Metal-insulator transition in a semiconductor nanocrystal network

How Depletion Layers Govern the Dynamic Plasmonic Response of In-Doped CdO Nanocrystals

Doped metal oxide nanocrystals exhibit a localized surface plasmon resonance that is widely tunable across the mid- to near-infrared region, making them useful for applications in optoelectronics, sensing, and photocatalysis. Surface states pin the Fermi level and induce a surface depletion layer that hinders conductivity and refractive index sensing but can be advantageous for optical modulation. Several strategies have been developed to both synthetically and postsynthetically tailor the depletion layer toward particular applications; however, this understanding has primarily been advanced in Sn-doped In2O3 (ITO) nanocrystals, leaving open questions about generalizing to other doped metal oxides. Here, we quantitatively analyze the depletion layer in In-doped CdO (ICO) nanocrystals, which is shown to have an intrinsically wide depletion layer that leads to broad plasmonic modulation via postsynthetic chemical reduction and ligand exchange. Leveraging these insights, we applied depletion layer tuning to enhance the inherently weak plasmonic coupling in ICO nanocrystal superlattices. Our results demonstrate how an electronic band structure dictates the radial distribution of electrons and governs the response to postsynthetic modulation, enabling the design of tunable and responsive plasmonic materials.

Remarkable Electrical Conductivity Increase and Pure Metallic Properties from Semiconducting Colloidal Nanocrystals by Cation Exchange for Solution-Processable Optoelectronic Applications

The authors report a strategic approach to achieve metallic properties from semiconducting CuFeS colloidal nanocrystal (NC) solids through cation exchange method. An unprecedentedly high electrical conductivity is realized by the efficient generation of charge carriers onto a semiconducting CuS NC template via minimal Fe exchange. An electrical conductivity exceeding 10 500 S cm^-1 (13 400 S cm^-1 at 2 K) and a sheet resistance of 17 Ω/sq at room temperature, which are among the highest values for solution-processable semiconducting NCs, are achieved successfully from bornite-phase CuFeS NC films possessing 10% Fe atom. The temperature dependence of the corresponding films exhibits pure metallic characteristics. Highly conducting NCs are demonstrated for a thermoelectric layer exhibiting a high power factor over 1.2 mW m^-1 K^-2 at room temperature, electrical wires for switching on light emitting diods (LEDs), and source-drain electrodes for p- and n-type organic field-effect transistors. Ambient stability, eco-friendly composition, and solution-processability further validate their sustainable and practical applicability. The present study provides a simple but very effective method for significantly increasing charge carrier concentrations in semiconducting colloidal NCs to achieve metallic properties, which is applicable to various optoelectronic devices.

Enabling metallic behaviour in two-dimensional superlattice of semiconductor colloidal quantum dots

Semiconducting colloidal quantum dots and their assemblies exhibit superior optical properties owing to the quantum confinement effect. Thus, they are attracting tremendous interest from fundamental research to commercial applications. However, the electrical conducting properties remain detrimental predominantly due to the orientational disorder of quantum dots in the assembly. Here we report high conductivity and the consequent metallic behaviour of semiconducting colloidal quantum dots of lead sulphide. Precise facet orientation control to forming highly-ordered quasi-2-dimensional epitaxially-connected quantum dot superlattices is vital for high conductivity. The intrinsically high mobility over 10 cm² V^-1 s^-1 and temperature-independent behaviour proved the high potential of semiconductor quantum dots for electrical conducting properties. Furthermore, the continuously tunable subband filling will enable quantum dot superlattices to be a future platform for emerging physical properties investigations, such as strongly correlated and topological states, as demonstrated in the moiré superlattices of twisted bilayer graphene.

High Seebeck Coefficient from Screen-Printed Colloidal PbSe Nanocrystals Thin Film

Thin-film thermoelectrics (TEs) with a thickness of a few microns present an attractive opportunity to power the internet of things (IoT). Here, we propose screen printing as an industry-relevant technology to fabricate TE thin films from colloidal PbSe quantum dots (QDs). Monodisperse 13 nm-sized PbSe QDs with spherical morphology were synthesized through a straightforward heating-up method. The cubic-phase PbSe QDs with homogeneous chemical composition allowed the formulation of a novel ink to fabricate 2 μm-thick thin films through robust screen printing followed by rapid annealing. A maximum Seebeck coefficient of 561 μV K^-1 was obtained at 143 °C and the highest electrical conductivity of 123 S m^-1 was reached at 197 °C. Power factor calculations resulted in a maximum value of 2.47 × 10^-5 W m^-1 K^-2 at 143 °C. To the best of our knowledge, the observed Seebeck coefficient value is the highest reported for TE thin films fabricated by screen printing. Thus, this study highlights that increased Seebeck coefficients can be obtained by using QD building blocks owing to quantum confinement.

Contact Conductance Governs Metallicity in Conducting Metal Oxide Nanocrystal Films

Although colloidal nanoparticles hold promise for fabricating electronic components, the properties of nanoparticle-derived materials can be unpredictable. Materials made from metallic nanocrystals exhibit a variety of transport behavior ranging from insulators, with internanocrystal contacts acting as electron transport bottlenecks, to conventional metals, where phonon scattering limits electron mobility. The insulator-metal transition (IMT) in nanocrystal films is thought to be determined by contact conductance. Meanwhile, criteria are lacking to predict the characteristic transport behavior of metallic nanocrystal films beyond this threshold. Using a library of transparent conducting tin-doped indium oxide nanocrystal films with varied electron concentration, size, and contact area, we assess the IMT as it depends on contact conductance and show how contact conductance is also key to predicting the temperature-dependence of conductivity in metallic films. The results establish a phase diagram for electron transport behavior that can guide the creation of metallic conducting materials from nanocrystal building blocks.

Distance-dependent resonance energy transfer in alkyl-terminated Si nanocrystal solids

Understanding and controlling the energy transfer between silicon nanocrystals is of significant importance for the design of efficient optoelectronic devices. However, previous studies on silicon nanocrystal energy transfer were limited because of the strict requirements to precisely control the inter-dot distance and to perform all measurements in air-free environments to preclude the effect of ambient oxygen. Here, we systematically investigate the distance-dependent resonance energy transfer in alkyl-terminated silicon nanocrystals for the first time. Silicon nanocrystal solids with inter-dot distances varying from 3 to 5 nm are fabricated by varying the length and surface coverage of alkyl ligands in solution-phase and gas-phase functionalized silicon nanocrystals. The inter-dot energy transfer rates are extracted from steady-state and time-resolved photoluminescence measurements, enabling a direct comparison to theoretical predictions. Our results reveal that the distance-dependent energy transfer rates in Si NCs decay faster than predicted by the Förster mechanism, suggesting higher-order multipole interactions.