Magnetologic with alpha-MnAs thin films

In Depth Spatially Inhomogeneous Phase Transition in Epitaxial MnAs Film on GaAs(001)

Most studies on MnAs material in its bulk form have been focused on its temperature-dependent structural phase transition accompanied by a magnetic one. Magnetostructural phase transition parameters in thin MnAs films grown on substrates present however some differences from the bulk behavior, and local studies become mandatory for a deeper understanding of the mechanisms involved within the transition. Up to now, only surface techniques have been carried out, while the transition is a three-dimensional phenomenon. We therefore developed an original nanometer scale methodology using electron holography to investigate the phase transition in an epitaxial MnAs thin film on GaAs(001) from the cross-section view. Using quantitative magnetic maps recorded at the nanometer scale as a function of the temperature, our work provides a direct in situ observation of the inhomogeneous spatial distribution of the transition in the layer depth and brings new insights on the fundamental transition mechanisms.

The role of magnetoelastic and magnetostrictive energies in the magnetization process of MnAs/GaAs epilayers

In this work we present a detailed study of the anisotropic magnetic behavior of MnAs epilayers grown by molecular beam epitaxy on GaAs(001) and GaAs(111)B substrates. An extended approach of the Stoner-Wohlfarth model is used to simulate magnetic hysteresis loops of MnAs epilayers for temperatures around the magnetostructural phase transition. We demonstrate that magnetoelastic and magnetostrictive energy contributions to the magnetic free energy density are crucial to correctly describe the magnetization of both kinds of MnAs epilayers.

Magnetic logic using nanowires with perpendicular anisotropy

In addition to a storage function through the magnetization of nanowires, domain wall propagation can be used to trigger magnetic logic functions. Here, we present a new way to realize a pure magnetic logic operation by using magnetic nanowires with perpendicular anisotropy. Emphasis is given on the generation of the logic function 'NOT' that is based on the dipolar interaction between two neighbouring magnetic wires, which favours the creation of a domain wall. This concept has been validated on several prototypes and the results fit well with the expectations.

Direct observation on the temperature-dependent change of magnetic domains in epitaxial MnAs film on GaAs (001)

We present a systematic change of the magnetic domain structure with temperature in epitaxial ferromagnetic MnAs film on GaAs (001), observed in a wide temperature range of 15-45 degrees C by magnetic force microscopy. Interestingly, it is found that, as temperature increases, the domain structure within the ferromagnetic alpha-MnAs stripes shows a mixture of head-on and simple domains at 15 degrees C and then, takes a complete transition to simple ones above 15 degrees C. This change could be understood by change in the demagnetizing factor of the cross-section of the ferromagnetic stripes with temperature.