Pressure-induced magnetic order in golden SmS

Pathak A, Novikov D, Leitus G, Kaplan-Ashiri I, Kolíbal M, Enyashin AN, Houben L, Tenne R. Nanotubes from the Misfit Layered Compound (SmS)1.19TaS2: Atomic Structure, Charge Transfer, and Electrical Properties

Misfit layered compounds (MLCs) MX-TX₂, where M, T = metal atoms and X = S, Se, or Te, and their nanotubes are of significant interest due to their rich chemistry and unique quasi-1D structure. In particular, LnX-TX₂ (Ln = rare-earth atom) constitute a relatively large family of MLCs, from which nanotubes have been synthesized. The properties of MLCs can be tuned by the chemical and structural interplay between LnX and TX₂ sublayers and alloying of each of the Ln, T, and X elements. In order to engineer them to gain desirable performance, a detailed understanding of their complex structure is indispensable. MLC nanotubes are a relative newcomer and offer new opportunities. In particular, like WS₂ nanotubes before, the confinement of the free carriers in these quasi-1D nanostructures and their chiral nature offer intriguing physical behavior. High-resolution transmission electron microscopy in conjunction with a focused ion beam are engaged to study SmS-TaS₂ nanotubes and their cross-sections at the atomic scale. The atomic resolution images distinctly reveal that Ta is in trigonal prismatic coordination with S atoms in a hexagonal structure. Furthermore, the position of the sulfur atoms in both the SmS and the TaS₂ sublattices is revealed. X-ray photoelectron spectroscopy, electron energy loss spectroscopy, and X-ray absorption spectroscopy are carried out. These analyses conclude that charge transfer from the Sm to the Ta atoms leads to filling of the Ta 5d _{z ²} level, which is confirmed by density functional theory (DFT) calculations. Transport measurements show that the nanotubes are semimetallic with resistivities in the range of 10^-4 Ω·cm at room temperature, and magnetic susceptibility measurements show a superconducting transition at 4 K.

Valence transition in topological Kondo insulator

We investigate the valence transition in three-dimensional topological Kondo insulator through slave-boson analysis of periodic Anderson model. By including the effect of intra-atomic Coulomb correlation [Formula: see text] between conduction and local electrons, we find a first-order valence transition from Kondo region to mixed valence state upon ascending of local f- level above a critical [Formula: see text], and this valence transition usually occurs very close to or simultaneously with a topological transition. Near the parameter region of zero-temperature valence transition, rise of temperature can generate a thermal valence transition from mixed valence to Kondo region, accompanied by a first-order topological transition. Remarkably, above a critical [Formula: see text] which is considerably smaller than that generating paramagnetic valence transition, the original continuous antiferromagnetic transition is shifted to first order one, at which a discontinuous valence shift takes place. Upon increasing [Formula: see text], the paramagnetic valence transition approaches then converges with the first-order antiferromagnetic transition, leaving a significant valence shift on the magnetic boundary. The continuous antiferromagnetic transition, first-order antiferromagnetic transition, paramagnetic valence transition and topological transitions are all summarized in a global phase diagram. Our proposed exotic transition processes can help to understand the thermal valence variation as well as the valence shift around the pressure-induced magnetic transition in topological Kondo insulator candidates and in other heavy-fermion systems.

Switchable Piezoresistive SmS Thin Films on Large Area

Samarium monosulfide (SmS) is a switchable material, showing a pressure-induced semiconductor to metal transition. As such, it can be used in different applications such as piezoresistive sensors and memory devices. In this work, we present how e-beam sublimation of samarium metal in a reactive atmosphere can be used for the deposition of semiconducting SmS thin films on 150 mm diameter silicon wafers. The deposition parameters influencing the composition and properties of the thin films are evaluated, such as the deposition rate of Sm metal, the substrate temperature and the H₂S partial pressure. We then present the changes in the optical, structural and electrical properties of this compound after the pressure-induced switching to the metallic state. The back-switching and stability of SmS thin films are studied as a function of temperature and atmosphere via in-situ X-ray diffraction. The thermally induced back switching initiates at 250 °C, while above 500 °C, Sm₂O₂S is formed. Lastly, we explore the possibility to determine the valence state of the samarium ions by means of X-ray photoelectron spectroscopy.

Samarium Monosulfide (SmS): Reviewing Properties and Applications

In this review, we give an overview of the properties and applications of samarium monosulfide, SmS, which has gained considerable interest as a switchable material. It shows a pressure-induced phase transition from the semiconducting to the metallic state by polishing, and it switches back to the semiconducting state by heating. The material also shows a magnetic transition, from the paramagnetic state to an antiferromagnetically ordered state. The switching behavior between the semiconducting and metallic states could be exploited in several applications, such as high density optical storage and memory materials, thermovoltaic devices, infrared sensors and more. We discuss the electronic, optical and magnetic properties of SmS, its switching behavior, as well as the thin film deposition techniques which have been used, such as e-beam evaporation and sputtering. Moreover, applications and possible ideas for future work on this material are presented. Our scope is to present the properties of SmS, which were mainly measured in bulk crystals, while at the same time we describe the possible deposition methods that will push the study of SmS to nanoscale dimensions, opening an intriguing range of applications for low-dimensional, pressure-induced semiconductor-metal transition compounds.

Pressure-Resistant Intermediate Valence in the Kondo Insulator SmB_{6}

Resonant x-ray emission spectroscopy was used to determine the pressure dependence of the f-electron occupancy in the Kondo insulator SmB_{6}. Applied pressure reduces the f occupancy, but surprisingly, the material maintains a significant divalent character up to a pressure of at least 35 GPa. Thus, the closure of the resistive activation energy gap and onset of magnetic order are not driven by stabilization of an integer valent state. Over the entire pressure range, the material maintains a remarkably stable intermediate valence that can in principle support a nontrivial band structure.

Topological Properties and the Dynamical Crossover from Mixed-Valence to Kondo-Lattice Behavior in the Golden Phase of SmS

We have investigated temperature-dependent behaviors of electronic structure and resistivity in a mixed-valent golden phase of SmS, based on the dynamical mean-field-theory band-structure calculations. Upon cooling, the coherent Sm 4f bands are formed to produce the hybridization-induced pseudogap near the Fermi level, and accordingly the topology of the Fermi surface is changed to exhibit a Lifshitz-like transition. The surface states emerging in the bulk gap region are found to be not topologically protected states but just typical Rashba spin-polarized states, indicating that SmS is not a topological Kondo semimetal. From the analysis of anomalous resistivity behavior in SmS, we have identified universal energy scales, which characterize the Kondo-mixed-valent semimetallic systems.

Pressure-induced inhomogeneous chiral-spin ground state in FeGe

(57)Fe nuclear forward scattering on the chiral magnet FeGe reveals an extremely large precursor phase region above the helimagnetic ordering temperature T(C)(p) and beyond the pressure-induced quantum phase transition at 19 GPa. The decrease of the magnetic hyperfine field ⟨B(hf)⟩ with pressure is accompanied by a large increase of the width of the distribution of ⟨B(hf)⟩, indicating a strong quasistatic inhomogeneity of the magnetic states in the precursor region. Hyperfine fields of the order of 4 T (equivalent to a magnetic moment μ(Fe)≈0.4μ(B)) persist up to 28.5 GPa. No signatures of magnetic order have been found at about 31 GPa. The results, supported by ab initio calculations, suggest that chiral magnetic precursor phenomena, such as an inhomogeneous chiral-spin state, are vastly enlarged due to increasing spin fluctuations as FeGe is tuned to its quantum phase transition.

Milli-electronvolt monochromatization of hard X-rays with a sapphire backscattering monochromator

A sapphire backscattering monochromator with 1.1 (1) meV bandwidth for hard X-rays (20-40 keV) is reported. The optical quality of several sapphire crystals has been studied and the best crystal was chosen to work as the monochromator. The small energy bandwidth has been obtained by decreasing the crystal volume impinged upon by the beam and by choosing the crystal part with the best quality. The monochromator was tested at the energies of the nuclear resonances of (121)Sb at 37.13 keV, (125)Te at 35.49 keV, (119)Sn at 23.88 keV, (149)Sm at 22.50 keV and (151)Eu at 21.54 keV. For each energy, specific reflections with sapphire temperatures in the 150-300 K region were chosen. Applications to nuclear inelastic scattering with these isotopes are demonstrated.

Stoichiometric valence and structural valence--two different sides of the same coin: "bonding power"

Recent studies use the term valence to describe two distinct aspects of the phenomenon bonding power of an atom. Measured in valence units, one valence term, the classical chemical valence, has integer values and is derived solely from the composition of a compound. The second one, used mainly by solid-state physicists and crystallographers, has non-integer values. It is determined from structure data, which are derived from diffraction experiments, spectroscopy, or quantum-chemical calculations. To distinguish clearly between these two types of valencies, the descriptive terms stoichiometric valence and structural valence and the respective symbols (stoich)V and (struct)V should be used. For the majority of crystalline structures, values of (stoich)V and (struct)V, both measured in valence units, differ by less than 5%. However, for p-block atoms with one lone electron pair, differences between (stoich)V and (struct)V of up to 30% have been reported.

Mixed valency in rare-earth fullerides

Mixed-valence phenomena associated with the highly correlated narrow-band behaviour of the 4f electrons in rare earths are well documented for a variety of rare-earth chalcogenides, borides and intermetallics (Kondo insulators and heavy fermions). The family of rare-earth fullerides with stoichiometry RE2.75C60 (RE=Sm, Yb, Eu) also displays an analogous phenomenology and a remarkable sensitivity of the rare-earth valency to external stimuli (temperature and pressure) making them the first known molecular-based members of this fascinating class of materials. Using powerful crystallographic and spectroscopic techniques which provide direct indications of what is happening in these materials at the microscopic level, we find a rich variety of temperature- and pressure-driven abrupt or continuous valence transitions-the electronically active fulleride sublattice acts as an electron reservoir that can accept electrons from or donate electrons to the rare-earth 4f/5d bands, thereby sensitively modulating the valence of the rare-earth sublattice.

Valence and magnetic ordering in intermediate valence compounds: TmSe versus SmB(6)

The intermediate valence systems TmSe and SmB(6) have been investigated up to 16 and 18 GPa by ac microcalorimetry with a pressure (p) tuning realized in situ at low temperature. For TmSe, the transition from an antiferromagnetic insulator for p<3 GPa to an antiferromagnetic metal at higher pressure has been confirmed. A drastic change in the p variation of the Néel temperature (T(N)) is observed at 3 GPa. In the metallic phase (p>3 GPa), T(N) is found to increase linearly with p. A similar linear p increase of T(N) is observed for the quasitrivalent compound TmS, which is at ambient pressure equivalent to TmSe at p∼7 GPa. In the case of SmB(6) long range magnetism has been detected above p∼8 GPa, i.e. at a pressure slightly higher than the pressure of the insulator to metal transition. However a homogeneous magnetic phase occurs only above 10 GPa. The magnetic and electronic properties are related to the renormalization of the 4f wavefunction either to the divalent or the trivalent configurations. As observed in SmS, long range magnetism in SmB(6) occurs already far below the pressure where a trivalent Sm(3+) state will be reached. It seems possible to describe roughly the physical properties of the intermediate valence equilibrium by assuming formulae for the Kondo lattice temperature depending on the valence configuration. Comparison is also made with the appearance of long range magnetism in cerium and ytterbium heavy fermion compounds.

High-pressure ground state of SmB6: electronic conduction and long range magnetic order

High-pressure 149Sm nuclear forward scattering of synchrotron radiation and specific heat measurements have been performed on the intermediate valent Kondo insulator SmB6. The results show that at a critical pressure p(c) approximately = 6 GPa, where the charge gap closes, a first order transition occurs to a magnetically ordered state, which shows typical features of trivalent samarium compounds. The similarity with SmS stresses the role of local correlations and gives important insight into the debate on the local or itinerant character of the f electrons in heavy fermion systems.