Investigating the impact of SEM chamber conditions and imaging parameters on contact resistance of in situ nanoprobing

In this paper, we investigate the impact of vacuum chamber conditions (cleanliness level and vacuum pressure) and imaging parameters (magnification and acceleration voltage) of scanning electron microscopy (SEM) on the contact resistance of two-point in situ nanoprobing of nanomaterials. Using two typical types of conductive nanoprobe, two-point nanoprobing is performed on silicon nanowires, during which changing trends of the nanoprobing contact resistance with the SEM chamber conditions and imaging parameters are quantified. The mechanisms underlying the experimental observations are also explained. Through systematically adjusting the experimental parameters, the probe-sample contact resistance is significantly reduced from the mega-ohm level to the kilo-ohm level. The experimental results can serve as a guideline to evaluate electrical contacts of nanoprobing and instruct how to reduce the contact resistance in SEM-based, two-point nanoprobing.

Quantitative Conductive Atomic Force Microscopy on Single-Walled Carbon Nanotube-Based Polymer Composites

Conductive atomic force microscopy (C-AFM) is a valuable technique for correlating the electrical properties of a material with its topographic features and for identifying and characterizing conductive pathways in polymer composites. However, aspects such as compatibility between tip material and sample, contact force and area between the tip and the sample, tip degradation and environmental conditions render quantifying the results quite challenging. This study aims at finding the suitable conditions for C-AFM to generate reliable, reproducible, and quantitative current maps that can be used to calculate the resistance in each point of a single-walled carbon nanotube (SWCNT) network, nonimpregnated as well as impregnated with a polymer. The results obtained emphasize the technique's limitation at the macroscale as the resistance of these highly conductive samples cannot be distinguished from the tip-sample contact resistance. Quantitative C-AFM measurements on thin composite sections of 150-350 nm enable the separation of sample and tip-sample contact resistance, but also indicate that these sections are not representative for the overall SWCNT network. Nevertheless, the technique was successfully used to characterize the local electrical properties of the composite material, such as sample homogeneity and resistance range of individual SWCNT clusters, at the nano- and microscale.

The electrically detected magnetic resonance microscope: combining conductive atomic force microscopy with electrically detected magnetic resonance

We present the design and implementation of a scanning probe microscope, which combines electrically detected magnetic resonance (EDMR) and (photo-)conductive atomic force microscopy ((p)cAFM). The integration of a 3-loop 2-gap X-band microwave resonator into an AFM allows the use of conductive AFM tips as a movable contact for EDMR experiments. The optical readout of the AFM cantilever is based on an infrared laser to avoid disturbances of current measurements by absorption of straylight of the detection laser. Using amorphous silicon thin film samples with varying defect densities, the capability to detect a spatial EDMR contrast is demonstrated. Resonant current changes as low as 20 fA can be detected, allowing the method to realize a spin sensitivity of 8×10(6)spins/√Hz at room temperature.

Electrical property heterogeneity at transparent conductive oxide/organic semiconductor interfaces: mapping contact ohmicity using conducting-tip atomic force microscopy

We demonstrate mapping of electrical properties of heterojunctions of a molecular semiconductor (copper phthalocyanine, CuPc) and a transparent conducting oxide (indium-tin oxide, ITO), on 20-500 nm length scales, using a conductive-probe atomic force microscopy technique, scanning current spectroscopy (SCS). SCS maps are generated for CuPc/ITO heterojunctions as a function of ITO activation procedures and modification with variable chain length alkyl-phosphonic acids (PAs). We correlate differences in small length scale electrical properties with the performance of organic photovoltaic cells (OPVs) based on CuPc/C(60) heterojunctions, built on these same ITO substrates. SCS maps the "ohmicity" of ITO/CuPc heterojunctions, creating arrays of spatially resolved current-voltage (J-V) curves. Each J-V curve is fit with modified Mott-Gurney expressions, mapping a fitted exponent (γ), where deviations from γ = 2.0 suggest nonohmic behavior. ITO/CuPc/C(60)/BCP/Al OPVs built on nonactivated ITO show mainly nonohmic SCS maps and dark J-V curves with increased series resistance (R(S)), lowered fill-factors (FF), and diminished device performance, especially near the open-circuit voltage. Nearly optimal behavior is seen for OPVs built on oxygen-plasma-treated ITO contacts, which showed SCS maps comparable to heterojunctions of CuPc on clean Au. For ITO electrodes modified with PAs there is a strong correlation between PA chain length and the degree of ohmicity and uniformity of electrical response in ITO/CuPc heterojunctions. ITO electrodes modified with 6-8 carbon alkyl-PAs show uniform and nearly ohmic SCS maps, coupled with acceptable CuPc/C(60)OPV performance. ITO modified with C14 and C18 alkyl-PAs shows dramatic decreases in FF, increases in R(S), and greatly enhanced recombination losses.

Ultra-high vacuum scanning thermal microscopy for nanometer resolution quantitative thermometry

Understanding energy dissipation at the nanoscale requires the ability to probe temperature fields with nanometer resolution. Here, we describe an ultra-high vacuum (UHV)-based scanning thermal microscope (SThM) technique that is capable of quantitatively mapping temperature fields with ∼15 mK temperature resolution and ∼10 nm spatial resolution. In this technique, a custom fabricated atomic force microscope (AFM) cantilever, with a nanoscale Au-Cr thermocouple integrated into the tip of the probe, is used to measure temperature fields of surfaces. Operation in an UHV environment eliminates parasitic heat transport between the tip and the sample enabling quantitative measurement of temperature fields on metal and dielectric surfaces with nanoscale resolution. We demonstrate the capabilities of this technique by directly imaging thermal fields in the vicinity of a 200 nm wide, self-heated, Pt line. Our measurements are in excellent agreement with computational results-unambiguously demonstrating the quantitative capabilities of the technique. UHV-SThM techniques will play an important role in the study of energy dissipation in nanometer-sized electronic and photonic devices and the study of phonon and electron transport at the nanoscale.

Nanoscale thermometry using point contact thermocouples

Probing temperature fields with nanometer resolution is critical to understanding nanoscale thermal transport as well as dissipation in nanoscale devices. Here, we demonstrate an atomic force microscope (AFM)-based technique capable of mapping temperature fields in metallic films with approximately 10 mK temperature resolution and <100 nm spatial resolution. A platinum-coated AFM cantilever placed in soft mechanical contact with a metallic (gold) surface is used to sequentially create point contact thermocouples on a grid. The local temperature at each point contact is obtained by measuring the thermoelectric voltage of the platinum-gold point contact and relating it to the local temperature. These results demonstrate a direct measurement of the temperature field of a metallic surface without using specially fabricated scanning temperature-probes.