1
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He X, Kostin R, Knight E, Han MG, Mun J, Bozovic I, Jing C, Zhu Y. Development of a liquid-helium free cryogenic sample holder with mK temperature control for autonomous electron microscopy. Ultramicroscopy 2024; 267:114037. [PMID: 39378698 DOI: 10.1016/j.ultramic.2024.114037] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/07/2024] [Revised: 08/23/2024] [Accepted: 08/30/2024] [Indexed: 10/10/2024]
Abstract
The automated and autonomous cryogenic transmission electron microscopy (Cryo-EM) demands a sample holder capable of maintaining temperatures below 10 K with precise control, long holding times, and minimal helium use. Rising to this challenge, we initiated an ambitious project to develop a novel closed-cycle cryocooler-based cryogenic sample holder that operates without the use of liquid helium and the consumption of gaseous helium. This article presents the design, construction, and experimental testing of the initial prototype, which achieves an ultimate temperature of 5.6 K with exceptional stability close to 1mK, while providing a wide temperature control range from 295 K to 5.6 K, marking a clear advancement in cryo-EM holder development. While the prototype was not designed for atomic resolution imaging and thus lacks a sturdy support system to mitigate mechanical vibrations from the cryocooler's pulsed tube, this innovative approach successfully demonstrates proof of concept. It offers unprecedented capabilities for state-of-the-art cryogenic microscopy and microanalysis in materials and biological sciences.
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Affiliation(s)
- X He
- Condensed Matter Physics and Material Science Department, Brookhaven National Laboratory, Upton, NY 11973, USA
| | - R Kostin
- Euclid Techlabs LLC, 365 Remington Blvd., Bolingbrook, IL 60440, USA
| | - E Knight
- Euclid Techlabs LLC, 365 Remington Blvd., Bolingbrook, IL 60440, USA
| | - M G Han
- Condensed Matter Physics and Material Science Department, Brookhaven National Laboratory, Upton, NY 11973, USA
| | - J Mun
- Condensed Matter Physics and Material Science Department, Brookhaven National Laboratory, Upton, NY 11973, USA
| | - I Bozovic
- Condensed Matter Physics and Material Science Department, Brookhaven National Laboratory, Upton, NY 11973, USA
| | - C Jing
- Euclid Techlabs LLC, 365 Remington Blvd., Bolingbrook, IL 60440, USA
| | - Y Zhu
- Condensed Matter Physics and Material Science Department, Brookhaven National Laboratory, Upton, NY 11973, USA.
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2
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Mun J, Potemkin D, Jang H, Park S, Mick S, Petrovic C, Cheong SW, Han MG, Zhu Y. Atomic resolution scanning transmission electron microscopy at liquid helium temperatures for quantum materials. Ultramicroscopy 2024; 267:114039. [PMID: 39276763 DOI: 10.1016/j.ultramic.2024.114039] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/15/2024] [Revised: 08/30/2024] [Accepted: 09/02/2024] [Indexed: 09/17/2024]
Abstract
Fundamental quantum phenomena in condensed matter, ranging from correlated electron systems to quantum information processors, manifest their emergent characteristics and behaviors predominantly at low temperatures. This necessitates the use of liquid helium (LHe) cooling for experimental observation. Atomic resolution scanning transmission electron microscopy combined with LHe cooling (cryo-STEM) provides a powerful characterization technique to probe local atomic structural modulations and their coupling with charge, spin and orbital degrees-of-freedom in quantum materials. However, achieving atomic resolution in cryo-STEM is exceptionally challenging, primarily due to sample drifts arising from temperature changes and noises associated with LHe bubbling, turbulent gas flow, etc. In this work, we demonstrate atomic resolution cryo-STEM imaging at LHe temperatures using a commercial side-entry LHe cooling holder. Firstly, we examine STEM imaging performance as a function of He gas flow rate, identifying two primary noise sources: He-gas pulsing and He-gas bubbling. Secondly, we propose two strategies to achieve low noise conditions for atomic resolution STEM imaging: either by temporarily suppressing He gas flow rate using the needle valve or by acquiring images during the natural warming process. Lastly, we show the applications of image acquisition methods and image processing techniques in investigating structural phase transitions in Cr2Ge2Te6, CuIr2S4, and CrCl3. Our findings represent an advance in the field of atomic resolution electron microscopy imaging for quantum materials and devices at LHe temperatures, which can be applied to other commercial side-entry LHe cooling TEM holders.
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Affiliation(s)
- Junsik Mun
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, USA
| | - Daniel Potemkin
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, USA; Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY 11794, USA
| | - Houk Jang
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, USA
| | - Suji Park
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, USA
| | | | - Cedomir Petrovic
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, USA
| | - Sang-Wook Cheong
- Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA
| | - Myung-Geun Han
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, USA.
| | - Yimei Zhu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, USA
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3
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Yang H, Zhou Y, Miao G, Rusz J, Yan X, Guzman F, Xu X, Xu X, Aoki T, Zeiger P, Zhu X, Wang W, Guo J, Wu R, Pan X. Phonon modes and electron-phonon coupling at the FeSe/SrTiO 3 interface. Nature 2024; 635:332-336. [PMID: 39478222 DOI: 10.1038/s41586-024-08118-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/18/2024] [Accepted: 09/25/2024] [Indexed: 11/15/2024]
Abstract
The remarkable increase in superconducting transition temperature (Tc) observed at the interface of one-unit-cell FeSe films on SrTiO3 substrates (1 uc FeSe/STO)1 has attracted considerable research into the interface effects2-6. Although this high Tc is thought to be associated with electron-phonon coupling (EPC)2, the microscopic coupling mechanism and its role in the superconductivity remain elusive. Here we use momentum-selective high-resolution electron energy loss spectroscopy to atomically resolve the phonons at the FeSe/STO interface. We uncover new optical phonon modes, coupling strongly with electrons, in the energy range of 75-99 meV. These modes are characterized by out-of-plane vibrations of oxygen atoms in the interfacial double-TiOx layer and the apical oxygens in STO. Our results also demonstrate that the EPC strength and superconducting gap of 1 uc FeSe/STO are closely related to the interlayer spacing between FeSe and the TiOx terminated STO. These findings shed light on the microscopic origin of the interfacial EPC and provide insights into achieving large and consistent Tc enhancement in FeSe/STO and potentially other superconducting systems.
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Affiliation(s)
- Hongbin Yang
- Department of Materials Science and Engineering, University of California, Irvine, CA, USA
| | - Yinong Zhou
- Department of Physics and Astronomy, University of California, Irvine, CA, USA
| | - Guangyao Miao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Ján Rusz
- Department of Physics and Astronomy, Uppsala University, Uppsala, Sweden
| | - Xingxu Yan
- Department of Materials Science and Engineering, University of California, Irvine, CA, USA
| | - Francisco Guzman
- Department of Materials Science and Engineering, University of California, Irvine, CA, USA
| | - Xiaofeng Xu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Xianghan Xu
- Department of Chemistry, Princeton University, Princeton, NJ, USA
| | - Toshihiro Aoki
- Irvine Materials Research Institute (IMRI), University of California, Irvine, CA, USA
| | - Paul Zeiger
- Department of Physics and Astronomy, Uppsala University, Uppsala, Sweden
| | - Xuetao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Weihua Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Jiandong Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Ruqian Wu
- Department of Physics and Astronomy, University of California, Irvine, CA, USA
| | - Xiaoqing Pan
- Department of Materials Science and Engineering, University of California, Irvine, CA, USA.
- Irvine Materials Research Institute (IMRI), University of California, Irvine, CA, USA.
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4
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Liu Y, Meng Q, Mahmoudi P, Wang Z, Zhang J, Yang J, Li W, Wang D, Li Z, Sorrell CC, Li S. Advancing Superconductivity with Interface Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2405009. [PMID: 39104281 DOI: 10.1002/adma.202405009] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Revised: 07/01/2024] [Indexed: 08/07/2024]
Abstract
The development of superconducting materials has attracted significant attention not only for their improved performance, such as high transition temperature (TC), but also for the exploration of their underlying physical mechanisms. Recently, considerable efforts have been focused on interfaces of materials, a distinct category capable of inducing superconductivity at non-superconducting material interfaces or augmenting the TC at the interface between a superconducting material and a non-superconducting material. Here, two distinct types of interfaces along with their unique characteristics are reviewed: interfacial superconductivity and interface-enhanced superconductivity, with a focus on the crucial factors and potential mechanisms responsible for enhancing superconducting performance. A series of materials systems is discussed, encompassing both historical developments and recent progress from the perspectives of technical innovations and the exploration of new material classes. The overarching goal is to illuminate pathways toward achieving high TC, expanding the potential of superconducting parameters across interfaces, and propelling superconductivity research toward practical, high-temperature applications.
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Affiliation(s)
- Yichen Liu
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Qingxiao Meng
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Pezhman Mahmoudi
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Ziyi Wang
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Ji Zhang
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Jack Yang
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Wenxian Li
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Danyang Wang
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Zhi Li
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Charles C Sorrell
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Sean Li
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
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5
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Guo N, Chen X, Yu T, Fan Y, Zhang Q, Lei M, Xu X, Zhu X, Guo J, Gu L, Xu H, Peng R, Feng D. Inferior Interfacial Superconductivity in 1 UC FeSe/SrVO 3/SrTiO 3 with Screened Interfacial Electron-Phonon Coupling. NANO LETTERS 2024; 24:8587-8594. [PMID: 38967395 DOI: 10.1021/acs.nanolett.4c01612] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/06/2024]
Abstract
Single-unit cell (1 UC) FeSe interfaced with TiOx or FeOx exhibits significantly enhanced superconductivity compared to that of bulk FeSe, with interfacial electron-phonon coupling (EPC) playing a crucial role. However, the reduced dimensionality in 1 UC FeSe, which may drive superconducting fluctuations, complicates our understanding of the enhancement mechanisms. We construct a new superconducting interface, 1 UC FeSe/SrVO3/SrTiO3. Here, the itinerant electrons of highly metallic SrVO3 films can screen all high-energy Fuchs-Kliewer phonons, including those of SrTiO3, making it the first FeSe/oxide system with screened interfacial EPC while maintaining the 1 UC FeSe thickness. Despite comparable doping levels, the heavily electron-doped 1 UC FeSe/SrVO3 exhibits a pairing temperature (Tg ∼ 48 K) lower than those of FeSe/SrTiO3 and FeSe/LaFeO3. Our findings disentangle the contributions of interfacial EPC from dimensionality in terms of enhancing Tg in FeSe/oxide interfaces, underscoring the critical importance of interfacial EPC. This FeSe/VOx interface also provides a platform for studying interfacial superconductivity.
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Affiliation(s)
- Nan Guo
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, China
| | - Xiaoyang Chen
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, China
| | - Tianlun Yu
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yu Fan
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Minyinan Lei
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, China
| | - Xiaofeng Xu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xuetao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jiandong Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Haichao Xu
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
| | - Rui Peng
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
| | - Donglai Feng
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, China
- National Synchrotron Radiation Laboratory and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei 230026, China
- New Cornerstone Science Laboratory, University of Science and Technology of China, Hefei 230026, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
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6
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Shi R, Li Q, Xu X, Han B, Zhu R, Liu F, Qi R, Zhang X, Du J, Chen J, Yu D, Zhu X, Guo J, Gao P. Atomic-scale observation of localized phonons at FeSe/SrTiO 3 interface. Nat Commun 2024; 15:3418. [PMID: 38653990 DOI: 10.1038/s41467-024-47688-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/11/2023] [Accepted: 04/03/2024] [Indexed: 04/25/2024] Open
Abstract
In single unit-cell FeSe grown on SrTiO3, the superconductivity transition temperature features a significant enhancement. Local phonon modes at the interface associated with electron-phonon coupling may play an important role in the interface-induced enhancement. However, such phonon modes have eluded direct experimental observations. The complicated atomic structure of the interface brings challenges to obtain the accurate structure-phonon relation knowledge. Here, we achieve direct characterizations of atomic structure and phonon modes at the FeSe/SrTiO3 interface with atomically resolved imaging and electron energy loss spectroscopy in an electron microscope. We find several phonon modes highly localized (~1.3 nm) at the unique double layer Ti-O terminated interface, one of which (~ 83 meV) engages in strong interactions with the electrons in FeSe based on ab initio calculations. This finding of the localized interfacial phonon associated with strong electron-phonon coupling provides new insights into understanding the origin of superconductivity enhancement at the FeSe/SrTiO3 interface.
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Affiliation(s)
- Ruochen Shi
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China
| | - Qize Li
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China
- Department of Physics, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Xiaofeng Xu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Bo Han
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China
| | - Ruixue Zhu
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China
| | - Fachen Liu
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Ruishi Qi
- Department of Physics, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Xiaowen Zhang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China
| | - Jinlong Du
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China
| | - Ji Chen
- Institute of Condensed Matter and Material Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, 100871, China
| | - Dapeng Yu
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology, Shenzhen, 518055, China
- Hefei National Laboratory, 230088, Hefei, China
| | - Xuetao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
| | - Jiandong Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
| | - Peng Gao
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China.
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China.
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, 100871, China.
- Hefei National Laboratory, 230088, Hefei, China.
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7
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Jiao X, Dong W, Shi M, Wang H, Ding C, Wei Z, Gong G, Li Y, Li Y, Zuo B, Wang J, Zhang D, Pan M, Wang L, Xue QK. Significantly enhanced superconductivity in monolayer FeSe films on SrTiO 3(001) via metallic δ-doping. Natl Sci Rev 2024; 11:nwad213. [PMID: 38312379 PMCID: PMC10833465 DOI: 10.1093/nsr/nwad213] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Revised: 07/19/2023] [Accepted: 07/25/2023] [Indexed: 02/06/2024] Open
Abstract
Superconductivity transition temperature (Tc) marks the inception of a macroscopic quantum phase-coherent paired state in fermionic systems. For 2D superconductivity, the paired electrons condense into a coherent superfluid state at Tc, which is usually lower than the pairing temperature, between which intrinsic physics including Berezinskii-Kosterlitz-Thouless transition and pseudogap state are hotly debated. In the case of monolayer FeSe superconducting films on SrTiO3(001), although the pairing temperature (Tp) is revealed to be 65-83 K by using spectroscopy characterization, the measured zero-resistance temperature ([Formula: see text]) is limited to 20 K. Here, we report significantly enhanced superconductivity in monolayer FeSe films by δ-doping of Eu or Al on SrTiO3(001) surface, in which [Formula: see text] is enhanced by 12 K with a narrowed transition width ΔTc ∼ 8 K, compared with non-doped samples. Using scanning tunneling microscopy/spectroscopy measurements, we demonstrate lowered work function of the δ-doped SrTiO3(001) surface and enlarged superconducting gaps in the monolayer FeSe with improved morphology/electronic homogeneity. Our work provides a practical route to enhance 2D superconductivity by using interface engineering.
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Affiliation(s)
- Xiaotong Jiao
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- School of Physics & Information Technology, Shaanxi Normal University, Xi'an 710119, China
| | - Wenfeng Dong
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Mingxia Shi
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Heng Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Cui Ding
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Zhongxu Wei
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Guanming Gong
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yanan Li
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
| | - Yuanzhao Li
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Binjie Zuo
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Jian Wang
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Hefei National Laboratory, Hefei 230088, China
| | - Ding Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Minghu Pan
- School of Physics & Information Technology, Shaanxi Normal University, Xi'an 710119, China
| | - Lili Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Qi-Kun Xue
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
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8
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Xue CL, Dou LG, Xu YJ, Yuan QQ, Li QY, Jia ZY, Li Z, Liu R, Li SC. Iron Vacancy Tunable Superconductor-Insulator Transition in FeSe/SrTiO_{3} Monolayer. PHYSICAL REVIEW LETTERS 2023; 131:256002. [PMID: 38181352 DOI: 10.1103/physrevlett.131.256002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2023] [Revised: 11/15/2023] [Accepted: 11/21/2023] [Indexed: 01/07/2024]
Abstract
The Fe_{4}Se_{5} with a sqrt[5]×sqrt[5] Fe vacancy order is suggested to be a Mott insulator and the parent state of bulk FeSe superconductor. The iron vacancy ordered state has been considered as a Mott insulator and the parent compound of bulk FeSe-based superconductors. However, for the superconducting FeSe/SrTiO_{3} monolayer (FeSe/STO) with an interface-enhanced high transition temperature (T_{c}), the electronic evolution from its Fe vacancy ordered parent phase to the superconducting state, has not been explored due to the challenge to realize an Fe vacancy order in the FeSe/STO monolayer, even though important to the understanding of superconductivity mechanism. In this study, we developed a new method to generate Fe vacancies within the FeSe/STO monolayer in a tunable fashion, with the assistance of atomic hydrogen. As a consequence, an insulating sqrt[5]×sqrt[5] Fe vacancy ordered monolayer is realized as the parent state. By using scanning tunneling microscopy and scanning tunneling spectroscopy, the spectral evolution from superconductivity to insulator is fully characterized. Surprisingly, a prominent spectral weight transfer occurs, thus implying a strong electron correlation effect. Moreover, the Fe vacancy induced insulating gap exhibits no Mott gap-like features. This work provides new insights in understanding the high-T_{c} superconductivity in FeSe/STO monolayer.
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Affiliation(s)
- Cheng-Long Xue
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Li-Guo Dou
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Yong-Jie Xu
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Qian-Qian Yuan
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Qi-Yuan Li
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Zhen-Yu Jia
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Zishuang Li
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Ronghua Liu
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing 210093, China
| | - Shao-Chun Li
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing 210093, China
- Hefei National Laboratory, Hefei 230088, China
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9
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Giri A, Walton SG, Tomko J, Bhatt N, Johnson MJ, Boris DR, Lu G, Caldwell JD, Prezhdo OV, Hopkins PE. Ultrafast and Nanoscale Energy Transduction Mechanisms and Coupled Thermal Transport across Interfaces. ACS NANO 2023; 17:14253-14282. [PMID: 37459320 PMCID: PMC10416573 DOI: 10.1021/acsnano.3c02417] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Accepted: 06/06/2023] [Indexed: 08/09/2023]
Abstract
The coupled interactions among the fundamental carriers of charge, heat, and electromagnetic fields at interfaces and boundaries give rise to energetic processes that enable a wide array of technologies. The energy transduction among these coupled carriers results in thermal dissipation at these surfaces, often quantified by the thermal boundary resistance, thus driving the functionalities of the modern nanotechnologies that are continuing to provide transformational benefits in computing, communication, health care, clean energy, power recycling, sensing, and manufacturing, to name a few. It is the purpose of this Review to summarize recent works that have been reported on ultrafast and nanoscale energy transduction and heat transfer mechanisms across interfaces when different thermal carriers couple near or across interfaces. We review coupled heat transfer mechanisms at interfaces of solids, liquids, gasses, and plasmas that drive the resulting interfacial heat transfer and temperature gradients due to energy and momentum coupling among various combinations of electrons, vibrons, photons, polaritons (plasmon polaritons and phonon polaritons), and molecules. These interfacial thermal transport processes with coupled energy carriers involve relatively recent research, and thus, several opportunities exist to further develop these nascent fields, which we comment on throughout the course of this Review.
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Affiliation(s)
- Ashutosh Giri
- Department
of Mechanical, Industrial and Systems Engineering, University of Rhode Island, Kingston, Rhode Island 02881, United States
| | - Scott G. Walton
- Plasma
Physics Division, Naval Research Laboratory, Washington, DC 22032, United States
| | - John Tomko
- Department
of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Niraj Bhatt
- Department
of Mechanical, Industrial and Systems Engineering, University of Rhode Island, Kingston, Rhode Island 02881, United States
| | - Michael J. Johnson
- Plasma
Physics Division, Naval Research Laboratory, Washington, DC 22032, United States
| | - David R. Boris
- Plasma
Physics Division, Naval Research Laboratory, Washington, DC 22032, United States
| | - Guanyu Lu
- Department
of Mechanical Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Joshua D. Caldwell
- Department
of Mechanical Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States
- Interdisciplinary
Materials Science, Vanderbilt University, Nashville, Tennessee 37235, United States
- Vanderbilt
Institute of Nanoscale Science and Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Oleg V. Prezhdo
- Department
of Chemistry, University of Southern California, Los Angeles, California 90089, United States
- Department
of Physics and Astronomy, University of
Southern California, Los Angeles, California 90089, United States
| | - Patrick E. Hopkins
- Department
of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
- Department
of Materials Science and Engineering, University
of Virginia, Charlottesville, Virginia 22904, United States
- Department
of Physics, University of Virginia, Charlottesville, Virginia 22904, United States
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10
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Kobayashi T, Nakagawa H, Ogawa H, Nabeshima F, Maeda A. Anisotropy of upper critical fields and interface superconductivity in FeSe/SrTiO 3grown by PLD. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:41LT01. [PMID: 37402379 DOI: 10.1088/1361-648x/ace410] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2023] [Accepted: 07/04/2023] [Indexed: 07/06/2023]
Abstract
In this study, we grow FeSe/SrTiO3with thicknesses of 4-19 nm using pulsed laser deposition and investigate their magneto-transport properties. The thinnest film (4 nm) exhibit negative Hall effect, indicating electron transfer into FeSe from the SrTiO3substrate. This is in agreement with reports on ultrathin FeSe/SrTiO3grown by molecular beam epitaxy. The upper critical field is found to exhibit large anisotropy (γ>11.9), estimated from the data near the transition temperature (Tc). In particular, the estimated coherence lengths in the perpendicular direction are 0.15-0.27 nm, which are smaller than thec-axis length of FeSe, and are found to be almost independent of the total thicknesses of the films. These results indicate that superconductivity is confined at the interface of FeSe/SrTiO3.
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Affiliation(s)
- Tomoki Kobayashi
- Department of Basic Science, University of Tokyo, Meguro 153-8902, Tokyo, Japan
| | - Hiroki Nakagawa
- Department of Basic Science, University of Tokyo, Meguro 153-8902, Tokyo, Japan
| | - Hiroki Ogawa
- Department of Basic Science, University of Tokyo, Meguro 153-8902, Tokyo, Japan
| | - Fuyuki Nabeshima
- Department of Basic Science, University of Tokyo, Meguro 153-8902, Tokyo, Japan
| | - Atsutaka Maeda
- Department of Basic Science, University of Tokyo, Meguro 153-8902, Tokyo, Japan
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11
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Guo Y, Qiu D, Shao M, Song J, Wang Y, Xu M, Yang C, Li P, Liu H, Xiong J. Modulations in Superconductors: Probes of Underlying Physics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209457. [PMID: 36504310 DOI: 10.1002/adma.202209457] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2022] [Revised: 11/16/2022] [Indexed: 06/02/2023]
Abstract
The importance of modulations is elevated to an unprecedented level, due to the delicate conditions required to bring out exotic phenomena in quantum materials, such as topological materials, magnetic materials, and superconductors. Recently, state-of-the-art modulation techniques in material science, such as electric-double-layer transistor, piezoelectric-based strain apparatus, angle twisting, and nanofabrication, have been utilized in superconductors. They not only efficiently increase the tuning capability to the broader ranges but also extend the tuning dimensionality to unprecedented degrees of freedom, including quantum fluctuations of competing phases, electronic correlation, and phase coherence essential to global superconductivity. Here, for a comprehensive review, these techniques together with the established modulation methods, such as elemental substitution, annealing, and polarization-induced gating, are contextualized. Depending on the mechanism of each method, the modulations are categorized into stoichiometric manipulation, electrostatic gating, mechanical modulation, and geometrical design. Their recent advances are highlighted by applications in newly discovered superconductors, e.g., nickelates, Kagome metals, and magic-angle graphene. Overall, the review is to provide systematic modulations in emergent superconductors and serve as the coordinate for future investigations, which can stimulate researchers in superconductivity and other fields to perform various modulations toward a thorough understanding of quantum materials.
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Affiliation(s)
- Yehao Guo
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Dong Qiu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Mingxin Shao
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jingyan Song
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Minyi Xu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chao Yang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Peng Li
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Haiwen Liu
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
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12
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Zhang ZM, Gong BC, Nie JH, Meng F, Zhang Q, Gu L, Liu K, Lu ZY, Fu YS, Zhang W. Self-Intercalated 1T-FeSe 2 as an Effective Kagome Lattice. NANO LETTERS 2023; 23:954-961. [PMID: 36706049 DOI: 10.1021/acs.nanolett.2c04362] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In kagome lattice, with the emergence of Dirac cones and flat band in electronic structure, it provides a versatile ground for exploring intriguing interplay among frustrated geometry, topology and correlation. However, such engaging interest is strongly limited by available kagome materials in nature. Here we report on a synthetic strategy of constructing kagome systems via self-intercalation of Fe atoms into the van der Waals gap of FeSe2 via molecular beam epitaxy. Using low-temperature scanning tunneling microscopy, we unveil a kagome-like morphology upon intercalating a 2 × 2 ordered Fe atoms, resulting in a stoichiometry of Fe5Se8. Both the bias-dependent STM imaging and theoretical modeling calculations suggest that the kagome pattern mainly originates from slight but important reconstruction of topmost Se atoms, incurred by the nonequivalent subsurface Fe sites due to the intercalation. Our study demonstrates an alternative approach of constructing artificial kagome structures, which envisions to be tuned for exploring correlated quantum states.
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Affiliation(s)
- Zhi-Mo Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan430074, China
| | - Ben-Chao Gong
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing100872, China
| | - Jin-Hua Nie
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan430074, China
| | - Fanqi Meng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, P.R. China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, P.R. China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, P.R. China
| | - Kai Liu
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing100872, China
| | - Zhong-Yi Lu
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing100872, China
| | - Ying-Shuang Fu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan430074, China
| | - Wenhao Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan430074, China
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13
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Stoichiometric Growth of Monolayer FeSe Superconducting Films Using a Selenium Cracking Source. CRYSTALS 2022. [DOI: 10.3390/cryst12060853] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
As a novel interfacial high-temperature superconductor, monolayer FeSe on SrTiO3 has been intensely studied in the past decade. The high selenium flux involved in the traditional growth method complicates the film’s composition and entails more sample processing to realize the superconductivity. Here we use a Se cracking source for the molecular beam epitaxy growth of FeSe films to boost the reactivity of the Se flux. Reflection high-energy electron diffraction shows that the growth rate of FeSe increases with the increasing Se flux when the Fe flux is fixed, indicating that the Se over-flux induces Fe vacancies. Through careful tuning, we find that the proper Se/Fe flux ratio with Se cracked that is required for growing stoichiometric FeSe is close to 1, much lower than that with the uncracked Se flux. Furthermore, the FeSe film produced by the optimized conditions shows high-temperature superconductivity in the transport measurements without any post-growth treatment. Our work reinforces the importance of stoichiometry for superconductivity and establishes a simpler and more efficient approach to fabricating monolayer FeSe superconducting films.
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14
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Cai X, Li ZX, Yao H. Antiferromagnetism Induced by Bond Su-Schrieffer-Heeger Electron-Phonon Coupling: A Quantum Monte Carlo Study. PHYSICAL REVIEW LETTERS 2021; 127:247203. [PMID: 34951814 DOI: 10.1103/physrevlett.127.247203] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2021] [Revised: 05/22/2021] [Accepted: 10/28/2021] [Indexed: 06/14/2023]
Abstract
Antiferromagnetism (AFM) such as Néel ordering is often closely related to Coulomb interactions such as Hubbard repulsion in two-dimensional (2D) systems. Whether Néel AFM ordering in two dimensions can be dominantly induced by electron-phonon couplings (EPC) has not been completely understood. Here, by employing numerically exact sign-problem-free quantum Monte Carlo (QMC) simulations, we show that bond Su-Schrieffer-Heeger (SSH) phonons with frequency ω and EPC constant λ can induce AFM ordering for a wide range of phonon frequency ω>ω_{c}. For ω<ω_{c}, a valence-bond-solid (VBS) order appears and there is a direct quantum phase transition between VBS and AFM phases at ω_{c}. The phonon mechanism of the AFM ordering is related to the fact that SSH phonons directly couple to electron hopping whose second-order process can induce an effective AFM spin exchange. Our results shall shed new light on understanding AFM ordering in correlated quantum materials.
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Affiliation(s)
- Xun Cai
- Institute for Advanced Study, Tsinghua University, Beijing 100084, China
| | - Zi-Xiang Li
- Beijing National Laboratory for Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Hong Yao
- Institute for Advanced Study, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
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15
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Song Y, Chen Z, Zhang Q, Xu H, Lou X, Chen X, Xu X, Zhu X, Tao R, Yu T, Ru H, Wang Y, Zhang T, Guo J, Gu L, Xie Y, Peng R, Feng D. High temperature superconductivity at FeSe/LaFeO 3 interface. Nat Commun 2021; 12:5926. [PMID: 34635672 PMCID: PMC8505662 DOI: 10.1038/s41467-021-26201-2] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/22/2021] [Accepted: 09/15/2021] [Indexed: 11/09/2022] Open
Abstract
Enormous enhancement of superconducting pairing temperature (Tg) to 65 K in FeSe/SrTiO3 has made it a spotlight. Despite the effort of interfacial engineering, FeSe interfaced with TiOx remains the unique case in hosting high Tg, hindering a decisive understanding on the general mechanism and ways to further improving Tg. Here we constructed a new high-Tg interface, single-layer FeSe interfaced with FeOx-terminated LaFeO3. Large superconducting gap and diamagnetic response evidence that the superconducting pairing can emerge near 80 K, highest amongst all-known interfacial superconductors. Combining various techniques, we reveal interfacial charge transfer and strong interfacial electron-phonon coupling (EPC) in FeSe/LaFeO3, showing that the cooperative pairing mechanism works beyond FeSe-TiOx. Intriguingly, the stronger interfacial EPC than that in FeSe/SrTiO3 is likely induced by the stronger interfacial bonding in FeSe/LaFeO3, and can explain the higher Tg according to recent theoretical calculations, pointing out a workable route in designing new interfaces to achieve higher Tg.
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Affiliation(s)
- Yuanhe Song
- Laboratory of Advanced Materials, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, 200438, Shanghai, China
| | - Zheng Chen
- Department of Physics, Zhejiang University, 310027, Hangzhou, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Haichao Xu
- Laboratory of Advanced Materials, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, 200438, Shanghai, China
- Shanghai Research Center for Quantum Sciences, 201315, Shanghai, China
| | - Xia Lou
- Laboratory of Advanced Materials, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, 200438, Shanghai, China
| | - Xiaoyang Chen
- Laboratory of Advanced Materials, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, 200438, Shanghai, China
| | - Xiaofeng Xu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Xuetao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Ran Tao
- Laboratory of Advanced Materials, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, 200438, Shanghai, China
| | - Tianlun Yu
- Laboratory of Advanced Materials, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, 200438, Shanghai, China
| | - Hao Ru
- Laboratory of Advanced Materials, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, 200438, Shanghai, China
| | - Yihua Wang
- Laboratory of Advanced Materials, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, 200438, Shanghai, China
- Shanghai Research Center for Quantum Sciences, 201315, Shanghai, China
| | - Tong Zhang
- Laboratory of Advanced Materials, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, 200438, Shanghai, China
- Shanghai Research Center for Quantum Sciences, 201315, Shanghai, China
| | - Jiandong Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
| | - Yanwu Xie
- Department of Physics, Zhejiang University, 310027, Hangzhou, China.
| | - Rui Peng
- Laboratory of Advanced Materials, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, 200438, Shanghai, China.
- Shanghai Research Center for Quantum Sciences, 201315, Shanghai, China.
| | - Donglai Feng
- Shanghai Research Center for Quantum Sciences, 201315, Shanghai, China.
- Hefei National Laboratory for Physical Science at Microscale and Department of Physics, University of Science and Technology of China, 230026, Hefei, Anhui, China.
- Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China.
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16
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Abstract
ConspectusQuantum materials refers to a class of materials with exotic properties that arise from the quantum mechanical nature of their constituent electrons, exhibiting, for example, high-temperature superconductivity, colossal magnetoresistivity, multiferroicity, and topological behavior. Quantum materials often have incompletely filled d- or f-electron shells with narrow energy bands, and the conduct of their electrons is strongly correlated. One distinct characteristic of the materials is that their electronic states are often spatially inhomogeneous and thus well suited for study using a spatially resolved electron beam with its great scattering power and sensitivity to atomic ionicity. Furthermore, most of these exotic properties only manifest at very low temperatures, posing a challenge to modern electron microscopy. It requires extraordinarily instrument stabilities at cryogenic temperatures with critical spatial, temporal, and energy resolutions in both static and dynamic manner to probe these materials. On the other hand, the ability to directly visualize the atomic, electronic and spin structures and inhomogeneities of quantum materials and correlate them to their functionalities creates enormous opportunities. At the most elementary levels of condensed matter physics, understanding the competing order of electron, spin, orbital, and lattice and their degrees of freedom, the impacts of defects and interfaces, and the site-specific quantum phenomena and phase transitions that give rise to the emergent behaviors allows us to discover and control novel materials for quantum information science and technologies.In this Account, several of our research examples are selected to highlight the use of cryogenic electron microscopy (cryo-EM) to study strongly correlated quantum materials. We focus on the critical roles of heterogeneity, interfaces, defects, and disorder in crystal structure, magnetic structure, and electronic structure to understand the physical properties of the materials that cryo-EM enables. We show how electron crystallography coupled with Bragg diffraction and diffuse scattering analysis empowers us to reveal the nature of structural modulations, lattice distortion, and phonons and how quantitative electron diffraction can be used to map the distributions of the valence electrons that bond atoms together. We exploit transformative advances in imaging capabilities including the use of femtosecond laser and ultrafast electron diffraction to probe electron-lattice interactions and photoinduced transitions beyond equilibrium of matter. We review our Lorentz phase microscopy studies to illustrate the intriguing transformations among various topological chiral spin states under applied magnetic field at various cryogenic temperatures. Finally, we show that atomically resolved imaging and electron energy-loss spectroscopy at 10 K can be used to understand interface-enhanced superconductivity. The wide range of research and progress on quantum materials at low temperature reported here may inspire and attract more researchers in this ever-expanding field of cryo-EM.
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Affiliation(s)
- Yimei Zhu
- Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory Upton, New York 11973, United States
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17
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Bianco E, Kourkoutis LF. Atomic-Resolution Cryogenic Scanning Transmission Electron Microscopy for Quantum Materials. Acc Chem Res 2021; 54:3277-3287. [PMID: 34415721 DOI: 10.1021/acs.accounts.1c00303] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
ConspectusThe rich physics permeating the phase diagrams of quantum materials have commanded the attention of the solid-state chemistry, materials science, and condensed-matter physics communities, sparking immense research into quantum phase transitions including superconducting, ferroic, and charge-order transitions. Many of these transitions occur at low temperatures and involve electronic, magnetic, or lattice order, which emerges on the atomic to mesoscopic scales. The complex interplay of these states and the heterogeneity that arises due to competition and intertwining of phases, however, is not fully understood and requires probes that capture ordering over multiple length scales down to the local atomic symmetries. Advances in scanning transmission electron microscopy (STEM) have enabled atomic-resolution imaging as well as mapping of functional picometer-scale atomic displacements inside materials. In this Account, we discuss our group's work to expand the reach of atomic-resolution STEM to cryogenic temperatures (cryo-STEM) to study quantum materials with focus on charge-ordered systems.Charge-ordered phases, in which electrons as well as the atomic lattice form periodic patterns that lift the translational symmetries of the crystal, are not only intertwined with superconductivity but also underlie other exotic electronic phenomena such as colossal magnetoresistance and metal-insulator transitions. The periodic lattice distortions (PLDs) modulate the positions of the crystal's nuclei, which can be readily probed by electron microscopy. In a set of examples, we demonstrate cryo-STEM as a powerful technique for probing local order, nanometer-scale heterogeneities, and topological defects in charge-ordered manganites and in transition metal dichalcogenide charge density wave (CDW) systems.With the nearly commensurate-to-commensurate CDW transition upon cooling in 1T-TaS2, we show that nanoscale lattice textures in CDW phases can be revealed through direct imaging. These early atomic-resolution results, however, also highlighted the need for improvements in cryo-STEM imaging, which led to a push to advance data collection and analysis for direct spatial mapping and quantification of PLDs. By introducing an image registration algorithm developed specifically to accommodate fast, low signal-to-noise image acquisitions of crystalline lattices, we address previous limitations due to sample drift in cryo-STEM experiments. This has enabled subangstrom cryo-STEM imaging with sufficient signal-to-noise to reveal the low temperature structure of 1T'-TaTe2. Furthermore, it allows mapping and quantification of PLD atomic displacements in the charge-ordered manganites Bi0.35Sr0.18Ca0.47MnO3 and Nd0.5Sr0.5MnO3 with picometer precision at ∼95 K to resolve not only distinct ordered phases (i.e., site- and bond-centered charge order) but also their nanoscale coexistence within the same sample.Atomic-resolution cryo-STEM opens new opportunities for understanding the microscopic underpinnings of quantum phases. In this Account, we focus on spatial mapping of lattice degrees of freedom in phases that are present at temperatures down to liquid nitrogen. Further advances in instrumentation are needed to expand the temperature range and to also enable atomic-resolution measurements that rely on weaker signals such as electron energy loss spectroscopy (EELS) for probing of electronic structure or 4D-STEM approaches to map electric and magnetic fields.
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Affiliation(s)
- Elisabeth Bianco
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853, United States
| | - Lena F. Kourkoutis
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853, United States
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, United States
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18
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Tyukalova E, Vimal Vas J, Ignatans R, Mueller AD, Medwal R, Imamura M, Asada H, Fukuma Y, Rawat RS, Tileli V, Duchamp M. Challenges and Applications to Operando and In Situ TEM Imaging and Spectroscopic Capabilities in a Cryogenic Temperature Range. Acc Chem Res 2021; 54:3125-3135. [PMID: 34339603 DOI: 10.1021/acs.accounts.1c00078] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
ConspectusIn this Account, we describe the challenges and promising applications of transmission electron microscopy (TEM) imaging and spectroscopy at cryogenic temperatures. Our work focuses on two areas of application: the delay of electron-beam-induced degradation and following low-temperature phenomena in a continuous and variable temperature range. For the former, we present a study of LiMn1.5Ni0.5O4 lithium ion battery cathode material that undergoes electron beam-induced degradation when studied at room temperature by TEM. Cryogenic imaging reveals the true structure of LiMn1.5Ni0.5O4 nanoparticles in their discharged state. Improved stability under electron beam irradiation was confirmed by following the evolution of the O K-edge fine structure by electron energy-loss spectroscopy. Our results demonstrate that the effect of radiation damage on discharged LiMn1.5Ni0.5O4 was previously underestimated and that atomic-resolution imaging at cryogenic temperature has a potential to be generalized to most of the Li-based materials and beyond. For the latter, we present two studies in the imaging of low-temperature phenomena on the local scale, namely, the evolution of ferroelectric and ferromagnetic domains walls, in BaTiO3 and Y3Fe5O12 systems, respectively, in a continuous and variable temperature range. Continuous imaging of the phase transition in BaTiO3, a prototypical ferroelectric system, from the low-temperature orthorhombic phase continuously up to the centrosymmetric high-temperature phase is shown to be possible inside a TEM. Similarly, the propagation of domain walls in Y3Fe5O12, a magnetic insulator, is studied from ∼120 to ∼400 K and combined with the application of a magnetic field and electrical current pulses to mimic the operando conditions as in domain wall memory and logic devices for information technology. Such studies are promising for studying the pinning of the ferroelectric and magnetic domains versus temperature, spin-polarized current, and externally applied magnetic field to better manipulate the domain walls. The capability of combining operando TEM stimuli such as current, voltage, and/or magnetic field with in situ TEM imaging in a continuous cryogenic temperature range will allow the uncovering of fundamental phenomena on the nanometer scale. These studies were made possible using a MEMS-based TEM holder that allowed an electron-transparent sample to be transferred and electrically contacted on a MEMS chip. The six-contact double-tilt holder allows the alignment of the specimen into its zone axis while simultaneously using four electrical contacts to regulate the temperature and two contacts to apply the electrical stimuli, i.e., operando TEM imaging. This Account leads to the demonstration of (i) the high-resolution imaging and spectroscopy of nanoparticles oriented in the desired [110] zone-axis direction at cryogenic temperatures to mitigate the electron beam degradation, (ii) imaging of low-temperature transitions with accurate and continuous control of the temperature that allowed single-frame observation of the presence of both the orthorhombic and tetragonal phases in the BaTiO3 system, and (iii) magnetic domain wall propagation as a function of temperature, magnetic field, and current pulses (100 ns with a 100 kHz repetition rate) in the Y3Fe5O12 system.
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Affiliation(s)
| | | | - Reinis Ignatans
- Institute of Materials, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
| | | | | | - Masaaki Imamura
- Department of Electrical Engineering, Fukuoka Institute of Technology, Fukuoka 811-0295, Japan
| | - Hironori Asada
- Graduate School of Sciences and Technology for Innovation, Yamaguchi University, Ube 755-8611, Japan
| | - Yasuhiro Fukuma
- Department of Physics and Information Technology, Kyushu Institute of Technology, Iizuka 820-8502, Japan
- Research Center for Neuromorphic AI Hardwares, Kyushu Institute of Technology, Kitakyushu 808-0196, Japan
| | | | - Vasiliki Tileli
- Institute of Materials, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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19
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Hart JL, Cha JJ. Seeing Quantum Materials with Cryogenic Transmission Electron Microscopy. NANO LETTERS 2021; 21:5449-5452. [PMID: 34159783 DOI: 10.1021/acs.nanolett.1c02146] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Affiliation(s)
- James L Hart
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
- Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, United States
| | - Judy J Cha
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
- Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, United States
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20
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Jia T, Chen Z, Rebec SN, Hashimoto M, Lu D, Devereaux TP, Lee D, Moore RG, Shen Z. Magic Doping and Robust Superconductivity in Monolayer FeSe on Titanates. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2003454. [PMID: 33977049 PMCID: PMC8097367 DOI: 10.1002/advs.202003454] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/10/2020] [Revised: 01/11/2021] [Indexed: 06/12/2023]
Abstract
The enhanced superconductivity in monolayer FeSe on titanates opens a fascinating pathway toward the rational design of high-temperature superconductors. Utilizing the state-of-the-art oxide plus chalcogenide molecular beam epitaxy systems in situ connected to a synchrotron angle-resolved photoemission spectroscope, epitaxial LaTiO3 layers with varied atomic thicknesses are inserted between monolayer FeSe and SrTiO3, for systematic modulation of interfacial chemical potential. With the dramatic increase of electron accumulation at the LaTiO3/SrTiO3 surface, providing a substantial surge of work function mismatch across the FeSe/oxide interface, the charge transfer and the superconducting gap in the monolayer FeSe are found to remain markedly robust. This unexpected finding indicate the existence of an intrinsically anchored "magic" doping within the monolayer FeSe systems.
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Affiliation(s)
- Tao Jia
- Stanford Institute for Materials and Energy SciencesSLAC National Accelerator LaboratoryMenlo ParkCA94025USA
- Departments of Physics, Applied Physics, and Materials Science and EngineeringGeballe Laboratory for Advanced MaterialsStanford UniversityStanfordCA94305USA
| | - Zhuoyu Chen
- Stanford Institute for Materials and Energy SciencesSLAC National Accelerator LaboratoryMenlo ParkCA94025USA
- Departments of Physics, Applied Physics, and Materials Science and EngineeringGeballe Laboratory for Advanced MaterialsStanford UniversityStanfordCA94305USA
| | - Slavko N. Rebec
- Stanford Institute for Materials and Energy SciencesSLAC National Accelerator LaboratoryMenlo ParkCA94025USA
- Departments of Physics, Applied Physics, and Materials Science and EngineeringGeballe Laboratory for Advanced MaterialsStanford UniversityStanfordCA94305USA
| | - Makoto Hashimoto
- Stanford Synchrotron Radiation LightsourceSLAC National Accelerator LaboratoryMenlo ParkCA94025USA
| | - Donghui Lu
- Stanford Synchrotron Radiation LightsourceSLAC National Accelerator LaboratoryMenlo ParkCA94025USA
| | - Thomas P. Devereaux
- Stanford Institute for Materials and Energy SciencesSLAC National Accelerator LaboratoryMenlo ParkCA94025USA
- Departments of Physics, Applied Physics, and Materials Science and EngineeringGeballe Laboratory for Advanced MaterialsStanford UniversityStanfordCA94305USA
| | - Dung‐Hai Lee
- Department of PhysicsUniversity of California at BerkeleyBerkeleyCA94720USA
- Materials Sciences DivisionLawrence Berkeley National LaboratoryBerkeleyCA94720USA
| | - Robert G. Moore
- Materials Science and Technology DivisionOak Ridge National LaboratoryOak RidgeTN37831USA
| | - Zhi‐Xun Shen
- Stanford Institute for Materials and Energy SciencesSLAC National Accelerator LaboratoryMenlo ParkCA94025USA
- Departments of Physics, Applied Physics, and Materials Science and EngineeringGeballe Laboratory for Advanced MaterialsStanford UniversityStanfordCA94305USA
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21
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Shi ZQ, Li H, Xue CL, Yuan QQ, Lv YY, Xu YJ, Jia ZY, Gao L, Chen Y, Zhu W, Li SC. Tuning the Electronic Structure of an α-Antimonene Monolayer through Interface Engineering. NANO LETTERS 2020; 20:8408-8414. [PMID: 33064495 DOI: 10.1021/acs.nanolett.0c03704] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The interfacial charge transfer from the substrate may influence the electronic structure of the epitaxial van der Waals (vdW) monolayers and, thus, their further technological applications. For instance, the freestanding Sb monolayer in the puckered honeycomb phase (α-antimonene), the structural analogue of black phosphorene, was predicted to be a semiconductor, but the epitaxial one behaves as a gapless semimetal when grown on the Td-WTe2 substrate. Here, we demonstrate that interface engineering can be applied to tune the interfacial charge transfer and, thus, the electron band of the epitaxial monolayer. As a result, the nearly freestanding (semiconducting) α-antimonene monolayer with a band gap of ∼170 meV was successfully obtained on the SnSe substrate. Furthermore, a semiconductor-semimetal crossover is observed in the bilayer α-antimonene. This study paves the way toward modifying the electron structure in two-dimensional vdW materials through interface engineering.
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Affiliation(s)
- Zhi-Qiang Shi
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Huiping Li
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics Chinese Academy of Sciences, School of Physical Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Cheng-Long Xue
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Qian-Qian Yuan
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Yang-Yang Lv
- National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Yong-Jie Xu
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Zhen-Yu Jia
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Libo Gao
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yanbin Chen
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Wenguang Zhu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics Chinese Academy of Sciences, School of Physical Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Shao-Chun Li
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing 210093, China
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22
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Huang Y, Wolowiec C, Zhu T, Hu Y, An L, Li Z, Grossman JC, Schuller IK, Ren S. Emerging Magnetic Interactions in van der Waals Heterostructures. NANO LETTERS 2020; 20:7852-7859. [PMID: 33054240 DOI: 10.1021/acs.nanolett.0c02175] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Vertical van der Waals (vdWs) heterostructures based on layered materials are attracting interest as a new class of quantum materials, where interfacial charge-transfer coupling can give rise to fascinating strongly correlated phenomena. Transition metal chalcogenides are a particularly exciting material family, including ferromagnetic semiconductors, multiferroics, and superconductors. Here, we report the growth of an organic-inorganic heterostructure by intercalating molecular electron donating bis(ethylenedithio)tetrathiafulvalene into (Li,Fe)OHFeSe, a layered material in which the superconducting ground state results from the intercalation of hydroxide layer. Molecular intercalation in this heterostructure induces a transformation from a paramagnetic to spin-glass-like state that is sensitive to the stoichiometry of molecular donor and an applied magnetic field. Besides, electron-donating molecules reduce the electrical resistivity in the heterostructure and modify its response to laser illumination. This hybrid heterostructure provides a promising platform to study emerging magnetic and electronic behaviors in strongly correlated layered materials.
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Affiliation(s)
- Yulong Huang
- Department of Mechanical and Aerospace Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
| | - Christian Wolowiec
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, California 92093, United States
| | - Taishan Zhu
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Yong Hu
- Department of Mechanical and Aerospace Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
| | - Lu An
- Department of Mechanical and Aerospace Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
| | - Zheng Li
- Department of Mechanical and Aerospace Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
| | - Jeffrey C Grossman
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Ivan K Schuller
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, California 92093, United States
| | - Shenqiang Ren
- Department of Mechanical and Aerospace Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
- Department of Chemistry, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
- Research and Education in Energy, Environment, and Water (RENEW) Institute, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
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23
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Li Y, Huang W, Li Y, Chiu W, Cui Y. Opportunities for Cryogenic Electron Microscopy in Materials Science and Nanoscience. ACS NANO 2020; 14:9263-9276. [PMID: 32806083 DOI: 10.1021/acsnano.0c05020] [Citation(s) in RCA: 37] [Impact Index Per Article: 7.4] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Cryogenic electron microscopy (cryo-EM) was the basis for the 2017 Nobel Prize in Chemistry for its profound impact on the field of structural biology by freezing and stabilizing fragile biomolecules for near atomic-resolution imaging in their native states. Beyond life science, the development of cryo-EM for the physical sciences may offer access to previously inaccessible length scales for materials characterization in systems that would otherwise be too sensitive for high-resolution electron microscopy and spectroscopy. Weakly bonded and reactive materials that typically degrade under electron irradiation and environmental exposure can potentially be stabilized by cryo-EM, opening up exciting opportunities to address many central questions in materials science. New discoveries and fundamental breakthroughs in understanding are likely to follow. In this Perspective, we identify six major areas in materials science that may benefit from the interdisciplinary application of cryo-EM: (1) batteries, (2) soft polymers, (3) metal-organic frameworks, (4) perovskite solar cells, (5) electrocatalysts, and (6) quantum materials. We highlight long-standing questions in each of these areas that cryo-EM can potentially address, which would firmly establish the powerful tool's broad scope and utility beyond biology.
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Affiliation(s)
- Yanbin Li
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | - William Huang
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | - Yuzhang Li
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Wah Chiu
- Department of Bioengineering, Stanford University, Stanford, California 94305, United States
- Department of Microbiology and Immunology, Stanford University School of Medicine, Stanford, California 94305, United States
- Photon Science, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, United States
| | - Yi Cui
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, United States
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24
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Abstract
Emergent electronic phenomena in iron-based superconductors have been at the forefront of condensed matter physics for more than a decade. Much has been learned about the origins and intertwined roles of ordered phases, including nematicity, magnetism, and superconductivity, in this fascinating class of materials. In recent years, focus has been centered on the peculiar and highly unusual properties of FeSe and its close cousins. This family of materials has attracted considerable attention due to the discovery of unexpected superconducting gap structures, a wide range of superconducting critical temperatures, and evidence for nontrivial band topology, including associated spin-helical surface states and vortex-induced Majorana bound states. Here, we review superconductivity in iron chalcogenide superconductors, including bulk FeSe, doped bulk FeSe, FeTe1−xSex, intercalated FeSe materials, and monolayer FeSe and FeTe1−xSex on SrTiO3. We focus on the superconducting properties, including a survey of the relevant experimental studies, and a discussion of the different proposed theoretical pairing scenarios. In the last part of the paper, we review the growing recent evidence for nontrivial topological effects in FeSe-related materials, focusing again on interesting implications for superconductivity.
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25
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Goodge BH, Bianco E, Schnitzer N, Zandbergen HW, Kourkoutis LF. Atomic-Resolution Cryo-STEM Across Continuously Variable Temperatures. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2020; 26:439-446. [PMID: 32501193 DOI: 10.1017/s1431927620001427] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Atomic-resolution cryogenic scanning transmission electron microscopy (cryo-STEM) has provided a path to probing the microscopic nature of select low-temperature phases in quantum materials. Expanding cryo-STEM techniques to broadly tunable temperatures will give access to the rich temperature-dependent phase diagrams of these materials. With existing cryo-holders, however, variations in sample temperature significantly disrupt the thermal equilibrium of the system, resulting in large-scale sample drift. The ability to tune the temperature without negative impact on the overall instrument stability is crucial, particularly for high-resolution experiments. Here, we test a new side-entry continuously variable temperature dual-tilt cryo-holder which integrates liquid nitrogen cooling with a 6-pin micro-electromechanical system (MEMS) sample heater to overcome some of these experimental challenges. We measure consistently low drift rates of 0.3-0.4 Å/s and demonstrate atomic-resolution cryo-STEM imaging across a continuously variable temperature range from ~100 K to well above room temperature. We conduct additional drift stability measurements across several commercial sample stages and discuss implications for further developments of ultra-stable, flexible cryo-stages.
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Affiliation(s)
- Berit H Goodge
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY14853, USA
| | - Elisabeth Bianco
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY14853, USA
| | - Noah Schnitzer
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY14853, USA
| | - Henny W Zandbergen
- Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, The Netherlands
- HennyZ, 2223 GL Katwijk, The Netherlands
| | - Lena F Kourkoutis
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY14853, USA
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26
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Xu X, Zhang S, Zhu X, Guo J. Superconductivity enhancement in FeSe/SrTiO 3: a review from the perspective of electron-phonon coupling. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:343003. [PMID: 32241002 DOI: 10.1088/1361-648x/ab85f0] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2019] [Accepted: 04/02/2020] [Indexed: 06/11/2023]
Abstract
Single-layer FeSe films grown on SrTiO3, with the highest superconducting transition temperature (TC) among all the iron-based superconductors, serves as an ideal platform for studying the microscopic mechanisms of high-TCsuperconductivity. The significant role of interfacial coupling has been widely recognized, while the precise nature of theTCenhancement remains open. In this review, we focus on the investigations of the interfacial coupling in FeSe/SrTiO3from the perspective of electron-phonon coupling (EPC). The main content will include an overview of the experimental measurements associated with different theoretical models and arguments about the EPC. Especially, besides the discussions of EPC based on the measurements of electronic states, we will emphasize the analyses based on phonon measurements. A uniform picture about the nature of the EPC and its relation to theTCenhancement in FeSe/SrTiO3has still not achieved, which should be the key for further studies aiming to the in-depth understanding of high-TCsuperconductivity and the discovery of new superconductors with even enhancedTC.
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Affiliation(s)
- Xiaofeng Xu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Shuyuan Zhang
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, United States of America
| | - Xuetao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Jiandong Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
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27
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Peng R, Zou K, Han MG, Albright SD, Hong H, Lau C, Xu HC, Zhu Y, Walker FJ, Ahn CH. Picoscale structural insight into superconductivity of monolayer FeSe/SrTiO 3. SCIENCE ADVANCES 2020; 6:eaay4517. [PMID: 32284994 PMCID: PMC7141823 DOI: 10.1126/sciadv.aay4517] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2019] [Accepted: 01/14/2020] [Indexed: 05/25/2023]
Abstract
Remarkable enhancement of the superconducting transition temperature (T c) has been observed for monolayer (ML) FeSe films grown on SrTiO3 substrates. The atomic-scale structure of the FeSe/SrTiO3 interface is an important determinant of both the magnetic and interfacial electron-phonon interactions and is a key ingredient to understanding its high-T c superconductivity. We resolve the atomic-scale structure of the FeSe/SrTiO3 interface through a complementary analysis of scanning transmission electron microscopy and in situ surface x-ray diffraction. We find that the interface is more strongly bonded for a particular registration, which leads to a coherently strained ML. We also determine structural parameters, such as the distance between ML FeSe and the oxide, Se─Fe─Se bond angles, layer-resolved distances between Fe─Se, and registry of the FeSe lattice relative to the oxide. This picoscale structure determination provides an explicit structural framework and constraint for theoretical approaches addressing the high-T c mechanism in FeSe/SrTiO3.
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Affiliation(s)
- Rui Peng
- Department of Applied Physics, Yale University, New Haven, CT 06520, USA
- Center for Research on Interface Structures and Phenomena, Yale University, New Haven, CT 06520, USA
- Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China
| | - Ke Zou
- Department of Applied Physics, Yale University, New Haven, CT 06520, USA
- Center for Research on Interface Structures and Phenomena, Yale University, New Haven, CT 06520, USA
| | - M. G. Han
- Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY 11973, USA
| | - Stephen D. Albright
- Center for Research on Interface Structures and Phenomena, Yale University, New Haven, CT 06520, USA
- Department of Physics, Yale University, New Haven, CT 06520, USA
| | - Hawoong Hong
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439, USA
| | - Claudia Lau
- Center for Research on Interface Structures and Phenomena, Yale University, New Haven, CT 06520, USA
- Department of Physics, Yale University, New Haven, CT 06520, USA
| | - H. C. Xu
- Department of Applied Physics, Yale University, New Haven, CT 06520, USA
- Center for Research on Interface Structures and Phenomena, Yale University, New Haven, CT 06520, USA
- Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China
| | - Yimei Zhu
- Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY 11973, USA
| | - F. J. Walker
- Department of Applied Physics, Yale University, New Haven, CT 06520, USA
- Center for Research on Interface Structures and Phenomena, Yale University, New Haven, CT 06520, USA
| | - C. H. Ahn
- Department of Applied Physics, Yale University, New Haven, CT 06520, USA
- Center for Research on Interface Structures and Phenomena, Yale University, New Haven, CT 06520, USA
- Department of Physics, Yale University, New Haven, CT 06520, USA
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT 06520, USA
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28
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Wang C, Lian B, Guo X, Mao J, Zhang Z, Zhang D, Gu BL, Xu Y, Duan W. Type-II Ising Superconductivity in Two-Dimensional Materials with Spin-Orbit Coupling. PHYSICAL REVIEW LETTERS 2019; 123:126402. [PMID: 31633945 DOI: 10.1103/physrevlett.123.126402] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2019] [Revised: 07/16/2019] [Indexed: 06/10/2023]
Abstract
Centrosymmetric materials with spin-degenerate bands are generally considered to be trivial for spintronics and related physics. In two-dimensional (2D) materials with multiple degenerate orbitals, we find that the spin-orbit coupling can induce spin-orbital locking, generate out-of-plane Zeeman-like fields displaying opposite signs for opposing orbitals, and create novel electronic states insensitive to the in-plane magnetic field, which thus enables a new type of Ising superconductivity applicable to centrosymmetric materials. Many candidate materials are identified by high-throughput first-principles calculations. Our work enriches the physics and materials of Ising superconductivity, opening new opportunities for future research of 2D materials.
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Affiliation(s)
- Chong Wang
- Institute for Advanced Study, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, China
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
| | - Biao Lian
- Princeton Center for Theoretical Science, Princeton University, Princeton 08544, New Jersey, USA
| | - Xiaomi Guo
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, China
| | - Jiahao Mao
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, China
| | - Zetao Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, China
| | - Ding Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Bing-Lin Gu
- Institute for Advanced Study, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, China
| | - Yong Xu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, China
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
| | - Wenhui Duan
- Institute for Advanced Study, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, China
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29
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The Dresden in-situ (S)TEM special with a continuous-flow liquid-helium cryostat. Ultramicroscopy 2019; 203:12-20. [DOI: 10.1016/j.ultramic.2019.01.005] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/10/2018] [Revised: 12/30/2018] [Accepted: 01/21/2019] [Indexed: 11/18/2022]
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30
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Yang H, Zhou G, Zhu Y, Gong GM, Zhang Q, Liao M, Li Z, Ding C, Meng F, Rafique M, Wang H, Gu L, Zhang D, Wang L, Xue QK. Superconductivity above 28 K in single unit cell FeSe films interfaced with GaO 2-δ layer on NdGaO 3(1 1 0). Sci Bull (Beijing) 2019; 64:490-494. [PMID: 36659735 DOI: 10.1016/j.scib.2019.03.017] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/24/2019] [Revised: 03/12/2019] [Accepted: 03/13/2019] [Indexed: 01/21/2023]
Affiliation(s)
- Haohao Yang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Guanyu Zhou
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yuying Zhu
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Guan-Ming Gong
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Qinghua Zhang
- Laboratory for Advanced Materials & Electron Microscopy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Menghan Liao
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Zheng Li
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Cui Ding
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Fanqi Meng
- Laboratory for Advanced Materials & Electron Microscopy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Mohsin Rafique
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Heng Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Lin Gu
- Laboratory for Advanced Materials & Electron Microscopy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
| | - Ding Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China; Collaborative Innovation Center of Quantum Matter, Beijing 100084, China.
| | - Lili Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China; Collaborative Innovation Center of Quantum Matter, Beijing 100084, China.
| | - Qi-Kun Xue
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China; Collaborative Innovation Center of Quantum Matter, Beijing 100084, China.
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Manso RH, Acharya P, Deng S, Crane CC, Reinhart B, Lee S, Tong X, Nykypanchuk D, Zhu J, Zhu Y, Greenlee LF, Chen J. Controlling the 3-D morphology of Ni-Fe-based nanocatalysts for the oxygen evolution reaction. NANOSCALE 2019; 11:8170-8184. [PMID: 30775739 DOI: 10.1039/c8nr10138h] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Controlling the 3-D morphology of nanocatalysts is one of the underexplored but important approaches for improving the sluggish kinetics of the oxygen evolution reaction (OER) in water electrolysis. This work reports a scalable, oil-based method based on thermal decomposition of organometallic complexes to yield highly uniform Ni-Fe-based nanocatalysts with a well-defined morphology (i.e. Ni-Fe core-shell, Ni/Fe alloy, and Fe-Ni core-shell). Transmission electron microscopy reveals their morphology and composition to be NiOx-FeOx/NiOx core-mixed shell, NiOx/FeOx alloy, and FeOx-NiOx core-shell. X-ray techniques resolve the electronic structures of the bulk and are supported by electron energy loss spectroscopy analysis of individual nanoparticles. These results suggest that the crystal structure of Ni is most likely to contain α-Ni(OH)2 and that the chemical environment of Fe is variable, depending on the morphology of the nanoparticle. The Ni diffusion from the amorphous Ni-based core to the iron oxide shell makes the NiOx-NiOx/FeOx core-mixed shell structure the most active and the most stable nanocatalyst, which outperforms the comparison NiOx/FeOx alloy nanoparticles expected to be active for the OER. This study suggests that the chemical environment of the mixed NiOx/FeOx alloy composition is important to achieve high electrocatalytic activity for the OER and that the 3-D morphology plays a key role in the optimization of the electrocatalytic activity and stability of the nanocatalyst for the OER.
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Affiliation(s)
- Ryan H Manso
- Department of Chemistry and Biochemistry, University of Arkansas, Fayetteville, AR 72701, USA.
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Zhang S, Wei T, Guan J, Zhu Q, Qin W, Wang W, Zhang J, Plummer EW, Zhu X, Zhang Z, Guo J. Enhanced Superconducting State in FeSe/SrTiO_{3} by a Dynamic Interfacial Polaron Mechanism. PHYSICAL REVIEW LETTERS 2019; 122:066802. [PMID: 30822064 DOI: 10.1103/physrevlett.122.066802] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2018] [Indexed: 06/09/2023]
Abstract
The observation of substantially enhanced superconductivity of single-layer FeSe films on SrTiO_{3} has stimulated intensive research interest. At present, conclusive experimental data on the corresponding electron-boson interaction is still missing. Here we use inelastic electron scattering spectroscopy and angle resolved photoemission spectroscopy to show that the electrons in these systems are dressed by the strongly polarized lattice distortions of the SrTiO_{3}, and the indispensable nonadiabatic nature of such a coupling leads to the formation of dynamic interfacial polarons. Furthermore, the collective motion of the polarons results in a polaronic plasmon mode, which is unambiguously correlated with the surface phonons of SrTiO_{3} in the presence of the FeSe films. A microscopic model is developed showing that the interfacial polaron-polaron interaction leads to the superconductivity enhancement.
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Affiliation(s)
- Shuyuan Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tong Wei
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jiaqi Guan
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qing Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wei Qin
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Weihua Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jiandi Zhang
- Department of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana 70808, USA
| | - E W Plummer
- Department of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana 70808, USA
| | - Xuetao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Zhenyu Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jiandong Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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Yang M, Yan C, Ma Y, Li L, Cen C. Light induced non-volatile switching of superconductivity in single layer FeSe on SrTiO 3 substrate. Nat Commun 2019; 10:85. [PMID: 30622274 PMCID: PMC6325130 DOI: 10.1038/s41467-018-08024-w] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/21/2018] [Accepted: 12/10/2018] [Indexed: 11/09/2022] Open
Abstract
The capability of controlling superconductivity by light is highly desirable for active quantum device applications. Since superconductors rarely exhibit strong photoresponses, and optically sensitive materials are often not superconducting, efficient coupling between these two characters can be very challenging in a single material. Here we show that, in FeSe/SrTiO3 heterostructures, the superconducting transition temperature in FeSe monolayer can be effectively raised by the interband photoexcitations in the SrTiO3 substrate. Attributed to a light induced metastable polar distortion uniquely enabled by the FeSe/SrTiO3 interface, this effect only requires a less than 50 µW cm-2 continuous-wave light field. The fast optical generation of superconducting zero resistance state is non-volatile but can be rapidly reversed by applying voltage pulses to the back of SrTiO3 substrate. The capability of switching FeSe repeatedly and reliably between normal and superconducting states demonstrate the great potential of making energy-efficient quantum optoelectronics at designed correlated interfaces.
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Affiliation(s)
- Ming Yang
- Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia, 26506, USA.,National Key Laboratory of Science and Technology on Power Sources, Tianjin Institute of Power Sources, Tianjin, 300384, P. R. China
| | - Chenhui Yan
- Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia, 26506, USA
| | - Yanjun Ma
- Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia, 26506, USA
| | - Lian Li
- Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia, 26506, USA.
| | - Cheng Cen
- Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia, 26506, USA.
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