Synchrotron X-ray and ab initio studies of beta-Si3N4

Detection of sub-atomic movement in nanostructures

Nanoscale objects move fast and oscillate billions of times per second. Such movements occur naturally in the form of thermal (Brownian) motion while stimulated movements underpin the functionality of nano-mechanical sensors and active nano-(electro/opto) mechanical devices. Here we introduce a methodology for detecting such movements, based on the spectral analysis of secondary electron emission from moving nanostructures, that is sensitive to displacements of sub-atomic amplitude. We demonstrate the detection of nanowire Brownian oscillations of ∼10 pm amplitude and hyperspectral mapping of stimulated oscillations of setae on the body of a common flea. The technique opens a range of opportunities for the study of dynamic processes in materials science, nanotechnology and biology.

29Si NMR Chemical Shifts in Crystalline and Amorphous Silicon Nitrides

We investigate ²⁹Si nuclear magnetic resonance (NMR) chemical shifts, δ_iso, of silicon nitride. Our goal is to relate the local structure to the NMR signal and, thus, provide the means to extract more information from the experimental ²⁹Si NMR spectra in this family of compounds. We apply structural modeling and the gauge-included projector augmented wave (GIPAW) method within density functional theory (DFT) calculations. Our models comprise known and hypothetical crystalline Si₃N₄, as well as amorphous Si₃N₄ structures. We find good agreement with available experimental ²⁹Si NMR data for tetrahedral Si^[4] and octahedral Si^[6] in crystalline Si₃N₄, predict the chemical shift of a trigonal-bipyramidal Si^[5] to be about −120 ppm, and quantify the impact of Si-N bond lengths on ²⁹Si δ_iso. We show through computations that experimental ²⁹Si NMR data indicates that silicon dicarbodiimide, Si(NCN)₂ exhibits bent Si-N-C units with angles of about 143° in its structure. A detailed investigation of amorphous silicon nitride shows that an observed peak asymmetry relates to the proximity of a fifth N neighbor in non-bonding distance between 2.5 and 2.8 Å to Si. We reveal the impact of both Si-N(H)-Si bond angle and Si-N bond length on ²⁹Si δ_iso in hydrogenated silicon nitride structure, silicon diimide Si(NH)₂.

Better band gaps for wide-gap semiconductors from a locally corrected exchange-correlation potential that nearly eliminates self-interaction errors

This work constitutes a comprehensive and improved account of electronic-structure and mechanical properties of silicon-nitride ([Formula: see text] [Formula: see text]) polymorphs via van Leeuwen and Baerends (LB) exchange-corrected local density approximation (LDA) that enforces the exact exchange potential asymptotic behavior. The calculated lattice constant, bulk modulus, and electronic band structure of [Formula: see text] [Formula: see text] polymorphs are in good agreement with experimental results. We also show that, for a single electron in a hydrogen atom, spherical well, or harmonic oscillator, the LB-corrected LDA reduces the (self-interaction) error to exact total energy to  ∼10%, a factor of three to four lower than standard LDA, due to a dramatically improved representation of the exchange-potential.

La3Si6N11

Colorless transparent single crystals of trilanthanum hexa­silicon undeca­nitro­gen, La₃Si₆N₁₁, were prepared at 0.85 MPa of N₂ and 2273 K. The title compound is isotypic with Sm₃Si₆N₁₁. Silicon-centered nitro­gen tetra­hedra form a three-dimensional network structure by sharing their corners. Layers of one type of SiN₄ tetra­hedra and slabs composed of the two different La³⁺ cations and the other type of SiN₄ tetra­hedra are alternately stacked along the c axis of the tetra­gonal unit cell. The site symmetries of the two La³⁺ cations are are ..m and 4.., respectively.

Local symmetry breaking of a thin crystal structure of β-Si3N4 as revealed by spherical aberration corrected high-resolution transmission electron microscopy images

This report is an extension of the study for structural imaging of 5-6 nm thick β-Si(3)N(4) [0001] crystal with a spherical aberration corrected transmission electron microscope by Zhang and Kaiser [2009. Structure imaging of β-Si(3)N(4) by spherical aberration-corrected high-resolution transmission electron microscopy. Ultramicroscopy 109, 1114-1120]. In this work, a local symmetry breaking with an uneven resolution of dumbbells in the six-membered rings revealed in the reported images in the study of Zhang and Kaiser has been analyzed in detail. It is found that this local asymmetry in the image basically is not relevant to a slight mistilt of the specimen and/or a beam tilt (coma). Rather the certain variation of the tetrahedral bond length of Si-N(4) in the crystal structure is found to be responsible for the uneven resolution with a local structural variation from region to region. This characteristic of the variation is also supposed to give a distorted lattice of apparently 2°-2.5° deviations from the perfect hexagonal unit cell as observed in the reported image in the work of Zhang and Kaiser. It is discussed that this variation may prevail only in a thin specimen with a thickness ranging ~≤ 5-6 nm. At the same time, it is noted that the average of the bond length variation is close to the fixed length known in a bulk crystal of β-Si(3)N(4).

The effect of bias-temperature stress on Na+ incorporation into thin insulating films

The action of Na(+) incorporation into thin insulating films and transport therein under influence of a bias voltage and temperature (BT stress) is the subject of this work. Deposited onto highly n-doped Si wafers, the insulators get BT stressed and subsequently investigated by means of time-of-flight-secondary ion mass spectrometry (ToF-SIMS). A thin PMMA film, spin-coated onto the insulator, serves as host matrix for a defined amount of Na(+), provided via sodium triflate. Combining BT stress and ToF-SIMS depth profiling enables the unambiguous detection of Na(+), incorporated into the insulating material. The insulators of interest vary in their nitride content: SiO(2), SiO(x)N(y), and Si(3)N(4). For SiO(2), it is shown that once a threshold BT stress is exceeded, Na(+) gets quantitatively incorporated from PMMA into the underlying insulator, finally accumulating at the SiO(2)/Si interface. A quantitative assessment by combination of Butler-Volmer kinetics with hopping dynamics reveals activation energies of E(a) = 1.55 - 2.04 eV for Na(+) transport in SiO(2) with varying thickness. On the other hand, SiO(x)N(y) and Si(3)N(4) films show a different Na(+) incorporation characteristic in this type of experiment, which can be explained by the higher coordination of nitrogen and hence the reduced Na(+) permeability within these insulators.