Lu W, Wang X, Ma Y, Grasso S, Xu M. A bi-layer buffer system AlN/Al
1−xIn
xN to enable the growth of high crystal quality Al
0.36In
0.64N thin films on Si (111).
CrystEngComm 2019. [DOI:
10.1039/c9ce00813f]
[Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We report a unique AlN/AlInN bi-layer buffer design to enable the growth of textured c-axis wurtzite Al0.36In0.64N epilayer on a Si (111) substrate, which creates the possibility to grow high crystal quality Al0.36In0.64N.
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