Scaling of the magnetoconductivity of silicon MOSFETs: evidence for a quantum phase transition in two dimensions

Interstitial-Induced Ferromagnetism in a Two-Dimensional Wigner Crystal

The two-dimensional Wigner crystal (WC) occurs in the strongly interacting regime (r_{s}≫1) of the two-dimensional electron gas (2DEG). The magnetism of a pure WC is determined by tunneling processes that induce multispin ring-exchange interactions, resulting in fully polarized ferromagnetism for large enough r_{s}. Recently, Hossain et al. [Proc. Natl. Acad. Sci. U.S.A. 117, 32244 (2020)PNASA60027-842410.1073/pnas.2018248117] reported the occurrence of a fully polarized ferromagnetic insulator at r_{s}≳35 in an AlAs quantum well, but at temperatures orders of magnitude larger than the predicted exchange energies for the pure WC. Here, we analyze the large r_{s} dynamics of an interstitial defect in the WC, and show that it produces local ferromagnetism with much higher energy scales. Three hopping processes are dominant, which favor a large, fully polarized ferromagnetic polaron. Based on the above results, we speculate concerning the phenomenology of the magnetism near the metal-insulator transition of the 2DEG.

Observation of spontaneous ferromagnetism in a two-dimensional electron system

What are the ground states of an interacting, low-density electron system? In the absence of disorder, it has long been expected that as the electron density is lowered, the exchange energy gained by aligning the electron spins should exceed the enhancement in the kinetic (Fermi) energy, leading to a (Bloch) ferromagnetic transition. At even lower densities, another transition to a (Wigner) solid, an ordered array of electrons, should occur. Experimental access to these regimes, however, has been limited because of the absence of a material platform that supports an electron system with very high quality (low disorder) and low density simultaneously. Here we explore the ground states of interacting electrons in an exceptionally clean, two-dimensional electron system confined to a modulation-doped AlAs quantum well. The large electron effective mass in this system allows us to reach very large values of the interaction parameter [Formula: see text], defined as the ratio of the Coulomb to Fermi energies. As we lower the electron density via gate bias, we find a sequence of phases, qualitatively consistent with the above scenario: a paramagnetic phase at large densities, a spontaneous transition to a ferromagnetic state when [Formula: see text] surpasses 35, and then a phase with strongly nonlinear current-voltage characteristics, suggestive of a pinned Wigner solid, when [Formula: see text] exceeds [Formula: see text] However, our sample makes a transition to an insulating state at [Formula: see text], preceding the onset of the spontaneous ferromagnetism, implying that besides interaction, the role of disorder must also be taken into account in understanding the different phases of a realistic dilute electron system.

Interaction-Induced Metallicity in a Two-Dimensional Disordered Non-Fermi Liquid

The interplay of interactions and disorder in two-dimensional (2D) electron systems has actively been studied for decades. The paradigmatic approach involves starting with a clean Fermi liquid and perturbing the system with both disorder and interactions. Instead, we start with a clean non-Fermi liquid near a 2D ferromagnetic quantum critical point and consider the effects of disorder. In contrast with the disordered Fermi liquid, we find that our model does not suffer from runaway flows to strong coupling and the system has a marginally stable fixed point with perfect conduction.

Spin-droplet state of an interacting 2D electron system

We report thermodynamic magnetization measurements of two-dimensional electrons in several high-mobility Si metal-oxide-semiconductor field-effect transistors. We provide evidence for an easily polarizable electron state in a wide density range from insulating to deep into the metallic phase. The temperature and magnetic field dependence of the magnetization is consistent with the formation of large-spin droplets in the insulating phase. These droplets melt in the metallic phase with increasing density and temperature, though they survive up to large densities.

Colossal magnetoresistance in an ultraclean weakly interacting 2D Fermi liquid

We report the observation of a new phenomenon of colossal magnetoresistance in a 40 nm wide GaAs quantum well in the presence of an external magnetic field applied parallel to the high-mobility 2D electron layer. In a strong magnetic field, the magnetoresistance is observed to increase by a factor of ∼300 from 0 to 45 T without the system undergoing any metal-insulator transition. We discuss how this colossal magnetoresistance effect cannot be attributed to the spin degree of freedom or localization physics, but most likely emanates from strong magneto-orbital coupling between the two-dimensional electron gas and the magnetic field. Our observation is consistent with a field-induced 2D-to-3D transition in the confined electronic system.

Large positive magnetoresistance of insulating organic crystals in the non-ohmic region

We report a large positive magnetoresistance ratio in insulating organic crystals theta-(ET)(2)CsZn(SCN)(4) at low temperatures at which they exhibit highly nonlinear current-voltage characteristics. Despite the nonlinearity, the magnetoresistance ratio is independent of the applied voltage. The magnetoresistance ratio depends little on the magnetic field direction and is described by a simple universal function of mu(B)B/k(B)T, where mu(B) is the Bohr magneton. The positive magnetoresistance may be caused by magnetic-field-induced parallel alignment of spins of mobile and localized electrons, and a resulting blockade of electrical conduction due to the Pauli exclusion principle.

Nonlinear 2D spin susceptibility in a finite magnetic field: spin-polarization dependence

By theoretically calculating the interacting spin susceptibility of a two-dimensional electron system in the presence of finite spin polarization, we show that the extensively employed technique of measuring the 2D spin susceptibility by linear extrapolation to a zero field from the finite-field experimental data is theoretically unjustified due to the strong nonlinear magnetic field dependence of the interacting susceptibility. Our work compellingly establishes that much of the prevailing interpretation of the 2D susceptibility measurements is incorrect, and, in general, the 2D interacting susceptibility cannot be extracted from the critical magnetic field for full spin polarization, as is routinely done experimentally.

Spin polarization dependence of carrier effective mass in semiconductor structures: spintronic effective mass

We introduce the concept of a spintronic effective mass for spin-polarized carriers in semiconductor structures, which arises from the strong spin-polarization dependence of the renormalized effective mass in an interacting spin-polarized electron system. The majority-spin many-body effective mass renormalization differs by more than a factor of 2 at r(s) = 5 between the unpolarized and the fully polarized two-dimensional system, whereas the polarization dependence (approximately 15%) is more modest in three dimensions around metallic densities (r(s) approximately 5). The spin-polarization dependence of the carrier effective mass is of significance in various spintronic applications.

Spin polarization dependence of the coulomb drag at large r(s)

We find that the temperature dependence of the drag resistivity between two dilute two-dimensional hole systems exhibits an unusual dependence upon spin polarization. Our main observation is that near the apparent metal-insulator transition, the temperature dependence of the drag, given by Talpha, weakens significantly with the application of a parallel magnetic field (B(||)), with alpha saturating at half its zero field value for B(||)>B(*), where B(*) is the polarization field.

Spin susceptibility of two-dimensional electrons in narrow AlAs quantum wells

We report measurements of the spin susceptibility in dilute two-dimensional electrons confined to a 45 A wide AlAs quantum well. The electrons in this well occupy an out-of-plane conduction-band valley, rendering a system similar to two-dimensional electrons in Si-MOSFETs but with only one valley occupied. We observe an enhancement of the spin susceptibility over the band value that increases as the density is decreased, following closely the prediction of quantum Monte Carlo calculations and continuing at finite values through the metal-insulator transition.

Superfluid-insulator transition in commensurate disordered bosonic systems: large-scale worm algorithm simulations

We report results of large-scale Monte Carlo simulations of superfluid-insulator transitions in disordered commensurate 2D bosonic systems. In the off-diagonal disorder case, we find that the transition is to a gapless incompressible insulator, and its dynamical critical exponent is z=1.5(2). In the diagonal-disorder case, we prove the conjecture that rare statistical fluctuations are inseparable from critical fluctuations on the largest scales and ultimately result in crossover to the generic universality class (apparently with z=2). However, even at strong disorder, the universal behavior sets in only at very large space-time distances. This explains why previous studies of smaller clusters mimicked a direct superfluid-Mott-insulator transition.

Coherent backscattering near the two-dimensional metal-insulator transition

We have studied corrections to conductivity due to the coherent backscattering in low-disordered two-dimensional electron systems in silicon for a range of electron densities including the vicinity of the metal-insulator transition, where the dramatic increase of the spin susceptibility has been observed earlier. We show that the corrections, which exist deeper in the metallic phase, weaken upon approaching the transition and practically vanish at the critical density, thus suggesting that the localization is suppressed near and at the transition even in zero field.

Spin-independent origin of the strongly enhanced effective mass in a dilute 2D electron system

We accurately measure the effective mass in a dilute two-dimensional electron system in silicon by analyzing the temperature dependence of the Shubnikov-de Haas oscillations in the low-temperature limit. A sharp increase of the effective mass with decreasing electron density is observed. We find that the enhanced effective mass is independent of the degree of spin polarization, which points to a spin-independent origin of the mass enhancement and is in contradiction with existing theories.

Spin susceptibility of an ultra-low-density two-dimensional electron system

We determine the spin susceptibility in a two-dimensional electron system in GaAs/AlGaAs over a wide range of low densities from 2x10(9) cm(-2) to 4x10(10) cm(-2). Our data can be fitted to an equation that describes the density dependence as well as the polarization dependence of the spin susceptibility. It can account for the anomalous g factors reported recently in GaAs electron and hole systems. The paramagnetic spin susceptibility increases with decreasing density as expected from theoretical calculations.

Weak-localization-like temperature-dependent conductivity of a dilute two-dimensional hole gas in a parallel magnetic field

We have studied the magnetotransport properties of a high mobility two-dimensional hole gas (2DHG) in a 10 nm GaAs quantum well with densities in the range of (0.7-1.6) x 10(10) cm(-2) on the metallic side of the zero-field "metal-insulator transition." In a parallel field well above B(c) that suppresses the metallic conductivity, the 2DHG exhibits a conductivity Delta(g)(T) approximately (1/pi) (e(2)/h)lnT reminiscent of weak localization for Fermi liquids. The experiments are consistent with the coexistence of two phases in our system: a metallic phase and a weakly insulating Fermi liquid phase.

Correlation energy and spin polarization in the 2D electron gas

The ground-state energy of the two-dimensional uniform electron gas has been calculated with a fixed-node diffusion Monte Carlo method, including backflow correlations, for a wide range of electron densities as a function of spin polarization. We give a simple analytic representation of the correlation energy which fits our simulation data and includes several known high- and low-density limits. This parametrization provides a reliable local spin density energy functional for two-dimensional systems and an estimate for the spin susceptibility. Within the proposed model for the correlation energy, a weakly first-order polarization transition occurs shortly before Wigner crystallization as the density is lowered.

Low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers

We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities n approximately (1-50)x10(11) cm(-2), which includes the vicinity of the apparent metal-insulator transition in two dimensions (2D MIT). Using a novel technique of measuring the SdH oscillations in superimposed and independently controlled parallel and perpendicular magnetic fields, we determined the spin susceptibility chi(*), the effective mass m(*), and the g(*) factor for mobile electrons. These quantities increase gradually with decreasing density; near the 2D MIT, we observed enhancement of chi(*) by a factor of approximately 4.7.

Effects of a parallel magnetic field on the metal-insulator transition in a dilute two-dimensional electron system

The temperature dependence of conductivity sigma(T) of a two-dimensional electron system in silicon has been studied in parallel magnetic fields B. At B = 0, the system displays a metal-insulator transition at a critical electron density n(c)(0), and dsigma/dT>0 in the metallic phase. At low fields ( B < or approximately equal to 2 T), n(c) increases as n(c)(B)-n(c)(0) proportional, variant Bbeta ( beta approximately 1), and the zero-temperature conductivity scales as sigma(n(s),B,T = 0)/sigma(n(s),0,0) = f(B(beta)/delta(n)), where delta(n) = [n(s)-n(c)(0)]/n(c)(0) and n(s) is electron density, as expected for a quantum phase transition. The metallic phase persists in fields of up to 18 T, consistent with the saturation of n(c) at high fields.

Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high-mobility (100) Si-inversion layers

We report studies of the magnetoresistance (MR) in a two-dimensional electron system in (100) Si-inversion layers, for perpendicular and parallel orientations of the current with respect to the magnetic field in the 2D plane. The magnetoresistance is almost isotropic; this result does not support the suggestion of its orbital origin. In the hopping regime, however, the MR contains a weak anisotropic component that is nonmonotonic in the magnetic field. We found that the field, at which the MR saturates, varies for different samples by a factor of 2 at a given carrier density. Therefore, the saturation of the MR cannot be identified with the complete spin polarization of free carriers.

Spin polarization and g factor of a dilute GaAs two-dimensional electron system

The effective g factor (g(*)) of a dilute interacting two-dimensional electron system is expected to increase with respect to its bare value as the density is lowered, and to eventually diverge as the system makes a transition to a ferromagnetic state. We report here measurements of g(*) in dilute (density 0.8 to 6.5x10(10) cm(-2)), high-mobility GaAs two-dimensional electrons from their spin polarization in a parallel magnetic field. The data reveal a surprising trend. While g(*) is indeed significantly enhanced with respect to the band g factor of GaAs, the enhancement factor decreases from about 6 to 3 as the density is reduced.