺ and Na⁺. Finally, we show that the nature of the charge compensating cation does not affect the source-drain electronic conductivity and mobility, indicating that shallow donor levels from intercalating ions fully hybridize with the quantum confined energy levels and that the reorganization energy due to intercalating ions does not strongly affect electron transport in these nanocrystal assemblies.

A compact low-temperature hydrogen ion beam apparatus for in situ physical property measurements

A new compact low-temperature hydrogen ion beam apparatus has been developed for in situ physical property measurements. Introduction of hydrogen can significantly alter the physical properties of materials. Conventional methods such as exposure to H₂ gas are limited to materials having hydrogen sorption. The present method is, in principle, applicable to any material of interest. Our setup provides a facile way to conduct both low-temperature hydrogen ion beam irradiation and in situ electrical resistivity measurements, which enables observation of novel physical properties induced by the low-temperature irradiation. The lowest temperature of 3.8 K was achieved by utilizing a newly designed rotatable radiation shield and a closed-cycle cryostat, which is advantageous for long-time low-temperature experiments for heavy hydrogen doping and in situ analysis. It was found that the resistivity of ZnO largely decreased by hydrogen ion beam irradiation at 50 K. Furthermore, the in situ measurements revealed an unforeseen irreversible thermal hysteresis for resistivity.

Role of Proton Diffusion in the Nonexponential Kinetics of Proton-Coupled Electron Transfer from Photoreduced ZnO Nanocrystals

Experiments have suggested that photoreduced ZnO nanocrystals transfer an electron and a proton to organic radicals through a concerted proton-coupled electron transfer (PCET) mechanism. The kinetics of this process was studied by monitoring the decay of the absorbance that reflects the concentration of electrons in the conduction bands of the nanocrystals. Interestingly, this absorbance exhibited nonexponential decay kinetics that could not be explained by heterogeneities of the nanoparticles or electron content. To determine if proton diffusion from inside the nanocrystal to reactive sites on the surface could lead to such nonexponential kinetics, herein this process is modeled using kinetic Monte Carlo simulations. These simulations provide the survival probability of a proton hopping among bulk, subsurface, and surface sites within the nanocrystal until it reaches a reactive surface site where it transfers to an organic radical. Using activation barriers predominantly obtained from periodic density functional theory, the simulations reproduce the nonexponential decay kinetics. This nonexponential behavior is found to arise from the broad distribution of lifetimes caused by different types of subsurface and surface sites. The longer lifetimes are associated with the proton becoming temporarily trapped in a subsurface site that does not have direct access to a reactive surface site due to capping ligands. These calculations suggest that movement of the protons rather than the electrons dominate the nonexponential kinetics of the PCET reaction. Thus, the impact of both bulk and surface properties of metal-oxide nanoparticles on proton conductivity should be considered when designing heterogeneous catalysts.

Study of the surface properties of ZnO nanocolumns used for thin-film solar cells

Densely packed ZnO nanocolumns (NCs), perpendicularly oriented to the fused-silica substrates were directly grown under hydrothermal conditions at 90 °C, with a growth rate of around 0.2 μm/h. The morphology of the nanostructures was visualized and analyzed by scanning electron microscopy (SEM). The surface properties of ZnO NCs and the binding state of present elements were investigated before and after different plasma treatments, typically used in plasma-enhanced CVD solar cell deposition processes, by X-ray photoelectron spectroscopy (XPS). Photothermal deflection spectroscopy (PDS) was used to investigate the optical and photoelectrical characteristics of the ZnO NCs, and the changes induced to the absorptance by the plasma treatments. A strong impact of hydrogen plasma treatment on the free-carrier and defect absorption of ZnO NCs has been directly detected in the PDS spectra. Although oxygen plasma treatment was proven to be more efficient in the surface activation of the ZnO NC, the PDS analysis showed that the plasma treatment left the optical and photoelectrical features of the ZnO NCs intact. Thus, it was proven that the selected oxygen plasma treatment can be of great benefit for the development of thin film solar cells based on ZnO NCs.

Energy-Efficient Hydrogenated Zinc Oxide Nanoflakes for High-Performance Self-Powered Ultraviolet Photodetector

Light absorption efficiency and doping induced charge carrier density play a vital role in self-powered optoelectronic devices. Unique vanadium-doped zinc oxide nanoflake array (VZnO NFs) is fabricated for self-powered ultraviolet (UV) photodetection. The light harvesting efficiency drastically improved from 84% in ZnO NRs to 98% in VZnO NFs. Moreover, the hydrogenation of as-synthesized VZnO (H:VZnO) NFs displayed an outstanding increase in response current as compared to pristine structures. The H:VZnO NFs device presents an extraordinary photoelastic behavior with faster photodetection speed in the order of ms under a low UV illumination signal. Excellent responsivity and external quantum efficiency with larger value of specific detectivity of H:VZnO NFs device promises an outstanding sensitivity for UV signal and self-powered high-performance visible-blind photodetector.

Synthesis of wheatear-like ZnO nanoarrays decorated with Ag nanoparticles and its improved SERS performance through hydrogenation

Semiconductor/noble metal composite SERS substrates have been extensively studied due to their unique bifunctionality. In this work, wheatear-like ZnO nanoarrarys have been fabricated via a modified low-temperature solution method. The hierarchical nanostructures that are constructed by stacked nanoflakes and long whiskers of ZnO possess a substantial number of characteristic nano corners and edges, which are proved to be beneficial to deposit more Ag nanoparticles (NPs). Furthermore, hydrogenated wheatear-like ZnO/AgNP composite substrates are achieved via a safe and facile solid hydrogen source (NaBH4). The hydrogenated ZnO/AgNPs (H-ZnO/Ag) substrates exhibit greatly improved SERS activity in detecting R6G molecules with an enhancement factor (EF) up to ∼0.49 × 10(8), over two orders of magnitude higher than that of the substrates before hydrogenation. The outstanding SERS performance of wheatear-like H-ZnO/Ag substrates benefits from the emerging porous structure of ZnO and abundant surface defects introduced by hydrogenation. In addition, the as-prepared substrates also show high detection sensitivity, good repeatability and recyclability, indicating great potential for practical applications.

Reaction Dynamics of Proton-Coupled Electron Transfer from Reduced ZnO Nanocrystals

The creation of systems that efficiently interconvert chemical and electrical energies will be aided by understanding proton-coupled electron transfers at solution-semiconductor interfaces. Steps in developing that understanding are described here through kinetic studies of reactions of photoreduced colloidal zinc oxide (ZnO) nanocrystals (NCs) with the nitroxyl radical TEMPO. These reactions proceed by proton-coupled electron transfer (PCET) to give the hydroxylamine TEMPOH. They occur on the submillisecond to seconds time scale, as monitored by stopped-flow optical spectroscopy. Under conditions of excess TEMPO, the reactions are multiexponential in character. One of the contributors to this multiexponential kinetics may be a distribution of reactive proton sites. A graphical overlay method shows the reaction to be first order in [TEMPO]. Different electron concentrations in otherwise identical NC samples were achieved by three different methods: differing photolysis times, premixing with an unphotolyzed sample, or prereaction with TEMPO. The reaction velocities were consistently higher for NCs with higher numbers of electrons. For instance, NCs with an average of 2.6 e(-)/NC reacted faster than otherwise identical samples containing ≤1 e(-)/NC. Surprisingly, NC samples with the same average number of electrons but prepared in different ways often had different reaction profiles. These results show that properties beyond electron content determine PCET reactivity of the particles.

Highly sensitive and selective H2 sensing by ZnO nanofibers and the underlying sensing mechanism

We report, and propose a mechanism for, the exceptional hydrogen gas (H2) sensing ability of ZnO nanofibers. In comparison to SnO2 nanofibers, ZnO nanofibers show outstanding H2 gas response and unmistakable H2 selectivity. Different from the reducing gas effect observed in SnO2 nanofibers, a semiconductor-to-metal transition that occurs in the presence of H2 gas molecules is responsible for the exceptional response and selectivity of ZnO nanofibers to H2. Notably, the presence of nanograins within nanofibers further intensifies the resistance modulation observed due to this transition.

Interfacial dominated ferromagnetism in nanograined ZnO: a μSR and DFT study

Diamagnetic oxides can, under certain conditions, become ferromagnetic at room temperature and therefore are promising candidates for future material in spintronic devices. Contrary to early predictions, doping ZnO with uniformly distributed magnetic ions is not essential to obtain ferromagnetic samples. Instead, the nanostructure seems to play the key role, as room temperature ferromagnetism was also found in nanograined, undoped ZnO. However, the origin of room temperature ferromagnetism in primarily non-magnetic oxides like ZnO is still unexplained and a controversial subject within the scientific community. Using low energy muon spin relaxation in combination with SQUID and TEM techniques, we demonstrate that the magnetic volume fraction is strongly related to the sample volume fraction occupied by grain boundaries. With molecular dynamics and density functional theory we find ferromagnetic coupled electron states in ZnO grain boundaries. Our results provide evidence and a microscopic model for room temperature ferromagnetism in oxides.

Direct spectroscopic observation of a shallow hydrogenlike donor state in insulating SrTiO3

We present a direct spectroscopic observation of a shallow hydrogenlike muonium state in SrTiO(3) which confirms the theoretical prediction that interstitial hydrogen may act as a shallow donor in this material. The formation of this muonium state is temperature dependent and appears below ∼ 70K. From the temperature dependence we estimate an activation energy of ∼ 50 meV in the bulk and ∼ 23 meV near the free surface. The field and directional dependence of the muonium precession frequencies further supports the shallow impurity state with a rare example of a fully anisotropic hyperfine tensor. From these measurements we determine the strength of the hyperfine interaction and propose that the muon occupies an interstitial site near the face of the oxygen octahedron in SrTiO(3). The observed shallow donor state provides new insight for tailoring the electronic and optical properties of SrTiO(3)-based oxide interface systems.

Noble-metal-free plasmonic photocatalyst: hydrogen doped semiconductors

The unique capacity of localized surface plasmon resonance (LSPR) offers a new opportunity to overcome the limited efficiency of semiconductor photocatalyst. Here we unravel that LSPR, which usually occurs in noble metal nanoparticles, can be realized by hydrogen doping in noble-metal-free semiconductor using TiO2 as a model photocatalyst. Moreover, its LSPR is located in infrared region, which supplements that of noble metal whose LSPR is generally in the visible region, making it possible to extend the light response of photocatalyst to infrared region. The near field enhancement is shown to be comparable with that of noble-metal nanoparticles, indicating that highly enhanced light absorption rate can be expected. The present work can provide a key guideline for the creation of highly efficient noble-metal-free plasmonic photocatalysts and have a much wider impact in infrared bioimaging and spectroscopy where infrared LSPR is essential.

First-principles study of hydrogen configurations at the core of a high-angle grain boundary in cubic yttria-stabilized zirconia

Hydrogen is a common impurity in oxides and has been studied extensively by first-principles electronic structure methods. From the calculated charge-transition levels and their position with respect to the conduction-band edge, definitive conclusions can be drawn concerning the electrical activity of hydrogen either as an isolated defect or as part of a defect complex with intrinsic defects of the host lattice. For those oxides such as yttria-stabilized zirconia, which in many cases are used in polycrystalline or nanocrystalline forms, the interaction of hydrogen with grain boundaries needs to be better understood. Using both density-functional theory in the generalized-gradient approximation and a hybrid-functional approach, the present study reports on the types of isolated hydrogen configuration that can be stabilized at the core of the Σ5(310) tilt grain boundary, an interface whose atomistic structure has been determined in good detail by Z-contrast transmission electron microscopy. Initially, the present calculations elucidated the major relaxation modes that lead to low-energy structures for this boundary. Hydrogen exhibited dual behavior by binding to oxygen ions in bond-type OH(-) configurations in its positively charged state, H(+), whereas the negative H(-) species occupied preferably interstitial positions in the available empty space of the grain-boundary core regions. The neutral paramagnetic state, H(0), detected recently in muonium-based spectroscopic studies, was found to be stable in two different configurations: a deep-donor bond-type and a higher-energy quasiatomic interstitial. These configurations are characterized in terms of the trapping character of their excess electron, the spatial localization of the spin density and the resulting hyperfine parameters.

Violet emission in ZnO nanorods treated with high-energy hydrogen plasma

Violet photoluminescence was observed in high-energy hydrogen-plasma-treated ZnO nanorods at 13 K. The photoluminescence spectrum is dominated by a strong violet emission and a shoulder attributed to excitonic emission. The violet emission shows normal thermal behavior with an average lifetime of about 1 μs at 13 K. According to the time-resolved and excitation density-dependent photoluminescence, it was found that the violet emission is determined by at least two emitting channels, which was confirmed by annealing experiments. Evidence was also given that the violet emission is related to hydrogen. We suggested that the hydrogen-related complex defects formed under high-energy hydrogen plasma treatment are responsible for this violet emission.

Magnetic resonance identification of hydrogen at a zinc vacancy in ZnO

Hydrogen (H) at a zinc vacancy (VZn) in ZnO is identified by electron paramagnetic resonance (EPR) and electron spin echo envelope modulation (ESEEM). In ZnO irradiated by 2 MeV electrons, a doublet EPR spectrum, labelled S1, is observed. The doublet structure and the accompanying weak satellites are shown to be the allowed and forbidden lines of the hyperfine structure due to the dipolar interaction between an electron spin S = 1/2 and a nuclear spin I = 1/2 of (1)H located at a VZn. The involvement of a single H atom in the S1 defect is further confirmed by the observation of the nuclear Zeeman frequency of (1)H in ESEEM experiments. We show that at a VZn, H prefers to make a short O-H bond with one O neighbour and is off the substitutional site, forming a low symmetry C1 defect. In this partly H passivated VZn, the unpaired electron localizes on the p orbital of another O neighbour of VZn, and not on the H.

Surface passivation effect on the photoluminescence of ZnO nanorods

We report an investigation of the impact of surface passivation on the optical properties of ZnO nanorods. Al2O3 coating and hydrogen plasma treatment were used to passivate the surface states. It was found that Al2O3 coating led to the suppression of the deep level emissions, while hydrogen plasma treatment completely quenched the deep level emissions. It was confirmed that the surface states of the as-grown ZnO nanorod arrays indeed contributed to the deep level emissions. Evidence was also provided that shows surface states have a greater impact on the green emission than the orange emission and may cause the negative thermal quenching behavior. Moreover, the passivation effect was confirmed by the changes of the O 1s and Zn 2p spectra.

Highly tunable electrical properties in undoped ZnO grown by plasma enhanced thermal-atomic layer deposition

Undoped ZnO thin films with highly tunable physical properties have been achieved by a new plasma enhanced thermal atomic layer deposition. This innovative yet straightforward approach has not been reported before but is demonstrated to be capable of controlling material properties in a wide range. The structural, electrical, and optical properties of the ZnO films were investigated by various characterization techniques. The growth mechanisms are discussed in terms of the chemistry of the additional O2 plasma on ZnO formation. Without extrinsic doping, the resistivity and carrier concentration of the ZnO films can be controlled up to seven and five orders of magnitude, respectively, by simply adjusting the plasma conditions. The electrical properties of the ZnO films were also found to correlate with significant changes in their optical properties. This extreme control and tunability of material properties is rarely achievable for undoped and even doped ZnO and should enhance the viability of ZnO in advanced device applications.

Investigating the Defect Structures in Transparent Conducting Oxides Using X-ray and Neutron Scattering Techniques

Transparent conducting oxide (TCO) materials are implemented into a wide variety of commercial devices because they possess a unique combination of high optical transparency and high electrical conductivity. Created during the processing of the TCOs, defects within the atomic-scale structure are responsible for their desirable optical and electrical properties. Therefore, studying the defect structure is essential to a better understanding of the behavior of transparent conductors. X-ray and neutron scattering techniques are powerful tools to investigate the atomic lattice structural defects in these materials. This review paper presents some of the current developments in the study of structural defects in n-type TCOs using x-ray diffraction (XRD), neutron diffraction, extended x-ray absorption fine structure (EXAFS), pair distribution functions (PDFs), and x-ray fluorescence (XRF).

Efficient photocatalytic hydrogen evolution over hydrogenated ZnO nanorod arrays

Hydrogenated ZnO nanorod arrays grown on FTO substrates yield a benchmark specific hydrogen production rate of 122 500 μmol h⁻¹ g⁻¹.

Multi-component transparent conducting oxides: progress in materials modelling

Transparent conducting oxides (TCOs) play an essential role in modern optoelectronic devices through their combination of electrical conductivity and optical transparency. We review recent progress in our understanding of multi-component TCOs formed from solid solutions of ZnO, In(2)O(3), Ga(2)O(3) and Al(2)O(3), with a particular emphasis on the contributions of materials modelling, primarily based on density functional theory. In particular, we highlight three major results from our work: (i) the fundamental principles governing the crystal structures of multi-component oxide structures including (In(2)O(3))(ZnO)(n) and (In(2)O(3))(m)(Ga(2)O(3))(l)(ZnO)(n); (ii) the relationship between elemental composition and optical and electrical behaviour, including valence band alignments; (iii) the high performance of amorphous oxide semiconductors. On the basis of these advances, the challenge of the rational design of novel electroceramic materials is discussed.

Conductivity in transparent oxide semiconductors

Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the role of interstitial versus substitutional species are still somewhat open questions, it is one of the leading contenders for yielding unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case for conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total conductivity in TCOs. We discuss models that attempt to explain both the bulk and surface conductivity on the basis of bulk band structure features common across the TCOs, and compare these materials to other semiconductors. Finally, we briefly consider transparency in these materials, and its interplay with conductivity. Understanding this interplay, as well as the microscopic contenders for providing the conductivity of these materials, will prove essential to the future design and control of TCO semiconductors, and their implementation into novel multifunctional devices.

Point defects in ZnO: an approach from first principles

Recent first-principles studies of point defects in ZnO are reviewed with a focus on native defects. Key properties of defects, such as formation energies, donor and acceptor levels, optical transition energies, migration energies and atomic and electronic structure, have been evaluated using various approaches including the local density approximation (LDA) and generalized gradient approximation (GGA) to DFT, LDA+U/GGA+U, hybrid Hartree-Fock density functionals, sX and GW approximation. Results significantly depend on the approximation to exchange correlation, the simulation models for defects and the post-processes to correct shortcomings of the approximation and models. The choice of a proper approach is, therefore, crucial for reliable theoretical predictions. First-principles studies have provided an insight into the energetics and atomic and electronic structures of native point defects and impurities and defect-induced properties of ZnO. Native defects that are relevant to the n-type conductivity and the non-stoichiometry toward the O-deficient side in reduced ZnO have been debated. It is suggested that the O vacancy is responsible for the non-stoichiometry because of its low formation energy under O-poor chemical potential conditions. However, the O vacancy is a very deep donor and cannot be a major source of carrier electrons. The Zn interstitial and anti-site are shallow donors, but these defects are unlikely to form at a high concentration in n-type ZnO under thermal equilibrium. Therefore, the n-type conductivity is attributed to other sources such as residual impurities including H impurities with several atomic configurations, a metastable shallow donor state of the O vacancy, and defect complexes involving the Zn interstitial. Among the native acceptor-type defects, the Zn vacancy is dominant. It is a deep acceptor and cannot produce a high concentration of holes. The O interstitial and anti-site are high in formation energy and/or are electrically inactive and, hence, are unlikely to play essential roles in electrical properties. Overall defect energetics suggests a preference for the native donor-type defects over acceptor-type defects in ZnO. The O vacancy, Zn interstitial and Zn anti-site have very low formation energies when the Fermi level is low. Therefore, these defects are expected to be sources of a strong hole compensation in p-type ZnO. For the n-type doping, the compensation of carrier electrons by the native acceptor-type defects can be mostly suppressed when O-poor chemical potential conditions, i.e. low O partial pressure conditions, are chosen during crystal growth and/or doping.

Uncovering the complex behavior of hydrogen in Cu2O

The behavior of hydrogen in p-type Cu(2)O has been reported to be quite unusual. Muon experiments have been unable to ascertain the preferential hydrogen site within the Cu(2)O lattice, and indicate that hydrogen causes an electrically active level near the middle of the band gap, whose nature, whether accepting or donating, is not known. In this Letter, we use screened hybrid-density-functional theory to study the nature of hydrogen in Cu(2)O, and identify for the first time the "quasiatomic" site adopted by hydrogen in Cu(2)O. We show that hydrogen will always act as a hole killer in p-type Cu(2)O, and is one likely cause of the low performance of Cu(2)O solar cell devices.

Identification of hydrogen molecules in ZnO

Hydrogen molecules in ZnO are identified by their local vibrational modes. In a Raman study, interstitial H2, HD, and D2 species were found to exhibit local vibrational modes at frequencies 4145, 3628, and 2985 cm-1, respectively. After thermal treatment of vapor phase grown ZnO samples in hydrogen atmosphere, most hydrogen forms shallow donors at the bond-centered site (HBC). Subsequently, HBC migrates through the crystal and forms electrically inactive H2. These results imply that the "hidden" hydrogen in ZnO [G. A. Shi et al., Appl. Phys. Lett. 85, 5601 (2004)10.1063/1.1832736] occurs in the form of interstitial H2.

Equilibrium potential of free charge carriers in a bent piezoelectric semiconductive nanowire

We have investigated the behavior of free charge carriers in a bent piezoelectric semiconductive nanowire under thermodynamic equilibrium conditions. For a laterally bent n-type ZnO nanowire, with the stretched side exhibiting positive piezoelectric potential and the compressed side negative piezoelectric potential, the conduction band electrons tend to accumulate at the positive side. The positive side is thus partially screened by free charge carriers while the negative side of the piezoelectric potential preserves as long as the donor concentration is not too high. For a typical ZnO nanowire with diameter 50 nm, length 600 nm, donor concentration N(D) = 1 x 10(17) cm(-3) under a bending force of 80 nN, the potential in the positive side is <0.05 V and is approximately -0.3 V at the negative side. The theoretical results support the mechanism proposed for a piezoelectric nanogenerator. Degeneracy in the positive side of the nanowire is significant, but the temperature dependence of the potential profile is weak for the temperature range of 100-400 K.

The donor nature of muonium in undoped, heavily n-type and p-type InAs

The charge state of muonium has been investigated in p-type doped, nominally undoped (low n-type) and heavily n-type doped InAs. The donor Mu(+) state is shown to be the dominant defect in all cases. Consequently, muonium does not simply counteract the prevailing conductivity in this material. This is consistent with the charge neutrality level lying above the conduction band minimum in InAs.

Ionization energies of shallow donor states in ZnO created by reversible formation and depletion of H interstitials

The electronic effects of H atoms at interstitial sites in ZnO have been investigated by high resolution electron energy loss spectroscopy (HREELS). A reversible doping is achieved by exposing single crystalline (0001)-oriented ZnO substrates to atomic hydrogen. At low temperatures, interstitial H atoms form shallow donor states. At sufficiently high temperatures, the electrons are excited into the conduction band. We use EELS to demonstrate the presence of plasmons resulting from this finite density of charge carriers in the conduction band. Above temperatures of 100 K, a strong, plasmon-induced broadening of the quasielastic peak in the HREELS data is observed. The analysis of the temperature dependence yields a donor level ionization energy of 25+/-5 meV.