RETRACTED: Observation of chiral currents at the magnetic domain boundary of a topological insulator

Imaging current distribution in a topological insulator Bi2Se3 in the presence of competing surface and bulk contributions to conductivity

Two-dimensional (2D) topological surface states in a three-dimensional topological insulator (TI) should produce uniform 2D surface current distribution. However, our transport current imaging studies on Bi₂Se₃ thin film reveal non-uniform current sheet flow at 15 K with strong edge current flow. This is consistent with other imaging studies on thin films of Bi₂Se₃. In contrast to strong edge current flow in thin films, in single crystal of Bi₂Se₃ at 15 K our current imaging studies show the presence of 3.6 nm thick uniform 2D sheet current flow. Above 70 K, this uniform 2D sheet current sheet begins to disintegrate into a spatially non-uniform flow. The flow becomes patchy with regions having high and low current density. The area fraction of the patches with high current density rapidly decreases at temperatures above 70 K, with a temperature dependence of the form \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$1/\left| {T - 70} \right|^{0.35}$$\end{document}1/T-700.35. The temperature scale of 70 K coincides with the onset of bulk conductivity in the crystal due to electron doping by selenium vacancy clusters in Bi₂Se₃. Thus our results show a temperature dependent competition between surface and bulk conductivity produces a temperature dependent variation in uniformity of current flow in the topological insulator.

Topological Insulator GMR Straintronics for Low-Power Strain Sensors

A quantum spin Hall insulator, i.e., topological insulator (TI), is a natural candidate for low-power electronics and spintronics because of its intrinsic dissipationless feature. Recent density functional theory and scanning tunneling spectroscopy experiments show that the mechanical strain allows dynamic, continuous, and reversible modulations of the topological surface states within the topological phase and hence opens prospects for TI straintronics. Here, we combine the mechanical strain and the giant magnetoresistance (GMR) of a ferromagnet-TI (FM-TI) junction to construct a novel TI GMR straintronics device. Such a FM-strained-FM-TI junction permits several energy spectral ranges for 100% GMR and a robust strain-controllable magnetic switch. Beyond the 100% GMR energy range, we observe a strain-modulated oscillating GMR, which is an alternative hallmark of the Fabry-Pérot quantum interference of Dirac surface states. These strain-sensitive GMR responses indicate that FM-strained-FM-TI junctions are very favorable for practical applications for low-power nanoscale strain sensors.

Local optical control of ferromagnetism and chemical potential in a topological insulator

Many proposed experiments involving topological insulators (TIs) require spatial control over time-reversal symmetry and chemical potential. We demonstrate reconfigurable micron-scale optical control of both magnetization (which breaks time-reversal symmetry) and chemical potential in ferromagnetic thin films of Cr-(Bi,Sb)2Te3 grown on SrTiO3 By optically modulating the coercivity of the films, we write and erase arbitrary patterns in their remanent magnetization, which we then image with Kerr microscopy. Additionally, by optically manipulating a space charge layer in the underlying SrTiO3 substrates, we control the local chemical potential of the films. This optical gating effect allows us to write and erase p-n junctions in the films, which we study with photocurrent microscopy. Both effects are persistent and may be patterned and imaged independently on a few-micron scale. Dynamic optical control over both magnetization and chemical potential of a TI may be useful in efforts to understand and control the edge states predicted at magnetic domain walls in quantum anomalous Hall insulators.

Electrically Tunable Multiterminal SQUID-on-Tip

We present a new nanoscale superconducting quantum interference device (SQUID) whose interference pattern can be shifted electrically in situ. The device consists of a nanoscale four-terminal-four-junction SQUID fabricated at the apex of a sharp pipet using a self-aligned three-step deposition of Pb. In contrast to conventional two-terminal-two-junction SQUIDs that display optimal sensitivity when flux biased to about a quarter of the flux quantum, the additional terminals and junctions allow optimal sensitivity at arbitrary applied flux, thus eliminating the magnetic field "blind spots". We demonstrate spin sensitivity of 5 to 8 μ_B/Hz^1/2 over a continuous field range of 0 to 0.5 T with promising applications for nanoscale scanning magnetic imaging.

Torsional Chiral Magnetic Effect in a Weyl Semimetal with a Topological Defect

We propose a torsional response raised by a lattice dislocation in Weyl semimetals akin to a chiral magnetic effect; i.e., a fictitious magnetic field arising from a screw or edge dislocation induces a charge current. We demonstrate that, in sharp contrast to the usual chiral magnetic effect that vanishes in real solid state materials, the torsional chiral magnetic effect exists even for realistic lattice models, which implies the experimental detection of the effect via superconducting quantum interference device or nonlocal resistivity measurements in Weyl semimetal materials.