Silicon Nanowires Field Effect Transistors: A Comparative Sensing Performance between Electrical Impedance and Potentiometric Measurement Paradigms

Potentiometric sensors based on silicon nanowire field effect transistors (SiNW FETs) typically display exquisite sensitivities, but their bioanalytical implementation is limited due to the need for stringent measurement conditions and high-precision readout units. An alternative operation principle where SiNW FETs are operated in a frequency-domain electrical impedimetric approach is promising. However, to date only limited data is available in regard to the sensing performance and translational relevance of this novel approach in comparison to the standard charge detection paradigm. We demonstrate the feasibility of conducting electrical impedimetric FET measurements with a portable unit for the ultrasensitive detection of cancer biomarkers in biospecimens. Compared to standard potentiometric measurements, electrical impedimetric FET measurements yielded significant improvements in biosensing performances, including the limit of detection, sensing resolution, and dynamic range.

Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors

Silicon nanowire-based field-effect transistors (SiNW FETs) have demonstrated the ability of ultrasensitive detection of a wide range of biological and chemical targets. The detection is based on the variation of the conductance of a nanowire channel, which is caused by the target substance. This is seen in the voltage-current behavior between the drain and source. Some current, known as leakage current, flows between the gate and drain, and affects the current between the drain and source. Studies have shown that leakage current is frequency dependent. Measurements of such frequency characteristics can provide valuable tools in validating the functionality of the used transistor. The measurements can also be an advantage in developing new detection technologies utilizing SiNW FETs. The frequency-domain responses can be measured by using a commercial sine-sweep-based network analyzer. However, because the analyzer takes a long time, it effectively prevents the development of most practical applications. Another problem with the method is that in order to produce sinusoids the signal generator has to cope with a large number of signal levels. This may become challenging in developing low-cost applications. This paper presents fast, cost-effective frequency-domain methods with which to obtain the responses within seconds. The inverse-repeat binary sequence (IRS) is applied and the admittance spectroscopy between the drain and source is computed through Fourier methods. The methods is verified by experimental measurements from an n-type SiNW FET.