Photoemission from buried interfaces in SrTiO3/LaTiO3 superlattices

Proton Conducting Neuromorphic Materials and Devices

Neuromorphic computing and artificial intelligence hardware generally aims to emulate features found in biological neural circuit components and to enable the development of energy-efficient machines. In the biological brain, ionic currents and temporal concentration gradients control information flow and storage. It is therefore of interest to examine materials and devices for neuromorphic computing wherein ionic and electronic currents can propagate. Protons being mobile under an external electric field offers a compelling avenue for facilitating biological functionalities in artificial synapses and neurons. In this review, we first highlight the interesting biological analog of protons as neurotransmitters in various animals. We then discuss the experimental approaches and mechanisms of proton doping in various classes of inorganic and organic proton-conducting materials for the advancement of neuromorphic architectures. Since hydrogen is among the lightest of elements, characterization in a solid matrix requires advanced techniques. We review powerful synchrotron-based spectroscopic techniques for characterizing hydrogen doping in various materials as well as complementary scattering techniques to detect hydrogen. First-principles calculations are then discussed as they help provide an understanding of proton migration and electronic structure modification. Outstanding scientific challenges to further our understanding of proton doping and its use in emerging neuromorphic electronics are pointed out.

Complex Oxides for Brain-Inspired Computing: A Review

The fields of brain-inspired computing, robotics, and, more broadly, artificial intelligence (AI) seek to implement knowledge gleaned from the natural world into human-designed electronics and machines. In this review, the opportunities presented by complex oxides, a class of electronic ceramic materials whose properties can be elegantly tuned by doping, electron interactions, and a variety of external stimuli near room temperature, are discussed. The review begins with a discussion of natural intelligence at the elementary level in the nervous system, followed by collective intelligence and learning at the animal colony level mediated by social interactions. An important aspect highlighted is the vast spatial and temporal scales involved in learning and memory. The focus then turns to collective phenomena, such as metal-to-insulator transitions (MITs), ferroelectricity, and related examples, to highlight recent demonstrations of artificial neurons, synapses, and circuits and their learning. First-principles theoretical treatments of the electronic structure, and in situ synchrotron spectroscopy of operating devices are then discussed. The implementation of the experimental characteristics into neural networks and algorithm design is then revewed. Finally, outstanding materials challenges that require a microscopic understanding of the physical mechanisms, which will be essential for advancing the frontiers of neuromorphic computing, are highlighted.

Magic Doping and Robust Superconductivity in Monolayer FeSe on Titanates

The enhanced superconductivity in monolayer FeSe on titanates opens a fascinating pathway toward the rational design of high-temperature superconductors. Utilizing the state-of-the-art oxide plus chalcogenide molecular beam epitaxy systems in situ connected to a synchrotron angle-resolved photoemission spectroscope, epitaxial LaTiO3 layers with varied atomic thicknesses are inserted between monolayer FeSe and SrTiO3, for systematic modulation of interfacial chemical potential. With the dramatic increase of electron accumulation at the LaTiO3/SrTiO3 surface, providing a substantial surge of work function mismatch across the FeSe/oxide interface, the charge transfer and the superconducting gap in the monolayer FeSe are found to remain markedly robust. This unexpected finding indicate the existence of an intrinsically anchored "magic" doping within the monolayer FeSe systems.

How heteroepitaxy occurs on strontium titanate

In traditional models of heteroepitaxy, the substrate serves mainly as a crystalline template for the thin-film lattice, dictating the initial roughness of the film and the degree of coherent strain. Here, performing in situ surface x-ray diffraction during the heteroepitaxial growth of LaTiO₃ on SrTiO₃ (001), we find that a TiO₂ adlayer composed of the ( 13 × 13 ) R33.7° and ( 2 × 2 ) R45.0° reconstructions is a highly active participant in the growth process, continually diffusing to the surface throughout deposition. The effects of the TiO₂ adlayer on layer-by-layer growth are investigated using different deposition sequences and anomalous x-ray scattering, both of which permit detailed insight into the dynamic layer rearrangements that take place. Our work challenges commonly held assumptions regarding growth on TiO₂-terminated SrTiO₃ (001) and demonstrates the critical role of excess TiO₂ surface stoichiometry on the initial stages of heteroepitaxial growth on this important perovskite oxide substrate material.

Probing vacancy behavior across complex oxide heterointerfaces

Oxygen vacancies ( V O • • ) play a critical role as defects in complex oxides in establishing functionality in systems including memristors, all-oxide electronics, and electrochemical cells that comprise metal-insulator-metal or complex oxide heterostructure configurations. Improving oxide-oxide interfaces necessitates a direct, spatial understanding of vacancy distributions that define electrochemically active regions. We show vacancies deplete over micrometer-level distances in Nb-doped SrTiO₃ (Nb:SrTiO₃) substrates due to deposition and post-annealing processes. We convert the surface potential across a strontium titanate/yttria-stabilized zirconia (STO/YSZ) heterostructured film to spatial (<100 nm) vacancy profiles within STO using (T = 500°C) in situ scanning probes and semiconductor analysis. Oxygen scavenging occurring during pulsed laser deposition reduces Nb:STO substantially, which partially reoxidizes in an oxygen-rich environment upon cooling. These results (i) introduce the means to spatially resolve quantitative vacancy distributions across oxide films and (ii) indicate the mechanisms by which oxide thin films enhance and then deplete vacancies within the underlying substrate.

Orbital Ordering of the Mobile and Localized Electrons at Oxygen-Deficient LaAlO3/SrTiO3 Interfaces

Interfacing different transition-metal oxides opens a route to functionalizing their rich interplay of electron, spin, orbital, and lattice degrees of freedom for electronic and spintronic devices. Electronic and magnetic properties of SrTiO₃-based interfaces hosting a mobile two-dimensional electron system (2DES) are strongly influenced by oxygen vacancies, which form an electronic dichotomy, where strongly correlated localized electrons in the in-gap states (IGSs) coexist with noncorrelated delocalized 2DES. Here, we use resonant soft-X-ray photoelectron spectroscopy to prove the e_g character of the IGSs, as opposed to the t_2g character of the 2DES in the paradigmatic LaAlO₃/SrTiO₃ interface. We furthermore separate the d _xy and d _xz/d _xz orbital contributions based on deeper consideration of the resonant photoexcitation process in terms of orbital and momentum selectivity. Supported by a self-consistent combination of density functional theory and dynamical mean field theory calculations, this experiment identifies local orbital reconstruction that goes beyond the conventional e_g- vs-t_2g band ordering. A hallmark of oxygen-deficient LaAlO₃/SrTiO₃ is a significant hybridization of the e_g and t_2g orbitals. Our findings provide routes for tuning the electronic and magnetic properties of oxide interfaces through "defect engineering" with oxygen vacancies.

Tailoring Materials for Mottronics: Excess Oxygen Doping of a Prototypical Mott Insulator

The Mott transistor is a paradigm for a new class of electronic devices-often referred to by the term Mottronics-which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide compounds are usually very robust, new methods have to be developed to push such materials right to the boundary to the metallic phase in order to enable the metal-insulator transition to be switched by electric gating. Here, it is demonstrated that thin films of the prototypical Mott insulator LaTiO₃ grown by pulsed laser deposition under oxygen atmosphere are readily tuned by excess oxygen doping across the line of the band-filling controlled Mott transition in the electronic phase diagram. The detected insulator to metal transition is characterized by a strong change in resistivity of several orders of magnitude. The use of suitable substrates and capping layers to inhibit oxygen diffusion facilitates full control of the oxygen content and renders the films stable against exposure to ambient conditions. These achievements represent a significant advancement in control and tuning of the electronic properties of LaTiO_3+x thin films making it a promising channel material in future Mottronic devices.

Electronic defect states at the LaAlO3/SrTiO3 heterointerface revealed by O K-edge X-ray absorption spectroscopy

Interfaces of two dissimilar complex oxides exhibit exotic physical properties that are absent in their parent compounds.

Trends in (LaMnO3)n/(SrTiO3)m superlattices with varying layer thicknesses

We investigate the thickness dependence of the structural, electronic, and magnetic properties of (LaMnO₃)_n/(SrTiO₃)_m (n, m = 2, 4, 6, 8) superlattices using density functional theory. The electronic structure turns out to be highly sensitive to the onsite Coulomb interaction. In contrast to bulk SrTiO₃, strongly distorted O octahedra are observed in the SrTiO₃ layers with a systematic off centering of the Ti atoms. The systems favour ferromagnetic spin ordering rather than the antiferromagnetic spin ordering of bulk LaMnO₃ and all show half-metallicity, while a systematic reduction of the minority spin band gaps as a function of the LaMnO₃ and SrTiO₃ layer thicknesses originates from modifications of the Ti d_xy states.

Electronic reconstruction at the isopolar LaTiO(3)/LaFeO(3) interface: an X-ray photoemission and density-functional theory study

We report the formation of a nonmagnetic band insulator at the isopolar interface between the antiferromagnetic Mott-Hubbard insulator LaTiO_{3} and the antiferromagnetic charge transfer insulator LaFeO_{3}. By density-functional theory calculations, we find that the formation of this interface state is driven by the combination of O band alignment and crystal field splitting energy of the t_{2g} and e_{g} bands. As a result of these two driving forces, the Fe 3d bands rearrange and electrons are transferred from Ti to Fe. This picture is supported by x-ray photoelectron spectroscopy, which confirms the rearrangement of the Fe 3d bands and reveals an unprecedented charge transfer up to 1.2±0.2  e^{-}/interface unit cell in our LaTiO_{3}/LaFeO_{3} heterostructures.

Direct spectroscopic observation of a shallow hydrogenlike donor state in insulating SrTiO3

We present a direct spectroscopic observation of a shallow hydrogenlike muonium state in SrTiO(3) which confirms the theoretical prediction that interstitial hydrogen may act as a shallow donor in this material. The formation of this muonium state is temperature dependent and appears below ∼ 70K. From the temperature dependence we estimate an activation energy of ∼ 50 meV in the bulk and ∼ 23 meV near the free surface. The field and directional dependence of the muonium precession frequencies further supports the shallow impurity state with a rare example of a fully anisotropic hyperfine tensor. From these measurements we determine the strength of the hyperfine interaction and propose that the muon occupies an interstitial site near the face of the oxygen octahedron in SrTiO(3). The observed shallow donor state provides new insight for tailoring the electronic and optical properties of SrTiO(3)-based oxide interface systems.

Suppression of the two-dimensional electron gas in LaGaO3/SrTiO3 by cation intermixing

Cation intermixing at the n-type polar LaGaO3/SrTiO3 (001) interface is investigated by first principles calculations. Ti⇔Ga, Sr⇔La, and SrTi⇔LaGa intermixing are studied in comparison to each other, with a focus on the interface stability. We demonstrate in which cases intermixing is energetically favorable as compared to a clean interface. A depopulation of the Ti 3dxy orbitals under cation intermixing is found, reflecting a complete suppression of the two-dimensional electron gas present at the clean interface.

Layer-by-layer evolution of a two-dimensional electron gas near an oxide interface

We report the momentum-resolved measurement of a two-dimensional electron gas at the LaTiO(3)/SrTiO(3) interface by angle-resolved photoemission spectroscopy (ARPES). Thanks to an advanced sample preparation technique, the orbital character of the conduction electrons and the electronic correlations can be accessed quantitatively as each unit cell layer is added. We find that all of these quantities change dramatically with distance from the interface. These findings open the way to analogous studies on other heterostructures, which are traditionally a forbidden field for ARPES.

Interface Fermi states of LaAlO3/SrTiO3 and related heterostructures

The interfaces of LaAlO3/SrTiO3 and (LaAlO3)(x)(SrTiO3)(1-x)/SrTiO3 heterostructures have been investigated by soft x-ray photoelectron spectroscopy for different layer thicknesses across the insulator-to-metal interface transition. The valence band and Fermi edge were probed using resonant photoemission across the Ti L(2,3) absorption edge. The presence of a Fermi-edge signal originating from the partially filled Ti 3d orbitals is only found in the conducting samples. No Fermi-edge signal could be detected for insulating samples below the critical thickness. Furthermore, the angular dependence of the Fermi intensity allows the determination of the spatial extent of the conducting electron density perpendicular to the interface.

Labeling interacting configurations through an analysis of excitation dynamics in a resonant photoemission experiment: the case of rutile TiO2

A detailed study of resonant photoemission at Ti L(2,3) edges of insulating rutile TiO(2-x) thin film is presented. Pure TiO(2) resonating structures, defect-related resonances, resonant Raman-Auger and normal LVV Auger emissions are tracked, including an unpredicted two-hole correlated satellite below the non-bonding part of the valence band. The analysis of excitation dynamics unambiguously addresses the origin of these features and, in particular, the extent of charge transfer effects on the Ti-O bonding in the valence band of rutile, disclosing further applications to the more general case of, formally, d(0) oxides.

Nature of weak magnetism in SrTiO3/LaAlO3 multilayers

We report the observation of weak magnetism in superlattices of LaAlO(3)/SrTiO(3) using β-detected nuclear magnetic resonance. The spin lattice relaxation rate of ^{8}Li in superlattices with a spacer layers of 8 and 6 unit cells of LaAlO(3) exhibits a strong peak near ~35 K, whereas no such peak is observed in a superlattice with spacer layer thickness of 3 unit cells. We attribute the observed temperature dependence to slowing down of weakly coupled electronic moments at the LaAlO(3)/SrTiO(3) interface. These results show that the magnetism at the interface depends strongly on the thickness of the spacer layer, and that a minimal thickness of ~4-6 unit cells is required for the appearance of magnetism. A simple model is used to determine that the observed relaxation is due to small fluctuating moments (~0.002μ(B)) in the two samples with a larger LaAlO(3) spacer thickness.

Electronic phenomena at complex oxide interfaces: insights from first principles

Oxide interfaces have attracted considerable attention in recent years due to the emerging novel behavior which does not exist in the corresponding bulk parent compounds. This opens possibilities for future applications in oxide-based electronics and spintronics devices. Among the different materials combinations, heterostructures containing the two simple band insulators LaAlO(3) and SrTiO(3) have advanced to a model system exhibiting unanticipated properties ranging from conductivity, to magnetism, even to superconductivity. Electronic structure calculations have contributed significantly towards understanding these phenomena and we review here the progress achieved in the past few years, also showing some future directions and perspectives. A central issue in understanding the novel behavior in these oxide heterostructures is to discover the way (or ways) that these heterostructures deal with the polar discontinuity at the interface. Despite analogies to polar semiconductor interfaces, transition metal oxides offer much richer possibilities to compensate the valence mismatch, including, for example, an electronic reconstruction. Moreover, electronic correlations can lead to additional complex behavior like charge disproportionation and order, magnetism and orbital order. We discuss in some detail the role of finite size effects in ultrathin polar films on a nonpolar substrate leading to another intriguing feature-the thickness-dependent insulator-to-metal transition in thin LaAlO(3) films on a SrTiO(3)(001) substrate, driven by the impending polar catastrophe. The strong and uniform lattice polarization that emerges as a response to the potential build-up enables the system to remain insulating up to a few layers. However, beyond a critical thickness there is a crossover from an ionic relaxation to an electronic reconstruction. At this point two bands of electron and hole character, separated both in real and in reciprocal space, have been shifted sufficiently by the internal field in LaAlO(3) to impose the closing of the bandgap. We discuss briefly further parameters that allow one to manipulate this behavior, e.g. via vacancies, adsorbates or an oxide capping layer.

Epitaxial growth and properties of doped transition metal and complex oxide films

The detailed science and technology of crystalline oxide film growth using vacuum methods is reviewed and discussed with an eye toward gaining fundamental insights into the relationships between growth process and parameters, film and interface structure and composition, and electronic, magnetic and photochemical properties. The topic is approached first from a comparative point of view based on the most widely used growth methods, and then on the basis of specific material systems that have generated very high levels of interest. Emphasis is placed on the wide diversity of structural, electronic, optical and magnetic properties exhibited by oxides, and the fascinating results that this diversity of properties can produce when combined with the degrees of freedom afforded by heteroepitaxy.

Spectroscopic evidence for competing reconstructions in polar multilayers LaAlO3/LaVO3/LaAlO3

We have studied the valence redistribution of V in LaAlO(3)/LaVO(3)/LaAlO(3) trilayers, which are composed of only polar layers grown on SrTiO3 (001) substrates, by core-level photoemission spectroscopy. We have found that the V valence is intermediate between V3+ and V4+ for thin LaAlO3 cap layers, decreases with increasing cap-layer thickness, and finally recovers the bulk value of V3+ at approximately 10 unit-cell thickness. In order to interpret these results, we propose that the atomic reconstruction of the polar LaAlO3 surface competes with the purely electronic V valence change so that the polar catastrophe is avoided at the cost of minimum energy.

Novel electronic structure induced by a highly strained oxide interface with incommensurate crystal fields

The misfit oxide, Bi2Ba1.3K0.6Co2.1O7.94, made of alternating rocksalt-structured [BiO/BaO] layers and hexagonal CoO2 layers, was studied by angle-resolved photoemission spectroscopy, revealing the electronic structure of a highly strained oxide interface. We found that low-energy states are confined within individual sides of the interface, but scattered by the incommensurate crystal field from the other side. Furthermore, the high strain on the rocksalt layer induces large charge transfer to the CoO2 layer, and a novel effect, the interfacial enhancement of electron-phonon interactions, is discovered.

Origin of metallic states at the heterointerface between the band insulators LaAlO3 and SrTiO3

We have studied the electronic structure at the heterointerface between the band insulators LaAlO3 and SrTiO3 using in situ photoemission spectroscopy. Our experimental results clearly reveal the formation of a notched structure on the SrTiO3 side due to band bending at the metallic LaAlO3/TiO2-SrTiO3 interface. The structure, however, is absent at the insulating LaAlO3/SrO-SrTiO3 interface. The present results indicate that the metallic states originate not from the charge transfer through the interface on a short-range scale but from the accumulation of carriers on a long-range scale.

Charge transfer in heterostructures of strongly correlated materials

In this work, recent theoretical investigations by the authors in the area of oxide multilayers are briefly reviewed. The calculations were carried out using model Hamiltonians and a variety of non-perturbative techniques. Moreover, new results are also included here. They correspond to the generation of a metallic state by mixing insulators in a multilayer geometry, using the Hubbard and double-exchange models. For the latter, the resulting metallic state is also ferromagnetic. This illustrates how electron or hole doping via transfer of charge in multilayers can lead to the study of phase diagrams of transition metal oxides in the clean limit. Currently, these phase diagrams are much affected by the disordering standard chemical doping procedure, which introduces quenched disorder in the material.

Conducting interfaces between polar and non-polar insulating perovskites

Two-dimensional electron gases in semiconductors have found use in applications such as optoelectronics, high-power radio-frequency and magnetoelectronic devices. The ability to grow heterostructures of oxides exhibiting similar effects is a significant step towards the fabrication of all-oxide devices. Here, we give an overview of recent studies of two-dimensional electron gases formed at the interface between polar and non-polar perovskites. We discuss the proposed explanations of the origin of the conductivity and properties of the ground state.

Perovskites and thin films-crystallography and chemistry

We discuss the crystallographic and chemical basis of the perovskite family (ABX(3)) of oxides that are used in different thin film applications. Starting with the original structure we extend our scope to several modifications. Basic parameters like the ionic radii, the tolerance factor, the occupation of the oxygen sublattice and their effect on the structural parameters will be mentioned together with examples of relationships between structural and physical properties in the bulk and at interfaces.

Optical study of the free-carrier response of LaTiO3/SrTiO3 superlattices

We used infrared spectroscopic ellipsometry to investigate the electronic properties of LaTiO_{3}/SrTiO_{3} superlattices (SLs). Our results indicated that, independent of the SL periodicity and individual layer thickness, the SLs exhibited a Drude metallic response with sheet carrier density per interface approximately 3x10;{14} cm;{-2}. This is probably due to the leakage of d electrons at interfaces from the Mott insulator LaTiO3 to the band insulator SrTiO3. We observed a carrier relaxation time approximately 35 fs and mobility approximately 35 cm;{2} V-1 s;{-1} at 10 K, and an unusual temperature dependence of carrier density that was attributed to the dielectric screening of quantum paraelectric SrTiO3.

Electronic reconstruction at SrMnO3-LaMnO3 superlattice interfaces

We use resonant soft-x-ray scattering (RSXS) to study the electronic reconstruction at the interface between the Mott insulator LaMnO3 and the band insulator SrMnO3. Superlattices of these two insulators were shown previously to have both ferromagnetism and metallic tendencies [Koida, Phys. Rev. B 66, 144418 (2002)10.1103/PhysRevB.66.144418]. By studying a judiciously chosen superlattice reflection, we show that the interface density of states exhibits a pronounced peak at the Fermi level, similar to that predicted in related titanate superlattices by Okamoto et al. [Phys. Rev. B 70, 241104(R) (2004)10.1103/PhysRevB.70.241104]. The intensity of this peak correlates with the conductivity and magnetization, suggesting it is the driver of metallic behavior. Our study demonstrates a general strategy for using RSXS to probe the electronic properties of heterostructure interfaces.

Structural basis for the conducting interface between LaAlO3 and SrTiO3

The complete atomic structure of a five-monolayer film of LaAlO3 on SrTiO3 has been determined for the first time by surface x-ray diffraction in conjunction with the coherent Bragg rod analysis phase-retrieval method and further structural refinement. Cationic mixing at the interface results in dilatory distortions and the formation of metallic La(1-x)SrxTiO3. By invoking electrostatic potential minimization, the ratio of Ti{4+}/Ti{3+} across the interface was determined, from which the lattice dilation could be quantitatively explained using ionic radii considerations. The correctness of this model is supported by density functional theory calculations. Thus, the formation of a quasi-two-dimensional electron gas in this system is explained, based on structural considerations.

Correlation-driven charge order at the interface between a Mott and a band insulator

To study digital Mott insulator LaTiO3 and band insulator SrTiO3 interfaces, we apply correlated band theory within the local density approximation including a Hubbard U to (n, m) multilayers, 1<or=n, m<or=9 using unit cells with larger lateral periodicity. If the on-site repulsion on Ti is big enough to model the Mott insulating behavior of undistorted LaTiO3, the charge imbalance at the interface is found in all cases to be accommodated by disproportionation (Ti4++Ti3+), charge ordering, and Ti3+ dxy-orbital ordering, with antiferromagnetic exchange coupling between the spins in the interface layer. Lattice relaxations lead to conducting behavior by shifting (slightly but importantly) the lower Hubbard band, but the charge and orbital order is robust against relaxation.

Magnetic effects at the interface between non-magnetic oxides

The electronic reconstruction at the interface between two insulating oxides can give rise to a highly conductive interface. Here we show how, in analogy to this remarkable interface-induced conductivity, magnetism can be induced at the interface between the otherwise non-magnetic insulating perovskites SrTiO3 and LaAlO3. A large negative magnetoresistance of the interface is found, together with a logarithmic temperature dependence of the sheet resistance. At low temperatures, the sheet resistance reveals magnetic hysteresis. Magnetic ordering is a key issue in solid-state science and its underlying mechanisms are still the subject of intense research. In particular, the interplay between localized magnetic moments and the spin of itinerant conduction electrons in a solid gives rise to intriguing many-body effects such as Ruderman-Kittel-Kasuya-Yosida interactions, the Kondo effect and carrier-induced ferromagnetism in diluted magnetic semiconductors. The conducting oxide interface now provides a versatile system to induce and manipulate magnetic moments in otherwise non-magnetic materials.