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1
Šašić O, Dujko S, Makabe T, Petrović Z. A set of cross sections and transport coefficients for electrons in HBr. Chem Phys 2012. [DOI: 10.1016/j.chemphys.2011.08.019] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/17/2022]
2
Surface roughness generated by plasma etching processes of silicon. ACTA ACUST UNITED AC 2008. [DOI: 10.1116/1.2932091] [Citation(s) in RCA: 45] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
3
Poly-Si∕TiN∕HfO[sub 2] gate stack etching in high-density plasmas. ACTA ACUST UNITED AC 2007. [DOI: 10.1116/1.2732736] [Citation(s) in RCA: 43] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
4
Impact of chemistry on profile control of resist masked silicon gates etched in high density halogen-based plasmas. ACTA ACUST UNITED AC 2003. [DOI: 10.1116/1.1612932] [Citation(s) in RCA: 46] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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