Probing quasiparticle states bound by disparate periodic potentials

3D-printed graphene/polymer structures for electron-tunneling based devices

Designing 3D printed micro-architectures using electronic materials with well-understood electronic transport within such structures will potentially lead to accessible device fabrication for 'on-demand' applications. Here we show controlled nozzle-extrusion based 3D printing of a commercially available nano-composite of graphene/polylactic acid, enabling the fabrication of a tensile gauge functioning via the readjustment of the electron-tunneling barrier width between conductive graphene-centers. The electronic transport in the graphene/polymer 3D printed structure exhibited the Fowler Nordheim mechanism with a tunneling width of 0.79-0.95 nm and graphene centers having a carrier concentration of 2.66 × 10¹²/cm². Furthermore, a mechanical strain that increases the electron-tunneling width between graphene nanostructures (~ 38 nm) by only 0.19 Ǻ reduces the electron flux by 1e/s/nm² (from 18.51 to 19.51 e/s/nm²) through the polylactic acid junctions in the 3D-printed heterostructure. This corresponds to a sensitivity of 2.59 Ω/Ω%, which compares well with other tensile gauges. We envision that the proposed electron-tunneling model for conductive 3D-printed structures with thermal expansion and external strain will lead to an evolution in the design of next-generation of 'on-demand' printed electronic and electromechanical devices.

Electronic structure study of ultrathin Ag(111) films modified by a Si(111) substrate and √3 × √3-Ag2Bi surface

Angle-resolved photoemission spectroscopy experiments show that the electronic structure of a Ag(111) film grown on Si(111) is markedly perturbed by the formation of a √3 × √3-Ag(2)Bi Rashba-type surface alloy. Four spin-split surface states, with different band dispersions and energy contours, intercept and hybridize selectively with the sp-derived quantum well states of the Ag layer. Detailed two-dimensional band mapping of the system was carried out and constant energy contours at different energies result in hexagonal-, star- and flower-like distortions of the quantum well states as a result of various interactions. Further wavy-like modulations of the electronic structure of the film are found to originate from umklapp reflections of the Ag film states according to the surface periodicity.

Direct spectroscopic evidence of spin-dependent hybridization between Rashba-split surface states and quantum-well states

The electronic structure of ultrathin Ag(111) films covered with a square root(3) x square root(3)-Bi/Ag ordered alloy was investigated by means of spin- and angle-resolved photoemission spectroscopy. Surface-state (SS) bands, spin split by the Rashba interaction, selectively couple to the quantum-well state (QWS) bands, originally spin degenerate, in the metal film. Gaps are found to open between QWS and SS with parallel spins, while free-electron-like QWS dispersions are observed for antiparallel spin configurations. The present results demonstrate that in a nonmagnetic metal film the spin degeneracy of the valence levels can be lifted by hybridization with Rashba-type SS bands.

Quantum well band formation in Ag films on InSb(111)

Room temperature deposition of Ag on InSb(111) is known to lead to three-dimensional clustering, without long-range crystalline order. We show by means of angle-resolved photoemission that 'two-step' growth in which the films are annealed to room temperature after low temperature deposition results in the formation of Ag films which are epitaxial, atomically flat, and display a quasi-discrete quantum well band structure. Core level analysis highlights different chemical interactions between the substrate and deposited materials for room temperature and 'two-step' Ag growth.

Electronic and magnetic properties of quasifreestanding graphene on Ni

For the purpose of recovering the intriguing electronic properties of freestanding graphene at a solid surface, graphene self-organized on a Au monolayer on Ni(111) is prepared and characterized by scanning tunneling microscopy. Angle-resolved photoemission reveals a gapless linear pi-band dispersion near K[over] as a fingerprint of strictly monolayer graphene and a Dirac crossing energy equal to the Fermi energy (EF) within 25 meV meaning charge neutrality. Spin resolution shows a Rashba effect on the pi states with a large (approximately 13 meV) spin-orbit splitting up to EF which is independent of k.