Extremely flat band in bilayer graphene

Chaos-Assisted Dynamical Tunneling in Flat Band Superwires

Recent theoretical investigations have revealed unconventional transport mechanisms within high Brillouin zones of two-dimensional superlattices. Electrons can navigate along channels we call superwires, gently guided without brute force confinement. Such dynamical confinement is caused by weak superlattice deflections, markedly different from the static or energetic confinement observed in traditional wave guides or one-dimensional electron wires. The quantum properties of superwires give rise to elastic dynamical tunneling, linking disjoint regions of the corresponding classical phase space, and enabling the emergence of several parallel channels. This paper provides the underlying theory and mechanisms that facilitate dynamical tunneling assisted by chaos in periodic lattices. Moreover, we show that the mechanism of dynamical tunneling can be effectively conceptualized through the lens of a paraxial approximation. Our results further reveal that superwires predominantly exist within flat bands, emerging from eigenstates that represent linear combinations of conventional degenerate Bloch states. Finally, we quantify tunneling rates across various lattice configurations and demonstrate that tunneling can be suppressed in a controlled fashion, illustrating potential implications in future nanodevices.

Vertical Stress Induced Anomalous Spectral Shift of 13.17° Moiré Superlattice in Twist Bilayer Graphene

The electronic states of the twist bilayer graphene (TBG) moiré superlattice are usually regulated by the rotation angle, applied electric field, applied magnetic field, carrier concentration and applied stress, and thus exhibit novel physical properties. Squeezing, that is, applying vertical compressive stress to the graphene layers, has profound significance in regulating the photoelectric properties of the moiré superlattice and constructing optical nanodevices. This paper presents the photoelectric properties of a TBG moiré superlattice with a twist angle of 13.17° and tunability under vertical stress. Interlayer distance decreases nonlinearly with compressive stress from 0 to 10 GPa, giving rise to weakened interlayer coupling compared to a Bernal-stacked graphene bilayer and an enhanced repulsive effect between the layers. The calculated Bloch wave functions show a strong dependence on stress. With the increase in stress, the band gaps of the system present a nonlinear increase, which induces and enhances the interlayer charge transfer and leads to the redshift of the absorption spectrum of the moiré superlattice system. By analyzing the differences in the Bloch wave function and charge density differences, we explain the nature of the physical mechanism of photoelectric property change in a stress-regulated twist superlattice system. This study provides a theoretical basis for the identification of piezoelectric properties and the stress regulation of photoelectric devices based on TBG, and also provides a feasible method for regulating the performance of TBG.

Strong gate-tunability of flat bands in bilayer graphene due to moiré encapsulation between hBN monolayers

When using hexagonal boron-nitride (hBN) as a substrate for graphene, the resulting moiré pattern creates secondary Dirac points. By encapsulating a multilayer graphene within aligned hBN sheets the controlled moiré stacking may offer even richer benefits. Using advanced tight-binding simulations on atomistically-relaxed heterostructures, here we show that the gap at the secondary Dirac point can be opened in selected moiré-stacking configurations, and is independent of any additional vertical gating of the heterostructure. On the other hand, gating can broadly tune the gap at the principal Dirac point, and may thereby strongly compress the first moiré mini-band in width against the moiré-induced gap at the secondary Dirac point. We reveal that in hBN-encapsulated bilayer graphene this novel mechanism can lead to isolated bands flatter than 10 meV under moderate gating, hence presenting a convenient pathway towards electronically-controlled strongly-correlated states on demand.

Breaking of Inversion Symmetry and Interlayer Electronic Coupling in Bilayer Graphene Heterostructure by Structural Implementation of High Electric Displacement Fields

Controlling the interlayer coupling in two-dimensional (2D) materials generates novel electronic and topological phases. Its effective implementation is commonly done with a transverse electric field. However, phases generated by high displacement fields are elusive in this standard approach. Here, we introduce an exceptionally large displacement field by structural modification of a model system: AB-stacked bilayer graphene (BLG) on a SiC(0001) surface. We show that upon intercalation of gadolinium, electronic states in the top graphene layers exhibit a significant difference in the on-site potential energy, which effectively breaks the interlayer coupling between them. As a result, for energies close to the corresponding Dirac points, the BLG system behaves like two electronically isolated single graphene layers. This is proven by local scanning tunneling microscopy (STM)/spectroscopy, corroborated by density functional theory, tight binding, and multiprobe STM transport. The work presents metal intercalation as a promising approach for the synthesis of 2D graphene heterostructures with electronic phases generated by giant displacement fields.

One-dimensional metal thiophosphate nanowires by cluster assembly

One-dimensional (1D) atomic wires with precise structures are not only excellent platforms for exploring novel 1D physics, but also promising building blocks to assemble functional materials and devices. However, stable atomic wires remain limited and are hard to search using global optimization algorithms. Inspired by the emerging layered ternary chalcogenides, here we offer a design strategy for rational assembly of metal thiophosphate (MPS₄) nanowires based on the concept of a superatom. ortho-Thiophosphate [PS₄] clusters are linked by proper main-group and transition metal atoms to form closed electronic shells, endowing the assembled nanowires with high dynamic and thermal stabilities. Diverse and exotic electronic band structures are hosted by these ternary MPS₄ nanowires, such as the coexistence of a spin-orbit Dirac point protected by nonsymmorphic symmetry and a flat band near the Fermi level, with nanowires being bipolar magnetic semiconductors for electrical control of spin orientation. These 1D Lego blocks can be further built into higher-order architectures via vdW interaction or covalent bonding. This assembly approach generally produces stable atomic wires with designated compositions and structure symmetries to induce peculiar quantum states for future applications.

Suppression of Intervalley Coupling in Graphene via Potassium Doping

The quantum interference patterns induced by impurities in graphene can form the (√3 × √3)R30° superlattice with intervalley scattering. This superlattice can lead to the folded Dirac cone at the center of Brillouin zone by coupling two non-equivalent valleys. Using angle-resolved photoemission spectroscopy (ARPES), we report the observation of suppression of the folded Dirac cone in mono- and bilayer graphene upon potassium doping. The intervalley coupling with chiral symmetry broken can persist upon a light potassium-doped level but be ruined at the heavily doped level. Meanwhile, the folded Dirac cone can be suppressed by the renormalization of the Dirac band with potassium doping. Our results demonstrate that the suppression of the intervalley scattering pattern by potassium doping could pave the way toward the realization of novel chiraltronic devices in superlattice graphene.

Phase transition from a nonmagnetic to a ferromagnetic state in a twisted bilayer graphene nanoflake: the role of electronic pressure on the magic-twist

The electronic properties of a bilayer graphene nanoflake (BLGNF) depend sensitively upon the strength of the inter-layer electronic coupling (IEC) energy. Upon tuning the IEC via changing the twist angle between the layer, a ferromagnetic gap state emerges in a BLGNF due to spontaneous symmetry breaking at the magic-twist. Herein, using first-principles density functional theory, we demonstrate the magic twist angle (θ_M) in a bilayer graphene nanoflake at which the transition from a nonmagnetic to a ferromagnetic phase occurs can be tuned by exerting uniaxial electronic pressure (P_e). Electronic pressure, which provides another route to control the IEC, is simulated by varying the interlayer spacing in the nanoflake. Our result shows a P_e of 0.125 GPa corresponding to interlayer spacing (h) of 3.58 Å yielding a magic twist angle of ∼1° and a negative value of P_e (-0.042 GPa) at h = 3.38 Å producing a θ_M of ∼2.4°. The higher value of θ_M at a negative P_e (smaller h) is attributed to an increase in the energy gap due to strong inter-layer electronic coupling energy in the nanoflake under uniaxial compression. This finding in the nanoflake agrees with the experimental observation in two-dimensional bilayer graphene (M. Yankowitz, S. Chen, H. Polshyn, Y. Zhang, K. Watanabe, T. Taniguchi, D. Graf, A. F. Young and C. R. Dean, Science, 2019, 363, 1059-1064) that indicated an increase in the magic angle value for the phase transition upon application of hydrostatic pressure.

Realizing Valley-Polarized Energy Spectra in Bilayer Graphene Quantum Dots via Continuously Tunable Berry Phases

The Berry phase plays an important role in determining many physical properties of quantum systems. However, tuning the energy spectrum of a quantum system via Berry phase is comparatively rare because the Berry phase is usually a fixed constant. Here, we report the realization of an unusual valley-polarized energy spectra via continuously tunable Berry phases in Bernal-stacked bilayer graphene quantum dots. In our experiment, the Berry phase of electron orbital states is continuously tuned from about π to 2π by perpendicular magnetic fields. When the Berry phase equals π or 2π, the electron states in the two inequivalent valleys are energetically degenerate. By altering the Berry phase to noninteger multiples of π, large and continuously tunable valley-polarized energy spectra are realized. Our result reveals the Berry phase's essential role in valleytronics and the observed valley splitting, on the order of 10 meV at a magnetic field of 1 T, is about 100 times larger than Zeeman splitting for spin, shedding light on graphene-based valleytronics.

Probing Flat Band Physics in Spin Ice Systems via Polarized Neutron Scattering

In this Letter, we illustrate how polarized neutron scattering can be used to isolate the spin-spin correlations of modes forming flat bands in a frustrated magnetic system hosting a classical spin liquid phase. In particular, we explain why the nearest-neighbor spin ice model, whose interaction matrix has two flat bands, produces a dispersionless (i.e., "flat") response in the non-spin-flip (NSF) polarized neutron scattering channel and demonstrate that NSF scattering is a highly sensitive probe of correlations induced by weak perturbations that lift the flat band degeneracy. We use this to explain the experimentally measured dispersive (i.e., nonflat) NSF channel of the dipolar spin ice compound Ho_{2}Ti_{2}O_{7}.

Electronic Properties of Oxidized Graphene: Effects of Strain and an Electric Field on Flat Bands and the Energy Gap

A multiscale modeling and simulation approach, including first-principles calculations, ab initio molecular dynamics simulations, and a tight binding approach, is employed to study band flattening of the electronic band structure of oxidized monolayer graphene. The width of flat bands can be tuned by strain, the external electric field, and the density of functional groups and their distribution. A transition to a conducting state is found for monolayer graphene with impurities when it is subjected to an electric field of ∼1.0 V/Å. Several parallel impurity-induced flat bands appear in the low-energy spectrum of monolayer graphene when the number of epoxy groups is changed. The width of the flat band decreases with an increase in tensile strain but is independent of the electric field strength. Here an alternative and easy route for obtaining band flattening in thermodynamically stable functionalized monolayer graphene is introduced. Our work discloses a new avenue for research on band flattening in monolayer graphene.

Developing Graphene-Based Moiré Heterostructures for Twistronics

Graphene-based moiré heterostructures are strongly correlated materials, and they are considered to be an effective platform to investigate the challenges of condensed matter physics. This is due to the distinct electronic properties that are unique to moiré superlattices and peculiar band structures. The increasing research on strongly correlated physics via graphene-based moiré heterostructures, especially unconventional superconductors, greatly promotes the development of condensed matter physics. Herein, the preparation methods of graphene-based moiré heterostructures on both in situ growth and assembling monolayer 2D materials are discussed. Methods to improve the quality of graphene and optimize the transfer process are presented to mitigate the limitations of low-quality graphene and damage caused by the transfer process during the fabrication of graphene-based moiré heterostructures. Then, the topological properties in various graphene-based moiré heterostructures are reviewed. Furthermore, recent advances regarding the factors that influence physical performances via a changing twist angle, the exertion of strain, and regulation of the dielectric environment are presented. Moreover, various unique physical properties in graphene-based moiré heterostructures are demonstrated. Finally, the challenges faced during the preparation and characterization of graphene-based moiré heterostructures are discussed. An outlook for the further development of moiré heterostructures is also presented.

Epitaxial Growth of Uniform Single-Layer and Bilayer Graphene with Assistance of Nitrogen Plasma

Graphene was reported as the first-discovered two-dimensional material, and the thermal decomposition of SiC is a feasible route to prepare graphene films. However, it is difficult to obtain a uniform single-layer graphene avoiding the coexistence of multilayer graphene islands or bare substrate holes, which give rise to the degradation of device performance and becomes an obstacle for the further applications. Here, with the assistance of nitrogen plasma, we successfully obtained high-quality single-layer and bilayer graphene with large-scale and uniform surface via annealing 4H-SiC(0001) wafers. The highly flat surface and ordered terraces of the samples were characterized using in situ scanning tunneling microscopy. The Dirac bands in single-layer and bilayer graphene were measured using angle-resolved photoemission spectroscopy. X-ray photoelectron spectroscopy combined with Raman spectroscopy were used to determine the composition of the samples and to ensure no intercalation or chemical reaction of nitrogen with graphene. Our work has provided an efficient way to obtain the uniform single-layer and bilayer graphene films grown on a semiconductive substrate, which would be an ideal platform for fabricating two-dimensional devices based on graphene.

An Ab Initio Study of Lithization of Two-Dimensional Silicon-Carbon Anode Material for Lithium-Ion Batteries

This work is devoted to a first-principles study of changes in the structural, energetic, and electronic properties of silicene anodes during their lithium filling. Anodes were presented by silicene on carbon substrate and free-standing silicene. The ratio of the amount of lithium to silicon varied in the range from 0.06 to 1.125 for silicene on bilayer graphene and from 0.06 to 2.375 for free-standing silicene. It is shown that the carbon substrate reduces the stability of the silicene sheet. Silicene begins to degrade when the ratio of lithium to silicon (N_Li/N_Si) exceeds ~0.87, and at N_Li/N_Si = 0.938, lithium penetrates into the space between the silicene sheet and the carbon substrate. At certain values of the Li/Si ratio in the silicene sheet, five- and seven-membered rings of Si atoms can be formed on the carbon substrate. The presence of two-layer graphene imparts conductive properties to the anode. These properties can periodically disappear during the adsorption of lithium in the absence of a carbon substrate. Free-standing silicene adsorbed by lithium loses its stability at N_Li/N_Si = 1.375.

Emergence of Ferromagnetism Due to Spontaneous Symmetry Breaking in a Twisted Bilayer Graphene Nanoflex

Twisted bilayer graphene exhibits many intriguing behaviors ranging from superconductivity to the anomalous Hall effect to ferromagnetism at a magic angle of ∼1°. Here, using a first-principles approach, we reveal ferromagnetism in a twisted bilayer graphene nanoflex. Our results demonstrate that when the energy gap of a twisted nanoflex approaches zero, electronic instability occurs and a ferromagnetic gap state emerges spontaneously to lower the energy. Unlike the observed ferromagnetism at a magic angle in the graphene bilayer, we notice the ferromagnetic phase appearing aperiodically between 0 and 30° in the twisted nanoflex. The origin of electronic instability at various twist angles is ascribed to the several higher-symmetry phases that are broken to lower the energy resulting from an aperiodic modulation of the interlayer interaction in the nanoflex. Besides unraveling a spin-pairing mechanism for the reappearance of the nonmagnetic phase, we have found orbitals at the boundary of nanoflex contributing to ferromagnetism.

Performance and characterization of the FinEstBeAMS beamline at the MAX IV Laboratory

FinEstBeAMS (Finnish-Estonian Beamline for Atmospheric and Materials Sciences) is a multidisciplinary beamline constructed at the 1.5 GeV storage ring of the MAX IV synchrotron facility in Lund, Sweden. The beamline covers an extremely wide photon energy range, 4.5-1300 eV, by utilizing a single elliptically polarizing undulator as a radiation source and a single grazing-incidence plane grating monochromator to disperse the radiation. At photon energies below 70 eV the beamline operation relies on the use of optical and thin-film filters to remove higher-order components from the monochromated radiation. This paper discusses the performance of the beamline, examining such characteristics as the quality of the gratings, photon energy calibration, photon energy resolution, available photon flux, polarization quality and focal spot size.

Quasiparticle electronic structure of two-dimensional heterotriangulene-based covalent organic frameworks adsorbed on Au(111)

The modular nature and unique electronic properties of two-dimensional (2D) covalent organic frameworks (COFs) make them an attractive option for applications in catalysis, optoelectronics, and spintronics. The fabrications of such devices often involve interfaces formed between COFs and substrates. In this work, we employ the first-principlesGWapproach to accurately determine the quasiparticle electronic structure of three 2D carbonyl bridged heterotriangulene-based COFs featuring honeycomb-kagome lattice, with their properties ranging from a semi-metal to a wide-gap semiconductor. Moreover, we study the adsorption of these COFs on Au(111) surface and characterize the quasiparticle electronic structure at the heterogeneous COF/Au(111) interfaces. To reduce the computational cost, we apply the recently developed dielectric embeddingGWapproach and show that our results agree with existing experimental measurement on the interfacial energy level alignment. Our calculations illustrate how the many-body dielectric screening at the interface modulates the energies and shapes of the Dirac bands, the effective masses of semiconducting COFs, as well as the Fermi velocity of the semi-metallic COF.

Controlling the macroscopic electrical properties of reduced graphene oxide by nanoscale writing of electronic channels

The allure of all-carbon electronics stems from the spread of its physical properties across all its allotropes. The scheme also harbours unique challenges, such as tunability of band gap, variability of doping and defect control. Here, we explore the technique of scanning probe tip-induced nanoscale reduction of graphene oxide (GO), which nucleates conducting, [Formula: see text] rich graphitic regions on the insulating GO background. The flexibility of direct writing is supplemented with control over the degree of reduction and tunability of band gap through macroscopic control parameters. The fabricated reduced GO channels and ensuing devices are investigated via spectroscopy and temperature and bias-dependent electrical transport and correlated with spatially resolved electronic properties, using surface potentiometry. The presence of carrier localization effects, induced by the phase-separated [Formula: see text] domains, and large local electric field fluctuations are reflected in the non-linear transport across the channels. Together, the results indicate a complex transport phenomenon, which may be variously dominated by tunnelling or variable range hopping or activated depending on the electronic state of the material.

Single-layer polymeric tetraoxa[8]circulene modified by s-block metals: toward stable spin qubits and novel superconductors

Tunable electronic properties of low-dimensional materials have been the object of extensive research, as such properties are highly desirable in order to provide flexibility in the design and optimization of functional devices. In this study, we account for the fact that such properties can be tuned by embedding diverse metal atoms and theoretically study a series of new organometallic porous sheets based on two-dimensional tetraoxa[8]circulene (TOC) polymers doped with alkali or alkaline-earth metals. The results reveal that the metal-decorated sheets change their electronic structure from semiconducting to metallic behaviour due to n-doping. Complete active space self-consistent field (CASSCF) calculations reveal a unique open-shell singlet ground state in the TOC-Ca complex, which is formed by two closed-shell species. Moreover, Ca becomes a doublet state, which is promising for magnetic quantum bit applications due to the long spin coherence time. Ca-doped TOC also demonstrates a high density of states in the vicinity of the Fermi level and induced superconductivity. Using the ab initio Eliashberg formalism, we find that the TOC-Ca polymers are phonon-mediated superconductors with a critical temperature T_C = 14.5 K, which is within the range of typical carbon based superconducting materials. Therefore, combining the proved superconductivity and the long spin lifetime in doublet Ca, such materials could be an ideal platform for the realization of quantum bits.

Ultrahigh Ballistic Resistance of Twisted Bilayer Graphene

Graphene is a good candidate for protective material owing to its extremely high stiffness and high strength-to-weight ratio. However, the impact performance of twisted bilayer graphene is still obscure. Herein we have investigated the ballistic resistance capacity of twisted bilayer graphene compared to that of AA-stacked bilayer graphene using molecular dynamic simulations. The energy propagation processes are identical, while the ballistic resistance capacity of the twisted bilayer graphene is almost two times larger than the AA-bilayer graphene. The enhanced capacity of the twisted bilayer graphene is assumed to be caused by the mismatch between the two sheets of graphene, which results in earlier fracture of the first graphene layer and reduces the possibility of penetration.

Overdoping Graphene beyond the van Hove Singularity

At very high doping levels the van Hove singularity in the π^{*} band of graphene becomes occupied and exotic ground states possibly emerge, driven by many-body interactions. Employing a combination of ytterbium intercalation and potassium adsorption, we n dope epitaxial graphene on silicon carbide past the π^{*} van Hove singularity, up to a charge carrier density of 5.5×10^{14}  cm^{-2}. This regime marks the unambiguous completion of a Lifshitz transition in which the Fermi surface topology has evolved from two electron pockets into a giant hole pocket. Angle-resolved photoelectron spectroscopy confirms these changes to be driven by electronic structure renormalizations rather than a rigid band shift. Our results open up the previously unreachable beyond-van-Hove regime in the phase diagram of epitaxial graphene, thereby accessing an unexplored landscape of potential exotic phases in this prototype two-dimensional material.

Twistronics in Graphene, from Transfer Assembly to Epitaxy

The twistronics, which is arising from the moiré superlattice of the small angle between twisted bilayers of 2D materials like graphene, has attracted much attention in the field of 2D materials and condensed matter physics. The novel physical properties in such systems, like unconventional superconductivity, come from the dispersionless flat band that appears when the twist reaches some magic angles. By tuning the filling of the fourfold degeneracy flat bands, the desired effects are induced due to the strong correlation of the degenerated Bloch electrons. In this article, we review the twistronics in twisted bi- and multi-layer graphene (TBG and TMG), which is formed both by transfer assembly of exfoliated monolayer graphene and epitaxial growth of multilayer graphene on SiC substrates. Starting from a brief history, we then introduce the theory of flat band in TBG. In the following, we focus on the major achievements in this field: (a) van Hove singularities and charge order; (b) superconductivity and Mott insulator in TBG and (c) transport properties in TBG. In the end, we give the perspective of the rising materials system of twistronics, epitaxial multilayer graphene on the SiC.

Flatband in a three-dimensional tungsten nitride compound

Herein, the flatband of a W₁N₂ crystal is theoretically investigated. It is revealed that the flatband can be well-described by a tight-binding model of the N₁₂ skeleton, where the dispersion of the flatband is governed by both the ppσ bonding strength (V_ppσ) and the ppπ bonding strength (V_ppπ) between the nearest-neighbor N atoms. It is also found that the proper strength of the ppπ bonding between neighboring N atoms plays a prime role in the formation of the flatband. In addition, when the compound is doped with holes, the electrons at the flatband are fully polarized, showing a ferromagnetic character. This behavior has a weak correlation with the on-site Coulomb interaction U. Moreover, several three-dimensional compounds possessing flatbands in the whole k space are predicted.

Methods for the construction of interacting many-body Hamiltonians with compact localized states in geometrically frustrated clusters

Adding interactions to many-body Hamiltonians of geometrically frustrated lattices often leads to diminished subspaces of localized states. In this paper, we show how to construct interacting many-body Hamiltonians, starting from the non-interacting tight-binding Hamiltonians, that preserve or even expand these subspaces. The methods presented involve modifications in the one-body network representation of the many-body Hamiltonians which generate new interacting terms in these Hamiltonians. The subspace of many-particle localized states can be preserved in the interacting Hamiltonian, by projecting the interacting terms onto the subspace of many-body extended states or by constructing the interacting Hamiltonian applying origami rules to the network. Expanded subspaces of localized states are found if interacting terms that mix subspaces with different number of particles are introduced. Furthermore, we present numerical methods for the determination of many-body localized states that allows one to address larger clusters and larger number of particles than those accessible by full diagonalization of the interacting Hamiltonian. These methods rely on the generalization of the concept of compact localized state in the network. Finally, we suggest a method to determine localized states that use a considerable fraction of the network.

Origin of the Flat Band in Heavily Cs-Doped Graphene

A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we show that the flat band in graphene can be achieved by sandwiching a graphene monolayer by two cesium (Cs) layers. We investigate the flat band by a combination of angle-resolved photoemission spectroscopy experiment and the calculations. Our work highlights that charge transfer, zone folding of graphene bands, and the covalent bonding between C and Cs atoms are the origin of the flat energy band formation. Analysis of the Stoner criterion for the flat band suggests the presence of a ferromagnetic instability. The presented approach is an alternative route for obtaining flat band materials to twisting bilayer graphene which yields thermodynamically stable flat band materials in large areas.

Room temperature strain-induced Landau levels in graphene on a wafer-scale platform

Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and the electrons behave as if they were under the influence of a magnetic field. Previously, these strain-induced pseudomagnetic fields have been explored on the nano- and micrometer-scale using scanning probe and transport measurements. Heteroepitaxial strain, in contrast, is a wafer-scale engineering method. Here, we show that pseudomagnetic fields can be generated in graphene through wafer-scale epitaxial growth. Shallow triangular nanoprisms in the SiC substrate generate strain-induced uniform fields of 41 T, enabling the observation of strain-induced Landau levels at room temperature, as detected by angle-resolved photoemission spectroscopy, and confirmed by model calculations and scanning tunneling microscopy measurements. Our work demonstrates the feasibility of exploiting strain-induced quantum phases in two-dimensional Dirac materials on a wafer-scale platform, opening the field to new applications.

Ultrafast Unbalanced Electron Distributions in Quasicrystalline 30° Twisted Bilayer Graphene

Ultrafast carrier dynamics in a graphene system are very important in terms of optoelectronic devices. Recently, a twisted bilayer graphene has been discovered that possesses interesting electronic properties owing to strong modifications in interlayer couplings. Thus, a better understanding of ultrafast carrier dynamics in a twisted bilayer graphene is highly desired. Here, we reveal the unbalanced electron distributions in a quasicrystalline 30° twisted bilayer graphene (QCTBG), using time- and angle-resolved photoemission spectroscopy on the femtosecond time scale. We distinguish time-dependent electronic behavior between the upper- and lower-layer Dirac cones and gain insight into the dynamical properties of replica bands, which show characteristic signatures due to Umklapp scatterings. The experimental results are reproduced by solving a set of rate equations among the graphene layers and substrate. We find that the substrate buffer layer plays a key role in initial carrier injections to the upper and lower layers. Our results demonstrate that QCTBG can be a promising element for future devices.