Application of electron tomography for comprehensive determination of III-V interface properties

We present an electron tomography method for the comprehensive characterization of buried III-V semiconductor interfaces that is based on chemical-sensitive high-angle annular dark-field scanning transmission electron microscopy. For this purpose, an (Al,Ga)As/GaAs multi-layer system grown by molecular beam epitaxy is used as a case study. Isoconcentration surfaces are exploited to obtain topographic height maps of 120 nm × 120 nm area, revealing the interface morphology. By applying the height-height correlation function, we are able to determine important interface properties like root mean square roughness and lateral correlation length of various interfaces of the (Al,Ga)As/GaAs system characterized by different Al concentrations. Height-difference maps based on isosurfaces corresponding to 30% and 70% of the total compositional difference at the interfaces are used to create topographic maps of the interface width and to calculate an average interface width. This methodology proves differences in the properties of direct and inverted interfaces and allows the observation of interfacial anisotropies.

Composition fluctuations in dilute nitride (Ga,In)(N,As)/GaAs heterostructures measured by low-loss electron energy-loss spectroscopy

We report on the investigation of composition fluctuations in epitaxially grown (Ga,In)(N,As) epilayers on GaAs(001) substrates by using electron energy-loss spectroscopy (EELS). The N and In concentrations are determined locally with a probe size of about 8 nm from the low-loss EELS measurements. We demonstrate that the small amount of N incorporating in dilute nitride alloys can be measured quantitatively by the plasmon energy shift with respect to a GaAs reference, and that the In content is analyzed simultaneously from the In 4d transitions, which have been isolated from the overlapping Ga 3d transitions. Our spatially resolved EELS results are utilized to discuss the origin of the inherent composition fluctuations and their influences on the morphological instabilities during epitaxial growth.