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Han Z, Chen S, Liu H, Wang S, Ma B, Chen R, Fu X. A Novel DTSCR Structure with High Holding Voltage and Enhanced Current Discharge Capability for 28 nm CMOS Technology ESD Protection. MICROMACHINES 2023; 15:96. [PMID: 38258215 PMCID: PMC10819261 DOI: 10.3390/mi15010096] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Revised: 12/27/2023] [Accepted: 12/30/2023] [Indexed: 01/24/2024]
Abstract
To cope with the much narrower ESD design window in 28 nm CMOS technology, a novel diode-triggered silicon-controlled rectifier with an extra discharge path (EDP-DTSCR) for ESD protection is proposed in this paper. Compared with the traditional DTSCR, the proposed DTSCR has an enhanced current discharge capability that is achieved by creating a slave SCR path in parallel with the master SCR path. Moreover, the improved triggering and holding characteristic can be obtained by the proposed EDP-DTSCR. By sharing the anode emitter junction, a slave SCR path is constructed that is symmetrical to the position of the master SCR path to add an additional ESD discharge path to the EDP-DTSCR. In this way, the current discharge capability of the entire device is obviously improved. The TCAD simulation result shows that the proposed device has a remarkably lower on-resistance compared with the traditional DTSCR and the DTSCR with p-type guard ring (PGR-DTSCR). In addition, it is structurally optimized to further increase the holding voltage and reduce the trigger voltage to improve the anti-latching capability of the device, which is more conducive to the ESD protection window application of 28 nm CMOS technology.
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Affiliation(s)
- Zeen Han
- Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, China; (Z.H.); (S.W.); (B.M.); (R.C.)
| | - Shupeng Chen
- Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, China; (Z.H.); (S.W.); (B.M.); (R.C.)
| | - Hongxia Liu
- Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, China; (Z.H.); (S.W.); (B.M.); (R.C.)
| | - Shulong Wang
- Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, China; (Z.H.); (S.W.); (B.M.); (R.C.)
| | - Boyang Ma
- Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, China; (Z.H.); (S.W.); (B.M.); (R.C.)
| | - Ruibo Chen
- Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, China; (Z.H.); (S.W.); (B.M.); (R.C.)
| | - Xiaojun Fu
- National Key Laboratory of Integrated Circuits and Microsystems, Chongqing 401332, China;
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Chen R, Wei H, Liu H, Hou F, Xiang Q, Du F, Yan C, Gao T, Liu Z. MOSs-String-Triggered Silicon-Controlled Rectifier (MTSCR) ESD Protection Device for 1.8 V Application. MICROMACHINES 2023; 14:632. [PMID: 36985040 PMCID: PMC10056861 DOI: 10.3390/mi14030632] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/17/2023] [Revised: 03/05/2023] [Accepted: 03/07/2023] [Indexed: 06/18/2023]
Abstract
In this work, a new low voltage-triggered silicon-controlled rectifier named MTSCR is realized in a 65 nm CMOS process for low voltage-integrated circuits electrostatic discharge (ESD) protections. The MTSCR incorporates an external NMOSs-string, which drives the internal NMOS (INMOS) of MTSCR to turn on, and then the INMOS drive SCR structure to turn on. Compared with the existing low trigger voltage (Vt1) ESD component named diodes-string-triggered SCR (DTSCR), the MTSCR can realize the same low Vt1 characteristic but less area penalty of ~44.3% reduction. The results of the transmission line pulsing (TLP) measurement shows that the MTSCR possesses above 2.42 V holding voltage (Vh) and a low Vt1 of ~5.03 V, making it very suitable for the ESD protections for 1.8 V input/output (I/O) ports in CMOS technologies.
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Affiliation(s)
- Ruibo Chen
- Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
| | - Hao Wei
- Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
| | - Hongxia Liu
- Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
| | - Fei Hou
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610056, China
| | - Qi Xiang
- Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
| | - Feibo Du
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610056, China
| | - Cong Yan
- Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
| | - Tianzhi Gao
- Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
| | - Zhiwei Liu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610056, China
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