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Number Cited by Other Article(s)
1
Fluorine-based plasmas: Main features and application in micro-and nanotechnology and in surface treatment. CR CHIM 2018. [DOI: 10.1016/j.crci.2018.01.009] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
2
Plasma reactor dry cleaning strategy after TaC, MoN, WSi, W, and WN etching processes. ACTA ACUST UNITED AC 2009. [DOI: 10.1116/1.3058710] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
3
Poly-Si∕TiN∕HfO[sub 2] gate stack etching in high-density plasmas. ACTA ACUST UNITED AC 2007. [DOI: 10.1116/1.2732736] [Citation(s) in RCA: 43] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
4
Line edge roughness characterization with a three-dimensional atomic force microscope: Transfer during gate patterning processes. ACTA ACUST UNITED AC 2005. [DOI: 10.1116/1.2101789] [Citation(s) in RCA: 24] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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