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Wen ZL, Cao XN, Zhou CL, Wang WJ. Influence of Pressure on SiN x:H Film by LF-PECVD. CHINESE J CHEM PHYS 2012. [DOI: 10.1088/1674-0068/25/01/110-114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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Stavola M, Jiang F, Kleekajai S, Wen L, Peng C, Yelundur V, Rohatgi A, Hahn G, Carnel L, Kalejs J. Hydrogen Passivation of Defects in Crystalline Silicon Solar Cells. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-1210-q01-01] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
AbstractHydrogen is commonly introduced into silicon solar cells to reduce the deleterious effects of defects and to increase cell efficiency. We have developed strategies by which hydrogen in silicon can be detected by IR spectroscopy with high sensitivity. The introduction of hydrogen into Si by the post-deposition annealing of a hydrogen-rich, SiNx coating has been investigated to determine hydrogen's concentration and penetration depth. Different hydrogenation processes were studied so that their effectiveness for the passivation of bulk defects could be compared. The best conditions investigated in our experiments yielded a hydrogen concentration near 1015 cm-3 and a diffusion depth consistent with the diffusivity of H found by Van Wieringen and Warmoltz.
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