Spin proximity effect in ultrathin superconducting Be-Au bilayers

Intrinsic Coherence Length Anisotropy in Nickelates and Some Iron-Based Superconductors

Nickelate superconductors, R_1-xA_xNiO₂ (where R is a rare earth metal and A = Sr, Ca), experimentally discovered in 2019, exhibit many unexplained mysteries, such as the existence of a superconducting state with T_c (up to 18 K) in thin films and yet absent in bulk materials. Another unexplained mystery of nickelates is their temperature-dependent upper critical field, Bc2(T), which can be nicely fitted to two-dimensional (2D) models; however, the deduced film thickness, dsc,GL, exceeds the physical film thickness, dsc, by a manifold. To address the latter, it should be noted that 2D models assume that dsc is less than the in-plane and out-of-plane ground-state coherence lengths, dsc<ξab(0) and dsc<ξc(0), respectively, and, in addition, that the inequality ξc(0)<ξab(0) satisfies. Analysis of the reported experimental Bc2(T) data showed that at least one of these conditions does not satisfy for R_1-xA_xNiO₂ films. This implies that nickelate films are not 2D superconductors, despite the superconducting state being observed only in thin films. Based on this, here we propose an analytical three-dimensional (3D) model for a global data fit of in-plane and out-of-plane Bc2(T) in nickelates. The model is based on a heuristic expression for temperature-dependent coherence length anisotropy: γξ(T)=γξ(0)1-1a×TTc, where a>1 is a unitless free-fitting parameter. The proposed expression for γξ(T), perhaps, has a much broader application because it has been successfully applied to bulk pnictide and chalcogenide superconductors.

Spin-Mixing Enhanced Proximity Effect in Aluminum-Based Superconductor-Semiconductor Hybrids

In superconducting quantum circuits, aluminum is one of the most widely used materials. It is currently also the superconductor of choice for the development of topological qubits. However, aluminum-based devices suffer from poor magnetic field compatibility. Herein, this limitation is resolved by showing that adatoms of heavy elements (e.g., platinum) increase the critical field of thin aluminum films by more than a factor of two. Using tunnel junctions, it is shown that the increased field resilience originates from spin-orbit scattering introduced by Pt. This property is exploited in the context of the superconducting proximity effect in semiconductor-superconductor hybrids, where it is shown that InSb nanowires strongly coupled to Al/Pt films can maintain superconductivity up to 7 T. The two-electron charging effect is shown to be robust against the presence of heavy adatoms. Additionally, non-local spectroscopy is used in a three-terminal geometry to probe the bulk of hybrid devices, showing that it remains free of sub-gap states. Finally, it is demonstrated that proximitized semiconductor states maintain their ability to Zeeman-split in an applied magnetic field. Combined with the chemical stability and well-known fabrication routes of aluminum, Al/Pt emerges as the natural successor to Al-based systems and is a compelling alternative to other superconductors, whenever high-field resilience is required.

High Phase Purity of Large-Sized 1T'-MoS2 Monolayers with 2D Superconductivity

The development of transition metal dichalcogenides has greatly accelerated research in the 2D realm, especially for layered MoS₂ . Crucially, the metallic MoS₂ monolayer is an ideal platform in which novel topological electronic states can emerge and also exhibits excellent energy conversion and storage properties. However, as its intrinsic metallic phase, little is known about the nature of 2D 1T'-MoS₂ , probably because of limited phase uniformity (<80%) and lateral size (usually <1 µm) in produced materials. Herein, solution processing to realize high phase-purity 1T'-MoS₂ monolayers with large lateral size is demonstrated. Direct chemical exfoliation of millimeter-sized 1T' crystal is introduced to successfully produce a high-yield of 1T'-MoS₂ monolayers with over 97% phase purity and unprecedentedly large size up to tens of micrometers. Furthermore, the large-sized and high-quality 1T'-MoS₂ nanosheets exhibit clear intrinsic superconductivity among all thicknesses down to monolayer, accompanied by a slow drop of transition temperature from 6.1 to 3.0 K. Prominently, unconventional superconducting behavior with upper critical field far beyond the Pauli limit is observed in the centrosymmetric 1T'-MoS₂ structure. The results open up an ideal approach to explore the properties of 2D metastable polymorphic materials.

Superconducting Tunneling Spectroscopy of Spin-Orbit Coupling and Orbital Depairing in Nb:SrTiO_{3}

We have examined the intrinsic spin-orbit coupling and orbital depairing in thin films of Nb-doped SrTiO_{3} by superconducting tunneling spectroscopy. The orbital depairing is geometrically suppressed in the two-dimensional limit, enabling a quantitative evaluation of the Fermi level spin-orbit scattering using Maki's theory. The response of the superconducting gap under in-plane magnetic fields demonstrates short spin-orbit scattering times τ_{so}≤1.1  ps. Analysis of the orbital depairing indicates that the heavy electron band contributes significantly to pairing. These results suggest that the intrinsic spin-orbit scattering time in SrTiO_{3} is comparable to those associated with Rashba effects in SrTiO_{3} interfacial conducting layers and can be considered significant in all forms of superconductivity in SrTiO_{3}.

Electrostatic tuning of the proximity-induced exchange field in EuS/Al bilayers

We demonstrate that the proximity-induced exchange field H(ex) in ferromagnetic-paramagnetic bilayers can be modulated with an electric field. An electrostatic gate arrangement is used to tune the magnitude of H(ex) in the Al component of EuS/Al bilayers. In samples with H(ex)~2 T, we were able to produce modulations of ±10 mT with the application of perpendicular electric fields of the order of ±10(6) V/cm. We discuss several possible mechanisms accounting for the electric field's influence on the interfacial coupling between the Al layer and the ferromagnetic insulator EuS, along with the prospects of producing a superconducting field-effect transistor.