Density dependent exchange contribution to partial differential mu/ partial differential n and compressibility in graphene

The effect of light-irradiated area on the spin dependent photocurrent in zigzag graphene nanoribbon junctions

In this work, we study the photogalvanic effect of a zigzag graphene nanoribbon junction with a centro-symmetrical structure which consists of 8 zigzag chains by density functional calculations. Specifically, we focus on the cases where the irradiated region is just part of the central region and located at different positions, with an aim to see how the spin dependent photocurrents will change and whether pure spin current can be obtained. It is found that the magnitude of the spin-dependent photocurrents increases with a gradual increase of the irradiated region and pure spin current is achieved when and only when the entire central region is irradiated. In addition, we studied the additive effect in this device to see that if we divide the central region into two parts, whether the sum of the spin current generated by irradiating the two parts individually is equal to that produced when the entire central region is irradiated. It is found that the sum of the spin currents produced by irradiating the two parts individually is smaller than that obtained by irradiating the whole central region, which means that the rule of "1 + 2 = 3" does not hold and the coupling effect between the two parts is important in photocurrent generation.

Interaction-disorder-driven characteristic momentum in graphene, approach of multi-body distribution functions

Multi-point probability measures along with the dielectric function of Dirac Fermions in mono-layer graphene containing particle-particle and white-noise (out-plane) disorder interactions on an equal footing in the Thomas-Fermi-Dirac approximation is investigated. By calculating the one-body carrier density probability measure of the graphene sheet, we show that the density fluctuation (ζ-1) is related to the disorder strength (ni), the interaction parameter (rs) and the average density ([Formula: see text]) via the relation [Formula: see text] for which [Formula: see text] leads to strong density inhomogeneities, i.e. electron-hole puddles (EHPs), in agreement with the previous works. The general equation governing the two-body distribution probability is obtained and analyzed. We present the analytical solution for some limits which is used for calculating density-density response function. We show that the resulting function shows power-law behaviors in terms of ζ with fractional exponents which are reported. The disorder-averaged polarization operator is shown to be a decreasing function of momentum like ordinary 2D parabolic band systems. It is seen that a disorder-driven momentum qch emerges in the system which controls the behaviors of the screened potential. We show that in small densities an instability occurs in which imaginary part of the dielectric function becomes negative and the screened potential changes sign. Corresponding to this instability, some oscillations in charge density along with a screening-anti-screening transition are observed. These effects become dominant in very low densities, strong disorders and strong interactions, the state in which EHPs appear. The total charge probability measure is another quantity which has been investigated in this paper. The resulting equation is analytically solved for large carrier densities, which admits the calculation of arbitrary-point correlation function.

Scaling properties of monolayer graphene away from the Dirac point

The statistical properties of the carrier density profile of graphene in the ground state in the presence of particle-particle interaction and random charged impurity in zero gate voltage has been recently obtained by Najafi et al. [Phys. Rev. E 95, 032112 (2017)2470-004510.1103/PhysRevE.95.032112]. The nonzero chemical potential (μ) in gated graphene has nontrivial effects on electron-hole puddles, since it generates mass in the Dirac action and destroys the scaling behaviors of the effective Thomas-Fermi-Dirac theory. We provide detailed analysis on the resulting spatially inhomogeneous system in the framework of the Thomas-Fermi-Dirac theory for the Gaussian (white noise) disorder potential. We show that the chemical potential in this system as a random surface destroys the self-similarity, and also the charge field is non-Gaussian. We find that the two-body correlation functions are factorized to two terms: a pure function of the chemical potential and a pure function of the distance. The spatial dependence of these correlation functions is double logarithmic, e.g., the two-point density correlation behaves like D_{2}(r,μ)∝μ^{2}exp[-(-a_{D}lnlnr^{β_{D}})^{α_{D}}] (α_{D}=1.82, β_{D}=0.263, and a_{D}=0.955). The Fourier power spectrum function also behaves like ln[S(q)]=-β_{S}^{-a_{S}}(lnq)^{a_{S}}+2lnμ (a_{S}=3.0±0.1 and β_{S}=2.08±0.03) in contrast to the ordinary Gaussian rough surfaces for which a_{S}=1 and β_{S}=1/2(1+α)^{-1} (α being the roughness exponent). The geometrical properties are, however, similar to the ungated (μ=0) case, with the exponents that are reported in the text.

Hydrodynamics of electrons in graphene

Generic interacting many-body quantum systems are believed to behave as classical fluids on long time and length scales. Due to rapid progress in growing exceptionally pure crystals, we are now able to experimentally observe this collective motion of electrons in solid-state systems, including graphene. We present a review of recent progress in understanding the hydrodynamic limit of electronic motion in graphene, written for physicists from diverse communities. We begin by discussing the 'phase diagram' of graphene, and the inevitable presence of impurities and phonons in experimental systems. We derive hydrodynamics, both from a phenomenological perspective and using kinetic theory. We then describe how hydrodynamic electron flow is visible in electronic transport measurements. Although we focus on graphene in this review, the broader framework naturally generalizes to other materials. We assume only basic knowledge of condensed matter physics, and no prior knowledge of hydrodynamics.

Temperature-Dependent Electron-Electron Interaction in Graphene on SrTiO3

The electron band structure of graphene on SrTiO₃ substrate has been investigated as a function of temperature. The high-resolution angle-resolved photoemission study reveals that the spectral width at Fermi energy and the Fermi velocity of graphene on SrTiO₃ are comparable to those of graphene on a BN substrate. Near the charge neutrality, the energy-momentum dispersion of graphene exhibits a strong deviation from the well-known linearity, which is magnified as temperature decreases. Such modification resembles the characteristics of enhanced electron-electron interaction. Our results not only suggest that SrTiO₃ can be a plausible candidate as a substrate material for applications in graphene-based electronics but also provide a possible route toward the realization of a new type of strongly correlated electron phases in the prototypical two-dimensional system via the manipulation of temperature and a proper choice of dielectric substrates.

Tuning quantum nonlocal effects in graphene plasmonics

The response of electron systems to electrodynamic fields that change rapidly in space is endowed by unique features, including an exquisite spatial nonlocality. This can reveal much about the materials' electronic structure that is invisible in standard probes that use gradually varying fields. Here, we use graphene plasmons, propagating at extremely slow velocities close to the electron Fermi velocity, to probe the nonlocal response of the graphene electron liquid. The near-field imaging experiments reveal a parameter-free match with the full quantum description of the massless Dirac electron gas, which involves three types of nonlocal quantum effects: single-particle velocity matching, interaction-enhanced Fermi velocity, and interaction-reduced compressibility. Our experimental approach can determine the full spatiotemporal response of an electron system.

Scale-invariant puddles in graphene: Geometric properties of electron-hole distribution at the Dirac point

We characterize the carrier density profile of the ground state of graphene in the presence of particle-particle interaction and random charged impurity in zero gate voltage. We provide detailed analysis on the resulting spatially inhomogeneous electron gas, taking into account the particle-particle interaction and the remote Coulomb disorder on an equal footing within the Thomas-Fermi-Dirac theory. We present some general features of the carrier density probability measure of the graphene sheet. We also show that, when viewed as a random surface, the electron-hole puddles at zero chemical potential show peculiar self-similar statistical properties. Although the disorder potential is chosen to be Gaussian, we show that the charge field is non-Gaussian with unusual Kondev relations, which can be regarded as a new class of two-dimensional random-field surfaces. Using Schramm-Loewner (SLE) evolution, we numerically demonstrate that the ungated graphene has conformal invariance and the random zero-charge density contours are SLE_{κ} with κ=1.8±0.2, consistent with c=-3 conformal field theory.

Conductance fluctuations in graphene in the presence of long-range disorder

The fluctuations in the conductance of graphene that arise from a long-range disorder potential induced by random impurities are investigated with an atomic tight-binding lattice. The screened impurities lead to a slow variation of the background potential and this varies the overall potential landscape as the Fermi energy or an applied magnetic field is varied. As a result, the phase interference varies randomly and leads to fluctuations in the conductance. Recently, experiments have shown that an applied magnetic field produces a remarkable reduction in the amplitude of these conductance fluctuations. We find qualitative agreement with these experiments, and it appears that the reduction in magnetic field of the fluctuations arises from a field induced smoothing of the conductance landscape.

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

Negative quantum capacitance induced by midgap states in single-layer graphene

We demonstrate that single-layer graphene (SLG) decorated with a high density of Ag adatoms displays the unconventional phenomenon of negative quantum capacitance. The Ag adatoms act as resonant impurities and form nearly dispersionless resonant impurity bands near the charge neutrality point (CNP). Resonant impurities quench the kinetic energy and drive the electrons to the Coulomb energy dominated regime with negative compressibility. In the absence of a magnetic field, negative quantum capacitance is observed near the CNP. In the quantum Hall regime, negative quantum capacitance behavior at several Landau level positions is displayed, which is associated with the quenching of kinetic energy by the formation of Landau levels. The negative quantum capacitance effect near the CNP is further enhanced in the presence of Landau levels due to the magnetic-field-enhanced Coulomb interactions.

Electron-electron interactions in artificial graphene

Recent advances in the creation and modulation of graphenelike systems are introducing a science of "designer Dirac materials". In its original definition, artificial graphene is a man-made nanostructure that consists of identical potential wells (quantum dots) arranged in an adjustable honeycomb lattice in the two-dimensional electron gas. As our ability to control the quality of artificial graphene samples improves, so grows the need for an accurate theory of its electronic properties, including the effects of electron-electron interactions. Here we determine those effects on the band structure and on the emergence of Dirac points.

Electronic properties of graphene: a perspective from scanning tunneling microscopy and magnetotransport

This review covers recent experimental progress in probing the electronic properties of graphene and how they are influenced by various substrates, by the presence of a magnetic field and by the proximity to a superconductor. The focus is on results obtained using scanning tunneling microscopy, spectroscopy, transport and magnetotransport techniques.

Pseudospin in optical and transport properties of graphene

We show that the pseudospin, being an additional degree of freedom for carriers in graphene, can be efficiently controlled by means of the electron-electron interactions which, in turn, can be manipulated by changing the substrate. In particular, an out-of-plane pseudospin component can occur leading to a zero-field Hall current as well as to polarization-sensitive interband optical absorption.

Direct observation and measurement of mobile charge carriers in a monolayer organic semiconductor on a dielectric substrate

We report the electrical characterization of a single layer of an organic semiconductor grown on a dielectric surface. The dynamic response of the charge carriers in the monolayer film of pentacene was characterized through the electrostatic interactions between an electric force microscope (EFM) probe and pentacene islands of various sizes. These islands were formed in situ by segmenting a coalesced pentacene monolayer into separated regions. The size-dependent dielectric responses of the pentacene islands suggest that mobile charges exist in the organic monolayer. Local capacitance spectroscopy revealed that the charge carriers in the p-type pentacene monolayer could be depleted at high bias voltages, enabling a further determination of the charge-carrier concentration in the organic semiconductor ultrathin film.

Electron and phonon renormalization near charged defects in carbon nanotubes

Owing to their influence on electrons and phonons, defects can significantly alter electrical conductance, and optical, mechanical and thermal properties of a material. Thus, understanding and control of defects, including dopants in low-dimensional systems, hold great promise for engineered materials and nanoscale devices. Here, we characterize experimentally the effects of a single defect on electrons and phonons in single-wall carbon nanotubes. The effects demonstrated here are unusual in that they are not caused by defect-induced symmetry breaking. Electrons and phonons are strongly coupled in sp(2) carbon systems, and a defect causes renormalization of electron and phonon energies. We find that near a negatively charged defect, the electron velocity is increased, which in turn influences lattice vibrations locally. Combining measurements on nanotube ensembles and on single nanotubes, we capture the relation between atomic response and the readily accessible macroscopic behaviour.

Ground state of graphene in the presence of random charged impurities

We calculate the carrier-density-dependent ground-state properties of graphene in the presence of random charged impurities in the substrate taking into account disorder and interaction effects nonperturbatively on an equal footing in a self-consistent theoretical formalism. We provide detailed quantitative results on the dependence of the disorder-induced spatially inhomogeneous two-dimensional carrier density distribution on the external gate bias, the impurity density, and the impurity location. We find that the interplay between disorder and interaction is strong, particularly at lower impurity densities. We show that, for the currently available typical graphene samples, inhomogeneity dominates graphene physics at low (< or approximately 10(12) cm(-2)) carrier density with the density fluctuations becoming larger than the average density.