Positive current correlations associated with super-Poissonian shot noise

A One-Dimensional Effective Model for Nanotransistors in Landauer-Büttiker Formalism

In a series of publications, we developed a compact model for nanotransistors in which quantum transport in a variety of industrial nano-FETs was described quantitatively. The compact nanotransistor model allows for the extraction of important device parameters as the effective height of the source-drain barrier, device heating, and the quality of the coupling between conduction channel and the contacts. Starting from a basic description of quantum transport in a multi-terminal device in Landauer–Büttiker formalism, we give a detailed derivation of all relevant formulas necessary to construct our compact nanotransistor model. Here we make extensive use of the the R-matrix method.

Negative and positive cross-correlations of current noises in quantum Hall edge channels at bulk filling factor [Formula: see text]

Cross-correlation noise in electrical currents generated from a series connection of two quantum point contacts (QPCs), the injector and the detector, is described for investigating energy relaxation in quantum Hall edge channels at bulk filling factor [Formula: see text]. We address the importance of tuning the energy bias across the detector for this purpose. For a long channel with a macroscopic floating ohmic contact that thermalizes the electrons, the cross-correlation turns from negative values to the maximally positive value (identical noise in the two currents) by tuning the effective energy bias to zero. This can be understood by considering competition between the low-frequency charge fluctuation generated at the injector, which contributes positive correlation, and the partition noise at the detector, which gives negative correlation. Strikingly, even for a short channel without intentional thermalization, significantly large positive correlation is observed in contrast to negative values expected for coherent transport between the two QPCs.

Shot noise properties of electron transport through an interacting multi-terminal quantum dots system

We study the correlations of tunneling currents through an interacting quantum dots (QDs) system composed of a top single QD and a bottom qubit with purely capacitive coupling within a quantum master approach. We find that the super-Poissonian current noise of the qubit near resonance, which is a signature of coherent tunneling within the transport qubit for asymmetrical contact couplings, is strongly dependent on non-equilibrium transport through the top QD with different coupling configurations. For pure-dephasing coupling, such a super-Poissonian feature is asymmetrically washed out by increasing coupling strength showing obvious qubit level position dependence with finite bias and temperature, while for orthogonal coupling we can almost symmetrically lower the double peak to a double minimum by increasing coupling strength or adjusting the ratio of the top QD contact couplings in the large bias limit, indicating the transition from coherent tunneling to sequential tunneling.

Cross correlation of incoherent multiple Andreev reflections

We use a semiclassical theory to calculate the current correlations in a multiterminal structure composed of a normal metallic dot connected to all superconducting leads at arbitrary voltage and temperature. This theory holds when the proximity effect is suppressed in the dot. At low voltage, eV<<Delta (Delta is the superconducting gap in the leads), when charge transport is due to incoherent multiple Andreev reflections, the correlations are strongly enhanced compared to those in the normal state. Moreover, we predict that the cross correlation can be positive or negative depending on the properties of the point contacts between the dot and the leads. We also discuss the effect of inelastic scattering in the dot.

Noise correlations in a Coulomb-blockaded quantum dot

We report measurements of current noise auto- and cross correlation in a tunable quantum dot with two or three leads. As the Coulomb blockade is lifted at finite source-drain bias, the autocorrelation evolves from super- to sub-Poissonian in the two-lead case, and the cross correlation evolves from positive to negative in the three-lead case, consistent with transport through multiple levels. Cross correlations in the three-lead dot are found to be proportional to the noise in excess of the Poissonian value in the limit of weak output tunneling.

Resonance fluorescence in transport through quantum dots: noise properties

We study a two-level quantum dot embedded in a phonon bath and irradiated by a time-dependent ac field, and develop a method that allows us to extract simultaneously the full counting statistics of the electronic tunneling and relaxation (by phononic emission) events as well as their correlation. We find that the quantum noise of both the transmitted electrons and the emitted phonons can be controlled by the manipulation of external parameters such as the driving field intensity or the bias voltage.

Tunable noise cross correlations in a double quantum dot

We report measurements of the cross correlation between temporal current fluctuations in two capacitively coupled quantum dots in the Coulomb blockade regime. The sign of the cross-spectral density is found to be tunable by gate voltage and source-drain bias. We find good agreement with the data by including an interdot Coulomb interaction in a sequential-tunneling model.