Hole trapping at Al impurities in silica: a challenge for density functional theories

p-Type BiVO4 for Solar O2 Reduction to H2O2

Photoelectrochemical cells (PECs) can directly utilize solar energy to drive chemical reactions to produce fuels and chemicals. Oxide-based photoelectrodes in general exhibit enhanced stability against photocorrosion, which is a critical advantage for building a sustainable PEC. However, most oxide-based semiconductors are n-type, and p-type oxides that can be used as photocathodes are limited. In this study, we report the synthesis, characterization, and application of p-type BiVO4 with a monoclinic scheelite (ms) structure. ms-BiVO4 is inherently n-type, and it has been investigated only as a photoanode to date. In this study, we prepared p-type ms-BiVO4 (bandgap of 2.4 eV) via atomic doping of Ca2+ at the Bi3+ site under an O2-rich environment and examined its performance as a photocathode. We then demonstrated that the Ca-doped ms-BiVO4 photocathode can be used for solar O2 reduction to H2O2 when coupled with appropriate catalysts. Our computational investigation using hybrid density functional theory revealed that holes are stable as polarons in ms-BiVO4 and have a low self-trapping energy, that may lead to free carriers in the valence band at finite temperature. Our calculations also show that Ca is an effective shallow acceptor dopant with low formation energy and thermal ionization energy leading to p-type conductivity. Our joint experimental and computational results provide critical insights into the design of p-type ms-BiVO4, enabling its use as a polaronic oxide photocathode.

On the Structure of Oxygen Deficient Amorphous Oxide Films

Understanding defects in amorphous oxide films and heterostructures is vital to improving performance of microelectronic devices, thin-film transistors, and electrocatalysis. However, to what extent the structure and properties of point defects in amorphous solids are similar to those in the crystalline phase are still debated. The validity of this analogy and the experimental and theoretical evidence of the effects of oxygen deficiency in amorphous oxide films are critically discussed. The authors start with the meaning and significance of defect models, such as "oxygen vacancy" in crystalline oxides, and then introduce experimental and computational methods used to study intrinsic defects in amorphous oxides and discuss their limitations and challenges. To test the validity of existing defect models, ab initio molecular dynamics is used with a non-local density functional to model the structure and electronic properties of oxygen-deficient amorphous alumina. Unlike some previous studies, the formation of deep defect states in the bandgap caused by the oxygen deficiency is found. Apart from atomistic structures analogous to crystal vacancies, the formation of more stable defect states characterized by the bond formation between under-coordinated Al ions is shown. The limitations of such defect models and how they may be overcome in simulations are discussed.

Ap-type dopable ultrawide-bandgap oxide

A major shortcoming of ultrawide-bandgap (UWBG) semiconductors is unipolar doping, in which eithern-type orp-type conductivity is typically possible, but not both within the same material. For UWBG oxides, the issue is usually thep-type conductivity, which is inhibited by a strong tendency to form self-trapped holes (small polarons) in the material. Recently, rutile germanium oxide (r-GeO2), with a band gap near 4.7 eV, was identified as a material that might break this paradigm. However, the predicted acceptor ionization energies are still relatively high (∼0.4 eV), limitingp-type conductivity. To assess whether r-GeO2is an outlier due to its crystal structure, the properties of a set of rutile oxides are calculated and compared. Hybrid density functional calculations indicate that rutile TiO2and SnO2strongly trap holes at acceptor impurities, consistent with previous work. Self-trapped holes are found to be unstable in r-SiO2, a metastable polymorph that has a band gap near 8.5 eV. Group-III acceptor ionization energies are also found to be lowest among the rutile oxides and approach those of GaN. Acceptor impurities have sufficiently low formation energies to not be compensated by donors such as oxygen vacancies, at least under O-rich limit conditions. Based on the results, it appears that r-SiO2has the potential to exhibit the most efficientp-type conductivity when compared to other UWBG oxides.

Understanding oxygen evolution mechanisms by tracking charge flow at the atomic level

Current classifications of oxygen evolution catalysts are based on energy levels of the clean catalysts. It is generally asserted that a LOM-catalyst can only follow LOM chemistry in each electron transfer step and that there can be no mixing between AEM and LOM steps without an external trigger. We use ab initio theory to track the charge flow of the water-on-catalyst system and show that the position of water orbitals is pivotal in determining whether an electron transfer step is water dominated oxidation (WDO), lattice-oxygen dominated oxidation (LoDO), or metal dominated oxidation (MDO). Microscopic photo-catalytic pathways of TiO₂ (110), a material whose lattice oxygen bands lie above the metal bands, show that viable OER pathways follow either all AEM steps or mixed AEM-LOM steps. The results provide a correct description of redox chemistries at the atomic level and advance our understanding of how water-splitting catalysts produce desorbed oxygen.

Many-Body Self-Interaction and Polarons

We address the many-body self-interaction in relation to polarons in density functional theory. Our study provides (i) a unified theoretical framework encompassing many-body and one-body forms of self-interaction and (ii) an efficient semilocal scheme for charge localization. Our theoretical formulation establishes a quantitative connection between the many-body and one-body forms of self-interaction in terms of electron screening, thereby conferring superiority to the concept of many-body self-interaction. Our semilocal methodology involves the use of a weak localized potential and applies equally to electron and hole polarons. We find that polarons free from many-body self-interaction have formation energies that are robust with respect to the functional adopted.

Detection and Correction of Delocalization Errors for Electron and Hole Polarons Using Density-Corrected DFT

Modeling polaron defects is an important aspect of computational materials science, but the description of unpaired spins in density functional theory (DFT) often suffers from delocalization error. To diagnose and correct the overdelocalization of spin defects, we report an implementation of density-corrected (DC-)DFT and its analytic energy gradient. In DC-DFT, an exchange-correlation functional is evaluated using a Hartree-Fock density, thus incorporating electron correlation while avoiding self-interaction error. Results for an electron polaron in models of titania and a hole polaron in Al-doped silica demonstrate that geometry optimization with semilocal functionals drives significant structural distortion, including the elongation of several bonds, such that subsequent single-point calculations with hybrid functionals fail to afford a localized defect even in cases where geometry optimization with the hybrid functional does localize the polaron. This has significant implications for traditional workflows in computational materials science, where semilocal functionals are often used for structure relaxation. DC-DFT calculations provide a mechanism to detect situations where delocalization error is likely to affect the results.

Hidden Hemibonding in the Aqueous Hydroxyl Radical

The existence of a two-center, three-electron hemibond in the first solvation shell of ^•OH(aq) has long been a matter of debate. The hemibond manifests in ab initio molecular dynamics simulations as a small-r feature in the oxygen radial distribution function (RDF) for H₂O···^•OH, but that feature disappears when semilocal density functionals are replaced with hybrids, suggesting a self-interaction artifact. Using periodic simulations at the PBE0+D3 level, we demonstrate that the hemibond is actually still present (as evidenced by delocalization of the spin density) but is obscured by the hydrogen-bonded feature in the RDF due to a slight elongation of the hemibond. Computed electronic spectra for ^•OH(aq) are in excellent agreement with experiment and confirm that hemibond-like configurations play an outsized role in the spectroscopy due to an intense charge-transfer transition that is strongly attenuated in hydrogen-bonded configurations. Apparently, 25% exact exchange (as in PBE0) is insufficient to eliminate delocalization of unpaired spins.

Role of hemibonding in the structure and ultraviolet spectroscopy of the aqueous hydroxyl radical

The presence of a two-center, three-electron hemibond in the solvation structure of the aqueous hydroxl radical has long been debated, as its appearance can be sensitive to self-interaction error in density functional theory.

Strong Hole Trapping Due to Oxygen Dimers in BiVO4: Effect on the Water Oxidation Reaction

We present a study of hole bipolarons in BiVO₄. We show that in the presence of two holes O-O dimers are formed, leading to strong charge trapping. While the formation of bipolarons in bulk BiVO₄ requires overcoming a kinetic barrier, we find that these defects should be spontaneously formed at the surface of the material and its interface with water. Through molecular dynamics simulations, we study the effect of bipolarons on the water-splitting reaction and show that their presence may be especially beneficial in alkaline conditions.

Electron and Hole Polarons at the BiVO4-Water Interface

We determine the transition levels of electron and hole polarons at the BiVO₄-water interface through thermodynamic integration within a hybrid functional scheme, thereby accounting for the liquid nature of the water component. The electron polaron is found to be less stable at the interface than in the bulk by 0.18 eV, while for the hole polaron the binding energy increases by 0.20 eV when the charge localizes in the surface layer of BiVO₄. These results indicate that interfacial effects on the polaron binding energy and charge distribution are sizeable and cannot trivially be inferred from bulk calculations.

Mechanism of Exact Transition between Cationic and Anionic Redox Activities in Cathode Material Li2FeSiO4

The discovery of anion redox activity is promising for boosting the capacity of lithium ion battery (LIB) cathodes. However, fundamental understanding of the mechanisms that trigger the anionic redox is still lacking. Here, using hybrid density functional study combined with experimental soft X-ray absorption spectroscopy (sXAS) measurements, we unambiguously proved that Li_{(2- x)}FeSiO₄ performs sequent cationic and anionic redox activity through delithiation. Specifically, Fe²⁺ is oxidized to Fe³⁺ during the first Li ion extraction per formula unit (f.u.), while the second Li ion extraction triggered the oxygen redox exclusively. Cationic and anionic redox result in electron and hole polaron states, respectively, explaining the poor conductivity of Li_{(2- x)}FeSiO₄ noted by previous experiments. In contrast, other cathode materials in this family exhibit diversity of the redox process. Li₂MnSiO₄ shows double cationic redox (Mn²⁺-Mn⁴⁺) during the whole delithiation, while Li₂CoSiO₄ shows simultaneous cationic and anionic redox. The present finding not only provides new insights into the oxygen redox activity in polyanionic compounds for rechargeable batteries but also sheds light on the future design of high-capacity rechargeable batteries.

Intrinsic charge trapping in amorphous oxide films: status and challenges

We review the current understanding of intrinsic electron and hole trapping in insulating amorphous oxide films on semiconductor and metal substrates. The experimental and theoretical evidences are provided for the existence of intrinsic deep electron and hole trap states stemming from the disorder of amorphous metal oxide networks. We start from presenting the results for amorphous (a) HfO₂, chosen due to the availability of highest purity amorphous films, which is vital for studying their intrinsic electronic properties. Exhaustive photo-depopulation spectroscopy measurements and theoretical calculations using density functional theory shed light on the atomic nature of electronic gap states responsible for deep electron trapping observed in a-HfO₂. We review theoretical methods used for creating models of amorphous structures and electronic structure calculations of amorphous oxides and outline some of the challenges in modeling defects in amorphous materials. We then discuss theoretical models of electron polarons and bi-polarons in a-HfO₂ and demonstrate that these intrinsic states originate from low-coordinated ions and elongated metal-oxygen bonds in the amorphous oxide network. Similarly, holes can be captured at under-coordinated O sites. We then discuss electron and hole trapping in other amorphous oxides, such as a-SiO₂, a-Al₂O₃, a-TiO₂. We propose that the presence of low-coordinated ions in amorphous oxides with electron states of significant p and d character near the conduction band minimum can lead to electron trapping and that deep hole trapping should be common to all amorphous oxides. Finally, we demonstrate that bi-electron trapping in a-HfO₂ and a-SiO₂ weakens Hf(Si)-O bonds and significantly reduces barriers for forming Frenkel defects, neutral O vacancies and O^2- ions in these materials. These results should be useful for better understanding of electronic properties and structural evolution of thin amorphous films under carrier injection conditions.

Practical Density Functionals beyond the Overdelocalization-Underbinding Zero-Sum Game

Density functional theory (DFT) uses a density functional approximation (DFA) to add electron correlation to mean-field electronic structure calculations. Standard strategies (generalized gradient approximations GGAs, meta-GGAs, hybrids, etc.) for building DFAs, no matter whether based on exact constraints or empirical parametrization, all face a zero-sum game between overdelocalization (fractional charge error, FC) and underestimation of covalent bonding (fractional spin error, FS). This work presents an alternative strategy. Practical "Rung 3.5" ingredients are used to implement insights from hyper-GGA DFAs that reduce both FS and FC errors. Prototypes of this strategy qualitatively improve FS and FC error over 40 years of standard DFAs while maintaining low cost and practical evaluation of properties. Numerical results ranging from transition metal thermochemistry to absorbance peaks and excited-state geometry optimizations highlight this strategy's promise and indicate areas requiring further development.

Theoretical modeling of charge trapping in crystalline and amorphous Al2O3

The characteristics of intrinsic electron and hole trapping in crystalline and amorphous Al₂O₃ have been studied using density functional theory (DFT). Special attention was paid to enforcing the piece-wise linearity of the total energy with respect to electron number through the use of a range separated, hybrid functional PBE0-TC-LRC (Guidon et al 2009 J. Chem. Theory Comput. 5 3010) in order to accurately model the behaviour of localized states. The tuned functional is shown to reproduce the geometric and electronic structures of the perfect crystal as well as the spectroscopic characteristics of Mg_Al hole centre in corundum α-Al₂O₃. An ensemble of ten amorphous Al₂O₃ structures was generated using classical molecular dynamics and a melt and quench method and their structural characteristics compared with the experimental data. The electronic structure of amorphous systems was characterized using the inverse participation ratio method. Electrons and holes were then introduced into both crystalline and amorphous alumina structures and their properties calculated. Holes are shown to trap spontaneously in both crystalline and amorphous alumina. In the crystalline phase they localize on single O ion with the trapping energy of 0.38 eV. In amorphous phase, holes localize on two nearest neighbour oxygen sites with an average trapping energy of 1.26 eV, with hole trapping sites separated on average by about 8.0 Å. No electron trapping is observed in the material. Our results suggest that trapping of positive charge can be much more severe and stable in amorphous alumina rather than in crystalline samples.

Semiconducting transition metal oxides

Open shell transition metal oxides are usually described as Mott or charge transfer insulators, which are often viewed as being disparate from semiconductors. Based on the premise that the presence of a correlated gap and semiconductivity are not mutually exclusive, this work reviews electronic structure calculations on the binary 3d oxides, so to distill trends and design principles for semiconducting transition metal oxides. This class of materials possesses the potential for discovery, design, and development of novel functional semiconducting compounds, e.g. for energy applications. In order to place the 3d orbitals and the sp bands into an integrated picture, band structure calculations should treat both contributions on the same footing and, at the same time, account fully for electron correlation in the 3d shell. Fundamentally, this is a rather daunting task for electronic structure calculations, but quasi-particle energy calculations in GW approximation offer a viable approach for band structure predictions in these materials. Compared to conventional semiconductors, the inherent multivalent nature of transition metal cations is more likely to cause undesirable localization of electron or hole carriers. Therefore, a quantitative prediction of the carrier self-trapping energy is essential for the assessing the semiconducting properties and to determine whether the transport mechanism is a band-like large-polaron conduction or a small-polaron hopping conduction. An overview is given for the binary 3d oxides on how the hybridization between the 3d crystal field symmetries with the O-p orbitals of the ligands affects the effective masses and the likelihood of electron and hole self-trapping, identifying those situations where small masses and band-like conduction are more likely to be expected. The review concludes with an illustration of the implications of the increased electronic complexity of transition metal cations on the defect physics and doping, using as an example the diversity of possible atomic and magnetic configurations of the O vacancy in TiO(2), and the high levels of hole doping in Co(2)ZnO(4) due to a self-doping mechanism that originates from the multivalence of Co.

Simulation of surface processes

Computer simulations of surface processes can reveal unexpected insight regarding atomic-scale structure and transitions. Here, the strengths and weaknesses of some commonly used approaches are reviewed as well as promising avenues for improvements. The electronic degrees of freedom are usually described by gradient-dependent functionals within Kohn-Sham density functional theory. Although this level of theory has been remarkably successful in numerous studies, several important problems require a more accurate theoretical description. It is important to develop new tools to make it possible to study, for example, localized defect states and band gaps in large and complex systems. Preliminary results presented here show that orbital density-dependent functionals provide a promising avenue, but they require the development of new numerical methods and substantial changes to codes designed for Kohn-Sham density functional theory. The nuclear degrees of freedom can, in most cases, be described by the classical equations of motion; however, they still pose a significant challenge, because the time scale of interesting transitions, which typically involve substantial free energy barriers, is much longer than the time scale of vibrations--often 10 orders of magnitude. Therefore, simulation of diffusion, structural annealing, and chemical reactions cannot be achieved with direct simulation of the classical dynamics. Alternative approaches are needed. One such approach is transition state theory as implemented in the adaptive kinetic Monte Carlo algorithm, which, thus far, has relied on the harmonic approximation but could be extended and made applicable to systems with rougher energy landscape and transitions through quantum mechanical tunneling.

Ionic charge reduction and atomic partial charges from first-principles calculations of 1,3-dimethylimidazolium chloride

We present a detailed calculation of partial charges for the 1,3-dimethylimidazolium chloride ionic liquid. We first analyze MP2 electronic structure calculations and DFT results on isolated ion pairs with various methods of assigning partial charges to the atomic centers. In a second run we analyze the trajectory of a 25 ps long Car-Parrinello MD run of 30 ion pairs under bulk conditions using a charge fitting procedure due to Blöchl. Both, the single ion pair and the bulk system, provide us with a similar total ionic charge considerably less than unity. Especially the liquid state DFT results give convincing evidence for a reduced ionic charge on the ions. The similarity of both results suggest that the delocalization of the Cl charge is due only to local interactions. The relevance of our results is 2-fold; on the one hand they shed light on the basic property of the liquid and its reduced ionic character, and on the other hand, the ab initio derived partial charges provide a fundamental theoretical basis for the recent attempts to use the total ionic charge as an adjustable parameter. Furthermore, all our partial charges are subject to large fluctuations, hinting to the importance of polarization effects.

One-electron oxidation of individual DNA bases and DNA base stacks

In calculations performed with DFT there is a tendency of the purine cation to be delocalized over several bases in the stack. Attempts have been made to see if methods other than DFT can be used to calculate localized cations in stacks of purines, and to relate the calculated hyperfine couplings with known experimental results. To calculate reliable hyperfine couplings it is necessary to have an adequate description of spin polarization which means that electron correlation must be treated properly. UMP2 theory has been shown to be unreliable in estimating spin densities due to overestimates of the doubles correction. Therefore attempts have been made to use quadratic configuration interaction (UQCISD) methods to treat electron correlation. Calculations on the individual DNA bases are presented to show that with UQCISD methods it is possible to calculate hyperfine couplings in good agreement with the experimental results. However these UQCISD calculations are far more time-consuming than DFT calculations. Calculations are then extended to two stacked guanine bases. Preliminary calculations with UMP2 or UQCISD theory on two stacked guanines lead to a cation localized on a single guanine base.

Modeling doped and defective oxides in catalysis with density functional theory methods: room for improvements

Due to the well-known problem of the self-interaction, standard density functional theory (DFT) methods tend to produce delocalized holes and electrons in defective oxide materials even when there is ample experimental evidence of a strong localization. For late transition metal compounds or rare earth oxides, this results in the incorrect description of the electronic structure of the system (e.g., magnetic insulators are predicted to be metallic). Practical ways to correct this deficiency are based on the use of hybrid functionals or of the DFT+U approach. In this way, most of the limitations related to the self-interaction are removed, and the electronic structure is properly described. What is less clear is to what extent hybrid functionals, DFT+U approaches, or standard DFT functionals can properly describe the strength of the chemical bonds at the surface of an oxide. This is a crucial question if one is interested in the catalytic properties of oxide surfaces. Oxidation reactions often involve oxygen detachment from the surface and incorporation into an organic substrate. Oxides are doped with heteroatoms to create defects and facilitate oxygen removal from the surface, with formation of oxygen vacancies. Do standard DFT calculations provide a good binding energy of the missing oxygen despite the failure in giving the right electronic structure? Can hybrid functionals or the DFT+U approach provide a simple yet reliable way to get accurate reaction enthalpies and energy barriers? In this essay, we discuss these problems by analyzing some case histories and the relatively scarce data existing in the literature. The conclusion is that while modern electronic structure methods accurately reproduce and predict a wide range of electronic, optical, and magnetic properties of oxides, the description of the strength of chemical bonds still needs considerable improvements.

Symmetry breaking and quantum correlations in finite systems: studies of quantum dots and ultracold Bose gases and related nuclear and chemical methods

Investigations of emergent symmetry breaking phenomena occurring in small finite-size systems are reviewed, with a focus on the strongly correlated regime of electrons in two-dimensional semiconductor quantum dots and trapped ultracold bosonic atoms in harmonic traps. Throughout the review we emphasize universal aspects and similarities of symmetry breaking found in these systems, as well as in more traditional fields like nuclear physics and quantum chemistry, which are characterized by very different interparticle forces. A unified description of strongly correlated phenomena in finite systems of repelling particles (whether fermions or bosons) is presented through the development of a two-step method of symmetry breaking at the unrestricted Hartree-Fock level and of subsequent symmetry restoration via post Hartree-Fock projection techniques. Quantitative and qualitative aspects of the two-step method are treated and validated by exact diagonalization calculations.Strongly-correlated phenomena emerging from symmetry breaking include the following.Chemical bonding, dissociation and entanglement (at zero and finite magnetic fields) in quantum dot molecules and in pinned electron molecular dimers formed within a single anisotropic quantum dot, with potential technological applications to solid-state quantum-computing devices.Electron crystallization, with particle localization on the vertices of concentric polygonal rings, and formation of rotating electron molecules (REMs) in circular quantum dots. Such electron molecules exhibit ro-vibrational excitation spectra, in analogy with natural molecules.At high magnetic fields, the REMs are described by parameter-free analytic wave functions, which are an alternative to the Laughlin and composite-fermion approaches, offering a new point of view of the fractional quantum Hall regime in quantum dots (with possible implications for the thermodynamic limit).Crystalline phases of strongly repelling bosons. In rotating traps and in analogy with the REMs, such repelling bosons form rotating boson molecules (RBMs). For a small number of bosons, the RBMs are energetically favored compared with the Gross-Pitaevskii solutions describing vortex formation.We discuss the present status concerning experimental signatures of such strongly correlated states, in view of the promising outlook created by the latest experimental improvements that are achieving unprecedented control over the range and strength of interparticle interactions.

Excess Electron in Water at Different Thermodynamic Conditions†

A hydrated electron in water at different densities and temperatures is studied via a set of density functional based molecular dynamics simulations, showing that a localization of an excess electron is still present even at very low densities. Space variations of the molecular dipole moments are analyzed, proposing a simple algorithm to identify the region of localization of the wavefunction relative to the solvated electron in terms of orientation of the H2O molecular dipole moments. Finally, the effects of the self-interaction corrections on the optical absorption spectra are analyzed and compared with both available experimental data and path integral molecular dynamics calculations, showing that a weighted subtraction of the self-interaction yields a systematic improvement in the position of the absorption peak.

Inside Powders: A Theoretical Model of Interfaces between MgO Nanocrystallites

The electron- and hole-trapping and optical properties of a wide variety of interfaces between MgO nanocrystallites are investigated for the first time using a quantum-mechanical embedded-cluster method and time-dependent density functional theory. We conclude that delocalized holes can be transiently trapped at a large number of places within a powder. However, it is more energetically favorable for holes to trap on low-coordinated anions on the nanocrystallite surface, forming O- species. Electrons are trapped at few interfaces but are readily trapped by surface kink and corner sites. Contrary to common perception, our calculations of optical absorption spectra indicate that a variety of features buried within a powder can be exited with photon energies less than 5 eV, usually used to selectively excite low-coordinated surface sites.

From Insulator to Electride: A Theoretical Model of Nanoporous Oxide 12CaO·7Al2O3

Recently, a novel inorganic electride stable at room temperatures has been obtained by reducing a complex nanoporous oxide 12CaO.7Al2O3 (C12A7) in a Ca atmosphere (Matsuishi, S.; Toda, Y.; Miyakawa, M.; Hayashi, K.; Kamiya, T.; Hirano, M.; Tanaka, I.; Hosono, H. Science 2003, 301, 626). In this system, up to 2.3 x 1021/cm3 electrons can be accommodated in a three-dimensional network of cages formed by a positively charged oxide framework. We demonstrate theoretically that at all concentrations, ne, the electrons are neither associated with specific atoms nor fully delocalized. At low ne, the electrons are isolated from each other and resemble the color centers in insulating materials. They are well localized in some of the lattice cages and yield strong inhomogeneous lattice distortions that provide polaron-type cage-to-cage electron hopping. As ne increases, the electrons form a denser electron gas and become more evenly spread over all available lattice cages. At sufficiently high ne, the system becomes metallic but still retains partially localized character of the conducting electrons. We describe the nature of the electronic states at the Fermi level and predict the changes in the optical and magnetic properties of this system as a function of ne.

Charge Localization in Stacked Radical Cation DNA Base Pairs and the Benzene Dimer Studied by Self-Interaction Corrected Density-Functional Theory

The incomplete cancellation of the electron self-interaction can be a serious shortcoming of density-functional theory especially when treating odd-electron systems. In this work, several popular and potentially viable correction schemes are applied in order to characterize the electronic structure of stacked molecular pairs, consisting of a neutral molecule and adjacent radical cation, as a function of separation distance. The unphysical sharing of the positive charge between adjacent molecules separated by 6-7 A is corrected for by applying a new empirical scheme proposed by VandeVondele and Sprik [Phys. Chem. Chem. Phys. 2005, 7, 1363] with a unique choice of parameters. This method is subsequently applied to characterize the electronic structure of two neighboring guanines excised from a canonical Arnott B-DNA structure and will be used in future investigations of certain model DNA fibers.

Electron hole formation in acidic zeolite catalysts

The formation of an electron hole on an AlO(4)H center of the H-ZSM-5 zeolite has been studied by a hybrid quantum mechanics/shell-model ion-pair potential approach. The Becke-3-Lee-Yang-Parr (B3LYP) and Becke-Half&Half-Lee-Yang-Parr (BHLYP) hybrid density functionals yield electron holes of different nature, a delocalized hole for B3LYP and a hole localized on one oxygen atom for BHLYP. Comparison with coupled cluster calculations including single and double substitutions and with perturbative treatment of triple substitutions CCSD(T) and with experimental data for similar systems indicate that the localized description obtained with BHLYP is more accurate. Generation of the electron hole produces a substantial geometry relaxation, in particular an elongation of the Al-O distance to the oxygen atom with the unpaired electron. The zeolite framework stabilizes the positive charge by long-range effects. Our best estimates for the vertical and adiabatic ionization energies are 9.6-10.1 and 8.4-8.9 eV, respectively. Calculations for silicalite, the all-silica form of ZSM-5, also yield a localized electron hole, but the energy cost of the process is larger by 0.6-0.7 eV. The deprotonation energy of H-ZSM-5 is found to decrease from 12.86 to 11.40 eV upon electron hole formation.

Hole localization in Al doped silica: A DFT+U description

Despite density functional theory (DFT) being the most widely used ab initio approach for studying the properties of oxide materials, the modeling of localized hole states in doped or defective oxides can be a challenge. The electronic hole formed when silica is doped with aluminum is such a defect, for which a DFT description of the atomic and electronic structures has previously been found to be inconsistent with experiment, while Hartree-Fock provides a consistent description. We have applied the DFT + U approach to this problem and find that the structural distortions around the dopant are consistent with experimental data as well as earlier cluster calculations using Hartree-Fock and perturbation theory. A hole state is found 1.1 eV (1.6 eV experimentally) above the top of the valence band with localization of spin on the oxygen atom which shows the elongated Al-O distance. A formation energy of 5.7 eV is found. We discuss implications for using DFT+U to model defective oxide systems with O 2p holes.

Chemisorption of HCl to the MgO(001) surface: A DFT study

We use plane wave and embedded cluster ab initio density functional calculations to study adsorption, dissociation and diffusion of the HCl molecule on the MgO(001) surface. The two methods yield comparable results for adsorption of an isolated HCl molecule and complement each other when considering charged species and coverage effects. We find dissociative chemisorption at a coverage smaller than 0.5 monolayer with a Cl(-) ion electrostatically coupled to the OH(-) ion at the surface oxygen site. The adsorption energy of the Cl(-)[dot dot dot](OH)(-) complex is 1.5 eV and the activation energy of Cl(-) diffusion away from OH(-) is 0.6 eV. There is no significant activation energy for rotation of Cl(-) around the adsorption site. At rising coverage, an increase in dipole-dipole repulsion between HCl molecules leads to a lowering of the adsorption energy per HCl and a change of binding towards hydrogen-bridge type as well as a lowering of the activation energy for Cl(-) diffusion. OH(-) formed in the surface due to HCl adsorption has a stretch frequency of 3,083 cm(-1) with Cl(-) associated and 3,648 cm(-1) with Cl(-) removed.

An Electronegativity-Induced Spin Repulsion Effect

We present a spin delocalization effect in radical Si-containing systems, featuring a heteroatom of high electronegativity (such as N, O, or Cl) bonded to the unsaturated Si atom. We find that the higher the electronegativity of the heteroatom, the more the localized spin shifts away from the unsaturated Si atom and the heteroatom toward saturated Si neighbors. We demonstrate that this spin repulsion toward saturated Si atoms is induced by the electronegativity difference between the Si atom and the heteroatoms. We present a simple molecular-orbital-based mechanism which fully explains the structural and electronic effects. We contrast the present spin delocalization mechanism with the classical hyperconjugation in organic chemistry. The most important consequences of this spin redistribution are the electron-spin-resonance activity of the saturated Si neighbors and the enhanced stability of the radical centers. We predict a similar effect for Ge radicals and discuss why organic systems based on carbon do not feature such spin repulsion.

Charge localization in DNA fibers

We study by first-principles molecular dynamics the mechanism of electron hole (positive charge) localization in a laboratory realizable radical cation Z DNA crystal. We find that at room temperature structural deformation does not provide an efficient localization mechanism. Instead, we find evidence for the importance of changes in the protonation state for stabilizing the radical defect.

Hole localization in [AlO4]0 defects in silica materials

First-principles calculations based on cluster models have been performed to investigate the ground state and the optically excited states of the [AlO(4)](0) hole in alpha-quartz and in the siliceous zeolite ZSM-5. The structure and spectroscopic properties of this defect have been studied using the recently developed Becke88-Becke95 one-parameter model for kinetics (BB1K) functional of Zhao et al., [J. Phys. Chem. A 108, 2715 (2004)]. Our results show that the BB1K method is significantly more reliable and more accurate than the standard density-functional theory (DFT) functionals at reproducing the localized spin density on one oxygen atom and the hyperfine coupling constants associated with the hole. Furthermore, we find that the BB1K results are in close agreement with experiments, and with the self-interaction-free unrestricted Hartree-Fock (UHF) and unrestricted second-order Møller-Plesset perturbation theory (UMP2) calculations. For the first time, we present results of the ground-state paramagnetic properties of the Al defect in ZSM-5. Similar to the theoretical work for defective alpha-quartz, we find that the BB1K, UHF, UHFLee-Yang-Parr, and UMP2 calculations show a localized hole on one oxygen neighboring the Al, while even the best to date thermochemically derived hybrid generalized gradient approximation density-functional, B97-2, predicts a different model where the hole is distributed over two oxygen. We have further considered the optical transitions of the [AlO(4)](0) center in alpha-quartz and ZSM-5. In both systems, our BB1K time-dependent density-functional theory (TDDFT) and configuration interaction singles (CIS) calculations predict that the most likely transition involves electron transfer from the hole-bearing oxygen to other neighboring oxygen ions. This reinforces the experimental conclusions obtained for defective alpha-quartz. Notably, the two lowest, most dominant excitation energies calculated by BB1K-TDDFT (1.99 and 3.03 eV) show excellent agreement with experiment (1.96 and 2.85 eV [B. K. Meyer, J.M. Spaeth, and J.A. Weil, J. Phys. C: Solid State Phys. 17, L31 (1987)]) clearly outperforming the CIS method and other DFT calculations available in the literature.