Domain walls in antiferromagnetically coupled multilayer films

Fast current-induced skyrmion motion in synthetic antiferromagnets

Magnetic skyrmions are topological magnetic textures that hold great promise as nanoscale bits of information in memory and logic devices. Although room-temperature ferromagnetic skyrmions and their current-induced manipulation have been demonstrated, their velocity has been limited to about 100 meters per second. In addition, their dynamics are perturbed by the skyrmion Hall effect, a motion transverse to the current direction caused by the skyrmion topological charge. Here, we show that skyrmions in compensated synthetic antiferromagnets can be moved by current along the current direction at velocities of up to 900 meters per second. This can be explained by the cancellation of the net topological charge leading to a vanishing skyrmion Hall effect. Our results open an important path toward the realization of logic and memory devices based on the fast manipulation of skyrmions in tracks.

Dipolar skyrmions and antiskyrmions of arbitrary topological charge at room temperature

Magnetic skyrmions are localized, stable topological magnetic textures that can move and interact with each other like ordinary particles when an external stimulus is applied. The efficient control of the motion of spin textures using spin-polarized currents opened an opportunity for skyrmionic devices such as racetrack memory and neuromorphic or reservoir computing. The coexistence of skyrmions with high topological charge in the same system promises further possibilities for efficient technological applications. In this work, we directly observe dipolar skyrmions and antiskyrmions with arbitrary topological charge in Co/Ni multilayers at room temperature. We explore the dipolar-stabilized spin objects with topological charges of up to 10 and characterize their nucleation process, their energy dependence on the topological charge and the effect of the material parameters on their stability. Furthermore, our micromagnetic simulations demonstrate spin-transfer-induced motion of these spin objects, which is important for their potential device application.

Kinkless Electronic Junction along 1D Electronic Channel Embedded in a Van Der Waals Layer

Here, the formation of type-I and type-II electronic junctions with or without any structural discontinuity along a well-defined 1 nm-wide 1D electronic channel within a van der Waals layer is reported. Scanning tunneling microscopy and spectroscopy techniques are employed to investigate the atomic and electronic structure along peculiar domain walls formed on the charge-density-wave phase of 1T-TaS2 . Distinct kinds of abrupt electronic junctions with discontinuities of the band gap along the domain walls are found, some of which even do not have any structural kinks and defects. Density-functional calculations reveal a novel mechanism of the electronic junction formation; they are formed by a kinked domain wall in the layer underneath through substantial electronic interlayer coupling. This work demonstrates that the interlayer electronic coupling can be an effective control knob over nanometer-scale electronic property of 2D atomic monolayers.

Tailoring Exchange-Dominated Synthetic Layered Antiferromagnets: From Collective Magnetic Reversal to Exchange Bias

Not only since the progressive reduction of structure sizes in modern micro- and nanotechnology, surface and interface effects have played an ever-increasing role and nowadays often dominate the behavior of entire systems. Therefore, understanding the nature of surface and interface effects and being able to fully control them is of fundamental importance, in particular in modern thin-film technology. In this study, it is revealed how Co/Pt multilayer-based synthetic antiferromagnets (SAFs) with perpendicular magnetic anisotropy in the regime of dominating antiferromagnetic interlayer exchange can be employed to control the collective magnetic reversal via systematically altering surface and interface effects. The specifically designed samples and experiments highlight the superior tunability of synthetic systems as compared to their intrinsic stoichiometric counterparts, where the antiferromagnetism is directly tied to the indivisible discrete atomic nature and crystal structure of the materials. Thus, it is demonstrated that in SAFs, it becomes possible to energetically heal the broken magnetic symmetry at the surface, thereby enabling either on demand suppression or controlled enhancement of respective surface and interface effects, as demonstrated here in this study for the surface spin-flop and the exchange bias effect.

Robust A-Type Order and Spin-Flop Transition on the Surface of the Antiferromagnetic Topological Insulator MnBi_{2}Te_{4}

Here, we present microscopic evidence of the persistence of uniaxial A-type antiferromagnetic order to the surface layers of MnBi_{2}Te_{4} single crystals using magnetic force microscopy. Our results reveal termination-dependent magnetic contrast across both surface step edges and domain walls, which can be screened by thin layers of soft magnetism. The robust surface A-type order is further corroborated by the observation of termination-dependent surface spin-flop transitions, which have been theoretically proposed decades ago. Our results not only provide key ingredients for understanding the electronic properties of the antiferromagnetic topological insulator MnBi_{2}Te_{4}, but also open a new paradigm for exploring intrinsic surface metamagnetic transitions in natural antiferromagnets.

Magnetic Imaging of Domain Walls in the Antiferromagnetic Topological Insulator MnBi2Te4

The control of domain walls or spin textures is crucial for spintronic applications of antiferromagnets. Despite many efforts, it has been challenging to directly visualize antiferromagnetic domains or domain walls with nanoscale resolution, especially in magnetic field. Here, we report magnetic imaging of domain walls in several uniaxial antiferromagnets, the topological insulator MnBi₂Te₄ family, using cryogenic magnetic force microscopy (MFM). Our MFM results reveal higher magnetic susceptibility inside the domain walls than in domains. Domain walls in these antiferromagnets form randomly with strong thermal and magnetic field dependence. The direct visualization of these domain walls and domain structures in the magnetic field will not only facilitate the exploration of intrinsic topological phenomena in antiferromagnetic topological insulators but will also open a new path toward control and manipulation of domain walls or spin textures in functional antiferromagnets.

Room-temperature stabilization of antiferromagnetic skyrmions in synthetic antiferromagnets

Room-temperature skyrmions in ferromagnetic films and multilayers show promise for encoding information bits in new computing technologies. Despite recent progress, ferromagnetic order generates dipolar fields that prevent ultrasmall skyrmion sizes, and allows a transverse deflection of moving skyrmions that hinders their efficient manipulation. Antiferromagnetic skyrmions shall lift these limitations. Here we demonstrate that room-temperature antiferromagnetic skyrmions can be stabilized in synthetic antiferromagnets (SAFs), in which perpendicular magnetic anisotropy, antiferromagnetic coupling and chiral order can be adjusted concurrently. Utilizing interlayer electronic coupling to an adjacent bias layer, we demonstrate that spin-spiral states obtained in a SAF with vanishing perpendicular magnetic anisotropy can be turned into isolated antiferromagnetic skyrmions. We also provide model-based estimates of skyrmion size and stability, showing that room-temperature antiferromagnetic skyrmions below 10 nm in radius can be anticipated in further optimized SAFs. Antiferromagnetic skyrmions in SAFs may thus solve major issues associated with ferromagnetic skyrmions for low-power spintronic devices.

Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures

Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here, we report multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance that is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI3. Our work reveals the possibility to push magnetic information storage to the atomically thin limit and highlights CrI3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.

Relaxation dynamics of magnetization transitions in synthetic antiferromagnet with perpendicular anisotropy

Two synthetic antiferromagnet bilayer systems with strong perpendicular anisotropy CoFeB/Ta/CoFeB and Pt/Co/Ir/Co/Pt have been grown using sputtering techniques. For both systems two types of magnetization transitions have been studied. The first one concerns transitions from a state where magnetizations of the two magnetic layers are parallel (P state) to a state where magnetizations of the two layers are aligned antiparallel (AP state). The second one concerns transitions between the two possible antiparallel alignments (AP+  to AP-). For both systems and both transitions after-effect measurements can be understood in the frame of nucleation-propagation model. Time derivative analysis of magnetic relaxation curves and mapping of the first order reversal curves at different temperature allowed us to demonstrate the presence of different pinning centers, which number can be controlled by magnetic field and temperature.

Synthetic ferrimagnet nanowires with very low critical current density for coupled domain wall motion

Domain walls in ferromagnetic nanowires are potential building-blocks of future technologies such as racetrack memories, in which data encoded in the domain walls are transported using spin-polarised currents. However, the development of energy-efficient devices has been hampered by the high current densities needed to initiate domain wall motion. We show here that a remarkable reduction in the critical current density can be achieved for in-plane magnetised coupled domain walls in CoFe/Ru/CoFe synthetic ferrimagnet tracks. The antiferromagnetic exchange coupling between the layers leads to simple Néel wall structures, imaged using photoemission electron and Lorentz transmission electron microscopy, with a width of only ~100 nm. The measured critical current density to set these walls in motion, detected using magnetotransport measurements, is 1.0 × 1011 Am-2, almost an order of magnitude lower than in a ferromagnetically coupled control sample. Theoretical modelling indicates that this is due to nonadiabatic driving of anisotropically coupled walls, a mechanism that can be used to design efficient domain-wall devices.

Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics

The integration of magnetic material with semiconductors has been fertile ground for fundamental science as well as of great practical interest toward the seamless integration of information processing and storage. We create van der Waals heterostructures formed by an ultrathin ferromagnetic semiconductor CrI₃ and a monolayer of WSe₂. We observe unprecedented control of the spin and valley pseudospin in WSe₂, where we detect a large magnetic exchange field of nearly 13 T and rapid switching of the WSe₂ valley splitting and polarization via flipping of the CrI₃ magnetization. The WSe₂ photoluminescence intensity strongly depends on the relative alignment between photoexcited spins in WSe₂ and the CrI₃ magnetization, because of ultrafast spin-dependent charge hopping across the heterostructure interface. The photoluminescence detection of valley pseudospin provides a simple and sensitive method to probe the intriguing domain dynamics in the ultrathin magnet, as well as the rich spin interactions within the heterostructure.

Expansion and relaxation of magnetic mirror domains in a Pt/Co/Pt/Co/Pt multilayer with antiferromagnetic interlayer coupling

We detail measurements of field-driven expansion and zero-field relaxation of magnetic mirror domains in antiferromagnetically coupled perpendicularly magnetized ultrathin Co layers. The zero-field stability of aligned ('mirror') domains in such systems results from non-homogeneous dipolar stray fields which exist in the vicinity of the domain walls. During field-driven domain expansion, we evidence a separation of the domain walls which form the mirror domain boundary. However, the walls realign, thereby reforming a mirror domain, if their final separation is below a critical distance at the end of the field pulse. This critical distance marks the point at which the effective net interaction between the walls changes from attractive to repulsive.

Domain size and structure in exchange coupled [Co/Pt]/NiO/[Co/Pt] multilayers

We investigate the competing effects of interlayer exchange coupling and magnetostatic coupling in the magnetic heterostructure ([Co/Pt]/NiO/[Co/Pt]) with perpendicular magnetic anisotropy (PMA). This particular heterostructure is unique among coupled materials with PMA in directly exhibiting both ferromagnetic and antiferromagnetic coupling, oscillating between the two as a function of spacer layer thickness. By systematically tuning the coupling interactions via a wedge-shaped NiO spacer layer, we explore the energetics that dictate magnetic domain formation using high resolution magnetic force microscopy coupled with the magneto-optical Kerr effect. This technique probes the microscopic and macroscopic magnetic behavior as a continuous function of thickness and the interlayer exchange coupling, including the regions where interlayer coupling goes through zero. We see significant changes in domain structure based on the sign of coupling, and also show that magnetic domain size is directly related to the magnitude of the interlayer exchange coupling energy, which generally dominates over the magnetostatic interactions. When magnetostatic interactions become comparable to the interlayer exchange coupling, a delicate interplay between the differing energy contributions is apparent and energy scales are extracted. The results are of intense interest to the magnetic recording industry and also illustrate a relatively new avenue of undiscovered physics, primarily dealing with the delicate balance of energies in the formation of magnetic domains for coupled systems with PMA, defining limits on domain size as well as the interplay between roughness, domains and magnetic coupling.

Electrostatics and optimal arrangement of ionic triangular lattices confined to cylindrical fibers

We study the optimal packing of triangular ionic lattices on the surface of nanofibers. We compute the favored orientation of the lattice with respect to the axis of the cylindrical fiber, and we determine the effects of the surface curvature. Electrostatic interactions prefer chiral arrangements only for special families of lattices that depend on the fiber diameter. However, there are families of lattices that energetically promote achiral configurations. Besides the long-range Coulomb interactions we consider the behavior of short-range elastic forces, represented by interconnected springs between neighboring ions. In this case a different family of achiral lattices is always preferred. We also show that varying the stoichiometric composition of charges, as well as including higher-order curvature effects, does not significantly modify such a scenario.

Coarsening of bicontinuous structures via nonconserved and conserved dynamics

Coarsening subsequent to phase separations occurs in many two-phase mixtures. While unique scaled particle size distributions have been determined for highly asymmetric mixtures in which spherical particles form in a matrix, it is not known if a unique scaled structure exists for symmetric mixtures, which yield bicontinuous structures having intricately interpenetrating phase domains. Using large-scale simulations, we have established that unique scaled microstructures exist in symmetric mixtures evolving via nonconserved and conserved dynamics. We characterize their morphologies by the interfacial shape distribution, a counterpart to the particle size distribution, and their topologies by the genus. We find that the two dynamics result in unique, but different, scaled interfacial shape distributions, with conserved dynamics yielding a narrower distribution around zero mean curvature. In contrast, the two scaled structures are topologically similar, having nearly equal values of the scaled genus.

Antisymmetric magnetoresistance in magnetic multilayers with perpendicular anisotropy

While magnetoresistance (MR) has generally been found to be symmetric in applied field in nonmagnetic or magnetic metals, we have observed antisymmetric MR in Co/Pt multilayers. Simultaneous domain imaging and transport measurements show that the antisymmetric MR is due to the appearance of domain walls that run perpendicular to both the magnetization and the current, a geometry existing only in materials with perpendicular magnetic anisotropy. As a result, the extraordinary Hall effect gives rise to circulating currents in the vicinity of the domain walls that contributes to the MR. The antisymmetric MR and extraordinary Hall effect have been quantitatively accounted for by a theoretical model.

Magnetic stripe domains in coupled magnetic sandwiches

Magnetic stripe domains in the spin reorientation transition region are investigated in (Fe/Ni)/Cu(001) and Co/Cu/(Fe/Ni)/Cu(001) using photoemission electron microscopy. For (Fe/Ni)/Cu(001), the stripe domain width decreases exponentially as the Fe/Ni film approaches the spin reorientation transition point. For Co/Cu/(Fe/Ni)/Cu(001), the Fe/Ni stripe orientation is aligned with the Co in-plane magnetization, and the stripe domain width decreases exponentially with increasing the interlayer coupling between the Fe/Ni and Co films. By considering magnetic stripes within an in-plane magnetic field, we reveal a universal dependence of the stripe domain width on the magnetic anisotropy and on the interlayer coupling.