Structure du nitrure de silicium α

Better band gaps for wide-gap semiconductors from a locally corrected exchange-correlation potential that nearly eliminates self-interaction errors

This work constitutes a comprehensive and improved account of electronic-structure and mechanical properties of silicon-nitride ([Formula: see text] [Formula: see text]) polymorphs via van Leeuwen and Baerends (LB) exchange-corrected local density approximation (LDA) that enforces the exact exchange potential asymptotic behavior. The calculated lattice constant, bulk modulus, and electronic band structure of [Formula: see text] [Formula: see text] polymorphs are in good agreement with experimental results. We also show that, for a single electron in a hydrogen atom, spherical well, or harmonic oscillator, the LB-corrected LDA reduces the (self-interaction) error to exact total energy to  ∼10%, a factor of three to four lower than standard LDA, due to a dramatically improved representation of the exchange-potential.

Sol-gel preparation of low oxygen content, high surface area silicon nitride and imidonitride materials

Reactions of Si(NHMe)4 with ammonia are effectively catalysed by small ammonium triflate concentrations, and can be used to produce free-standing silicon imide gels. Firing at various temperatures produces amorphous or partially crystallised silicon imidonitride/nitride samples with high surface areas and low oxygen contents. The crystalline phase is entirely α-Si3N4 and structural similarities are observed between the amorphous and crystallised materials.

Investigation of photoelectrical properties of α-Si3N4 nanobelts with surface modifications using first-principles calculations

The photoelectrical properties of α-Si₃N₄ nanobelts with surface H, F and Cl modifications are investigated using first-principles methods.

Parameters Affecting Pressureless Sintering of α'-Sialons with Lanthanide Modifying Cations

μ-silicon nitride forms a range of solid solution Mx(Si,Al)12(0,N)16 where x = 2 and M is Li+, Ca2+, y3+ or certain lanthanide cations. This paper reports the formation of Ln-α'-sialons by the reaction of Si3N4 with AIN and Ln2O3 where Ln=Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and Y. Transformation reactions of Nd, Sm, Gd, Ho, Er and Y cations occurring during liquid phase pressureless sintering are reported. The effects of the volume and viscosity of the liquid phase and the amountof secondary N-melilite on sintering are discussed.

Crystal Structure and Electron Density of α-Silicon Nitride: Experimental and Theoretical Evidence for the Covalent Bonding and Charge Transfer

Crystal structure and electron-density distribution of alpha-silicon nitride (alpha-Si3N4, space group: P31c) have been investigated by a combined technique of the Rietveld method, the maximum-entropy method (MEM), and MEM-based pattern-fitting of high-resolution synchrotron powder diffraction data. In combination with density functional theory calculations, the present experimental electron-density distribution of the alpha-Si3N4 indicates covalent bonds between Si and N atoms and charge transfer from the Si to N atom. The triangular distribution around the N atoms, which is attributable to the nitrogen sp2 hybridization for the nearest silicon and nitrogen pairs, was found in both experimental and theoretical electron density distributions. The minimum electron density in an intralayer Si-N bond was a little lower than that in an interlayer bond, which would be responsible for the inequality between elastic constants, C33 > C11. The present work suggests that the high bulk modulus of the alpha-Si3N4 is attributable to the high minimum electron density of the Si-N bond.