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Pei W, Wu X, Zhang X, Zha A, Tian S, Wang Y, Gao X. A Pre-gelled EEG Electrode and Its Application in SSVEP-based BCI. IEEE Trans Neural Syst Rehabil Eng 2022; 30:843-850. [PMID: 35324444 DOI: 10.1109/tnsre.2022.3161989] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Abstract
Electroencephalogram (EEG) electrodes are critical devices for brain-computer interface and neurofeedback. A pre-gelled (PreG) electrode was developed in this paper for EEG signal acquisition with a short installation time and good comfort. A hydrogel probe was placed in advance on the Ag/AgCl electrode before wearing the EEG headband instead of a time-consuming gel injection after wearing the headband. The impedance characteristics were compared between the PreG electrode and the wet electrode. The PreG electrode and the wet electrode performed the Brain-Computer Interface (BCI) application experiment to evaluate their performance. The average impedance of the PreG electrode can be decreased to 43 kΩ or even lower, which is higher than the wet electrode with an impedance of 8 kΩ. However, there is no significant difference in classification accuracy and information transmission rate (ITR) between the PreG electrode and the wet electrode in a 40 target BCI system based on Steady State Visually Evoked Potential (SSVEP). This study validated the efficiency of the proposed PreG electrode in the SSVEP-based BCI. The proposed PreG electrode will be an excellent substitute for wet electrodes in an actual application with convenience and good comfort.
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Xing X, Wang Y, Pei W, Guo X, Liu Z, Wang F, Ming G, Zhao H, Gui Q, Chen H. A High-Speed SSVEP-Based BCI Using Dry EEG Electrodes. Sci Rep 2018; 8:14708. [PMID: 30279463 PMCID: PMC6168577 DOI: 10.1038/s41598-018-32283-8] [Citation(s) in RCA: 53] [Impact Index Per Article: 7.6] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/07/2018] [Accepted: 07/06/2018] [Indexed: 11/24/2022] Open
Abstract
A high-speed steady-state visual evoked potentials (SSVEP)-based brain-computer interface (BCI) system using dry EEG electrodes was demonstrated in this study. The dry electrode was fabricated in our laboratory. It was designed as claw-like structure with a diameter of 14 mm, featuring 8 small fingers of 6 mm length and 2 mm diameter. The structure and elasticity can help the fingers pass through the hair and contact the scalp when the electrode is placed on head. The electrode was capable of recording spontaneous EEG and evoked brain activities such as SSVEP with high signal-to-noise ratio. This study implemented a twelve-class SSVEP-based BCI system with eight electrodes embedded in a headband. Subjects also completed a comfort level questionnaire with the dry electrodes. Using a preprocessing algorithm of filter bank analysis (FBA) and a classification algorithm based on task-related component analysis (TRCA), the average classification accuracy of eleven participants was 93.2% using 1-second-long SSVEPs, leading to an average information transfer rate (ITR) of 92.35 bits/min. All subjects did not report obvious discomfort with the dry electrodes. This result represented the highest communication speed in the dry-electrode based BCI systems. The proposed system could provide a comfortable user experience and a stable control method for developing practical BCIs.
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Affiliation(s)
- Xiao Xing
- The State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- The University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yijun Wang
- The State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
- The University of Chinese Academy of Sciences, Beijing, 100049, China.
- CAS Center for Excellence in Brain Science and Intelligence Technology, Shanghai, China.
| | - Weihua Pei
- The State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
- The University of Chinese Academy of Sciences, Beijing, 100049, China.
- CAS Center for Excellence in Brain Science and Intelligence Technology, Shanghai, China.
| | - Xuhong Guo
- The State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- The University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhiduo Liu
- The State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- The University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fei Wang
- The State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- The University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Gege Ming
- The State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- The University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hongze Zhao
- The State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- The University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qiang Gui
- The State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Hongda Chen
- The State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- The University of Chinese Academy of Sciences, Beijing, 100049, China
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