Dramatic reduction of the effect of nanoconfinement on the glass transition of polymer films via addition of small-molecule diluent

The effect of nanoconfinement on the glass transition temperature T(g) in thin polymer films is studied as a function of added small-molecule diluent or plasticizer. The decrease [increase] in T(g) found in nanoconfined, neat polystyrene [poly(2-vinyl pyridine)] is suppressed by added diluent, with 13-20 nm thick polystyrene films exhibiting bulk T(g) upon addition of 9 wt % pyrene or 4 wt % dioctylphthalate [corrected]. This is explained by a connection between the size scale of the cooperative dynamics associated with T(g), which decreases with added diluent, and the size scale of the nanoconfinement effect.

FT-IR study of a chemically amplified resist for X-ray lithography

Microelectronic devices for future applications demand lithographic performance that falls within the 0.10 microm region and below. Chemically amplified resists (CARs), such as the positive tone commercial UVIII resist, offer a substantial gain in sensitivity, resolution, and process efficiency in deep ultraviolet, e-beam, and X-ray lithographies. In this work, the UVIII resist is characterized for X-ray lithographic applications by studying the "deprotection" or acid generation-diffusion process of the resist under different conditions of post-exposure bake (PEB) temperature and time, and of X-ray exposure dose. The X-ray irradiation from a copper anode at a wavelength of 1.33 nm was at an intensity of 30 microW/cm2 on the resist surface. The deprotection process of the resist during PEB was accurately monitored by using Fourier transform infrared (FT-IR) spectroscopy. The infrared absorption peaks at 1151, 1369, and 2977 cm(-1) in the spectrum of the UVIII resist were found to be useful indicators for the completion of deprotection. Results of the experiments showed that the performance of UVIII could be optimized at the PEB temperature of 140 degrees C, a time of 2 min, and X-ray exposure dose of 12 mJ/cm2. The change in resist thickness after PEB was also measured. The results were confirmed by scanning electron microscopy (SEM) in which a test structure as small as 0.12 microm was obtained in a 1-microm-thick UVIII resist layer.