Development of a high-precision XYZ translator and estimation of beam profile of the vacuum ultraviolet and soft X-ray undulator beamline BL-13B at the Photon Factory

Beamline commissioning for microscopic measurements with ultraviolet and soft X-ray beam at the upgraded beamline BL-13B of the Photon Factory

Beamline 13 of the Photon Factory has been in operation since 2010 as a vacuum ultraviolet and soft X-ray undulator beamline for X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), and angle-resolved photoelectron spectroscopy (ARPES) experiments. The beamline and the end-station at branch B have been recently upgraded, enabling microscopic XPS, XAS, and ARPES measurements to be performed. In 2015, a planar undulator insertion device was replaced with an APPLE-II (advanced planar polarized light emitter II) undulator. This replacement allows use of linear, circular, and elliptical polarized light between 48 and 2000 eV with photon intensities of 10⁹-10¹³ photons s^-1. For microscopic measurements, a toroidal post-mirror was renewed to have more focused beam with profile sizes of 78 µm (horizontal) × 15 µm (vertical) and 84 µm × 11 µm at photon energies of 100 and 400 eV, respectively. A high-precision sample manipulator composed of an XYZ translator, a rotary feedthrough, and a newly developed goniometer, which is essential for microscopic measurements, has been used to control a sample specimen in six degrees of freedom, i.e. translation in the X, Y, and Z directions and rotation in the polar, azimuthal, and tilt directions. To demonstrate the performance of the focused beams, one- and two-dimensional XPS and XAS scan measurements of a copper grid have been performed. It was indicated from analysis of XPS and XAS intensity maps that the actual spatial resolution can be determined by the beam size.

Characteristic Electronic Structure of SnO Film Showing High Hole Mobility

Actual knowledge of the intrinsic electronic characteristics of p-type oxide semiconductors should help guide the design of innovative electronic devices. The electronic characteristics of oxide semiconductors in thin-film form potentially differ from those in the bulk form owing to lattice strain. In this Letter, we report on the empirical band structure of stannous oxide (SnO) film, which has been shown to have a higher hole mobility than the theoretically expected values for SnO in the bulk form. In vacuo angle-resolved photoemission spectroscopy measurements reveal that the uppermost valence band is anisotropic between the out-of-plane and in-plane directions, and more dispersive than the theoretical predictions. Our findings unveil the underlying mechanism of the semiconductor properties of SnO films and suggest a suitable device structure based on the electronic characteristics.