Simultaneous nanocalorimetry and fast XRD measurements to study the silicide formation in Pd/a-Si bilayers

In Situ and Real-Time Nanoscale Monitoring of Ultra-Thin Metal Film Growth Using Optical and Electrical Diagnostic Tools

Continued downscaling of functional layers for key enabling devices has prompted the development of characterization tools to probe and dynamically control thin film formation stages and ensure the desired film morphology and functionalities in terms of, e.g., layer surface smoothness or electrical properties. In this work, we review the combined use of in situ and real-time optical (wafer curvature, spectroscopic ellipsometry) and electrical probes for gaining insights into the early growth stages of magnetron-sputter-deposited films. Data are reported for a large variety of metals characterized by different atomic mobilities and interface reactivities. For fcc noble-metal films (Ag, Cu, Pd) exhibiting a pronounced three-dimensional growth on weakly-interacting substrates (SiO2, amorphous carbon (a-C)), wafer curvature, spectroscopic ellipsometry, and resistivity techniques are shown to be complementary in studying the morphological evolution of discontinuous layers, and determining the percolation threshold and the onset of continuous film formation. The influence of growth kinetics (in terms of intrinsic atomic mobility, substrate temperature, deposition rate, deposition flux temporal profile) and the effect of deposited energy (through changes in working pressure or bias voltage) on the various morphological transition thicknesses is critically examined. For bcc transition metals, like Fe and Mo deposited on a-Si, in situ and real-time growth monitoring data exhibit transient features at a critical layer thickness of ~2 nm, which is a fingerprint of an interface-mediated crystalline-to-amorphous phase transition, while such behavior is not observed for Ta films that crystallize into their metastable tetragonal β-Ta allotropic phase. The potential of optical and electrical diagnostic tools is also explored to reveal complex interfacial reactions and their effect on growth of Pd films on a-Si or a-Ge interlayers. For all case studies presented in the article, in situ data are complemented with and benchmarked against ex situ structural and morphological analyses.

Interfacial Silicide Formation and Stress Evolution during Sputter Deposition of Ultrathin Pd Layers on a-Si

Synchrotron experiments combining real-time stress, X-ray diffraction, and X-ray reflectivity measurements, complemented by in situ electron diffraction and photon electron spectroscopy measurements, revealed a detailed picture of the interfacial silicide formation during deposition of ultrathin Pd layers on amorphous silicon. Initially, an amorphous Pd₂Si interlayer is formed. At a critical thickness of 2.3 nm, this layer crystallizes and the resulting volume reduction leads to a tensile stress buildup. The [111] textured Pd₂Si layer continues to grow up to a thickness of ≈3.7 nm and is subsequently covered by a Pd layer with [111] texture. The tensile stress relaxes already during Pd₂Si growth. A comparison between the texture formation on SiO_x and a-Si shows that the silicide layer serves as a template for the Pd layer, resulting in a surprisingly narrow texture of only 3° after 800 s Pd deposition. The texture formation of Pd and Pd₂Si can be explained by the low lattice mismatch between Pd(111) and Pd₂Si(111). The combined experimental results indicate a similar interface formation mechanism for Pd on a-Si and c-Si, whereas the resulting silicide texture depends on the Si surface. A new strain relaxation mechanism via grain boundary diffusion is proposed, taking into account the influence of the thickness-dependent crystallization on the material transport through the silicide layer. In combination with the small lattice mismatch, the grain boundary diffusion facilitates the growth of Pd clusters, explaining thus the well-defined thickness of the interfacial silicide layer, which limits the miniaturization of self-organized silicide layers for microelectronic devices.

Microbial community and metabolic pathway succession driven by changed nutrient inputs in tailings: effects of different nutrients on tailing remediation

To solve the competition problem of acidophilic bacteria and sulfate-reducing bacteria in the practical application of mine tailing bioremediation, research into the mechanisms of using different nutrients to adjust the microbial community was conducted. Competition experiments involving acidophilic bacteria and sulfate-reducing bacteria were performed by supplementing the media with yeast extract, tryptone, lactate, and glucose. The physiochemical properties were determined, and the microbial community structure and biomass were investigated using MiSeq sequencing and qRT-PCR, respectively. Four nutrients had different remediation mechanisms and yielded different remediation effects. Yeast extract and tryptone (more than 1.6 g/L) promoted sulfate-reducing bacteria and inhibited acidophilic bacteria. Lactate inhibited both sulfate-reducing and acidophilic bacteria. Glucose promoted acidophilic bacteria more than sulfate-reducing bacteria. Yeast extract was the best choice for adjusting the microbial community and bioremediation, followed by tryptone. Lactate kept the physiochemical properties stable or made slight improvements; however, glucose was not suitable for mine tailing remediation. Different nutrients had significant effects on the abundance of the second enzyme of the sulfate-reducing pathway (p < 0.05), which is the rate-limiting step of sulfate-reducing pathways. Nutrients changed the remediation effects effectively by adjusting the microbial community and the abundance of the sulfate-reducing rate-limiting enzyme.