Fission converter and metal-oxide-semiconductor field effect transistor study of thermal neutron flux distribution in an epithermal neutron therapy beam

Feasibility study of optical imaging of the boron-dose distribution by a liquid scintillator in a clinical boron neutron capture therapy field

BACKGROUND

Evaluation of the boron dose is essential for boron neutron capture therapy (BNCT). Nevertheless, a direct evaluation method for the boron-dose distribution has not yet been established in the clinical BNCT field. To date, even in quality assurance (QA) measurements, the boron dose has been indirectly evaluated from the thermal neutron flux measured using the activation method with gold foil or wire and an assumed boron concentration in the QA procedure. Recently, we successfully conducted optical imaging of the boron-dose distribution using a cooled charge-coupled device (CCD) camera and a boron-added liquid scintillator at the E-3 port facility of the Kyoto University Research Reactor (KUR), which supplies an almost pure thermal neutron beam with very low gamma-ray contamination. However, in a clinical accelerator-based BNCT facility, there is a concern that the boron-dose distribution may not be accurately extracted because the unwanted luminescence intensity, which is irrelevant to the boron dose is expected to increase owing to the contamination of fast neutrons and gamma rays.

PURPOSE

The purpose of this research was to study the validity of a newly proposed method using a boron-added liquid scintillator and a cooled CCD camera to directly observe the boron-dose distribution in a clinical accelerator-based BNCT field.

METHOD

A liquid scintillator phantom with 10 B was prepared by filling a small quartz glass container with a commercial liquid scintillator and boron-containing material (trimethyl borate); its natural boron concentration was 1 wt%. Luminescence images of the boron-neutron capture reaction were obtained in a water tank at several different depths using a CCD camera. The contribution of background luminescence, mainly due to gamma rays, was removed by subtracting the luminescence images obtained using another sole liquid scintillator phantom (natural boron concentration of 0 wt%) at each corresponding depth, and a depth profile of the boron dose with several discrete points was obtained. The obtained depth profile was compared with that of calculated boron dose, and those of thermal neutron flux which were experimentally measured or calculated using a Monte Carlo code.

RESULTS

The depth profile evaluated from the subtracted images indicated reasonable agreement with the calculated boron-dose profile and thermal neutron flux profiles, except for the shallow region. This discrepancy is thought to be due to the contribution of light reflected from the tank wall. The simulation results also demonstrated that the thermal neutron flux would be severely perturbed by the 10 B-containing phantom if a relatively larger container was used to evaluate a wide range of boron-dose distributions in a single shot. This indicates a trade-off between the luminescence intensity of the 10 B-added phantom and its perturbation effect on the thermal neutron flux.

CONCLUSIONS

Although a partial discrepancy was observed, the validity of the newly proposed boron-dose evaluation method using liquid-scintillator phantoms with and without 10 B was experimentally confirmed in the neutron field of an accelerator-based clinical BNCT facility. However, this study has some limitations, including the trade-off problem stated above. Therefore, further studies are required to address these limitations.

Neutron-gamma dosimetry for BNCT using field oxide transistors with gadolinium oxide as neutron converter layer

PURPOSE

A new type of electronic dosimeter is presented, capable of discerning between the doses of gamma photons and neutrons in a mixed beam as found in boron neutron capture therapy (BNCT). We introduce a real-time dosimeter based on a thick gate field oxide field effect transistor (FOXFET) covered with a neutron converter layer containing gadolinium.

METHODS

To sensitize the FOXFET dosimeter to neutron fluxes, a converter layer containing gadolinium oxide particles embedded in photoresines was deposited over the sensor surface. Mixed neutron-gamma field configurations with different neutron energy spectra were used to assess the FOXFET response, considering different thicknesses of the neutron converter layer.

RESULTS

The total gamma sensitivity of the devices resulted to be 43 mV/Gy. The responses of sensors with different converter layer thicknesses irradiated with different neutron spectra are simulated using GEANT4 code. The response to photons is not significantly modified with thin conversion layers when used in water medium.

CONCLUSIONS

A real-time dosimeter comprising a pair of FOXFET sensors-only one of them with a gadolinium neutron converter layer-allows the simultaneous measurement of gamma dose and neutron flux during BNCT irradiations.

Application of an ultraminiature thermal neutron monitor for irradiation field study of accelerator-based neutron capture therapy

Phantom experiments to evaluate thermal neutron flux distribution were performed using the Scintillator with Optical Fiber (SOF) detector, which was developed as a thermal neutron monitor during boron neutron capture therapy (BNCT) irradiation. Compared with the gold wire activation method and Monte Carlo N-particle (MCNP) calculations, it was confirmed that the SOF detector is capable of measuring thermal neutron flux as low as 10(5) n/cm(2)/s with sufficient accuracy. The SOF detector will be useful for phantom experiments with BNCT neutron fields from low-current accelerator-based neutron sources.

Miniature semiconductor detectors for in vivo dosimetry

Silicon mini-semiconductor detectors are found in wide applications for in vivo personal dosimetry and dosimetry and microdosimetry of different radiation oncology modalities. These applications are based on integral and spectroscopy modes of metal oxide semiconductor field effect transistor and silicon p-n junction detectors. The advantages and limitations of each are discussed.