Chip-based laser with 1-hertz integrated linewidth

Photonic chip-based low-noise microwave oscillator

Numerous modern technologies are reliant on the low-phase noise and exquisite timing stability of microwave signals. Substantial progress has been made in the field of microwave photonics, whereby low-noise microwave signals are generated by the down-conversion of ultrastable optical references using a frequency comb1-3. Such systems, however, are constructed with bulk or fibre optics and are difficult to further reduce in size and power consumption. In this work we address this challenge by leveraging advances in integrated photonics to demonstrate low-noise microwave generation via two-point optical frequency division4,5. Narrow-linewidth self-injection-locked integrated lasers6,7 are stabilized to a miniature Fabry-Pérot cavity8, and the frequency gap between the lasers is divided with an efficient dark soliton frequency comb9. The stabilized output of the microcomb is photodetected to produce a microwave signal at 20 GHz with phase noise of -96 dBc Hz-1 at 100 Hz offset frequency that decreases to -135 dBc Hz-1 at 10 kHz offset-values that are unprecedented for an integrated photonic system. All photonic components can be heterogeneously integrated on a single chip, providing a significant advance for the application of photonics to high-precision navigation, communication and timing systems.

Integrated optical frequency division for microwave and mmWave generation

The generation of ultra-low-noise microwave and mmWave in miniaturized, chip-based platforms can transform communication, radar and sensing systems1-3. Optical frequency division that leverages optical references and optical frequency combs has emerged as a powerful technique to generate microwaves with superior spectral purity than any other approaches4-7. Here we demonstrate a miniaturized optical frequency division system that can potentially transfer the approach to a complementary metal-oxide-semiconductor-compatible integrated photonic platform. Phase stability is provided by a large mode volume, planar-waveguide-based optical reference coil cavity8,9 and is divided down from optical to mmWave frequency by using soliton microcombs generated in a waveguide-coupled microresonator10-12. Besides achieving record-low phase noise for integrated photonic mmWave oscillators, these devices can be heterogeneously integrated with semiconductor lasers, amplifiers and photodiodes, holding the potential of large-volume, low-cost manufacturing for fundamental and mass-market applications13.

Modulation-free laser stabilization technique using integrated cavity-coupled Mach-Zehnder interferometer

Stable lasers play a significant role in precision optical systems where an electro-optic laser frequency stabilization system, such as the Pound-Drever-Hall technique, measures laser frequency and actively stabilizes it by comparing it to a frequency reference. Despite their excellent performance, there has been a trade-off between complexity, scalability, and noise measurement sensitivity. Here, we propose and experimentally demonstrate a modulation-free laser stabilization method using an integrated cavity-coupled Mach-Zehnder interferometer as a frequency noise discriminator. The proposed architecture maintains the sensitivity of the Pound-Drever-Hall architecture without the need for any modulation. This significantly simplifies the architecture and makes miniaturization into an integrated photonic platform easier. The implemented chip suppresses the frequency noise of a semiconductor laser by 4 orders-of-magnitude using an on-chip silicon microresonator with a quality factor of 2.5 × 106. The implemented passive photonic chip occupies an area of 0.456 mm2 and is integrated on AIM Photonics 100 nm silicon-on-insulator process.

Integrated microcavity electric field sensors using Pound-Drever-Hall detection

Discerning weak electric fields has important implications for cosmology, quantum technology, and identifying power system failures. Photonic integration of electric field sensors is highly desired for practical considerations and offers opportunities to improve performance by enhancing microwave and lightwave interactions. Here, we demonstrate a high-Q microcavity electric field sensor (MEFS) by leveraging the silicon chip-based thin film lithium niobate photonic integrated circuits. Using the Pound-Drever-Hall detection scheme, our MEFS achieves a detection sensitivity of 5.2 μV/(m[Formula: see text]), which surpasses previous lithium niobate electro-optical electric field sensors by nearly two orders of magnitude, and is comparable to atom-based quantum sensing approaches. Furthermore, our MEFS has a bandwidth that can be up to three orders of magnitude broader than quantum sensing approaches and measures fast electric field amplitude and phase variations in real-time. The ultra-sensitive MEFSs represent a significant step towards building electric field sensing networks and broaden the application spectrum of integrated microcavities.

Roadmapping the next generation of silicon photonics

Silicon photonics has developed into a mainstream technology driven by advances in optical communications. The current generation has led to a proliferation of integrated photonic devices from thousands to millions-mainly in the form of communication transceivers for data centers. Products in many exciting applications, such as sensing and computing, are around the corner. What will it take to increase the proliferation of silicon photonics from millions to billions of units shipped? What will the next generation of silicon photonics look like? What are the common threads in the integration and fabrication bottlenecks that silicon photonic applications face, and which emerging technologies can solve them? This perspective article is an attempt to answer such questions. We chart the generational trends in silicon photonics technology, drawing parallels from the generational definitions of CMOS technology. We identify the crucial challenges that must be solved to make giant strides in CMOS-foundry-compatible devices, circuits, integration, and packaging. We identify challenges critical to the next generation of systems and applications-in communication, signal processing, and sensing. By identifying and summarizing such challenges and opportunities, we aim to stimulate further research on devices, circuits, and systems for the silicon photonics ecosystem.

3D integration enables ultralow-noise isolator-free lasers in silicon photonics

Photonic integrated circuits are widely used in applications such as telecommunications and data-centre interconnects1-5. However, in optical systems such as microwave synthesizers6, optical gyroscopes7 and atomic clocks8, photonic integrated circuits are still considered inferior solutions despite their advantages in size, weight, power consumption and cost. Such high-precision and highly coherent applications favour ultralow-noise laser sources to be integrated with other photonic components in a compact and robustly aligned format-that is, on a single chip-for photonic integrated circuits to replace bulk optics and fibres. There are two major issues preventing the realization of such envisioned photonic integrated circuits: the high phase noise of semiconductor lasers and the difficulty of integrating optical isolators directly on-chip. Here we challenge this convention by leveraging three-dimensional integration that results in ultralow-noise lasers with isolator-free operation for silicon photonics. Through multiple monolithic and heterogeneous processing sequences, direct on-chip integration of III-V gain medium and ultralow-loss silicon nitride waveguides with optical loss around 0.5 decibels per metre are demonstrated. Consequently, the demonstrated photonic integrated circuit enters a regime that gives rise to ultralow-noise lasers and microwave synthesizers without the need for optical isolators, owing to the ultrahigh-quality-factor cavity. Such photonic integrated circuits also offer superior scalability for complex functionalities and volume production, as well as improved stability and reliability over time. The three-dimensional integration on ultralow-loss photonic integrated circuits thus marks a critical step towards complex systems and networks on silicon.

Linewidth narrowing in self-injection-locked on-chip lasers

Stable laser emission with narrow linewidth is of critical importance in many applications, including coherent communications, LIDAR, and remote sensing. In this work, the physics underlying spectral narrowing of self-injection-locked on-chip lasers to Hz-level lasing linewidth is investigated using a composite-cavity structure. Heterogeneously integrated III-V/SiN lasers operating with quantum-dot and quantum-well active regions are analyzed with a focus on the effects of carrier quantum confinement. The intrinsic differences are associated with gain saturation and carrier-induced refractive index, which are directly connected with 0- and 2-dimensional carrier densities of states. Results from parametric studies are presented for tradeoffs involved with tailoring the linewidth, output power, and injection current for different device configurations. Though both quantum-well and quantum-dot devices show similar linewidth-narrowing capabilities, the former emits at a higher optical power in the self-injection-locked state, while the latter is more energy-efficient. Lastly, a multi-objective optimization analysis is provided to optimize the operation and design parameters. For the quantum-well laser, minimizing the number of quantum-well layers is found to decrease the threshold current without significantly reducing the output power. For the quantum-dot laser, increasing the quantum-dot layers or density in each layer increases the output power without significantly increasing the threshold current. These findings serve to guide more detailed parametric studies to produce timely results for engineering design.

Red narrow-linewidth lasing and frequency comb from gain-switched self-injection-locked Fabry-Pérot laser diode

Narrow-linewidth lasers are in extensive demand for numerous cutting-edge applications. Such lasers operating at the visible range are of particular interest. Self-injection locking of a laser diode frequency to a high-Q whispering gallery mode is an effective and universal way to achieve superior laser performance. We demonstrate ultranarrow lasing with less than 10 Hz instantaneous linewidth for 20 [Formula: see text]s averaging time at 638 nm using a Fabry-Pérot laser diode locked to a crystalline MgF[Formula: see text] microresonator. The linewidth measured with a [Formula: see text]-separation line technique that characterizes 10 ms stability is as low as 1.4 kHz. Output power exceeds 80 mW. Demonstrated results are among the best for visible-range lasers in terms of linewidth combined with solid output power. We additionally report the first demonstration of a gain-switched regime for such stabilized Fabry-Pérot laser diode showing a high-contrast visible frequency comb generation. Tunable linespacing from 10 MHz to 3.8 GHz is observed. We demonstrated that the beatnote between the lines has sub-Hz linewidth and experiences spectral purification in the self-injection locking regime. This result might be of special importance for spectroscopy in the visible range.

Optimization of laser stabilization via self-injection locking to a whispering-gallery-mode microresonator: experimental study

Self-injection locking of a diode laser to a high-quality-factor microresonator is widely used for frequency stabilization and linewidth narrowing. We constructed several microresonator-based laser sources with measured instantaneous linewidths of 1 Hz and used them for investigation and implementation of the self-injection locking effect. We studied analytically and experimentally the dependence of the stabilization coefficient on tunable parameters such as locking phase and coupling rate. It was shown that precise control of the locking phase allows fine-tuning of the generated frequency from the stabilized laser diode. We also showed that it is possible for such laser sources to realize fast continuous and linear frequency modulation by injection current tuning inside the self-injection locking regime. We conceptually demonstrate coherent frequency-modulated continuous wave LIDAR over a distance of 10 km using such a microresonator-stabilized laser diode in the frequency-chirping regime and measure velocities as low as sub-micrometer per second in the unmodulated case. These results could be of interest to cutting-edge technology applications such as space debris monitoring and long-range object classification, high-resolution spectroscopy, and others.