Two-dimensional metal in a parallel magnetic field

Connecting the reentrant insulating phase and the zero-field metal-insulator transition in a 2D hole system

We present the transport and capacitance measurements of 10 nm wide GaAs quantum wells with hole densities around the critical point of the 2D metal-insulator transition (critical density p(c) down to 0.8 × 10(10)/cm2, r(s) ∼ 36). For metallic hole density p(c) < p < p(c) + 0.15 × 10(10)/cm2, a reentrant insulating phase (RIP) is observed between the ν = 1 quantum Hall state and the zero-field metallic state and it is attributed to the formation of pinned Wigner crystal. Through studying the evolution of the RIP versus 2D hole density, we show that the RIP is incompressible and continuously connected to the zero-field insulator, suggesting a similar origin for these two phases.

Quantum-classical crossover and apparent metal-insulator transition in a weakly interacting 2D Fermi liquid

We report the observation of an apparent parallel magnetic-field-induced metal-insulator transition in a high-mobility two-dimensional electron gas for which spin and localization physics most likely play no major role. The high-mobility metallic phase at low field is consistent with the established Fermi liquid transport theory including phonon scattering, whereas the phase at higher field shows a large insulatinglike negative temperature dependence at resistances much smaller than the quantum of resistance h/e(2). We argue that this observation is a direct manifestation of a quantum-classical crossover arising predominantly from the magneto-orbital coupling between the finite width of the two-dimensional electron gas and the in-plane magnetic field.

Colossal magnetoresistance in an ultraclean weakly interacting 2D Fermi liquid

We report the observation of a new phenomenon of colossal magnetoresistance in a 40 nm wide GaAs quantum well in the presence of an external magnetic field applied parallel to the high-mobility 2D electron layer. In a strong magnetic field, the magnetoresistance is observed to increase by a factor of ∼300 from 0 to 45 T without the system undergoing any metal-insulator transition. We discuss how this colossal magnetoresistance effect cannot be attributed to the spin degree of freedom or localization physics, but most likely emanates from strong magneto-orbital coupling between the two-dimensional electron gas and the magnetic field. Our observation is consistent with a field-induced 2D-to-3D transition in the confined electronic system.

Two-dimensional metal-insulator transition as a percolation transition in a high-mobility electron system

By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high-mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this 2D electron system is a density inhomogeneity driven percolation transition due to the breakdown of screening in the random charged impurity disorder background. In particular, our measured conductivity exponent of approximately 1.4 approaches the 2D percolation exponent value of 4/3 at low temperatures and our experimental data are inconsistent with there being a zero-temperature quantum critical point in our system.

Strongly enhanced hole-phonon coupling in the metallic state of the dilute two-dimensional hole gas

We have studied the temperature dependent phonon emission rate P(T) of a strongly interacting (r(s) > or =22) dilute 2D GaAs hole system using a standard carrier heating technique. In the still poorly understood metallic state, we observe that P(T) changes from P(T) approximately T5 to P(T) approximately T7 above 100 mK, indicating a crossover from screened piezoelectric (PZ) coupling to screened deformation potential (DP) coupling for hole-phonon scattering. Quantitative comparison with theory shows that the long range PZ coupling between holes and phonons has the expected magnitude; however, in the metallic state, the short range DP coupling between holes and phonons is almost 20 times stronger than expected from theory. The density dependence of P(T) shows that it is easier to cool low-density 2D holes in GaAs than higher density 2D hole systems.

Weak-localization-like temperature-dependent conductivity of a dilute two-dimensional hole gas in a parallel magnetic field

We have studied the magnetotransport properties of a high mobility two-dimensional hole gas (2DHG) in a 10 nm GaAs quantum well with densities in the range of (0.7-1.6) x 10(10) cm(-2) on the metallic side of the zero-field "metal-insulator transition." In a parallel field well above B(c) that suppresses the metallic conductivity, the 2DHG exhibits a conductivity Delta(g)(T) approximately (1/pi) (e(2)/h)lnT reminiscent of weak localization for Fermi liquids. The experiments are consistent with the coexistence of two phases in our system: a metallic phase and a weakly insulating Fermi liquid phase.