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Ridderbos J, Brauns M, Shen J, de Vries FK, Li A, Bakkers EPAM, Brinkman A, Zwanenburg FA. Josephson Effect in a Few-Hole Quantum Dot. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1802257. [PMID: 30260519 DOI: 10.1002/adma.201802257] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/09/2018] [Revised: 07/11/2018] [Indexed: 06/08/2023]
Abstract
A Ge-Si core-shell nanowire is used to realize a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field, access to two distinct regimes, not combined before in a single device, is gained: in the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion, the supercurrent is carried by single-particle levels of a strongly coupled quantum dot operating in the few-hole regime. These results establish Ge-Si nanowires as an important platform for hybrid superconductor-semiconductor physics and Majorana fermions.
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Affiliation(s)
- Joost Ridderbos
- MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede, The Netherlands
| | - Matthias Brauns
- MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede, The Netherlands
| | - Jie Shen
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA, Delft, The Netherlands
| | - Folkert K de Vries
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA, Delft, The Netherlands
| | - Ang Li
- Department of Applied Physics, Eindhoven University of Technology, Postbox 513, 5600 MB, Eindhoven, The Netherlands
| | - Erik P A M Bakkers
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA, Delft, The Netherlands
- Department of Applied Physics, Eindhoven University of Technology, Postbox 513, 5600 MB, Eindhoven, The Netherlands
| | - Alexander Brinkman
- MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede, The Netherlands
| | - Floris A Zwanenburg
- MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede, The Netherlands
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De Franceschi S, Kouwenhoven L, Schönenberger C, Wernsdorfer W. Hybrid superconductor-quantum dot devices. NATURE NANOTECHNOLOGY 2010; 5:703-711. [PMID: 20852639 DOI: 10.1038/nnano.2010.173] [Citation(s) in RCA: 99] [Impact Index Per Article: 7.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2023]
Abstract
Advances in nanofabrication techniques have made it possible to make devices in which superconducting electrodes are connected to non-superconducting nanostructures such as quantum dots. The properties of these hybrid devices result from a combination of a macroscopic quantum phenomenon involving large numbers of electrons (superconductivity) and the ability to control single electrons, offered by quantum dots. Here we review research into electron transport and other fundamental processes that have been studied in these devices. We also describe potential applications, such as a transistor in which the direction of a supercurrent can be reversed by adding just one electron to a quantum dot.
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Affiliation(s)
- Silvano De Franceschi
- SPSMS/LaTEQS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France.
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