Few-electron molecular states and their transitions in a single InAs quantum dot molecule

Real Space Observation of Electronic Coupling between Self-Assembled Quantum Dots

The control of quantum coupling between nano-objects is essential to quantum technologies. Confined nanostructures, such as cavities, resonators, or quantum dots, are designed to enhance interactions between electrons, photons, or phonons, giving rise to new properties, on which devices are developed. The nature and strength of these interactions are often measured indirectly on an assembly of dissimilar objects. Here, we adopt an innovative point of view by directly mapping the coupling of single nanostructures using scanning tunneling microscopy and spectroscopy (STM and STS). We take advantage of the unique capabilities of STM/STS to map simultaneously the nano-object's morphology and electronic density in order to observe in real space the electronic coupling of pairs of In(Ga)As/GaAs self-assembled quantum dots (QDs), forming quantum dot molecules (QDMs). Differential conductance maps d I/d V ( E, x, y) demonstrate the presence of an effective electronic coupling, leading to bonding and antibonding states, even for dissymmetric QDMs. The experimental results are supported by numerical simulations. The actual geometry of the QDMs is taken into account to determine the strength of the coupling, showing the crucial role of quantum dot size and pair separation for device growth optimization.

Scanning probe microscopy and spectroscopy of colloidal semiconductor nanocrystals and assembled structures

Colloidal semiconductor nanocrystals become increasingly important in materials science and technology, due to their optoelectronic properties that are tunable by size. The measurement and understanding of their energy levels is key to scientific and technological progress. Here we review how the confined electronic orbitals and related energy levels of individual semiconductor quantum dots have been measured by means of scanning tunneling microscopy and spectroscopy. These techniques were originally developed for flat conducting surfaces, but they have been adapted to investigate the atomic and electronic structure of semiconductor quantum dots. We compare the results obtained on colloidal quantum dots with those on comparable solid-state ones. We also compare the results obtained with scanning tunneling spectroscopy with those of optical spectroscopy. The first three sections provide an introduction to colloidal quantum dots, and a theoretical basis to be able to understand tunneling spectroscopy on dots attached to a conducting surface. In sections 4 and 5 , we review the work performed on lead-chalcogenide nanocrystals and on colloidal quantum dots and rods of II-VI compounds, respectively. In section 6 , we deal with colloidal III-V nanocrystals and compare the results with their self-assembled counter parts. In section 7 , we review the work on other types of semiconductor quantum dots, especially on Si and Ge nanocrystals.

Single-particle and collective excitations in quantum wires made up of vertically stacked quantum dots: zero magnetic field

We report on the theoretical investigation of the elementary electronic excitations in a quantum wire made up of vertically stacked self-assembled InAs/GaAs quantum dots. The length scales (of a few nanometers) involved in the experimental setups prompt us to consider an infinitely periodic system of two-dimensionally confined (InAs) quantum dot layers separated by GaAs spacers. The resultant quantum wire is characterized by a two-dimensional harmonic confining potential in the x-y plane and a periodic (Kronig-Penney) potential along the z (or the growth) direction within the tight-binding approximation. Since the wells and barriers are formed from two different materials, we employ the Bastard's boundary conditions in order to determine the eigenfunctions along the z direction. These wave functions are then used to generate the Wannier functions, which, in turn, constitute the legitimate Bloch functions that govern the electron dynamics along the direction of periodicity. Thus, the Bloch functions and the Hermite functions together characterize the whole system. We then make use of the Bohm-Pines' (full) random-phase approximation in order to derive a general nonlocal, dynamic dielectric function. Thus, developed theoretical framework is then specified to work within a (lowest miniband and) two-subband model that enables us to scrutinize the single-particle as well as collective responses of the system. We compute and discuss the behavior of the eigenfunctions, band-widths, density of states, Fermi energy, single-particle and collective excitations, and finally size up the importance of studying the inverse dielectric function in relation with the quantum transport phenomena. It is remarkable to notice how the variation in the barrier- and well-widths can allow us to tailor the excitation spectrum in the desired energy range. Given the advantage of the vertically stacked quantum dots over the planar ones and the foreseen applications in the single-electron devices and in the quantum computation, it is quite interesting and important to explore the electronic, optical, and transport phenomena in such systems.

Correlation effects in wave function mapping of molecular beam epitaxy grown quantum dots

We investigate correlation effects in the regime of a few electrons in uncapped InAs quantum dots by tunneling spectroscopy and wave function (WF) mapping at high tunneling currents where electron-electron interactions become relevant. Four clearly resolved states are found, whose approximate symmetries are roughly s and p, in order of increasing energy. Because the major axes of the p-like states coincide, the WF sequence is inconsistent with the imaging of independent-electron orbitals. The results are explained in terms of many-body tunneling theory, by comparing measured maps with those calculated by taking correlation effects into account.

Universal set of quantum gates for double-dot spin qubits with fixed interdot coupling

We propose a set of universal gate operations for the singlet-triplet qubit realized by two-electron spins in a double quantum dot, in the presence of a fixed inhomogeneous magnetic field. All gate operations are achieved by switching the potential offset between the two dots with an electrical bias, and do not require time-dependent control of the tunnel coupling between the dots. We analyze the two-electron dynamics and calculate the effective qubit rotation angle as a function of the applied electric bias. We present explicit gate sequences for single-qubit rotations about two orthogonal axes, and a CNOT gate sequence, completing the universal gate set.

Full configuration interaction approach to the few-electron problem in artificial atoms

We present a new high performance configuration interaction code optimally designed for the calculation of the lowest-energy eigenstates of a few electrons in semiconductor quantum dots (also called artificial atoms) in the strong interaction regime. The implementation relies on a single-particle representation, but it is independent of the choice of the single-particle basis and, therefore, of the details of the device and configuration of external fields. Assuming no truncation of the Fock space of Slater determinants generated from the chosen single-particle basis, the code may tackle regimes where Coulomb interaction very effectively mixes many determinants. Typical strongly correlated systems lead to very large diagonalization problems; in our implementation, the secular equation is reduced to its minimal rank by exploiting the symmetry of the effective-mass interacting Hamiltonian, including square total spin. The resulting Hamiltonian is diagonalized via parallel implementation of the Lanczos algorithm. The code gives access to both wave functions and energies of first excited states. Excellent code scalability in a parallel environment is demonstrated; accuracy is tested for the case of up to eight electrons confined in a two-dimensional harmonic trap as the density is progressively diluted up to the Wigner regime, where correlations become dominant. Comparison with previous quantum Monte Carlo simulations in the Wigner regime demonstrates power and flexibility of the method.