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Cao K, Zhu J, Wu Y, Ge M, Zhu Y, Qian J, Wang Y, Hu K, Lu J, Shen W, Liu L, Chen S. Suppressing Excess Lead Iodide Aggregation and Reducing N-Type Doping at Perovskite/HTL Interface for Efficient Perovskite Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2301822. [PMID: 37386817 DOI: 10.1002/smll.202301822] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2023] [Revised: 05/24/2023] [Indexed: 07/01/2023]
Abstract
Excess lead iodide (PbI2 ) aggregation at the charge carrier transport interface leads to energy loss and acts as unstable origins in perovskite solar cells (PSCs). Here, a strategy is reported to modulate the interfacial excess PbI2 by introducing π-conjugated small-molecule semiconductors 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (TAPC) into perovskite films through an antisolvent addition method. The coordination of TAPC to PbI units through the electron-donating triphenylamine groups and π-Pb2+ interactions allows for a compact perovskite film with reduced excess PbI2 aggregates. Besides, preferred energy level alignment is achieved due to the suppressed n-type doping effect at the hole transport layer (HTL) interfaces. As a result, the TAPC-modified PSC based on Cs0.05 (FA0.85 MA0.15 )0.95 Pb(I0.85 Br0.15 )3 triple-cation perovskite achieved an improved PCE from 18.37% to 20.68% and retained ≈90% of the initial efficiency after 30 days of aging under ambient conditions. Moreover, the TAPC-modified device based on FA0.95 MA0.05 PbI2.85 Br0.15 perovskite produced an improved efficiency of 23.15% compared to the control (21.19%). These results provide an effective strategy for improving the performance of PbI2 -rich PSCs.
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Affiliation(s)
- Kun Cao
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, P. R. China
| | - Jiajun Zhu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, P. R. China
| | - Yupei Wu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, P. R. China
| | - Mengru Ge
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, P. R. China
| | - Yuxuan Zhu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, P. R. China
| | - Jie Qian
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, P. R. China
| | - Yulong Wang
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Kaiwen Hu
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Jianfeng Lu
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Wei Shen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, P. R. China
| | - Lihui Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, P. R. China
| | - Shufen Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, P. R. China
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Pan T, Liu S, Zhang L, Xie W, Yu C. A flexible, multifunctional, optoelectronic anticounterfeiting device from high-performance organic light-emitting paper. LIGHT, SCIENCE & APPLICATIONS 2022; 11:59. [PMID: 35288540 PMCID: PMC8921225 DOI: 10.1038/s41377-022-00760-5] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2021] [Revised: 02/28/2022] [Accepted: 03/02/2022] [Indexed: 05/19/2023]
Abstract
As a primary anticounterfeiting technology, most paper anticounterfeiting devices take advantage of photoresponsive behaviors of certain security materials or structures, thus featuring low-security threshold, which has been a critical global issue. To incorporate optoelectronic devices into existing anticounterfeiting technology suggests a feasible avenue to address this challenge. Here we report a high-performance organic light-emitting paper-based flexible anticounterfeiting (FAC) device with multiple stimuli-responsiveness, including light, electricity, and their combination. Without sacrificing the preexisted security information on the paper, we fabricate FAC device in a facile, low-cost yet high-fidelity fashion by integrating patterned electro-responsive and photo-responsive organic emitters onto paper substrates. By introducing optical microcavities, the FAC device shows considerable color shift upon different viewing angle and applied voltage, which is easily discernible by naked eyes. Notably, the FAC device is bendable, unclonable, and durable (a half-lifetime over 4000 hours at 100 cd m-2).
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Affiliation(s)
- Teng Pan
- State Key Laboratory of Integrated Optoelectronics, College of Electronics Science and Engineering, Jilin University, 130012, Changchun, China
| | - Shihao Liu
- State Key Laboratory of Integrated Optoelectronics, College of Electronics Science and Engineering, Jilin University, 130012, Changchun, China
| | - Letian Zhang
- State Key Laboratory of Integrated Optoelectronics, College of Electronics Science and Engineering, Jilin University, 130012, Changchun, China
| | - Wenfa Xie
- State Key Laboratory of Integrated Optoelectronics, College of Electronics Science and Engineering, Jilin University, 130012, Changchun, China.
| | - Cunjiang Yu
- Department of Engineering Science and Mechanics, Department of Biomedical Engineering, Materials Research Institute, Pennsylvania State University, 16802, University Park, USA.
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