Spin-orbit-driven coherent oscillations in a few-electron quantum dot

Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits

In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency, as well as the gate-voltage dependence and anisotropy of the hole g factor. We show that a g-matrix formalism can simultaneously capture and discriminate the contributions of two mechanisms so far independently discussed in the literature: one associated with the modulation of the g factor, and measurable by Zeeman energy spectroscopy, the other not. Our approach has a general validity and can be applied to the analysis of other types of spin-orbit qubits.

The energy-level crossing behavior and quantum Fisher information in a quantum well with spin-orbit coupling

We study the energy-level crossing behavior in a two-dimensional quantum well with the Rashba and Dresselhaus spin-orbit couplings (SOCs). By mapping the SOC Hamiltonian onto an anisotropic Rabi model, we obtain the approximate ground state and its quantum Fisher information (QFI) via performing a unitary transformation. We find that the energy-level crossing can occur in the quantum well system within the available parameters rather than in cavity and circuit quantum eletrodynamics systems. Furthermore, the influence of two kinds of SOCs on the QFI is investigated and an intuitive explanation from the viewpoint of the stationary perturbation theory is given.

Exact nonadiabatic holonomic transformations of spin-orbit qubits

An exact analytical solution is derived for the wave function of an electron in a one-dimensional moving quantum dot in a nanowire, in the presence of time-dependent spin-orbit coupling. For cyclic evolutions we show that the spin of the electron is rotated by an angle proportional to the area of a closed loop in the parameter space of the time-dependent quantum dot position and the amplitude of a fictitious classical oscillator driven by time-dependent spin-orbit coupling. By appropriate choice of parameters, we show that the spin may be rotated by an arbitrary angle on the Bloch sphere. Exact expressions for dynamical and geometrical phases are also derived.

Two-color single-photon emission from InAs quantum dots: toward logic information management using quantum light

In this work, we propose the use of the Hanbury-Brown and Twiss interferometric technique and a switchable two-color excitation method for evaluating the exciton and noncorrelated electron-hole dynamics associated with single photon emission from indium arsenide (InAs) self-assembled quantum dots (QDs). Using a microstate master equation model we demonstrate that our single QDs are described by nonlinear exciton dynamics. The simultaneous detection of two-color, single photon emission from InAs QDs using these nonlinear dynamics was used to design a NOT AND logic transference function. This computational functionality combines the advantages of working with light/photons as input/output device parameters (all-optical system) and that of a nanodevice (QD size of ∼ 20 nm) while also providing high optical sensitivity (ultralow optical power operational requirements). These system features represent an important and interesting step toward the development of new prototypes for the incoming quantum information technologies.

Precision control of charge coherence in parallel double dot systems through spin-orbit interaction

In terms of the exact quantum master equation solution for open electronic systems, the coherent dynamics of two charge states described by two parallel quantum dots with one fully polarized electron on either dot is investigated in the presence of spin-orbit interaction. We demonstrate that the double dot system can stay in a dynamically decoherence free space. The coherence between two double dot charge states can be precisely manipulated through a spin-orbit coupling. The effects of the temperature, the finite bandwidth of lead, and the energy deviations during the coherence manipulation are also explored.

Spin-orbit-mediated manipulation of heavy-hole spin qubits in gated semiconductor nanodevices

A novel spintronic nanodevice is proposed that is able to manipulate the single heavy-hole spin state in a coherent manner. It can act as a single quantum logic gate. The heavy-hole spin transformations are realized by transporting the hole around closed loops defined by metal gates deposited on top of the nanodevice. The device exploits Dresselhaus spin-orbit interaction, which translates the spatial motion of the hole into a rotation of the spin. The proposed quantum gate operates on subnanosecond time scales and requires only the application of a weak static voltage which allows for addressing heavy-hole spin qubits individually. Our results are supported by quantum mechanical time-dependent calculations within the four-band Luttinger-Kohn model.

All-electric quantum point contact spin-polarizer

The controlled creation, manipulation and detection of spin-polarized currents by purely electrical means remains a central challenge of spintronics. Efforts to meet this challenge by exploiting the coupling of the electron orbital motion to its spin, in particular Rashba spin-orbit coupling, have so far been unsuccessful. Recently, it has been shown theoretically that the confining potential of a small current-carrying wire with high intrinsic spin-orbit coupling leads to the accumulation of opposite spins at opposite edges of the wire, though not to a spin-polarized current. Here, we present experimental evidence that a quantum point contact -- a short wire -- made from a semiconductor with high intrinsic spin-orbit coupling can generate a completely spin-polarized current when its lateral confinement is made highly asymmetric. By avoiding the use of ferromagnetic contacts or external magnetic fields, such quantum point contacts may make feasible the development of a variety of semiconductor spintronic devices.

All-electric spin control in interference single electron transistors

Single particle interference lies at the heart of quantum mechanics. The archetypal double-slit experiment(1) has been repeated with electrons in vacuum(2,3) up to the more massive C(60) molecules.(4) Mesoscopic rings threaded by a magnetic flux provide the solid-state analogues.(5,6) Intramolecular interference has been recently discussed in molecular junctions.(7-11) Here we propose to exploit interference to achieve all-electrical control of a single electron spin in quantum dots, a highly desirable property for spintronics(12-14) and spin-qubit applications.(15-19) The device consists of an interference single electron transistor,(10,11) where destructive interference between orbitally degenerate electronic states produces current blocking at specific bias voltages. We show that in the presence of parallel polarized ferromagnetic leads the interplay between interference and the exchange interaction on the system generates an effective energy renormalization yielding different blocking biases for majority and minority spins. Hence, by tuning the bias voltage full control over the spin of the trapped electron is achieved.

Phonon-induced decoherence of spin-orbit-driven coherent oscillations in a single InGaAs quantum dot

The effect of direct spin-phonon interactions on spin-orbit-driven coherent oscillations in a single quantum dot proposed by Debald and Emary (2005 Phys. Rev. Lett. 94 226803) is investigated theoretically in terms of the perturbation treatment based on a unitary transformation. It is shown that the decoherence rate induced by acoustic phonons strongly depends on the spin-orbit coupling strength, the magnetic field strength and the dot size.

Electric field induced nuclear spin resonance mediated by oscillating electron spin domains in GaAs-based semiconductors

We demonstrate an alternative nuclear spin resonance using a radio frequency (rf) electric field [nuclear electric resonance (NER)] instead of a magnetic field. The NER is based on the electronic control of electron spins forming a domain structure. The rf electric field applied to a gate excites spatial oscillations of the domain walls and thus temporal oscillations of the hyperfine field to nuclear spins. The rf power and burst duration dependence of the NER spectrum provides insight into the interplay between nuclear spins and the oscillating domain walls.

Direct measurement of the spin-orbit interaction in a two-electron InAs nanowire quantum dot

We demonstrate control of the electron number down to the last electron in tunable few-electron quantum dots defined in catalytically grown InAs nanowires. Using low temperature transport spectroscopy in the Coulomb blockade regime, we propose a method to directly determine the magnitude of the spin-orbit interaction in a two-electron artificial atom with strong spin-orbit coupling. Because of a large effective g factor |g(*)|=8+/-1, the transition from a singlet S to a triplet T+ ground state with increasing magnetic field is dominated by the Zeeman energy rather than by orbital effects. We find that the spin-orbit coupling mixes the T+ and S states and thus induces an avoided crossing with magnitude Delta(SO)=0.25+/-0.05 meV. This allows us to calculate the spin-orbit length lambda(SO) approximately 127 nm in such systems using a simple model.

Spin-orbit mediated control of spin qubits

We propose to use the spin-orbit interaction as a means to control electron spins in quantum dots, enabling both single-qubit and two-qubit operations. Very fast single-qubit operations may be achieved by temporarily displacing the electrons. For two-qubit operations the coupling mechanism is based on a combination of the spin-orbit coupling and the mutual long-ranged Coulomb interaction. Compared to existing schemes using the exchange coupling, the spin-orbit induced coupling is less sensitive to random electrical fluctuations in the electrodes defining the quantum dots.