Image guided IMRT dosimetry using anatomy specific MOSFET configurations

MOSFET dosimeter characterization in MR-guided radiation therapy (MRgRT) Linac

PURPOSE

With the increasing use of MR-guided radiation therapy (MRgRT), it becomes important to understand and explore accuracy of medical dosimeters in the presence of magnetic field. The purpose of this work is to characterize metal-oxide-semiconductor field-effect transistors (MOSFETs) in MRgRT systems at 0.345 T magnetic field strength.

METHODS

A MOSFET dosimetry system, developed by Best Medical Canada for in-vivo patient dosimetry, was used to study various commissioning tests performed on a MRgRT system, MRIdian^® Linac. We characterized the MOSFET dosimeter with different cable lengths by determining its calibration factor, monitor unit linearity, angular dependence, field size dependence, percentage depth dose (PDD) variation, output factor change, and intensity modulated radiation therapy quality assurance (IMRT QA) verification for several plans. MOSFET results were analyzed and compared with commissioning data and Monte Carlo calculations.

RESULTS

MOSFET measurements were not found to be affected by the presence of 0.345 T magnetic field. Calibration factors were similar for different cable length dosimeters either placed at the parallel or perpendicular direction to the magnetic field, with variations of less than 2%. The detector showed good linearity (R²  = 0.999) for 100-600 MUs range. Output factor measurements were consistent with ionization chamber data within 2.2%. MOSFET PDD measurements were found to be within 1% for 1-15 cm depth range in comparison to ionization chamber. MOSFET normalized angular response matched thermoluminescent detector (TLD) response within 5.5%. The IMRT QA verification data for the MRgRT linac showed that the percentage difference between ionization chamber and MOSFET was 0.91%, 2.05%, and 2.63%, respectively for liver, spine, and mediastinum.

CONCLUSION

MOSFET dosimeters are not affected by the 0.345 T magnetic field in MRgRT system. They showed physics parameters and performance comparable to TLD and ionization chamber; thus, they constitute an alternative to TLD for real-time in-vivo dosimetry in MRgRT procedures.

Characterization of MOSFET dosimeter angular dependence in three rotational axes measured free-in-air and in soft-tissue equivalent material

When performing dose measurements on an X-ray device with multiple angles of irradiation, it is necessary to take the angular dependence of metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters into account. The objective of this study was to investigate the angular sensitivity dependence of MOSFET dosimeters in three rotational axes measured free-in-air and in soft-tissue equivalent material using dental photon energy. Free-in-air dose measurements were performed with three MOSFET dosimeters attached to a carbon fibre holder. Soft tissue measurements were performed with three MOSFET dosimeters placed in a polymethylmethacrylate (PMMA) phantom. All measurements were made in the isocenter of a dental cone-beam computed tomography (CBCT) scanner using 5º angular increments in the three rotational axes: axial, normal-to-axial and tangent-to-axial. The measurements were referenced to a RADCAL 1015 dosimeter. The angular sensitivity free-in-air (1 SD) was 3.7 ± 0.5 mV/mGy for axial, 3.8 ± 0.6 mV/mGy for normal-to-axial and 3.6 ± 0.6 mV/mGy for tangent-to-axial rotation. The angular sensitivity in the PMMA phantom was 3.1 ± 0.1 mV/mGy for axial, 3.3 ± 0.2 mV/mGy for normal-to-axial and 3.4 ± 0.2 mV/mGy for tangent-to-axial rotation. The angular sensitivity variations are considerably smaller in PMMA due to the smoothing effect of the scattered radiation. The largest decreases from the isotropic response were observed free-in-air at 90° (distal tip) and 270° (wire base) in the normal-to-axial and tangent-to-axial rotations, respectively. MOSFET dosimeters provide us with a versatile dosimetric method for dental radiology. However, due to the observed variation in angular sensitivity, MOSFET dosimeters should always be calibrated in the actual clinical settings for the beam geometry and angular range of the CBCT exposure.

Small field electron beam dosimetry using MOSFET detector

The dosimetry of very small electron fields can be challenging due to relative shifts in percent depth‐dose curves, including the location of dmax, and lack of lateral electronic equilibrium in an ion chamber when placed in the beam. Conventionally a small parallel plate chamber or film is utilized to perform small field electron beam dosimetry. Since modern radiotherapy departments are becoming filmless in favor of electronic imaging, an alternate and readily available clinical dosimeter needs to be explored. We have studied the performance of MOSFET as a relative dosimeter in small field electron beams. The reproducibility, linearity and sensitivity of a high‐sensitivity microMOSFET were investigated for clinical electron beams. In addition, the percent depth doses, output factors and profiles have been measured in a water tank with MOSFET and compared with those measured by an ion chamber for a range of field sizes from 1 cm diameter to 10 cm× 10 cm for 6, 12, 16 and 20 MeV beams. Similar comparative measurements were also performed with MOSFET and films in solid water phantom. The MOSFET sensitivity was found to be practically constant over the range of field sizes investigated. The dose response was found to be linear and reproducible (within ±1% for 100 cGy). An excellent agreement was observed among the central axis depth dose curves measured using MOSFET, film and ion chamber. The output factors measured with MOSFET for small fields agreed to within 3% with those measured by film dosimetry. Overall results indicate that MOSFET can be utilized to perform dosimetry for small field electron beam.

PACS number: 87.55.Qr