Evidence of correlation in spin excitations of few-electron quantum dots

Direct quantitative electrical measurement of many-body interactions in exciton complexes in InAs quantum dots

We present capacitance-voltage spectra for the conduction band states of InAs quantum dots obtained under continuous illumination. The illumination leads to the appearance of additional charging peaks that we attribute to the charging of electrons into quantum dots containing a variable number of illumination-induced holes. By this we demonstrate an electrical measurement of excitonic states in quantum dots. Magnetocapacitance-voltage spectroscopy reveals that the electron always tunnels into the lowest electronic state. This allows us to directly extract, from the highly correlated many-body states, the correlation energy. The results are compared quantitatively to state of the art atomistic configuration interaction calculations, showing very good agreement for a lower level of excitations and also limitations of the approach for an increasing number of particles. Our experiments offer a rare benchmark to many-body theoretical calculations.

Electron-electron interactions in artificial graphene

Recent advances in the creation and modulation of graphenelike systems are introducing a science of "designer Dirac materials". In its original definition, artificial graphene is a man-made nanostructure that consists of identical potential wells (quantum dots) arranged in an adjustable honeycomb lattice in the two-dimensional electron gas. As our ability to control the quality of artificial graphene samples improves, so grows the need for an accurate theory of its electronic properties, including the effects of electron-electron interactions. Here we determine those effects on the band structure and on the emergence of Dirac points.

Correlated electrons in optically tunable quantum dots: building an electron dimer molecule

We observe the low-lying excitations of a molecular dimer formed by two electrons in a GaAs semiconductor quantum dot in which the number of confined electrons is tuned by optical illumination. By employing inelastic light scattering we identify the intershell excitations in the one-electron regime and the distinct spin and charge modes in the interacting few-body configuration. In the case of two electrons, a comparison with configuration-interaction calculations allows us to link the observed excitations with the breathing mode of the molecular dimer and to determine the singlet-triplet energy splitting.

Long lifetimes of quantum-dot intersublevel transitions in the terahertz range

Carrier relaxation is a key issue in determining the efficiency of semiconductor optoelectronic device operation. Devices incorporating semiconductor quantum dots have the potential to overcome many of the limitations of quantum-well-based devices because of the predicted long quantum-dot excited-state lifetimes. For example, the population inversion required for terahertz laser operation in quantum-well-based devices (quantum-cascade lasers) is fundamentally limited by efficient scattering between the laser levels, which form a continuum in the plane of the quantum well. In this context, semiconductor quantum dots are a highly attractive alternative for terahertz devices, because of their intrinsic discrete energy levels. Here, we present the first measurements, and theoretical description, of the intersublevel carrier relaxation in quantum dots for transition energies in the few terahertz range. Long intradot relaxation times (1.5 ns) are found for level separations of 14 meV (3.4 THz), decreasing very strongly to approximately 2 ps at 30 meV (7 THz), in very good agreement with our microscopic theory of the carrier relaxation process. Our studies pave the way for quantum-dot terahertz device development, providing the fundamental knowledge of carrier relaxation times required for optimum device design.

Resonant Raman transitions into singlet and triplet states in InGaAs quantum dots containing two electrons

Semiconductor quantum dots containing two electrons, also called artificial quantum-dot helium atoms, are model structures to investigate the most fundamental many-particle states induced by Coulomb interaction and the Pauli exclusion principle. Here, electronic excitations in quantum-dot helium are investigated by resonant Raman spectroscopy in magnetic fields. We observe transitions from the ground state into the excited singlet state and, in the depolarized Raman configuration which allows spin-flip processes, into the triplet state.

Quantum decoherence reduction by increasing the thermal bath temperature

The well-known increase of the decoherence rate with the temperature, for a quantum system coupled to a linear thermal bath, no longer holds for a different bath dynamics. This is shown by means of a simple classical nonlinear bath, as well as a quantum spin-boson model. The anomalous effect is due to the temperature dependence of the bath spectral profile. In the case of the second model, a link with the quantum Zeno effect is provided. The decoherence reduction via the temperature increase can be relevant for the design of quantum computers.

Optical control of energy-level structure of few electrons in AlGaAs/GaAs quantum dots

Optical control of the lateral quantum confinement and number of electrons confined in nanofabricated GaAs/AlGaAs quantum dots is achieved by illumination with a weak laser beam that is absorbed in the AlGaAs barrier. Precise tuning of energy-level structure and electron population is demonstrated by monitoring the low-lying transitions of the electrons from the lowest quantum-dot energy shells by resonant inelastic light scattering. These findings open the way to the manipulation of single electrons in these quantum dots without the need of external metallic gates.

Correlation effects in wave function mapping of molecular beam epitaxy grown quantum dots

We investigate correlation effects in the regime of a few electrons in uncapped InAs quantum dots by tunneling spectroscopy and wave function (WF) mapping at high tunneling currents where electron-electron interactions become relevant. Four clearly resolved states are found, whose approximate symmetries are roughly s and p, in order of increasing energy. Because the major axes of the p-like states coincide, the WF sequence is inconsistent with the imaging of independent-electron orbitals. The results are explained in terms of many-body tunneling theory, by comparing measured maps with those calculated by taking correlation effects into account.

Friedel sum rule for an interacting multiorbital quantum dot

A generalized Friedel sum rule is derived for a quantum dot with internal orbital and spin degrees of freedom. The result is valid when all many-body correlations are taken into account and it links the phase shift of the scattered electron to the displacement of its spectral density into the dot.

Full configuration interaction approach to the few-electron problem in artificial atoms

We present a new high performance configuration interaction code optimally designed for the calculation of the lowest-energy eigenstates of a few electrons in semiconductor quantum dots (also called artificial atoms) in the strong interaction regime. The implementation relies on a single-particle representation, but it is independent of the choice of the single-particle basis and, therefore, of the details of the device and configuration of external fields. Assuming no truncation of the Fock space of Slater determinants generated from the chosen single-particle basis, the code may tackle regimes where Coulomb interaction very effectively mixes many determinants. Typical strongly correlated systems lead to very large diagonalization problems; in our implementation, the secular equation is reduced to its minimal rank by exploiting the symmetry of the effective-mass interacting Hamiltonian, including square total spin. The resulting Hamiltonian is diagonalized via parallel implementation of the Lanczos algorithm. The code gives access to both wave functions and energies of first excited states. Excellent code scalability in a parallel environment is demonstrated; accuracy is tested for the case of up to eight electrons confined in a two-dimensional harmonic trap as the density is progressively diluted up to the Wigner regime, where correlations become dominant. Comparison with previous quantum Monte Carlo simulations in the Wigner regime demonstrates power and flexibility of the method.