Visualization of diamond nucleation and growth from energetic species

Nucleation of diamond films on heterogeneous substrates: a review

Diamond thin films are known to have properties similar to bulk diamond and have applications in both industry and fundamental studies in academia. The high surface energy of diamond makes it extremely difficult to grow diamond films on foreign substrates. Hence, to grow diamond films on non-diamond substrates, a nucleation step is needed. In this review various techniques used for diamond nucleation/seeding will be discussed. At present electrostatic seeding by diamond nanoparticles is the most commonly used seeding technique for nanocrystalline growth. In this technique the substrate is dipped in a nanodiamond solution to form a mono layer of diamond seeds. These seeds when exposed to appropriate conditions grow to form diamond layers. This technique is suitable for most substrates. For heteroepitaxial growth, bias enhanced nucleation is the primary technique. In this technique the substrate is biased to form diamond nuclei in the initial stages of growth. This technique can be used for any conducting flat surface. For growth on ceramics, polishing by diamond grit or electrostatic seeding can be used. Polishing the ceramics with diamond powder leaves small diamond particles embedded in the substrate. These small particles then act as seeds for subsequent diamond growth. Apart from these techniques, chemical nucleation, interlayer driven nucleation and mixed techniques have been discussed. The advantages and disadvantages of individual techniques have also been discussed.

Growth of diamond film on heterogeneous substrates assisted by nucleation/seeding.

Self-Ordered Orientation of Crystalline Hexagonal Boron Nitride Nanodomains Embedded in Boron Carbonitride Films for Band Gap Engineering

Boron carbonitride (BCN) films containing hybridized bonds involving elements B, C, and N over wide compositional ranges enable an abundant variety of new materials, electronic structures, properties, and applications, owing to their semiconducting properties with variable band gaps. However, it still remains challenging to achieve band gap-engineered BCN ternary with a controllable composition and well-established ordered structure. Herein, we report on the synthesis and characterization of hybridized BCN materials, consisting of self-ordered hexagonal BN (h-BN) crystalline nanodomains, with its aligned basal planes preferentially perpendicular to the substrate, depending on the growth conditions. The observation of the two sets of different band absorptions suggests that the h-BN nanodomains are distinguished enough to resume their individual band gap identity from the BCN films, which decreases as the carbon content increases in the BCN matrix, due to the doping and/or boundary effect. Our results reveal that the structural features and band gap of this form of hybrid BCN films are strongly correlated with the kinetic growth factors, making it a great system for further fundamental physical research and for potential in the development of band gap-engineered applications in optoelectronics.

Preferentially grown ultranano c-diamond and n-diamond grains on silicon nanoneedles from energetic species with enhanced field-emission properties

The design and fabrication of well-defined nanostructures have great importance in nanoelectronics. Here we report the precise growth of sub-2 nm (c-diamond) and above 5 nm (n-diamond) size diamond grains from energetic species (chemical vapor deposition process) at low growth temperature of about 460 °C. We demonstrate that a pre-nucleation induced interface can be accounted for the growth of c-diamond or n-diamond grains on Si-nanoneedles (Si-NN). These preferentially grown allotropic forms of diamond on Si-NN have shown high electron field-emission properties and signify their high potential towards diamond-based electronic applications.

Synthesis of highly transparent ultrananocrystalline diamond films from a low-pressure, low-temperature focused microwave plasma jet

This paper describes a new low-temperature process underlying the synthesis of highly transparent ultrananocrystalline diamond [UNCD] films by low-pressure and unheated microwave plasma jet-enhanced chemical vapor deposition with Ar-1%CH4-10%H2 gas chemistry. The unique low-pressure/low-temperature [LPLT] plasma jet-enhanced growth even with added H2 and unheated substrates yields UNCD films similar to those prepared by plasma-enhanced growth without addition of H2 and heating procedure. This is due to the focused plasma jet which effectively compensated for the sluggish kinetics associated with LPLT growth. The effects of pressure on UNCD film synthesis from the microwave plasma jet were systematically investigated. The results indicated that the substrate temperature, grain size, surface roughness, and sp3 carbon content in the films decreased with decreasing pressure. The reason is due to the great reduction of Hα emission to lower the etching of sp2 carbon phase, resulting from the increase of mean free path with decreasing pressure. We have demonstrated that the transition from nanocrystalline (80 nm) to ultrananocrystalline (3 to 5 nm) diamond films grown via microwave Ar-1%CH4-10%H2 plasma jets could be controlled by changing the pressure from 100 to 30 Torr. The 250-nm-thick UNCD film was synthesized on glass substrates (glass transition temperature [Tg] 557°C) using the unique LPLT (30 Torr/460°C) microwave plasma jet, which produced UNCD films with a high sp3 carbon content (95.65%) and offered high optical transmittance (approximately 86% at 700 nm).