Spin filtering in a hybrid ferromagnetic-semiconductor microstructure

Using single and double laser pulses on the molecular Ni4@C48H36 system to design integrated nanospintronic units

The accomplishment of long-distance spin transfer scenarios between several magnetic centers is a big challenge for building and supporting spin-logic units for developing future all-optical magnetic unit operations. Using high-level quantum chemistry theory CCSD and EOM-CCSD, we systematically study the ultrafast laser-induced spin-dynamics process on a carbon-based material, to which four magnetic centers are attached. We show that the CCSD method with the 6-31G basis set calculation is sensitive to the C-Ni bond length. The spin density distribution, which is computed using EOM-CCSD with LanL2DZ+ECP calculations, Mulliken population analysis, including spin-orbit-coupling (SOC) and a magnetic field, fulfills the requirements for achieving spin dynamics processes. Different local spin-flip and spin-transfer processes are accomplished within the subpicosecond regime. The impact of the propagation direction of the laser pulse by switching their polar and the azimuthal angles in spherical coordinates on the spin dynamics processes is analyzed. Double laser pulses with time delay δt ≥ 200 × FWHM yield in a realistic magnetic field gradient selectively a lateral resolution, which corresponds to distances smaller than the CMOS scale (2 nm in 2024) while our system size is comparable to the CMOS scale. Here Λ and V processes with two quasi-degenerate intermediate levels are used. We propose a model of an integrated spin-logic processor created from an array of individual spin-logic blocks, which are realized by four magnetic centers Ni. The findings of this study demonstrate the enormous potential of using laser-induced spin dynamics as the fundamental mechanism for future molecular magnetic technology.

Long-Distance Ultrafast Spin Transfer over a Zigzag Carbon Chain Structure

Using high-level ab initio quantum theory we suggest an optically induced subpicosecond spin-transfer scenario over 4.428 nm, a distance which is directly comparable to the actual CMOS scale. The spin-density transfer takes place between two Ni atoms and over a 40-atom-long zigzag carbon chain. The suitable combination of the local symmetries of the participating carbon atoms and the global symmetry of the whole molecule gives rise to what we term the dynamical Goodenough-Kanamori rules, allowing the long-range coupling of the two Ni atoms. We also present local spin-flip scenarios, and compare spin flip and spin transfer with respect to their sensitivity against an external static magnetic gradient. Finally, we use two identical laser pulses, rather than a single one, which allows us to accurately control local (intrasite) vs global (intersite) processes, and we thus solve the problem of embedding individually addressable molecular nanologic elements in an integrated nanospintronic circuit. Our results underline the great potential of carbon chain systems as building and supporting blocks for designing future all-optical magnetic processing units.

Electron dynamics in inhomogeneous magnetic fields

This review explores the dynamics of two-dimensional electrons in magnetic potentials that vary on scales smaller than the mean free path. The physics of microscopically inhomogeneous magnetic fields relates to important fundamental problems in the fractional quantum Hall effect, superconductivity, spintronics and graphene physics and spins out promising applications which will be described here. After introducing the initial work done on electron localization in random magnetic fields, the experimental methods for fabricating magnetic potentials are presented. Drift-diffusion phenomena are then described, which include commensurability oscillations, magnetic channelling, resistance resonance effects and magnetic dots. We then review quantum phenomena in magnetic potentials including magnetic quantum wires, magnetic minibands in superlattices, rectification by snake states, quantum tunnelling and Klein tunnelling. The third part is devoted to spintronics in inhomogeneous magnetic fields. This covers spin filtering by magnetic field gradients and circular magnetic fields, electrically induced spin resonance, spin resonance fluorescence and coherent spin manipulation.

Quantum interference of magnetic edge channels activated by intersubband optical transitions in magnetically confined quantum wires

We investigate the photoresistance of a magnetically confined quantum wire in which microwave-coupled edge channels interfere at two pinning sites in the fashion of a Mach-Zehnder interferometer. The conductance is strongly enhanced by microwave power at B = 0 and develops a complex series of oscillations when the magnetic confinement increases. Both results are quantitatively explained by the activation of forward scattering in a multimode magnetically confined quantum wire. By varying the strength of the magnetic confinement we are able to tune the phase of electrons in the arms of the interferometer. Quantum interferences which develop between pinning sites explain the oscillations of the conductance as a function of the magnetic field. A fit of the data gives the distance between pinning sites as 11 µm. This result suggests that quantum coherence is conserved over a distance three times longer than the electron mean free path.

Semiconductor spintronics

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. While metal spintronics has already found its niche in the computer industry—giant magnetoresistance systems are used as hard disk read heads—semiconductor spintronics is yet to demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor materials, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field.

Coherent single electron spin control in a slanting Zeeman field

We consider a single electron in a 1D quantum dot with a static slanting Zeeman field. By combining the spin and orbital degrees of freedom of the electron, an effective quantum two-level (qubit) system is defined. This pseudospin can be coherently manipulated by the voltage applied to the gate electrodes, without the need for an external time-dependent magnetic field or spin-orbit coupling. Single-qubit rotations and the controlled-NOT operation can be realized. We estimated the relaxation (T1) and coherence (T2) times and the (tunable) quality factor. This scheme implies important experimental advantages for single electron spin control.