Comparative study of adsorptions, reactions and electronic properties of U atoms on Cu(111), Ag(111), Au(111) and Ru(0001) surfaces

The mysterious properties of individual U atoms on transition metal surfaces play indispensable parts in supplementing our understanding of uranium-transition metal systems, which are important subjects for both nuclear energy applications and fundamental scientific studies. By using scanning tunneling microscopy and density functional theory calculations, the adsorptions, reactions and electronic properties of individual U atoms on Cu(111), Ag(111), Au(111) and Ru(0001) surfaces were comparatively studied for the first time in this work. Upon the deposition of a small amount of U onto Cu(111) or Ag(111) at 8 K, individual U atoms show relatively high activity and can either be adsorbed on intact substrate surfaces or induce various surface vacancies surrounded by clusters of substrate atoms. By contrast, the majority of U atoms tend to dispersedly adsorb on intact surfaces of Au(111) and Ru(0001) rather than producing surface vacancies at the same temperature. In all cases, Kondo resonance manifested as asymmetric dip feature around Fermi energy is only observed in the differential tunneling conductance spectra of single U adatoms on Ag(111).

Development of an ion beam alignment system for real-time scanning tunneling microscope observation of dopant-ion irradiation

An ion beam alignment system has been developed in order to realize real-time scanning tunneling microscope (STM) observation of "dopant-ion" irradiation that has been difficult due to the low emission intensity of the liquid-metal-ion-source (LMIS) containing dopant atoms. The alignment system is installed in our original ion gun and STM combined system (IG/STM) which is used for in situ STM observation during ion irradiation. By using an absorbed electron image unit and a dummy sample, ion beam alignment operation is drastically simplified and accurized. We demonstrate that sequential STM images during phosphorus-ion irradiation are successfully obtained for sample surfaces of Si(111)-7x7 at room temperature and a high temperature of 500 degrees C. The LMIS-IG/STM equipped with the developed ion beam alignment system would be a powerful tool for microscopic investigation of the dynamic processes of ion irradiation.