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Behera N, Chaurasiya AK, González VH, Litvinenko A, Bainsla L, Kumar A, Khymyn R, Awad AA, Fulara H, Åkerman J. Ultra-Low Current 10 nm Spin Hall Nano-Oscillators. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305002. [PMID: 37990141 DOI: 10.1002/adma.202305002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/26/2023] [Revised: 10/19/2023] [Indexed: 11/23/2023]
Abstract
Nano-constriction based spin Hall nano-oscillators (SHNOs) are at the forefront of spintronics research for emerging technological applications, such as oscillator-based neuromorphic computing and Ising Machines. However, their miniaturization to the sub-50 nm width regime results in poor scaling of the threshold current. Here, it shows that current shunting through the Si substrate is the origin of this problem and studies how different seed layers can mitigate it. It finds that an ultra-thin Al2 O3 seed layer and SiN (200 nm) coated p-Si substrates provide the best improvement, enabling us to scale down the SHNO width to a truly nanoscopic dimension of 10 nm, operating at threshold currents below 30 μ $\umu$ A. In addition, the combination of electrical insulation and high thermal conductivity of the Al2 O3 seed will offer the best conditions for large SHNO arrays, avoiding any significant temperature gradients within the array. The state-of-the-art ultra-low operational current SHNOs hence pave an energy-efficient route to scale oscillator-based computing to large dynamical neural networks of linear chains or 2D arrays.
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Affiliation(s)
- Nilamani Behera
- Physics Department, University of Gothenburg, Gothenburg, 412 96, Sweden
| | | | - Victor H González
- Physics Department, University of Gothenburg, Gothenburg, 412 96, Sweden
| | - Artem Litvinenko
- Physics Department, University of Gothenburg, Gothenburg, 412 96, Sweden
| | - Lakhan Bainsla
- Physics Department, University of Gothenburg, Gothenburg, 412 96, Sweden
- Department of Physics, Indian Institute of Technology Ropar, Roopnagar, 140001, India
| | - Akash Kumar
- Physics Department, University of Gothenburg, Gothenburg, 412 96, Sweden
- Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan
- Center for Science and Innovation in Spintronics, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan
| | - Roman Khymyn
- Physics Department, University of Gothenburg, Gothenburg, 412 96, Sweden
| | - Ahmad A Awad
- Physics Department, University of Gothenburg, Gothenburg, 412 96, Sweden
- Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan
- Center for Science and Innovation in Spintronics, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan
| | - Himanshu Fulara
- Department of Physics, Indian Institute of Technology Roorkee, Roorkee, 247667, India
| | - Johan Åkerman
- Physics Department, University of Gothenburg, Gothenburg, 412 96, Sweden
- Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan
- Center for Science and Innovation in Spintronics, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan
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2
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Zhou X, Zhang RW, Yang X, Li XP, Feng W, Mokrousov Y, Yao Y. Disorder- and Topology-Enhanced Fully Spin-Polarized Currents in Nodal Chain Spin-Gapless Semimetals. PHYSICAL REVIEW LETTERS 2022; 129:097201. [PMID: 36083680 DOI: 10.1103/physrevlett.129.097201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2021] [Revised: 04/27/2022] [Accepted: 08/03/2022] [Indexed: 06/15/2023]
Abstract
Recently discovered high-quality nodal chain spin-gapless semimetals MF_{3} (M=Pd, Mn) feature an ultraclean nodal chain in the spin up channel residing right at the Fermi level and displaying a large spin gap leading to a 100% spin polarization of transport properties. Here, we investigate both intrinsic and extrinsic contributions to anomalous and spin transport in this class of materials. The dominant intrinsic origin is found to originate entirely from the gapped nodal chains without the entanglement of any other trivial bands. The side-jump mechanism is predicted to be negligibly small, but intrinsic skew scattering enhances the intrinsic Hall and Nernst signals significantly, leading to large values of respective conductivities. Our findings open a new material platform for exploring strong anomalous and spin transport properties in magnetic topological semimetals.
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Affiliation(s)
- Xiaodong Zhou
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Run-Wu Zhang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Xiuxian Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Xiao-Ping Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Wanxiang Feng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Yuriy Mokrousov
- Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
- Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
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Chattaraj A, Joulie S, Serin V, Claverie A, Kumar V, Kanjilal A. Crucial role of oxygen on the bulk and surface electronic properties of stable β phase of tungsten. Sci Rep 2022; 12:3865. [PMID: 35264628 PMCID: PMC8907277 DOI: 10.1038/s41598-022-07658-7] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/22/2021] [Accepted: 02/07/2022] [Indexed: 11/23/2022] Open
Abstract
The A15 β phase of tungsten has recently attracted great interest for spintronic applications due to the finding of giant spin-Hall effect. As β phase is stabilized by oxygen, we have studied the electronic structure of O-doped β-W from first principles calculations. It is found that 20 at.% O-doping makes β phase lower in energy than α-W. These results are in good agreement with energy dispersive X-ray spectroscopy which also shows ~ 16.84 at.% O in 60 nm thick W films. The latter has predominantly β phase as confirmed by grazing incidence X-ray diffraction (XRD). The simulated XRD of bulk β having 15.79 at.% O also agrees with XRD results. Oxygen binds strongly on the surface and affects the Dirac fermion behavior in pure β-W. There is structural disorder, O-inhomogeneity, and higher density-of-states in O-doped β-W at EF compared with pure α. These results are promising to understand the properties of β-W.
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Affiliation(s)
- Ananya Chattaraj
- Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Tehsil Dadri, Gautam Buddha Nagar, Uttar Pradesh, 201 314, India
| | - Sebastien Joulie
- CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055, Toulouse, France
| | - Virginie Serin
- CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055, Toulouse, France
| | - Alain Claverie
- CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055, Toulouse, France
| | - Vijay Kumar
- Center for Informatics, School of Natural Sciences, Shiv Nadar University, NH91, Tehsil Dadri, Gautam Buddha Nagar, Uttar Pradesh, 201 314, India. .,Dr. Vijay Kumar Foundation, 1969 Sector 4, Gurgaon, Haryana, 122001, India.
| | - Aloke Kanjilal
- Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Tehsil Dadri, Gautam Buddha Nagar, Uttar Pradesh, 201 314, India.
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Jiang W, de Sousa DJP, Wang JP, Low T. Giant Anomalous Hall Effect due to Double-Degenerate Quasiflat Bands. PHYSICAL REVIEW LETTERS 2021; 126:106601. [PMID: 33784124 DOI: 10.1103/physrevlett.126.106601] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2020] [Accepted: 01/19/2021] [Indexed: 06/12/2023]
Abstract
We propose a novel approach to achieve a giant anomalous Hall effect (AHE) in materials with flat bands (FBs). FBs are accompanied by small electronic bandwidths, which consequently increases the momentum separation (K) within pair of Weyl points and, thus, the integrated Berry curvature. Starting from a simple model with a single pair of Weyl nodes, we demonstrated the increase of K and the AHE by decreasing the bandwidth. It is further expanded to a realistic pyrochlore lattice model with characteristic double-degenerated FBs, where we discovered a giant AHE while maximizing the K with nearly vanishing band dispersion of FBs. We identify that such a model system can be realized and modulated through strain engineering in both pyrochlore and spinel compounds based on first-principles calculations, validating our theoretical model and providing a feasible platform for experimental exploration.
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Affiliation(s)
- Wei Jiang
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USA
| | - Duarte J P de Sousa
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USA
| | - Jian-Ping Wang
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USA
| | - Tony Low
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USA
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Shao Q, Li P, Liu L, Yang H, Fukami S, Razavi A, Wu H, Wang K, Freimuth F, Mokrousov Y, Stiles MD, Emori S, Hoffmann A, Åkerman J, Roy K, Wang JP, Yang SH, Garello K, Zhang W. Roadmap of spin-orbit torques. IEEE TRANSACTIONS ON MAGNETICS 2021; 57:10.48550/arXiv.2104.11459. [PMID: 37057056 PMCID: PMC10091395 DOI: 10.48550/arxiv.2104.11459] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers, such as magnetic insulators, antiferromagnets, and ferrimagnets. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.
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Affiliation(s)
- Qiming Shao
- Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology
| | - Peng Li
- Department of Electrical and Computer Engineering, Auburn University
| | - Luqiao Liu
- Electrical Engineering and Computer Science, Massachusetts Institute of Technology
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering, National University of Singapore
| | - Shunsuke Fukami
- Research Institute of Electrical Communication, Tohoku University
| | - Armin Razavi
- Department of Electrical and Computer Engineering, University of California, Los Angeles
| | - Hao Wu
- Department of Electrical and Computer Engineering, University of California, Los Angeles
| | - Kang Wang
- Department of Electrical and Computer Engineering, University of California, Los Angeles
| | | | | | - Mark D Stiles
- Alternative Computing Group, National Institute of Standards and Technology
| | | | - Axel Hoffmann
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign
| | | | - Kaushik Roy
- Department of Electrical and Computer Engineering, Purdue University
| | - Jian-Ping Wang
- Electrical and Computer Engineering Department, University of Minnesota
| | | | - Kevin Garello
- IMEC, Leuven, Belgium; CEA-Spintec, Grenoble, France
| | - Wei Zhang
- Physics Department, Oakland University
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6
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Feng Q. Electron correlation effect versus spin-orbit coupling for tungsten and impurities. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:445603. [PMID: 32674082 DOI: 10.1088/1361-648x/aba6a5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2020] [Accepted: 07/16/2020] [Indexed: 06/11/2023]
Abstract
The electron correlation and spin-orbit coupling (SOC) effects are investigated for body-centered-cubic tungsten and intrinsic & irradiative impurities using first principles calculations based upon the density functional theory. It is found that the electron correlation between the localized 5delectrons and the SOC effect are significant in modifying the band structures and the formation energies of defects. For the latter one, the involving of electron correlation always makes the defects stabler than the Perdew-Burke-Ernzerhof results, while the SOC contributes diversely for different defects. Moreover, the migration barrier of single tungsten vacancy moving in ⟨111⟩ direction is explored, where the inclusion of electron correlations remarkably decreases the migration barrier, while the influence of SOC is almost negligible. This study can help to validate the previous studies on irradiative defects in tungsten and improve the further investigations.
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Affiliation(s)
- Qingguo Feng
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
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7
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Xu Z, Hwee Wong GD, Tang J, Liu E, Gan W, Xu F, Lew WS. Giant Spin Hall Effect in Cu-Tb Alloy Thin Films. ACS APPLIED MATERIALS & INTERFACES 2020; 12:32898-32904. [PMID: 32608235 DOI: 10.1021/acsami.0c07441] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We report the giant spin current generation in CuTb alloys arising from the spin Hall effect. The maximum spin Hall angle from our CuTb-based magnetic heterostructures was found to be -0.35 ± 0.02 for Cu0.39Tb0.61. We find that the contribution of skew scattering is larger than the side jump for lower Tb concentrations (<14.9%), while the converse is true for higher Tb concentrations. Additionally, we also studied the Gilbert damping parameter, spin diffusion length, and spin-mixing conductance. Interfacial spin transparency was found to be 0.55 ± 0.03 for the CoFeB/Cu0.53Tb0.47 interface. The spin diffusion length and spin-mixing conductance of the Cu0.53Tb0.47 alloy are λsd = 2.5 ± 0.3 nm and G↓↑ = (24.2 ± 1.0) × 1015 cm-2, respectively. Our results pave a way for rare-earth metals to be used as a spin Hall material in highly efficient SOT devices.
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Affiliation(s)
- Zhan Xu
- School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Grayson Dao Hwee Wong
- School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Jiaxuan Tang
- MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Er Liu
- MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Weiliang Gan
- School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Feng Xu
- MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Wen Siang Lew
- School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
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8
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Xu H, Wei J, Zhou H, Feng J, Xu T, Du H, He C, Huang Y, Zhang J, Liu Y, Wu HC, Guo C, Wang X, Guang Y, Wei H, Peng Y, Jiang W, Yu G, Han X. High Spin Hall Conductivity in Large-Area Type-II Dirac Semimetal PtTe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2000513. [PMID: 32176423 DOI: 10.1002/adma.202000513] [Citation(s) in RCA: 42] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/21/2020] [Revised: 03/02/2020] [Accepted: 03/03/2020] [Indexed: 05/17/2023]
Abstract
Manipulation of magnetization by electric-current-induced spin-orbit torque (SOT) is of great importance for spintronic applications because of its merits in energy-efficient and high-speed operation. An ideal material for SOT applications should possess high charge-spin conversion efficiency and high electrical conductivity. Recently, transition metal dichalcogenides (TMDs) emerge as intriguing platforms for SOT study because of their controllability in spin-orbit coupling, conductivity, and energy band topology. Although TMDs show great potentials in SOT applications, the present study is restricted to the mechanically exfoliated samples with small sizes and relatively low conductivities. Here, a manufacturable recipe is developed to fabricate large-area thin films of PtTe2 , a type-II Dirac semimetal, to study their capability of generating SOT. Large SOT efficiency together with high conductivity results in a giant spin Hall conductivity of PtTe2 thin films, which is the largest value among the presently reported TMDs. It is further demonstrated that the SOT from PtTe2 layer can switch a perpendicularly magnetized CoTb layer efficiently. This work paves the way for employing PtTe2 -like TMDs for wafer-scale spintronic device applications.
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Affiliation(s)
- Hongjun Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Jinwu Wei
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Hengan Zhou
- State Key Laboratory of Low-Dimensional Quantum Physics, and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100084, China
| | - Jiafeng Feng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Teng Xu
- State Key Laboratory of Low-Dimensional Quantum Physics, and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100084, China
| | - Haifeng Du
- High Magnetic Field Laboratory, Chinese Academy of Sciences, 350 Shushanhu Road, Hefei, Anhui, 230031, China
| | - Congli He
- Institute of Advanced Materials, Beijing Normal University, Beijing, 100875, China
| | - Yuan Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Junwei Zhang
- Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, School of Physical Science and Technology and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou, 730000, China
| | - Yizhou Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Chenyang Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiao Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yao Guang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hongxiang Wei
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yong Peng
- Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, School of Physical Science and Technology and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou, 730000, China
| | - Wanjun Jiang
- State Key Laboratory of Low-Dimensional Quantum Physics, and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100084, China
| | - Guoqiang Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
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