Real-space imaging of alternate localization and extension of quasi-two-dimensional electronic States at graphite surfaces in magnetic fields

Phase transitions, conductance fluctuations and distributions in disordered topological insulator stanene

It is essential to understand to what extent the protected edge states of topological insulators (TIs) can survive against the degradation of the ubiquitous disorders in realistic devices. From a different perspective, disorders can also help to enrich the applications by modulation of the phases in TIs. In this work, the phases and phase transitions in stanene, a two-dimensional TI, have been investigated via the statistical approach based on the random matrix theory. Using a tight binding model with Aderson disorder term and the Landauer-Büttiker formalism, we calculated the conductance of realistic stanene ribbons of tens of nanometers long with random disorders. The calculated phase diagram presents TI in the gap, metal in high energy and ordinary insulator in large disorder region. Increasing the width of the ribbon can significantly enhance the robustness of TI phase against disorders. Due to different underlying symmetries, the metallic phase can be further categorized into unitary and orthogonal classes according to the calculated universal conductance fluctuations. The local density of states is calculated, showing characteristic patterns, which can facilitate the experimental identification of the phases. It is found that different phases have distinguishing statistical distribution of conductance. Whereas at the phase boundary the distribution exhibits intermediate features to show where the phase transition occurs. To reveal the phase evolution process, we further studied the effects of the disorders on respective transmission channels. It is found that when phase transition takes place, the major transmission channels of the old phase are fading and the new channels of the new phase are emerging.

Microwave Dynamical Conductivity in the Quantum Hall Regime

Dynamical conductivity contains information of dissipative and nondissipative processes induced by ac-electric fields. In the integer quantum Hall (QH) effect where the nondissipative Hall current is the most prominent feature, its robustness is assured by localized states within the Landau levels. We establish a noncontact method with a circular cavity resonator and detect the real and imaginary parts of the longitudinal and Hall conductivities at a microwave frequency in magnetic fields. The conventional Shubnikov-de Haas oscillations and QH plateaus are observed in the real parts of longitudinal and Hall conductivities, respectively, while periodic structures can be seen in the imaginary parts which are scaled by the QH filling factor. The latter originates from intra-Landau level transitions between different orbital angular momenta. The results demonstrate that the dynamical conductivity measurement provides microscopic information which is not accessible by conventional static methods. The present noncontact method would pave the way to reveal the electron dynamics in other two-dimensional systems such as twisted bilayer graphene.

Van der Waals Heteroepitaxy of Air-Stable Quasi-Free-Standing Silicene Layers on CVD Epitaxial Graphene/6H-SiC

Graphene, consisting of an inert, thermally stable material with an atomically flat, dangling-bond-free surface, is by essence an ideal template layer for van der Waals heteroepitaxy of two-dimensional materials such as silicene. However, depending on the synthesis method and growth parameters, graphene (Gr) substrates could exhibit, on a single sample, various surface structures, thicknesses, defects, and step heights. These structures noticeably affect the growth mode of epitaxial layers, e.g., turning the layer-by-layer growth into the Volmer-Weber growth promoted by defect-assisted nucleation. In this work, the growth of silicon on chemical vapor deposited epitaxial Gr (1 ML Gr/1 ML Gr buffer) on a 6H-SiC(0001) substrate is investigated by a combination of atomic force microscopy (AFM), scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and Raman spectroscopy measurements. It is shown that the perfect control of full-scale almost defect-free 1 ML Gr with a single surface structure and the ultraclean conditions for molecular beam epitaxy deposition of silicon represent key prerequisites for ensuring the growth of extended silicene sheets on epitaxial graphene. At low coverages, the deposition of Si produces large silicene sheets (some hundreds of nanometers large) attested by both AFM and SEM observations and the onset of a Raman peak at 560 cm^-1, very close to the theoretical value of 570 cm^-1 calculated for free-standing silicene. This vibrational mode at 560 cm^-1 represents the highest ever experimentally measured value and is representative of quasi-free-standing silicene with almost no interaction with inert nonmetal substrates. From a coverage rate of 1 ML, the silicene sheets disappear at the expense of 3D Si dendritic islands whose density, size, and thickness increase with the deposited thickness. From this coverage, the Raman mode assigned to quasi-free-standing silicene totally vanishes, and the 2D flakes of silicene are no longer observed by AFM. The experimental results are in very good agreement with the results of kinetic Monte Carlo simulations that rationalize the initial flake growth in solid-state dewetting conditions, followed by the growth of ridges surrounding and eventually covering the 2D flakes. A full description of the growth mechanism is given. This study, which covers a wide range of growth parameters, challenges recent results stating the impossibility to grow silicene on a carbon inert surface and is very promising for large-scale silicene growth. It shows that silicene growth can be achieved using perfectly controlled and ultraclean deposition conditions and an almost defect-free Gr substrate.

A low-temperature scanning tunneling microscope capable of microscopy and spectroscopy in a Bitter magnet at up to 34 T

We present the design and performance of a cryogenic scanning tunneling microscope (STM) which operates inside a water-cooled Bitter magnet, which can attain a magnetic field of up to 38 T. Due to the high vibration environment generated by the magnet cooling water, a uniquely designed STM and a vibration damping system are required. The STM scan head is designed to be as compact and rigid as possible, to minimize the effect of vibrational noise as well as fit the size constraints of the Bitter magnet. The STM uses a differential screw mechanism for coarse tip-sample approach, and operates in helium exchange gas at cryogenic temperatures. The reliability and performance of the STM are demonstrated through topographic imaging and scanning tunneling spectroscopy on highly oriented pyrolytic graphite at T = 4.2 K and in magnetic fields up to 34 T.

Electronic and optical properties of graphene nanoribbons in external fields

A review work is done for the electronic and optical properties of graphene nanoribbons in magnetic, electric, composite, and modulated fields. Effects due to the lateral confinement, curvature, stacking, non-uniform subsystems and hybrid structures are taken into account. The special electronic properties, induced by complex competitions between external fields and geometric structures, include many one-dimensional parabolic subbands, standing waves, peculiar edge-localized states, width- and field-dependent energy gaps, magnetic-quantized quasi-Landau levels, curvature-induced oscillating Landau subbands, crossings and anti-crossings of quasi-Landau levels, coexistence and combination of energy spectra in layered structures, and various peak structures in the density of states. There exist diverse absorption spectra and different selection rules, covering edge-dependent selection rules, magneto-optical selection rule, splitting of the Landau absorption peaks, intragroup and intergroup Landau transitions, as well as coexistence of monolayer-like and bilayer-like Landau absorption spectra. Detailed comparisons are made between the theoretical calculations and experimental measurements. The predicted results, the parabolic subbands, edge-localized states, gap opening and modulation, and spatial distribution of Landau subbands, have been identified by various experimental measurements.

Substrate-induced symmetry breaking in silicene

We demonstrate that silicene, a 2D honeycomb lattice consisting of Si atoms, loses its Dirac fermion characteristics due to substrate-induced symmetry breaking when synthesized on the Ag(111) surface. No Landau level sequences appear in the tunneling spectra under a magnetic field, and density functional theory calculations show that the band structure is drastically modified by the hybridization between the Si and Ag atoms. This is the first direct example demonstrating the lack of Dirac fermions in a single layer honeycomb lattice due to significant symmetry breaking.

Transcriptional regulation of the nadA gene in Neisseria meningitidis impacts the prediction of coverage of a multicomponent meningococcal serogroup B vaccine

The NadA adhesin is a major component of 4CMenB, a novel vaccine to prevent meningococcus serogroup B (MenB) infection. Under in vitro growth conditions, nadA is repressed by the regulator NadR and poorly expressed, resulting in inefficient killing of MenB strains by anti-NadA antibodies. Interestingly, sera from children infected with strains that express low levels of NadA in laboratory growth nevertheless recognize the NadA antigen, suggesting that NadA expression during infection may be different from that observed in vitro. In a strain panel covering a range of NadA levels, repression was relieved through deleting nadR. All nadR knockout strains expressed high levels of NadA and were efficiently killed by sera from subjects immunized with 4CMenB. A selected MenB strain, NGP165, mismatched for other vaccine antigens, is not killed by sera from immunized infants when the strain is grown in vitro. However, in an in vivo passive protection model, the same sera effectively protected infant rats from bacteremia with NGP165. Furthermore, we identify a novel hydroxyphenylacetic acid (HPA) derivative, reported by others to be produced during inflammation, which induces expression of NadA in vitro, leading to efficient antibody-mediated killing. Finally, using bioluminescent reporters, nadA expression in the infant rat model was induced in vivo at 3 h postinfection. Our results suggest that during infectious disease, NadR repression is alleviated due to niche-specific signals, resulting in high levels of NadA expression from any nadA-positive (nadA(+)) strain and therefore efficient killing by anti-NadA antibodies elicited by the 4CMenB vaccine.

Electronic properties of a graphene antidot in magnetic fields

We report on several unusual properties of a graphene antidot created by a piecewise constant potential in a magnetic field. We find that the total probability of finding the electron in the barrier can be nearly one while it is almost zero outside the barrier. In addition, for each electron state of a graphene antidot there is a dot state with exactly the same wavefunction but with a different energy. This symmetry is a consequence of Klein tunneling of Dirac electrons. Moreover, in zigzag nanoribbons we find strong coupling between some antidot states and zigzag edge states. Experimental tests of these effects are proposed.

Electronic properties of a biased graphene bilayer

We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system-a biased bilayer. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its four-band and two-band continuum approximations, and the four-band model is shown to always be a suitable approximation for the conditions realized in experiments. The model is applied to real biased bilayer devices, made out of either SiC or exfoliated graphene, and good agreement with experimental results is found, indicating that the model is capturing the key ingredients, and that a finite gap is effectively being controlled externally. Analysis of experimental results regarding the electrical noise and cyclotron resonance further suggests that the model can be seen as a good starting point for understanding the electronic properties of graphene bilayer. Also, we study the effect of electron-hole asymmetry terms, such as the second-nearest-neighbour hopping energies t' (in-plane) and γ(4) (inter-layer), and the on-site energy Δ.

Tuning of graphene nanoribbon Landau levels by a nanotube

We investigate theoretically the effects of a nanotube on the graphene nanoribbon Landau level spectrum utilizing the tight-binding model. The addition of a nanotube changes the original dispersionless Landau subbands into distorted parabolic ones, creates additional band-edge states, and modifies the subband spacings. Moreover, the dispersion relations rely sensitively on the nanotube location. The nanotube-ribbon couplings disrupt the Landau wavefunctions and lift their spatial symmetry, which will change the selection rule of optical transitions. The numbers, frequencies and heights of the density of states (DOS) peaks are found to be strongly dependent on the magnetic flux density and the nanotube location. The evolution of the DOS peak with the magnetic flux density is explored. The graphene nanoribbon Landau levels are shown to be modified in an unexpected fashion by the nanotube-ribbon interactions. These predictions can be validated by measuring the spectra of scanning tunneling experiments or magneto-optical experiments, and they are most observable by placing the nanotube at the electron wavefunction localization sites.

Localized distributions of quasi-two-dimensional electronic states near defects artificially created at graphite surfaces in magnetic fields

We measured the local density of states of a quasi two-dimensional electron system (2DES) near defects, artificially created by Ar-ion sputtering, on surfaces of highly oriented pyrolytic graphite (HOPG) with scanning tunneling spectroscopy (STS) in high magnetic fields. At valley energies of the Landau level spectrum, we found two typical localized distributions of the 2DES depending on the defects. These are new types of distributions which are not observed in the previous STS work at the HOPG surface near a point defect [Y. Niimi, Phys. Rev. Lett. 97, 236804 (2006).10.1103/PhysRevLett.97.236804]. With increasing energy, we observed gradual transformation from the localized distributions to the extended ones as expected for the integer quantum Hall state. We show that the defect potential depth is responsible for the two localized distributions from comparison with theoretical calculations.

Quantum Hall transition in real space: from localized to extended states

Using scanning tunneling spectroscopy in an ultrahigh vacuum at low temperature (T=0.3 K) and high magnetic fields (B<or=12 T), we directly probe electronic wave functions across an integer quantum Hall transition. In accordance with theoretical predictions, we observe the evolution from localized drift states in the insulating phases to branched extended drift states at the quantum critical point. The observed microscopic behavior close to the extended state indicates points of localized quantum tunneling, which are considered to be decisive for a quantitative description of the transition.

Construction of a versatile ultralow temperature scanning tunneling microscope

We constructed a dilution-refrigerator (DR)-based ultralow temperature scanning tunneling microscope (ULT-STM) which works at temperatures down to 30 mK, in magnetic fields up to 6 T and in ultrahigh vacuum (UHV). Besides these extreme operation conditions, this STM has several unique features not available in other DR-based ULT-STMs. One can load STM tips as well as samples with clean surfaces prepared in an UHV environment to a STM head keeping low temperature and UHV conditions. After then, the system can be cooled back to near the base temperature within 3 h. Due to these capabilities, it has a variety of applications not only for cleavable materials but also for almost all conducting materials. The present ULT-STM has also an exceptionally high stability in the presence of magnetic field and even during field sweep. We describe details of its design, performance, and applications for low temperature physics.