1
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Zhang J, Shen S, Puggioni D, Wang M, Sha H, Xu X, Lyu Y, Peng H, Xing W, Walters LN, Liu L, Wang Y, Hou D, Xi C, Pi L, Ishizuka H, Kotani Y, Kimata M, Nojiri H, Nakamura T, Liang T, Yi D, Nan T, Zang J, Sheng Z, He Q, Zhou S, Nagaosa N, Nan CW, Tokura Y, Yu R, Rondinelli JM, Yu P. A correlated ferromagnetic polar metal by design. NATURE MATERIALS 2024; 23:912-919. [PMID: 38605196 DOI: 10.1038/s41563-024-01856-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2023] [Accepted: 03/11/2024] [Indexed: 04/13/2024]
Abstract
Polar metals have recently garnered increasing interest because of their promising functionalities. Here we report the experimental realization of an intrinsic coexisting ferromagnetism, polar distortion and metallicity in quasi-two-dimensional Ca3Co3O8. This material crystallizes with alternating stacking of oxygen tetrahedral CoO4 monolayers and octahedral CoO6 bilayers. The ferromagnetic metallic state is confined within the quasi-two-dimensional CoO6 layers, and the broken inversion symmetry arises simultaneously from the Co displacements. The breaking of both spatial-inversion and time-reversal symmetries, along with their strong coupling, gives rise to an intrinsic magnetochiral anisotropy with exotic magnetic field-free non-reciprocal electrical resistivity. An extraordinarily robust topological Hall effect persists over a broad temperature-magnetic field phase space, arising from dipole-induced Rashba spin-orbit coupling. Our work not only provides a rich platform to explore the coupling between polarity and magnetism in a metallic system, with extensive potential applications, but also defines a novel design strategy to access exotic correlated electronic states.
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Affiliation(s)
- Jianbing Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Shengchun Shen
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Danilo Puggioni
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA
| | - Meng Wang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Haozhi Sha
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
- MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing, China
| | - Xueli Xu
- High Magnetic Field Laboratory, HFIPS, Anhui, Chinese Academy of Sciences, Hefei, China
| | - Yingjie Lyu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Huining Peng
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Wandong Xing
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
- MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing, China
| | - Lauren N Walters
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA
| | - Linhan Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
- MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing, China
| | - Yujia Wang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - De Hou
- High Magnetic Field Laboratory, HFIPS, Anhui, Chinese Academy of Sciences, Hefei, China
| | - Chuanying Xi
- High Magnetic Field Laboratory, HFIPS, Anhui, Chinese Academy of Sciences, Hefei, China
| | - Li Pi
- High Magnetic Field Laboratory, HFIPS, Anhui, Chinese Academy of Sciences, Hefei, China
| | - Hiroaki Ishizuka
- Department of Physics, Tokyo Institute of Technology, Tokyo, Japan
| | - Yoshinori Kotani
- Center for Synchrotron Radiation Research, Japan Synchrotron Radiation Research Institute, Hyogo, Japan
| | - Motoi Kimata
- Institute of Materials Research, Tohoku University, Sendai, Japan
| | - Hiroyuki Nojiri
- Institute of Materials Research, Tohoku University, Sendai, Japan
| | - Tetsuya Nakamura
- International Center for Synchrotron Radiation Innovation Smart, Tohoku University, Sendai, Japan
| | - Tian Liang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
- Frontier Science Center for Quantum Information, Beijing, China
| | - Di Yi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Tianxiang Nan
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, China
| | - Jiadong Zang
- Department of Physics and Astronomy, University of New Hampshire, Durham, NH, USA
| | - Zhigao Sheng
- High Magnetic Field Laboratory, HFIPS, Anhui, Chinese Academy of Sciences, Hefei, China
| | - Qing He
- Department of Physics, Durham University, Durham, UK
| | - Shuyun Zhou
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
- Frontier Science Center for Quantum Information, Beijing, China
| | - Naoto Nagaosa
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
- Department of Applied Physics, University of Tokyo, Tokyo, Japan
| | - Ce-Wen Nan
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Yoshinori Tokura
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
- Department of Applied Physics, University of Tokyo, Tokyo, Japan
| | - Rong Yu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China.
- MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing, China.
| | - James M Rondinelli
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA.
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China.
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan.
- Frontier Science Center for Quantum Information, Beijing, China.
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2
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Jo Y, Kim Y, Kim S, Ryoo E, Noh G, Han GJ, Lee JH, Cho WJ, Lee GH, Choi SY, Lee D. Field-Free Spin-Orbit Torque Magnetization Switching in a Single-Phase Ferromagnetic and Spin Hall Oxide. NANO LETTERS 2024; 24:7100-7107. [PMID: 38810235 DOI: 10.1021/acs.nanolett.4c01788] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2024]
Abstract
Current-induced spin-orbit torque (SOT) offers substantial promise for the development of low-power, nonvolatile magnetic memory. Recently, a single-phase material concurrently exhibiting magnetism and the spin Hall effect has emerged as a scientifically and technologically interesting platform for realizing efficient and compact SOT systems. Here, we demonstrate external-magnetic-field-free switching of perpendicular magnetization in a single-phase ferromagnetic and spin Hall oxide SrRuO3. We delicately altered the local lattices of the top and bottom surface layers of SrRuO3, while retaining a quasi-homogeneous, single-crystalline nature of the SrRuO3 bulk. This leads to unbalanced spin Hall effects between the top and bottom layers, enabling net SOT performance within single-layer ferromagnetic SrRuO3. Notably, our SrRuO3 exhibits the highest SOT efficiency and lowest power consumption among all known single-layer systems under field-free conditions. Our method of artificially manipulating the local atomic structures will pave the way for advances in spin-orbitronics and the exploration of new SOT materials.
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Affiliation(s)
- Yongjoo Jo
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| | - Younji Kim
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| | - Sanghyeon Kim
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| | - Eunjo Ryoo
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| | - Gahee Noh
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| | - Gi-Jeong Han
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| | - Ji Hye Lee
- Center for Correlated Electron Systems, Institute of Basic Science, Seoul 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
- Advanced Institute of Convergence Technology, Seoul National University, Suwon 16229, Korea
| | - Won Joon Cho
- Material Research Center, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon 16678, Korea
| | - Gil-Ho Lee
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
- Center for van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang 37673, Korea
- Department of Semiconductor Engineering, Pohang University of Science and Technology, Pohang 37673, Korea
| | - Daesu Lee
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
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3
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Zhang H, Chen X, Wang T, Huang X, Chen X, Shao YT, Meng F, Meisenheimer P, N'Diaye A, Klewe C, Shafer P, Pan H, Jia Y, Crommie MF, Martin LW, Yao J, Qiu Z, Muller DA, Birgeneau RJ, Ramesh R. Room-Temperature, Current-Induced Magnetization Self-Switching in A Van Der Waals Ferromagnet. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308555. [PMID: 38016700 DOI: 10.1002/adma.202308555] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/22/2023] [Revised: 10/30/2023] [Indexed: 11/30/2023]
Abstract
2D layered materials with broken inversion symmetry are being extensively pursued as spin source layers to realize high-efficiency magnetic switching. Such low-symmetry layered systems are, however, scarce. In addition, most layered magnets with perpendicular magnetic anisotropy show a low Curie temperature. Here, the experimental observation of spin-orbit torque magnetization self-switching at room temperature in a layered polar ferromagnetic metal, Fe2.5 Co2.5 GeTe2 is reported. The spin-orbit torque is generated from the broken inversion symmetry along the c-axis of the crystal. These results provide a direct pathway toward applicable 2D spintronic devices.
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Affiliation(s)
- Hongrui Zhang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Xiang Chen
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Tianye Wang
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Xiaoxi Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Xianzhe Chen
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Yu-Tsun Shao
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA
| | - Fanhao Meng
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Peter Meisenheimer
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Alpha N'Diaye
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Christoph Klewe
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Padraic Shafer
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Hao Pan
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Yanli Jia
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Michael F Crommie
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Departments of Materials Science and NanoEngineering, Chemistry, and Physics and Astronomy, Rice University, Houston, TX, 77005, USA
- Rice Advanced Materials Institute, Rice University, Houston, TX, 77005, USA
| | - Jie Yao
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Ziqiang Qiu
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - David A Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, 14853, USA
| | - Robert J Birgeneau
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Physics, University of California, Berkeley, CA, 94720, USA
- Department of Physics and Astronomy, Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
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4
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Huang Q, Liu S, Yang T, Xie R, Cai L, Cao Q, Lü W, Bai L, Tian Y, Yan S. Current-Induced Magnetization Switching in Light-Metal-Oxide/Ferromagnetic-Metal Bilayers via Orbital Rashba Effect. NANO LETTERS 2023. [PMID: 38019659 DOI: 10.1021/acs.nanolett.3c03972] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/01/2023]
Abstract
The orbital angular momentum (OAM) generation as well as its associated orbital torque is currently a matter of great interest in spin-orbitronics and is receiving increasing attention. In particular, recent theoretical work predicts that the oxidized light metal Cu can serve as an efficient OAM generator through its surface orbital Rashba effect. Here, for the first time, the crucial current-induced magnetic-field-free in-plane magnetization reversal is experimentally demonstrated in CoFeB/CuOx bilayers without any heavy elements. We show that the critical current density can be comparable to that of strong spin-orbit coupling systems with heavy metals (Pt and Ta) and that the magnetization reversal mechanism is governed by coherent rotation in the grains through the second-harmonic and magneto-optical Kerr effect measurements. Our results indicate that light metal oxides can play an equally important role as heavy metals in magnetization reversal, broadening the choice of materials for engineering spintronic devices.
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Affiliation(s)
- QiKun Huang
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Senmiao Liu
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Tianxiang Yang
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Ronghuan Xie
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Li Cai
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Qiang Cao
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Weiming Lü
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Lihui Bai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yufeng Tian
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Shishen Yan
- Spintronics Institute, University of Jinan, Jinan 250022, China
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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5
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Krempaský J, Springholz G, D'Souza SW, Caha O, Gmitra M, Ney A, Vaz CAF, Piamonteze C, Fanciulli M, Kriegner D, Krieger JA, Prokscha T, Salman Z, Minár J, Dil JH. Efficient magnetic switching in a correlated spin glass. Nat Commun 2023; 14:6127. [PMID: 37779120 PMCID: PMC10543544 DOI: 10.1038/s41467-023-41718-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/25/2023] [Accepted: 09/15/2023] [Indexed: 10/03/2023] Open
Abstract
The interplay between spin-orbit interaction and magnetic order is one of the most active research fields in condensed matter physics and drives the search for materials with novel, and tunable, magnetic and spin properties. Here we report on a variety of unique and unexpected observations in thin multiferroic Ge1-xMnxTe films. The ferrimagnetic order parameter in this ferroelectric semiconductor is found to switch direction under magnetostochastic resonance with current pulses many orders of magnitude lower as for typical spin-orbit torque systems. Upon a switching event, the magnetic order spreads coherently and collectively over macroscopic distances through a correlated spin-glass state. Utilizing these observations, we apply a novel methodology to controllably harness this stochastic magnetization dynamics.
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Affiliation(s)
- Juraj Krempaský
- Photon Science Division, Paul Scherrer Institut, CH-5232, Villigen, Switzerland.
| | - Gunther Springholz
- Institut für Halbleiter-und Festkörperphysik, Johannes Kepler Universität, A-4040, Linz, Austria
| | | | - Ondřej Caha
- Dept. of Condensed Matter Physics, Masaryk University, Kotlářská 267/2, 61137, Brno, Czech Republic
| | - Martin Gmitra
- Institute of Physics, P. J. Šafárik University in Košice, Park Angelinum 9, 040 01, Košice, Slovakia
- Institute of Experimental Physics, Slovak Academy of Sciences, Watsonova 47, 040 01, Košice, Slovakia
| | - Andreas Ney
- Institut für Halbleiter-und Festkörperphysik, Johannes Kepler Universität, A-4040, Linz, Austria
| | - C A F Vaz
- Photon Science Division, Paul Scherrer Institut, CH-5232, Villigen, Switzerland
| | - Cinthia Piamonteze
- Photon Science Division, Paul Scherrer Institut, CH-5232, Villigen, Switzerland
| | - Mauro Fanciulli
- LPMS, CY Cergy Paris Université, 95031, Cergy-Pontoise, France
| | - Dominik Kriegner
- Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53, Praha 6, Czech Republic
- Dept. of Condensed Matter Physics, Charles University, Ke Karlovu 5, 121 16, Praha 2, Czech Republic
| | - Jonas A Krieger
- Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, CH-5232, Villigen PSI, Switzerland
- Max Planck Institut für Mikrostrukturphysik, Weinberg 2, 06120, Halle, Germany
| | - Thomas Prokscha
- Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, CH-5232, Villigen PSI, Switzerland
| | - Zaher Salman
- Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, CH-5232, Villigen PSI, Switzerland
| | - Jan Minár
- New Technologies-Research Center University of West Bohemia, Plzeň, Czech Republic.
| | - J Hugo Dil
- Photon Science Division, Paul Scherrer Institut, CH-5232, Villigen, Switzerland.
- Institut de Physique, École Polytechnique Fédérale de Lausanne, CH-1015, Lausanne, Switzerland.
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6
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Ren L, Zhou C, Song X, Seng HT, Liu L, Li C, Zhao T, Zheng Z, Ding J, Feng YP, Chen J, Teo KL. Efficient Spin-Orbit Torque Switching in a Perpendicularly Magnetized Heusler Alloy MnPtGe Single Layer. ACS NANO 2023; 17:6400-6409. [PMID: 36942968 DOI: 10.1021/acsnano.2c11132] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Electrically manipulating magnetic moments by spin-orbit torque (SOT) has great potential applications in magnetic memories and logic devices. Although there have been rich SOT studies on magnetic heterostructures, low interfacial thermal stability and high switching current density still remain an issue. Here, highly textured, polycrystalline Heusler alloy MnxPtyGe (MPG) films with various thicknesses are directly deposited onto thermally oxidized silicon wafers. The perpendicular magnetization of the MPG single layer can be reversibly switched by electrical current pulses with a magnitude as low as 4.1 × 1010Am-2, as evidenced by both the electrical transport and the magnetic optical measurements. The switching is shown to arise from inversion symmetry breaking due to the vertical composition gradient of the films after sample annealing. The SOT effective fields of the samples are analyzed systematically. It is found that the SOT efficiency increases with the film thickness, suggesting a robust bulk-like behavior in the single magnetic layer. Furthermore, a memristive characteristic has been observed due to a multidomain switching property in the single-layer MPG device. Additionally, deterministic field-free switching of magnetization is observed when the electric current flows orthogonal to the direction of the in-plane compositional gradient due to the in-plane symmetry breaking. This work proves that the MPG is a good candidate to be utilized in high-density and efficient magnetoresistive random access memory devices and other spintronic applications.
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Affiliation(s)
- Lizhu Ren
- Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore
| | - Chenghang Zhou
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore
| | - Xiaohe Song
- Integrative Sciences and Engineering Programme, NUS Graduate School, National University of Singapore, 119077, Singapore
- Department of Physics, National University of Singapore, 117551 Singapore
| | - Herng Tun Seng
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore
| | - Liang Liu
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Chaojiang Li
- School of Mechanical and Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Tieyang Zhao
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore
| | - Zhenyi Zheng
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore
| | - Jun Ding
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore
| | - Yuan Ping Feng
- Department of Physics, National University of Singapore, 117551 Singapore
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore
| | - Kie Leong Teo
- Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore
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7
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Zheng D, Lan J, Fang B, Li Y, Liu C, Ledesma-Martin JO, Wen Y, Li P, Zhang C, Ma Y, Qiu Z, Liu K, Manchon A, Zhang X. High-Efficiency Magnon-Mediated Magnetization Switching in All-Oxide Heterostructures with Perpendicular Magnetic Anisotropy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203038. [PMID: 35776842 DOI: 10.1002/adma.202203038] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2022] [Revised: 06/30/2022] [Indexed: 06/15/2023]
Abstract
The search for efficient approaches to realize local switching of magnetic moments in spintronic devices has attracted extensive attention. One of the most promising approaches is the electrical manipulation of magnetization through electron-mediated spin torque. However, the Joule heat generated via electron motion unavoidably causes substantial energy dissipation and potential damage to spintronic devices. Here, all-oxide heterostructures of SrRuO3 /NiO/SrIrO3 are epitaxially grown on SrTiO3 single-crystal substrates following the order of the ferromagnetic transition metal oxide SrRuO3 with perpendicular magnetic anisotropy, insulating and antiferromagnetic NiO, and metallic transition metal oxide SrIrO3 with strong spin-orbit coupling. It is demonstrated that instead of the electron spin torques, the magnon torques present in the antiferromagnetic NiO layer can directly manipulate the perpendicular magnetization of the ferromagnetic layer. This magnon mechanism may significantly reduce the electron motion-related energy dissipation from electron-mediated spin currents. Interestingly, the threshold current density to generate a sufficient magnon current to manipulate the magnetization is one order of magnitude smaller than that in conventional metallic systems. These findings suggest a route for developing highly efficient all-oxide spintronic devices operated by magnon current.
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Affiliation(s)
- Dongxing Zheng
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Jin Lan
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, Institute of Advanced Materials Physics, School of Science, Tianjin University, Tianjin, 300350, China
| | - Bin Fang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yan Li
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Chen Liu
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - J Omar Ledesma-Martin
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yan Wen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Peng Li
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Chenhui Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yinchang Ma
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Ziqiang Qiu
- Department of Physics, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Kai Liu
- Physics Department, Georgetown University, Washington, DC, 20057, USA
| | | | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
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8
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Liu L, Zhou C, Zhao T, Yao B, Zhou J, Shu X, Chen S, Shi S, Xi S, Lan D, Lin W, Xie Q, Ren L, Luo Z, Sun C, Yang P, Guo EJ, Dong Z, Manchon A, Chen J. Current-induced self-switching of perpendicular magnetization in CoPt single layer. Nat Commun 2022; 13:3539. [PMID: 35725723 PMCID: PMC9209536 DOI: 10.1038/s41467-022-31167-w] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/30/2021] [Accepted: 06/07/2022] [Indexed: 11/30/2022] Open
Abstract
All-electric switching of perpendicular magnetization is a prerequisite for the integration of fast, high-density, and low-power magnetic memories and magnetic logic devices into electric circuits. To date, the field-free spin-orbit torque (SOT) switching of perpendicular magnetization has been observed in SOT bilayer and trilayer systems through various asymmetric designs, which mainly aim to break the mirror symmetry. Here, we report that the perpendicular magnetization of CoxPt100-x single layers within a special composition range (20 < x < 56) can be deterministically switched by electrical current in the absence of external magnetic field. Specifically, the Co30Pt70 shows the largest out-of-plane effective field efficiency and best switching performance. We demonstrate that this unique property arises from the cooperation of two structural mechanisms: the low crystal symmetry property at the Co platelet/Pt interfaces and the composition gradient along the thickness direction. Compared with that in bilayers or trilayers, the field-free switching in CoxPt100-x single layer greatly simplifies the SOT structure and avoids additional asymmetric designs. One challenge for spin-based electronics is the controlled and reliable switching of magnetization without magnetic fields. Here, Liu et al investigate a variety of compositions of CoPt, and determine the specific composition to maximize switching performance, potentially simplifying device design.
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Affiliation(s)
- Liang Liu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Chenghang Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Tieyang Zhao
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Bingqing Yao
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jing Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Xinyu Shu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Shaohai Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Shu Shi
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Shibo Xi
- Singapore Synchrotron Light Source (SSLS), National University of Singapore, 5 Research Link, Singapore, 117603, Singapore.,Institute of Sustainability for Chemicals, Energy and Environment, A*STAR (Agency for Science, Technology and Research), 1 Pesek Road, Jurong Island, Singapore
| | - Da Lan
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Weinan Lin
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Qidong Xie
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Lizhu Ren
- Department of Electrical and Computing Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Zhaoyang Luo
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Chao Sun
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Ping Yang
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.,Singapore Synchrotron Light Source (SSLS), National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Zhili Dong
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | | | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore. .,Suzhou Research Institute, National University of Singapore, Suzhou, 215123, China. .,Chongqing Research Institute, National University of Singapore, Chongqing, 401120, China. .,Institute of Material Research and Engineering, A*STAR, Singapore, 138634, Singapore.
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9
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Liu L, Qin Q, Lin W, Li C, Xie Q, He S, Shu X, Zhou C, Lim Z, Yu J, Lu W, Li M, Yan X, Pennycook SJ, Chen J. Current-induced magnetization switching in all-oxide heterostructures. NATURE NANOTECHNOLOGY 2019; 14:939-944. [PMID: 31501531 DOI: 10.1038/s41565-019-0534-7] [Citation(s) in RCA: 49] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2019] [Accepted: 07/23/2019] [Indexed: 06/10/2023]
Abstract
The electrical switching of magnetization through spin-orbit torque (SOT)1 holds promise for application in information technologies, such as low-power, non-volatile magnetic memory. Materials with strong spin-orbit coupling, such as heavy metals2-4 and topological insulators5,6, can convert a charge current into a spin current. The spin current can then execute a transfer torque on the magnetization of a neighbouring magnetic layer, usually a ferromagnetic metal like CoFeB, and reverse its magnetization. Here, we combine a ferromagnetic transition metal oxide7 with an oxide with strong spin-orbit coupling8 to demonstrate all-oxide SOT devices. We show current-induced magnetization switching in SrIrO3/SrRuO3 bilayer structures. By controlling the magnetocrystalline anisotropy of SrRuO3 on (001)- and (110)-oriented SrTiO3 (STO) substrates, we designed two types of SOT switching schemes. For the bilayer on the STO(001) substrate, a magnetic-field-free switching was achieved, which remained undisturbed even when the external magnetic field reached 100 mT. The charge-to-spin conversion efficiency for the bilayer on the STO(110) substrate ranged from 0.58 to 0.86, depending on the directionality of the current flow with respect to the crystalline symmetry. All-oxide SOT structures may help to realize field-free switching through a magnetocrystalline anisotropy design.
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Affiliation(s)
- Liang Liu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Qing Qin
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Weinan Lin
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Changjian Li
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Qidong Xie
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Shikun He
- Data Storage Institute, A*STAR (Agency for Science, Technology, and Research), Singapore, Singapore
| | - Xinyu Shu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Chenghang Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Zhishiuh Lim
- NUSNNI-Nanocore, National University of Singapore, Singapore, Singapore
| | - Jihang Yu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Wenlai Lu
- Materials Genome Institute, Shanghai University, Shanghai, China
| | - Mengsha Li
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Xiaobing Yan
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
- College of Electron and Information Engineering, Hebei University, Hebei, China
| | - Stephen J Pennycook
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.
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