Sub-Poissonian shot noise in graphene

Sub-Sharvin Conductance and Incoherent Shot-Noise in Graphene Disks at Magnetic Field

Highly doped graphene samples show reduced conductance and enhanced shot-noise power compared with standard ballistic systems in two-dimensional electron gas. These features can be understood within a model that assumes incoherent scattering of Dirac electrons between two interfaces separating the sample and the leads. Here we find, by adopting the above model for the edge-free (Corbino) geometry and by computer simulation of quantum transport, that another graphene-specific feature should be observable when the current flow through a doped disk is blocked by a strong magnetic field. When the conductance drops to zero, the Fano factor approaches the value of F≈0.56, with a very weak dependence on the ratio of the disk radii. The role of finite source-drain voltages and the system behavior when the electrostatic potential barrier is tuned from a rectangular to a parabolic shape are also discussed.

Mechanical Control of Quantum Transport in Graphene

2D materials (2DMs) are fundamentally electro-mechanical systems. Their environment unavoidably strains them and modifies their quantum transport properties. For instance, a simple uniaxial strain can completely turn off the conductance of ballistic graphene or switch on/off the superconducting phase of magic-angle bilayer graphene. This article reports measurements of quantum transport in strained graphene transistors which agree quantitatively with models based on mechanically-induced gauge potentials. A scalar potential is mechanically induced in situ to modify graphene's work function by up to 25 meV. Mechanically generated vector potentials suppress the ballistic conductance of graphene by up to 30% and control its quantum interferences. The data are measured with a custom experimental platform able to precisely tune both the mechanics and electrostatics of suspended graphene transistors at low-temperature over a broad range of strain (up to 2.6%). This work opens many opportunities to harness quantitative strain effects in 2DM quantum transport and technologies.

Quantum Transport in Large-Scale Patterned Nitrogen-Doped Graphene

It has recently been demonstrated how the nitrogen dopant concentration in graphene can be controlled spatially on the nano-meter scale using a molecular mask. This technique may be used to create ballistic electron optics-like structures of high/low doping regions; for example, to focus electron beams, harnessing the quantum wave nature of the electronic propagation. Here, we employ large-scale Greens function transport calculations based on a tight-binding approach. We first benchmark different tight-binding models of nitrogen in graphene with parameters based on density functional theory (DFT) and the virtual crystal approximation (VCA). Then, we study theoretically how the random distribution within the masked regions and the discreteness of the nitrogen scattering centers impact the transport behavior of sharp n-p and n-n' interfaces formed by different, realistic nitrogen concentrations. We investigate how constrictions for the current can be realized by patterned high/low doping regions with experimentally feasible nitrogen concentrations. The constrictions can guide the electronic current, while the quantized conductance is significantly washed out due to the nitrogen scattering. The implications for device design is that a p-n junction with nitrogen corrugation should still be viable for current focusing. Furthermore, a guiding channel with less nitrogen in the conducting canal preserves more features of quantized conductance and, therefore, its low-noise regime.

Zeeman Field-Induced Two-Dimensional Weyl Semimetal Phase in Cadmium Arsenide

We report a topological phase transition in quantum-confined cadmium arsenide (Cd_{3}As_{2}) thin films under an in-plane Zeeman field when the Fermi level is tuned into the topological gap via an electric field. Symmetry considerations in this case predict the appearance of a two-dimensional Weyl semimetal (2D WSM), with a pair of Weyl nodes of opposite chirality at charge neutrality that are protected by space-time inversion (C_{2}T) symmetry. We show that the 2D WSM phase displays unique transport signatures, including saturated resistivities on the order of h/e^{2} that persist over a range of in-plane magnetic fields. Moreover, applying a small out-of-plane magnetic field, while keeping the in-plane field within the stability range of the 2D WSM phase, gives rise to a well-developed odd integer quantum Hall effect, characteristic of degenerate, massive Weyl fermions. A minimal four-band k·p model of Cd_{3}As_{2}, which incorporates first-principles effective g factors, qualitatively explains our findings.

Self-Powered Photodetector with High Efficiency and Polarization Sensitivity Enabled by WSe2/Ta2NiSe5/WSe2 van der Waals Dual Heterojunction

Self-powered photodetectors have triggered widespread attention because of the requirement of Internet of Things (IoT) application and low power consumption. However, it is challenging to simultaneously implement miniaturization, high quantum efficiency, and multifunctionalization. Here, we report a high-efficiency and polarization-sensitive photodetector enabled by two-dimensional (2D) WSe₂/Ta₂NiSe₅/WSe₂ van der Waals (vdW) dual heterojunctions (DHJ) along with a sandwich-like electrode pair. On account of enhanced light collection efficiency and two opposite built-in electric fields at the hetero-interfaces, the DHJ device achieves not only a broadband spectral response of 400-1550 nm but outstanding performance under 635 nm light illumination including an ultrahigh external quantum efficiency (EQE) of 85.5%, a pronounced power conversion efficiency (PCE) of 1.9%, and a fast response speed of 420/640 μs, which is much better than that of the WSe₂/Ta₂NiSe₅ single heterojunction (SHJ). Significantly, based on the strong in-plane anisotropy of 2D Ta₂NiSe₅ nanosheets, the DHJ device shows competitive polarization sensitivities of 13.9 and 14.8 under 635 and 808 nm light, respectively. Furthermore, an excellent self-powered visible imaging capability based on the DHJ device is demonstrated. These results pave a promising platform for realizing self-powered photodetectors with high performance and multifunctionality.

CO2 adsorption enhancement and charge transfer characteristics for composite graphene doped with atoms at defect sites

CONTEXT

The massive emission of carbon dioxide in the world causes global warming and a series of increasingly serious ecological problems. It is urgent to find efficient adsorbent for large-scale CO₂ capture. Graphene as a solid adsorbent has exhibited great potential and development prospects in gas adsorption. Doping atoms at defect sites in composite graphene is considered as one of the promising approaches to enhance the gas adsorption ability. Nevertheless, composite graphene doping with different atoms has not been explored to a large extent so far.

METHODS

In this work, vacancy graphenes with single C-vacancy (VI-G) and with double C-vacancies (VII-G) are doped with nitrogen atoms and metal atoms M (M = Co, Mo, Mn, Fe) to form composite configurations. The Perdew-Burke-Ernzerho (PBE) functional is used under the generalized gradient approximation (GGA) basis set. A comprehensive study of the adsorption effect and charge transfer characteristics of CO₂ molecule on different composite graphene configurations is carried out through DFT calculation. By analyzing the adsorption energy, adsorption distance, energy band structure, and atomic Mulliken population, it is found that the composite graphene doped with metal atoms such as Co-3N-VI, Mo-3N-VI, Mn-3N-VI, Fe-3N-VI, and Mo-4N-VII significantly enhanced the CO₂ adsorption. Further analysis of charge density and density of states (DOS) demonstrates that CO₂ adsorption on M-3N-VI and M-4N-VII reached the same conclusion. Thus, it is concluded that appropriate metal atoms can enhance the adsorption characteristics.

Transport Simulation of Graphene Devices with a Generic Potential in the Presence of an Orthogonal Magnetic Field

The effect of an orthogonal magnetic field is introduced into a numerical simulator, based on the solution of the Dirac equation in the reciprocal space, for the study of transport in graphene devices consisting of armchair ribbons with a generic potential. Different approaches are proposed to reach this aim. Their efficiency and range of applicability are compared, with particular focus on the requirements in terms of model setup and on the possible numerical issues that may arise. Then, the extended code is successfully validated, simulating several interesting magnetic-related phenomena in graphene devices, including magnetic-field-induced energy-gap modulation, coherent electron focusing, and Aharonov-Bohm interference effects.

A Polarization-Sensitive Self-Powered Photodetector Based on a p-WSe2/TaIrTe4/n-MoS2 van der Waals Heterojunction

Polarization-sensitive photodetection is highly appealing considering its great important applications. However, the inherent in-plane symmetry of a material and the single structure of a detector hinder the further development of polarization detectors with high anisotropic ratios. Herein, we design a p-WSe₂/TaIrTe₄/n-MoS₂ (p-Ta-n) heterojunction. As a type-II Weyl semimetal, TaIrTe₄ with an orthorhombic structure has strong in-plane asymmetry, which is confirmed by angle-resolved polarized Raman spectroscopy and second-harmonic generation. Due to the specific structure of the p-Ta-n junction with two vertical built-in electric fields, the device obtains a broadband self-powered photodetection ranging from visible (405 nm) to telecommunication wavelength (1550 nm) regions. Further, an optimized device containing 50-70 nm-thick layered TaIrTe₄ has been realized. What is more, high-resolution imaging of "T" based on the device with clear borders illustrates excellent stability of the device. Significantly, the photocurrent anisotropic ratio of the p-Ta-n detector can reach 9.1 under 635 nm light, which is more than eight times that of the best known TaIrTe₄-based photodetector reported before. This p-Ta-n junction containing a type-II Weyl fermion semimetal can provide an effective approach toward highly polarization-sensitive and high-performance integrated broadband photodetectors.

Weyl Semimetal Path to Valley Filtering in Graphene

We propose a device in which a sheet of graphene is coupled to a Weyl semimetal, allowing for the physical access to the study of tunneling from two- to three-dimensional massless Dirac fermions. Because of the reconstructed band structure, we find that this device acts as a robust valley filter for electrons in the graphene sheet. We show that, by appropriate alignment, the Weyl semimetal draws away current in one of the two graphene valleys, while allowing current in the other to pass unimpeded. In contrast to other proposed valley filters, the mechanism of our proposed device occurs in the bulk of the graphene sheet, obviating the need for carefully shaped edges or dimensions.

Transmission properties of microwaves at an optical Weyl point in a three-dimensional chiral photonic crystal

Microwave transmission measurements were performed for a three-dimensional (3D) layer-by-layer chiral photonic crystal (PhC), whose photonic band structure contains 3D singular points, Weyl points. For the frequency and wavevector in the vicinity of a Weyl point, the transmitted intensity was found to be inversely proportional to the square of the propagation length. In addition, the transmitted wave was well-collimated in the plane parallel to the PhC layers, even for point-source incidence. When a plane wave was incident on the PhC containing metal scatters, the planar wavefront was reconstructed after the transmission, indicating a cloaking effect.

Wiedemann-Franz Law for Massless Dirac Fermions with Implications for Graphene

In the 2016 experiment by Crossno et al. the electronic contribution to the thermal conductivity of graphene was found to violate the well-known Wiedemann-Franz (WF) law for metals. At liquid nitrogen temperatures, the thermal to electrical conductivity ratio of charge-neutral samples was more than 10 times higher than predicted by the WF law, which was attributed to interactions between particles leading to collective behavior described by hydrodynamics. Here, we show, by adapting the handbook derivation of the WF law to the case of massless Dirac fermions, that significantly enhanced thermal conductivity should appear also in few- or even sub-kelvin temperatures, where the role of interactions can be neglected. The comparison with numerical results obtained within the Landauer-Büttiker formalism for rectangular and disk-shaped (Corbino) devices in ballistic graphene is also provided.

Criticality of Two-Dimensional Disordered Dirac Fermions in the Unitary Class and Universality of the Integer Quantum Hall Transition

Two-dimensional (2D) Dirac fermions are a central paradigm of modern condensed matter physics, describing low-energy excitations in graphene, in certain classes of superconductors, and on surfaces of 3D topological insulators. At zero energy E=0, Dirac fermions with mass m are band insulators, with the Chern number jumping by unity at m=0. This observation lead Ludwig et al. [Phys. Rev. B 50, 7526 (1994)PRBMDO0163-182910.1103/PhysRevB.50.7526] to conjecture that the transition in 2D disordered Dirac fermions (DDF) and the integer quantum Hall transition (IQHT) are controlled by the same fixed point and possess the same universal critical properties. Given the far-reaching implications for the emerging field of the quantum anomalous Hall effect, modern condensed matter physics, and our general understanding of disordered critical points, it is surprising that this conjecture has never been tested numerically. Here, we report the results of extensive numerics on the phase diagram and criticality of 2D DDF in the unitary class. We find a critical line at m=0, with an energy-dependent localization length exponent. At large energies, our results for the DDF are consistent with state-of-the-art numerical results ν_{IQH}=2.56-2.62 from models of the IQHT. At E=0, however, we obtain ν_{0}=2.30-2.36 incompatible with ν_{IQH}. This result challenges conjectured relations between different models of the IQHT, and several interpretations are discussed.

Effects of A Magnetic Field on the Transport and Noise Properties of a Graphene Ribbon with Antidots

We perform a numerical simulation of the effects of an orthogonal magnetic field on charge transport and shot noise in an armchair graphene ribbon with a lattice of antidots. This study relies on our envelope-function based code, in which the presence of antidots is simulated through a nonzero mass term and the magnetic field is introduced with a proper choice of gauge for the vector potential. We observe that by increasing the magnetic field, the energy gap present with no magnetic field progressively disappears, together with features related to commensurability and quantum effects. In particular, we focus on the behavior for high values of the magnetic field: we notice that when it is sufficiently large, the effect of the antidots vanishes and shot noise disappears, as a consequence of the formation of edge states crawling along the boundaries of the structure without experiencing any interaction with the antidots.

Step-like conductance of a silicene pseudospin junction

A step-like conductance as a function of the Fermi energy is theoretically predicted for a junction made of silicene, in which the energy gap in the junction can be controlled by a perpendicular electric field. When the electric field is applied at the central area of the junction, the transmission probability of an electron becomes partially suppressed and the calculated conductance behaves a step-like function of the Fermi energy. Origins of the step-like conductance are (1) formation of a standing-wave of electron, (2) changing number of transport channels and (3) a rotation of out-of-plane pseudospin of the electron in silicene. We analytically show that the transmission probability of the electron through the junction depends on the direction of the pseudospin, in which the large rotation results in a vanishing conductance. When we switch-off the electric field, on the other hand, the pseudospin does not change the direction, which gives a finite conductance. Thus a switching device can be realized in the silicene pseudospin junction.

Pseudo chiral anomaly in zigzag graphene ribbons

As the three-dimensional analogs of graphene, Weyl semimetals display signatures of chiral anomaly which arises from charge pumping between the lowest chiral Landau levels of the Weyl nodes in the presence of parallel electric and magnetic fields. In this work, we study the pseudo chiral anomaly and its transport signatures in graphene ribbon with zigzag edges. Here 'pseudo' refers to the case where the inverse of width of zigzag graphene ribbon plays the same role as magnetic field in three-dimensional Weyl semimetals. The valley chiral bands in zigzag graphene ribbons can be introduced by edge potentials, giving rise to the nonconservation of chiral current, i.e. pseudo chiral anomaly, in the presence of a longitudinal electric field. Further numerical results reveal that pseudo magnetoconductivity of zigzag graphene ribbons is positive and has a nearly quadratic dependence on the pseudofield, which is regarded as the transport signature of pseudo chiral anomaly.

Spin, orbital and topological order in models of strongly correlated electrons

Different types of order are discussed in the context of strongly correlated transition metal oxides, involving pure compounds and [Formula: see text] and [Formula: see text] hybrids. Apart from standard, long-range spin and orbital orders we observe also exotic noncollinear spin patterns. Such patters can arise in presence of atomic spin-orbit coupling, which is a typical case, or due to spin-orbital entanglement at the bonds in its absence, being much less trivial. Within a special interacting one-dimensional spin-orbital model it is also possible to find a rigorous topological magnetic order in a gapless phase that goes beyond any classification tables of topological states of matter. This is an exotic example of a strongly correlated topological state. Finally, in the less correlated limit of 4d ⁴ oxides, when orbital selective Mott localization can occur it is possible to stabilize by a 3d ³ doping one-dimensional zigzag antiferromagnetic phases. Such phases have exhibit nonsymmorphic spatial symmetries that can lead to various topological phenomena, like single and multiple Dirac points that can turn into nodal rings or multiple topological charges protecting single Dirac points. Finally, by creating a one-dimensional [Formula: see text] hybrid system that involves orbital pairing terms, it is possible to obtain an insulating spin-orbital model where the orbital part after fermionization maps to a non-uniform Kitaev model. Such model is proved to have topological phases in a wide parameter range even in the case of completely disordered 3d ² impurities. What more, it exhibits hidden Lorentz-like symmetries of the topological phase, that live in the parameters space of the model.

Dry transfer method for suspended graphene on lift-off-resist: simple ballistic devices with Fabry-Pérot interference

We demonstrate a fabrication scheme for clean suspended structures using chemical-vapor-deposition-grown graphene and a dry transfer method on lift-off-resist-coated substrates to facilitate suspended graphene nanoelectronic devices for technological applications. It encompasses the demands for scalable fabrication as well as for ultra-fast response due to weak coupling to environment. The fabricated devices exhibited initially a weak field-effect response with substantial positive (p) doping which transformed into weak negative (n) doping upon current annealing at the temperature of 4 K. With increased annealing current, n-doping gradually decreased while the Dirac peak position approached zero in gate voltage. An ultra-low residual charge density of 9 × 10⁸ cm^-2 and a mobility of 1.9 × 10⁵ cm² V^-1 s^-1 were observed. Our samples display clear Fabry-Pérot (FP) conductance oscillation which indicates ballistic electron transport. The spacings of the FP oscillations are found to depend on the charge density in a manner that agrees with theoretical modeling based on Klein tunneling of Dirac particles. The ultra-low residual charge, the FP oscillations with density dependent period, and the high mobility prove the excellent quality of our suspended graphene devices. Owing to its simplicity, scalability and robustness, this fabrication scheme enhances possibilities for production of suspended, high-quality, two-dimensional-material structures for novel electronic applications.

Quantum Pumping with Adiabatically Modulated Barriers in Three-Band Pseudospin-1 Dirac-Weyl Systems

In this work, pumped currents of the adiabatically-driven double-barrier structure based on the pseudospin-1 Dirac–Weyl fermions are studied. As a result of the three-band dispersion and hence the unique properties of pseudospin-1 Dirac–Weyl quasiparticles, sharp current-direction reversal is found at certain parameter settings especially at the Dirac point of the band structure, where apexes of the two cones touch at the flat band. Such a behavior can be interpreted consistently by the Berry phase of the scattering matrix and the classical turnstile mechanism.

Shot noise in electrically-gated silicene nanostructures

We have theoretically studied fundamental shot noise properties in single- and dual-gated silicene nanostructures. It is demonstrated here that due to the intrinsic spin-orbit gap, the Fano factor ( F ) in the biased structures does not coincide with the characteristic value F  = 1/3, a value frequently reported for a graphene system. Under gate-field modulations, the F in the gated structure can be efficiently engineered and the specific evolution of the F versus the field strength is symmetric with the center of spectra oppositely shifting away from the zero field condition for the valley or spin-coupled spinor states. This field-dependent hysteretic loop thus offers some flexible methods to distinguish one spinor state from its valley or spin-coupled state via their numerical difference in the F once the incident beam is spin or valley-polarized.

Sticking of atomic hydrogen on graphene

Recent years have witnessed an ever growing interest in the interactions between hydrogen atoms and a graphene sheet. Largely motivated by the possibility of modulating the electric, optical and magnetic properties of graphene, a huge number of studies have appeared recently that added to and enlarged earlier investigations on graphite and other carbon materials. In this review we give a glimpse of the many facets of this adsorption process, as they emerged from these studies. The focus is on those issues that have been addressed in detail, under carefully controlled conditions, with an emphasis on the interplay between the adatom structures, their formation dynamics and the electric, magnetic and chemical properties of the carbon sheet.

Extracting the Energy Sensitivity of Charge Carrier Transport and Scattering

It is a challenge to extract the energy sensitivity of charge carriers' transport and scattering from experimental data, although a theoretical estimation in which the existing scattering mechanism(s) are preliminarily assumed can be easily done. To tackle this problem, we have developed a method to experimentally determine the energy sensitivities, which can then serve as an important statistical measurement to further understand the collective behaviors of multi-carrier transport systems. This method is validated using a graphene system at different temperatures. Further, we demonstrate the application of this method to other two-dimensional (2D) materials as a guide for future experimental work on the optimization of materials performance for electronic components, Peltier coolers, thermoelectricity generators, thermocouples, thermopiles, electrical converters and other conductivity and/or Seebeck-effect-related sensors.

Proximity coupling in superconductor-graphene heterostructures

This review discusses the electronic properties and the prospective research directions of superconductor-graphene heterostructures. The basic electronic properties of graphene are introduced to highlight the unique possibility of combining two seemingly unrelated physics, superconductivity and relativity. We then focus on graphene-based Josephson junctions, one of the most versatile superconducting quantum devices. The various theoretical methods that have been developed to describe graphene Josephson junctions are examined, together with their advantages and limitations, followed by a discussion on the advances in device fabrication and the relevant length scales. The phase-sensitive properties and phase-particle dynamics of graphene Josephson junctions are examined to provide an understanding of the underlying mechanisms of Josephson coupling via graphene. Thereafter, microscopic transport of correlated quasiparticles produced by Andreev reflections at superconducting interfaces and their phase-coherent behaviors are discussed. Quantum phase transitions studied with graphene as an electrostatically tunable 2D platform are reviewed. The interplay between proximity-induced superconductivity and the quantum-Hall phase is discussed as a possible route to study topological superconductivity and non-Abelian physics. Finally, a brief summary on the prospective future research directions is given.

Axonal Channel Capacity in Neuro-Spike Communication

Novel nano-scale communication techniques are inspired by biological systems. Neuro-spike communication is an example of this communication paradigm which transfers vital information about external and internal conditions of the body through the nervous system. The analysis of this communication paradigm is beneficial to exploit in the artificial neural systems where nano-machines are linked to neurons to treat the neurodegenerative diseases. In these networks, nano-machines are used to replace the damaged segments of the nervous system and they exactly behave like biological entities. In neuro-spike communication, neurons / nano-machines exploit the electro-chemical spikes and molecular communication to transfer information. This communication paradigm can be divided into three main parts, namely the axonal pathway, the synaptic transmission, and the spike generation. In this paper, we focus on the axonal transmission part as a separate channel since the capacity of the axonal pathway has a significant effect on the capacity of neuro-spike communication channel. In thinner axons, the capacity of this part is the bottleneck of the neuro-spike communication channel capacity. Hence, we investigate the restricting factors of the axonal transmission which limit its capacity. We derive the capacity of single-input single-output and multiple-input single-output (MISO) axonal channels. In the MISO case, we investigate the effect of the correlation among inputs on the channel capacity. Moreover, we derive a closed form description for the optimum value of the input spike rate to maximize the capacity of the axonal channel when the information is encoded by firing rate of neurons / nano-machines.

Electronic transport property in Weyl semimetal with local Weyl cone tilt

In realistic materials of Weyl semimetal (WSM), the Weyl cone tilt (WCT) is allowed due to the absence of Lorentz invariance in condensed matter physics. In this context, we theoretically study the electronic transport property in WSM with the local WCT as the scattering mechanism. In so doing, we establish an electronic transport structure of WSM with the WCT occurring only in the central region sandwiched between two pieces of semi-infinite WSM without the WCT. By means of two complementary theoretical approaches, i.e. the continuum-model method and the lattice-model method, the electronic transmission probability, the conductivity and the Fano factor as functions of the incident electron energy are calculated respectively. We find that the WCT can give rise to nontrivial intervalley scattering, as a result, the Klein tunneling is notably suppressed. More importantly, the minimal conductivity of a WSM shifts in energy from the Weyl nodal point. The Fano factor of the shot noise deviates obviously from the sub-Poissonian value in a two dimensional WSM with the WCT.

Shot noise and electronic properties in the inversion-symmetric Weyl semimetal resonant structure

Using the transfer matrix method, the authors combine the analytical formula with numerical calculation to explore the shot noise and conductance of massless Weyl fermions in the Weyl semimetal resonant junction. By varying the barrier strength, the structure of the junction, the Fermi energy, and the crystallographic angle, the shot noise and conductance can be tuned efficiently. For a quasiperiodic superlattice, in complete contrast to the conventional junction case, the effect of the disorder strength on the shot noise and conductance depends on the competition of classical tunneling and Klein tunneling. Moreover, the delta barrier structure is also vital in determining the shot noise and conductance. In particular, a universal Fano factor has been found in a single delta potential case, whereas the resonant structure of the Fano factor perfectly matches with the number of barriers in a delta potential superlattice. These results are crucial for engineering nanoelectronic devices based on this topological semimetal material.

Spin-selectable, region-tunable negative differential resistance in graphene double ferromagnetic barriers

We propose a negative differential resistance that adds a spin and a bias degree of freedom to the traditional one.

Anomalous Dirac point transport due to extended defects in bilayer graphene

Charge transport at the Dirac point in bilayer graphene exhibits two dramatically different transport states, insulating and metallic, that occur in apparently otherwise indistinguishable experimental samples. We demonstrate that the existence of these two transport states has its origin in an interplay between evanescent modes, that dominate charge transport near the Dirac point, and disordered configurations of extended defects in the form of partial dislocations. In a large ensemble of bilayer systems with randomly positioned partial dislocations, the distribution of conductivities is found to be strongly peaked at both the insulating and metallic limits. We argue that this distribution form, that occurs only at the Dirac point, lies at the heart of the observation of both metallic and insulating states in bilayer graphene.

In seemingly indistinguishable bilayer graphene samples, two distinct transport regimes, insulating and metallic, have been identified experimentally. Here, the authors demonstrate that these two states originate from the interplay between extended defects and evanescent modes at the Dirac point.

Weakly-coupled quasi-1D helical modes in disordered 3D topological insulator quantum wires

Disorder remains a key limitation in the search for robust signatures of topological superconductivity in condensed matter. Whereas clean semiconducting quantum wires gave promising results discussed in terms of Majorana bound states, disorder makes the interpretation more complex. Quantum wires of 3D topological insulators offer a serious alternative due to their perfectly-transmitted mode. An important aspect to consider is the mixing of quasi-1D surface modes due to the strong degree of disorder typical for such materials. Here, we reveal that the energy broadening γ of such modes is much smaller than their energy spacing Δ, an unusual result for highly-disordered mesoscopic nanostructures. This is evidenced by non-universal conductance fluctuations in highly-doped and disordered Bi2Se3 and Bi₂Te₃ nanowires. Theory shows that such a unique behavior is specific to spin-helical Dirac fermions with strong quantum confinement, which retain ballistic properties over an unusually large energy scale due to their spin texture. Our result confirms their potential to investigate topological superconductivity without ambiguity despite strong disorder.

Anomalous Anderson localization behaviors in disordered pseudospin systems

We discovered unique Anderson localization behaviors of pseudospin systems in a 1D disordered potential. For a pseudospin-1 system, due to the absence of backscattering under normal incidence and the presence of a conical band structure, the wave localization behaviors are entirely different from those of conventional disordered systems. We show that there exists a critical strength of random potential ([Formula: see text]), which is equal to the incident energy ([Formula: see text]), below which the localization length [Formula: see text] decreases with the random strength [Formula: see text] for a fixed incident angle [Formula: see text] But the localization length drops abruptly to a minimum at [Formula: see text] and rises immediately afterward. The incident angle dependence of the localization length has different asymptotic behaviors in the two regions of random strength, with [Formula: see text] when [Formula: see text] and [Formula: see text] when [Formula: see text] The existence of a sharp transition at [Formula: see text] is due to the emergence of evanescent waves in the systems when [Formula: see text] Such localization behavior is unique to pseudospin-1 systems. For pseudospin-1/2 systems, there is also a minimum localization length as randomness increases, but the transition from decreasing to increasing localization length at the minimum is smooth rather than abrupt. In both decreasing and increasing regions, the [Formula: see text] dependence of the localization length has the same asymptotic behavior [Formula: see text].

Surface phononic graphene

Strategic manipulation of wave and particle transport in various media is the key driving force for modern information processing and communication. In a strongly scattering medium, waves and particles exhibit versatile transport characteristics such as localization, tunnelling with exponential decay, ballistic, and diffusion behaviours due to dynamical multiple scattering from strong scatters or impurities. Recent investigations of graphene have offered a unique approach, from a quantum point of view, to design the dispersion of electrons on demand, enabling relativistic massless Dirac quasiparticles, and thus inducing low-loss transport either ballistically or diffusively. Here, we report an experimental demonstration of an artificial phononic graphene tailored for surface phonons on a LiNbO₃ integrated platform. The system exhibits Dirac quasiparticle-like transport, that is, pseudo-diffusion at the Dirac point, which gives rise to a thickness-independent temporal beating for transmitted pulses, an analogue of Zitterbewegung effects. The demonstrated fully integrated artificial phononic graphene platform here constitutes a step towards on-chip quantum simulators of graphene and unique monolithic electro-acoustic integrated circuits.

Strain controlled ferromagnetic-ferrimagnetic transition and vacancy formation energy of defective graphene

Single vacancy (SV)-induced magnetism in graphene has attracted much attention motivated by its potential in achieving new functionalities. However, a much higher vacancy formation energy limits its direct application in electronic devices and the dependency of spin interaction on the strain is unclear. Here, through first-principles density-functional theory calculations, we investigate the possibility of strain engineering towards lowering vacancy formation energy and inducing new magnetic states in defective graphene. It is found that the SV-graphene undergoes a phase transition from an initial ferromagnetic state to a ferrimagnetic state under a biaxial tensile strain. At the same time, the biaxial tensile strain significantly lowers the vacancy formation energy. The charge density, density of states and band theory successfully identify the origin and underlying physics of the transition. The predicted magnetic phase transition is attributed to the strain driven spin flipping at the C-atoms nearest to the SV-site. The magnetic semiconducting graphene induced by defect and strain engineering suggests an effective way to modulate both spin and electronic degrees of freedom in future spintronic devices.

Spin Hall Effect and Origins of Nonlocal Resistance in Adatom-Decorated Graphene

Recent experiments reporting an unexpectedly large spin Hall effect (SHE) in graphene decorated with adatoms have raised a fierce controversy. We apply numerically exact Kubo and Landauer-Büttiker formulas to realistic models of gold-decorated disordered graphene (including adatom clustering) to obtain the spin Hall conductivity and spin Hall angle, as well as the nonlocal resistance as a quantity accessible to experiments. Large spin Hall angles of ∼0.1 are obtained at zero temperature, but their dependence on adatom clustering differs from the predictions of semiclassical transport theories. Furthermore, we find multiple background contributions to the nonlocal resistance, some of which are unrelated to the SHE or any other spin-dependent origin, as well as a strong suppression of the SHE at room temperature. This motivates us to design a multiterminal graphene geometry which suppresses these background contributions and could, therefore, quantify the upper limit for spin-current generation in two-dimensional materials.

A proposed experimental diagnosing of specular Andreev reflection using the spin orbit interaction

Based on the Dirac-Bogoliubov-de Gennes equation, we theoretically investigate the chirality-resolved transport properties through a superconducting heterojunction in the presence of both the Rashba spin orbit interaction (RSOI) and the Dresselhaus spin orbit interaction (DSOI). Our results show that, if only the RSOI is present, the chirality-resolved Andreev tunneling conductance can be enhanced in the superconducting gap, while it always shows a suppression effect for the case of the DSOI alone. In contrast to the similar dependence of the specular Andreev zero bias tunneling conductance on the SOI, the retro-Andreev zero bias tunneling conductance exhibit the distinct dependence on the RSOI and the DSOI. Moreover, the zero-bias tunneling conductances for the retro-Andreev reflection (RAR) and the specular Andreev reflection (SAR) also show a qualitative difference with respect to the barrier parameters. When the RSOI and the DSOI are finite, three orders of magnitude enhancement of specular Andreev tunneling conductance is revealed. Furthermore, by analyzing the balanced SOI case, we find that the RAR is in favor of a parabolic dispersion, but a linear dispersion is highly desired for the SAR. These results shed light on the diagnosing of the SAR in graphene when subjected to both kinds of SOI.

Size quantization of Dirac fermions in graphene constrictions

Quantum point contacts are cornerstones of mesoscopic physics and central building blocks for quantum electronics. Although the Fermi wavelength in high-quality bulk graphene can be tuned up to hundreds of nanometres, the observation of quantum confinement of Dirac electrons in nanostructured graphene has proven surprisingly challenging. Here we show ballistic transport and quantized conductance of size-confined Dirac fermions in lithographically defined graphene constrictions. At high carrier densities, the observed conductance agrees excellently with the Landauer theory of ballistic transport without any adjustable parameter. Experimental data and simulations for the evolution of the conductance with magnetic field unambiguously confirm the identification of size quantization in the constriction. Close to the charge neutrality point, bias voltage spectroscopy reveals a renormalized Fermi velocity of ∼1.5 × 10(6) m s(-1) in our constrictions. Moreover, at low carrier density transport measurements allow probing the density of localized states at edges, thus offering a unique handle on edge physics in graphene devices.

Signatures of evanescent transport in ballistic suspended graphene-superconductor junctions

In Dirac materials, the low energy excitations behave like ultra-relativistic massless particles with linear energy dispersion. A particularly intriguing phenomenon arises with the intrinsic charge transport behavior at the Dirac point where the charge density approaches zero. In graphene, a 2-D Dirac fermion gas system, it was predicted that charge transport near the Dirac point is carried by evanescent modes, resulting in unconventional “pseudo-diffusive” charge transport even in the absence of disorder. In the past decade, experimental observation of this phenomenon remained challenging due to the presence of strong disorder in graphene devices which limits the accessibility of the low carrier density regime close enough to the Dirac point. Here we report transport measurements on ballistic suspended graphene-Niobium Josephson weak links that demonstrate a transition from ballistic to pseudo-diffusive like evanescent transport below a carrier density of ~10¹⁰ cm⁻². Approaching the Dirac point, the sub-harmonic gap structures due to multiple Andreev reflections display a strong Fermi energy-dependence and become increasingly pronounced, while the normalized excess current through the superconductor-graphene interface decreases sharply. Our observations are in qualitative agreement with the long standing theoretical prediction for the emergence of evanescent transport mediated pseudo-diffusive transport in graphene.

Conductance of graphene flakes contacted at their corners

Linear conductance of junctions formed by graphene flakes with the order of the nanometer-thick electrodes attached at the corners of the flakes is studied. The explored structures have sizes up to 20,000 atoms and the conductance is studied as a function of applied gate voltage varied around the Fermi level. The finding, obtained computationally, is that junctions formed by armchair-edge flakes with the electrodes connected at the acute-angle corners block the electron transport while only junctions with such electrodes at the obtuse-angle corners tend to provide the high electrical conductance typical for metallic GNRs. The finding in the case of zig-zag edges is similar with the exception of a relatively narrow gate voltage interval in which each studied junction is highly conductive as mediated by the edge states. The contrast between the conductive and insulating setups is typically several orders of magnitude in terms of ratio of their conductances. The main results of the paper also remain to a large extent valid in the presence of edge disorder.

Photon-Inhibited Topological Transport in Quantum Well Heterostructures

Here we provide a picture of transport in quantum well heterostructures with a periodic driving field in terms of a probabilistic occupation of the topologically protected edge states in the system. This is done by generalizing methods from the field of photon-assisted tunneling. We show that the time dependent field dresses the underlying Hamiltonian of the heterostructure and splits the system into sidebands. Each of these sidebands is occupied with a certain probability which depends on the drive frequency and strength. This leads to a reduction in the topological transport signatures of the system because of the probability to absorb or emit a photon. Therefore when the voltage is tuned to the bulk gap the conductance is smaller than the expected 2e(2)/h. We refer to this as photon-inhibited topological transport. Nevertheless, the edge modes reveal their topological origin in the robustness of the edge conductance to disorder and changes in model parameters. In this work the analogy with photon-assisted tunneling allows us to interpret the calculated conductivity and explain the sum rule observed by Kundu and Seradjeh.

Tailoring 10 nm scale suspended graphene junctions and quantum dots

The possibility to make 10 nm scale, and low-disorder, suspended graphene devices would open up many possibilities to study and make use of strongly coupled quantum electronics, quantum mechanics, and optics. We present a versatile method, based on the electromigration of gold-on-graphene bow-tie bridges, to fabricate low-disorder suspended graphene junctions and quantum dots with lengths ranging from 6 nm up to 55 nm. We control the length of the junctions, and shape of their gold contacts by adjusting the power at which the electromigration process is allowed to avalanche. Using carefully engineered gold contacts and a nonuniform downward electrostatic force, we can controllably tear the width of suspended graphene channels from over 100 nm down to 27 nm. We demonstrate that this lateral confinement creates high-quality suspended quantum dots. This fabrication method could be extended to other two-dimensional materials.

Electronic transport in graphene with aggregated hydrogen adatoms

Hydrogen adatoms and other species covalently bound to graphene act as resonant scattering centers affecting the electronic transport properties and inducing Anderson localization. We show that attractive interactions between adatoms on graphene and their diffusion mobility strongly modify the spatial distribution, thus fully eliminating isolated adatoms and increasing the population of larger size adatom aggregates. Such spatial correlation is found to strongly influence the electronic transport properties of disordered graphene. Our scaling analysis shows that such aggregation of adatoms increases conductance by up to several orders of magnitude and results in significant extension of the Anderson localization length in the strong localization regime. We introduce a simple definition of the effective adatom concentration x*, which describes the transport properties of both random and correlated distributions of hydrogen adatoms on graphene across a broad range of concentrations.

Effective theory of Floquet topological transitions

We develop a theory of topological transitions in a Floquet topological insulator, using graphene irradiated by circularly polarized light as a concrete realization. We demonstrate that a hallmark signature of such transitions in a static system, i.e., metallic bulk transport with conductivity of order e^{2}/h, is substantially suppressed at some Floquet topological transitions in the clean system. We determine the conditions for this suppression analytically and confirm our results in numerical simulations. Remarkably, introducing disorder dramatically enhances this transport by several orders of magnitude.

Magnetoconductance of the Corbino disk in graphene: chiral tunneling and quantum interference in the bilayer case

Quantum transport through an impurity-free Corbino disk in bilayer graphene is investigated analytically, using the mode-matching method to give an effective Dirac equation, in the presence of uniform magnetic fields. Similarly as in the monolayer case (see Rycerz 2010 Phys. Rev. B 81 121404; Katsnelson 2010 Europhys. Lett. 89 17001), conductance at the Dirac point shows oscillations with the flux piercing the disk area ΦD characterized by the period Φ(0) = 2 (h/e) ln(R(o)/R(i)), where R(o)(R(i)) is the outer (inner) disk radius. The oscillation magnitude depends either on the radii ratio or on the physical disk size, with the condition for maximal oscillations being R(o)/R(i) ≃ [ Rit⊥/(2ℏvF) ](4/p) (for R(o)/R(i) ≫ 1), where t⊥ is the interlayer hopping integral, vF is the Fermi velocity in graphene, and p is an even integer. Odd-integer values of p correspond to vanishing oscillations for the normal Corbino setup, or to oscillation frequency doubling for the Andreev-Corbino setup. At higher Landau levels, magnetoconductance behaves almost identically in the monolayer and bilayer cases. A brief comparison with the Corbino disk in a two-dimensional electron gas is also provided in order to illustrate the role of chiral tunneling in graphene.

Quantum noise and asymmetric scattering of electrons and holes in graphene

We present measurements of quantum interference noise in double-gated single layer graphene devices at low temperatures. The noise characteristics show a nonmonotonic dependence on carrier density, which is related to the interplay between charge inhomogeneity and different scattering mechanisms. Linearly increasing 1/f noise at low carrier densities coincides with the observation of weak localization, suggesting the importance of short-range disorder in this regime. Using perpendicular and parallel p-n junctions, we find that the observed asymmetry of the noise with respect to the Dirac point can be related to asymmetric scattering of electrons and holes on the disorder potential.

Optical properties of graphene superlattices

In this work, the optical responses of graphene superlattices, i.e. graphene subjected to a periodic scalar potential, are theoretically reported. The optical properties were studied by investigating the optical conductivity, which was calculated using the Kubo formalism. It was found that the optical conductivity becomes dependent on the photon polarization and is suppressed in the photon energy range of (0, Ub), where Ub is the potential barrier height. In the higher photon energy range, i.e. Ω > Ub, the optical conductivity is, however, almost identical to that of pristine graphene. Such behaviors of the optical conductivity are explained microscopically through the analysis of the elements of optical matrices and effectively through a simple model, which is based on the Pauli blocking mechanism.

Quantum transport of disordered Weyl semimetals at the nodal point

Weyl semimetals are paradigmatic topological gapless phases in three dimensions. We here address the effect of disorder on charge transport in Weyl semimetals. For a single Weyl node with energy at the degeneracy point and without interactions, theory predicts the existence of a critical disorder strength beyond which the density of states takes on a nonzero value. Predictions for the conductivity are divergent, however. In this work, we present a numerical study of transport properties for a disordered Weyl cone at zero energy. For weak disorder, our results are consistent with a renormalization group flow towards an attractive pseudoballistic fixed point with zero conductivity and a scale-independent conductance; for stronger disorder, diffusive behavior is reached. We identify the Fano factor as a signature that discriminates between these two regimes.

Conductance and Fano factor in normal/ferromagnetic/normal bilayer graphene junction

We theoretically investigate the transport properties of bilayer graphene junctions, where the ferromagnetic strips are attached to the middle region of the graphene sheet. In these junctions, we can control the band gap and the band structure of the bilayer graphene by using the bias voltage between the layers and the exchange field induced on the layers. The conductance and Fano factor (F ) are calculated by the Landauer–Büttiker formula. It is found that when the voltage between the layers or the exchange field are tuned, the pseudodiffusive (F = 1/3) transport turns into tunneling (F = 1) or ballistic transport (F = 0). By tuning the potential difference between the layers, one can control the spin polarization of the current.

Electron-phonon coupling in suspended graphene: supercollisions by ripples

Using electrical transport experiments and shot noise thermometry, we find strong evidence that "supercollision" scattering processes by flexural modes are the dominant electron-phonon energy transfer mechanism in high-quality, suspended graphene around room temperature. The power law dependence of the electron-phonon coupling changes from cubic to quintic with temperature. The change of the temperature exponent by two is reflected in the quadratic dependence on chemical potential, which is an inherent feature of two-phonon quantum processes.

Emergence of massless Dirac fermions in graphene's Hofstadter butterfly at switches of the quantum Hall phase connectivity

The fractal spectrum of magnetic minibands (Hofstadter butterfly), induced by the moiré superlattice of graphene on a hexagonal crystal substrate, is known to exhibit gapped Dirac cones. We show that the gap can be closed by slightly misaligning the substrate, producing a hierarchy of conical singularities (Dirac points) in the band structure at rational values Φ = (p/q)(h/e) of the magnetic flux per supercell. Each Dirac point signals a switch of the topological quantum number in the connected component of the quantum Hall phase diagram. Model calculations reveal the scale-invariant conductivity σ = 2qe(2)/πh and Klein tunneling associated with massless Dirac fermions at these connectivity switches.