Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material

Group VA Elemental Nanosheets as Efficient Carriers for Nitrosourea in Targeted Cancer Therapy

Cancer is a leading cause of death worldwide, and nanotechnology-based drug delivery systems offer a promising way to improve treatment by better targeting tumors and delivering multiple drugs more effectively. Herein, using first-principles calculations, we investigate the potential of monolayer group VA (P, As, Sb, Bi) elemental two-dimensional (2D) materials as a promising platform for the efficient and targeted delivery of the anticancer drug Nitrosourea (NU). It is first shown that group VA elemental 2D materials can be stabilized in different arrangements of group VA atoms, such as the puckered and buckled honeycomb structure. Next, we comprehensively investigated the structural properties of the studied nanosheets upon adsorption of the NU molecule in both vertical and horizontal configurations. We demonstrate that the horizontal configurations are more stable with negative adsorption energies, signifying their thermodynamic stability. Furthermore, upon the adsorption of NU on both sides of the group VA monolayers, the adsorption energy can be further enhanced. In addition, our electronic structure calculations reveal that upon adsorption of the drug molecule, the energy gaps decrease, and the density of states at the Fermi level increases slightly compared to an isolated group VA surface; these emerged states are attributed to the drug. Moreover, the adsorbed drugs can be readily released by light within the visible or near-infrared wavelength range, opening possibilities for their application in photothermal therapy. These findings highlight the potential of group VA monolayers as an effective platform for targeted drug delivery by harnessing their unique properties.

New phases of 2D group-VA nanostructures with unusual auxetic mechanical properties induced by the regularity of the interatomic interaction force

Designing new auxetic materials is important for flexible electronics. The micromechanism of auxeticity in two-dimensional (2D) materials has attracted significant attention but the main factors of auxeticity are case-dependent and their connection with the geometrical/electronic features of 2D materials still requires systematic exploration. In this work, two new phases of 2D group-VA materials, namely, X10-2_2 and X12-14 (X = P, As, Sb, and Bi), were predicted. All these structures were proven to be stable from the aspects of their thermodynamic and kinetic stabilities. Investigations of their electronic properties revealed that these structures were all semiconductors with high anisotropic mobility. Mechanical analyses showed that all the X12-14 phases exhibited auxeticity, whereas the Poisson's ratios of the X10-2_2 series presented a strong dependence on the group-VA elements. The P10-2_2 structure exhibited auxeticity under both tensile and compression strain. However, As10-2_2 exhibited a peculiar half-auxeticity and Sb10-2_2 and Bi10-2_2 were non-auxetic. Evaluations of the interatomic interaction forces revealed that it is the unique folded structures and the changes of the atomic interactions that induce the different mechanical properties of the X10-2_2 structures. This work uncovers the special relationship between the auxeticity of 2D group-VA materials and the inherent natures of the group-VA elements from the viewpoint of the interatomic interaction force, which will assist future research on auxetic materials.

Bismuthene Under Cover: Graphene Intercalation of a Large Gap Quantum Spin Hall Insulator

The quantum spin Hall insulator bismuthene, a two-third monolayer of bismuth on SiC(0001), is distinguished by helical metallic edge states that are protected by a groundbreaking 800 meV topological gap, making it ideal for room temperature applications. This massive gap inversion arises from a unique synergy between flat honeycomb structure, strong spin orbit coupling, and an orbital filtering effect that is mediated by the substrate. However, the rapid oxidation of bismuthene in air has severely hindered the development of applications, so far confining experiments to ultra-high vacuum conditions. Intercalating bismuthene between SiC and a protective sheet of graphene, this barrier is successfully overcome. As demonstrated by scanning tunneling microscopy and photoemission spectroscopy, graphene intercalation preserves the structural and topological integrity of bismuthene, while effectively shielding it from oxidation in air. Hereby, hydrogen is identified as the critical process gas that was missing in previous bismuth intercalation attempts. These findings facilitate ex-situ experiments and pave the way for the development of bismuthene based devices, signaling a significant step forward in the development of next-generation technologies.

Exploring a new topological insulator in β-BiAs oxide

The scarcity of suitable quantum spin Hall (QSH) insulators with a significant bulk gap poses a major challenge to the widespread application of the QSH effect. This study employs first-principles calculations to investigate the stability, electronic structure, and topological properties of a fully oxygenated bismuth arsenide system. Without the influence of spin-orbit coupling (SOC), the valence and conduction bands at the Γ-point exhibit a semimetallic nature. However, introducing SOC leads to a substantial 352 meV band gap, which allows operation at room temperature. The calculation of the topological invariant reveals , and the presence of topologically protected edge states in a Dirac cone at the Γ point confirms the existence of a non-trivial topological state. The epitaxial growth of β-BiAsO2 on a SiO2 substrate maintains the band topology of β-BiAsO2, spin lock with SOC effect. Additionally, the fully oxidized surfaces of β-BiAsO2 are inherently resistant to surface oxidation and degradation, suggesting a promising approach for developing room-temperature topological quantum devices. These findings not only introduce new vitality into the 2D group-VA materials family and enrich the available candidate materials in this field but also highlight the potential of these 2D semiconductors as appealing ultrathin materials for future flexible electronics and optoelectronics devices.

Dissipationless edge transport in single-layer topological insulator Bi4Br4based device under high vacancy concentration

Single-layer Bismuth Monobromide (SL-Bi4Br4) is a recently experimentally confirmed room temperature quantum spin hall insulator with a relatively large bulk band gap. In this paper, we investigate the electronic properties of SL-Bi4Br4and single-layer bismuth monobromide nanoribbon (SL-Bi4Br4NR) introducing different vacancy defects near the nanoribbon edges. With maximally localized wannier function (MLWF) constructed Hamiltonian we show that SL-Bi4Br4NR edge states are protected by bulk topology and robust against disorder. In conjunction with MLWF and non-equilibrium Green's function, we also show that in devices made from SL-Bi4Br4, transmission through the topologically protected edge states do not suffer from degradation when the device is sufficiently wide. Increasing channel length and defect concentration affect only the bulk states transmission leaving edge states transmission perfectly quantized. This resilience against disorder signifies SL-Bi4Br4's promising candidacy for next-generation electronic & spintronics devices application.

Atomistic Insights into Elemental Two-Dimensional Materials and Their Heterostructures

Inspired by the success of graphene, two-dimensional (2D) materials have been at the forefront of advanced (opto-)nanoelectronics and energy-related fields owing to their exotic properties like sizable bandgaps, Dirac fermions, quantum spin Hall states, topological edge states, and ballistic charge carrier transport, which hold promise for various electronic device applications. Emerging main group elemental 2D materials, beyond graphene, are of particular interest due to their unique structural characteristics, ease of synthetic exploration, and superior property tunability. In this review, we present recent advances in atomic-scale studies of elemental 2D materials with an emphasis on synthetic strategies and structural properties. We also discuss the challenges and perspectives regarding the integration of elemental 2D materials into various heterostructures.

Realization of 2D metals at the ångström thickness limit

Two-dimensional (2D) metals are appealing for many emergent phenomena and have recently attracted research interests1-9. Unlike the widely studied 2D van der Waals (vdW) layered materials, 2D metals are extremely challenging to achieve, because they are thermodynamically unstable1,10. Here we develop a vdW squeezing method to realize diverse 2D metals (including Bi, Ga, In, Sn and Pb) at the ångström thickness limit. The achieved 2D metals are stabilized from a complete encapsulation between two MoS2 monolayers and present non-bonded interfaces, enabling access to their intrinsic properties. Transport and Raman measurements on monolayer Bi show excellent physical properties, for example, new phonon mode, enhanced electrical conductivity, notable field effect and large nonlinear Hall conductivity. Our work establishes an effective route for implementing 2D metals, alloys and other 2D non-vdW materials, potentially outlining a bright vision for a broad portfolio of emerging quantum, electronic and photonic devices.

Realization of a one-dimensional topological insulator in ultrathin germanene nanoribbons

Realizing a one-dimensional (1D) topological insulator and identifying the lower-dimensional limit of two-dimensional (2D) behavior are crucial steps toward developing high-density quantum state networks, advancing topological quantum computing, and exploring dimensionality effects in topological materials. Although 2D topological insulators have been experimentally realized, their lower dimensional limit and 1D counterparts remain elusive. Here, we fabricated and characterized arrays of zigzag-terminated germanene nanoribbons, a 2D topological insulator with a large topological bulk gap. The electronic properties of these nanoribbons strongly depend on their width, with topological edge states persisting down to a critical width (∼2 nm), defining the limit of 2D topology. Below this threshold, contrary to the tenfold way classification, we observe zero-dimensional (0D) states localized at the ends of the ultrathin nanoribbons. These end states, topologically protected by time-reversal and mirror symmetries, indicate the realization of a 1D topological insulator with strong spin-orbit coupling. Our findings establish germanene nanoribbons as a platform for investigating 1D topology and dimensionality effects in topological materials.

Two-Dimensional BiSb Alloy Nanosheets for the Electrochemical Conversion of Nitrogen-to-Ammonia in Neutral Electrolytes

To achieve efficient and sustainable NH3 production by electrochemical nitrogen reduction at room temperature, the catalyst must have high activity and superior stability. Here, we prepared a series of two-dimensional BixSby alloy nanosheet materials with different atomic ratios by the improved coreduction method. Experiments and density functional theory (DFT) calculations reveal the following. (i) The uniformly distributed two-dimensional BixSby alloy nanosheet catalysts not only have a larger specific surface area, thereby promoting the full exposure of Bi active sites, but also are conducive to enhance the electrochemical stability of catalysts. (ii) In 2D-BixSby alloys, the effective charge coupling between Bi-Sb sites bridges the electron transfer channel from Bi to Sb, thereby improving the charge structure of Bi active sites, which enhances the adsorption of N2 by Bi sites and the Bi 6p-N2 π* interaction. Subsequently, the occupied Bi 6p orbital electrons are transferred to the π* antibonding orbital of N2, which greatly weakens the N≡N bond strength, thereby reducing the nitrogen reduction reaction (NRR) rate-limiting barrier (*N≡N → *N≡N-H: 0.26 eV). (iii) BiSb alloying further increases the hydrogen adsorption free energy (0.28 eV), preventing more hydrogen from occupying active sites, thereby inhibiting hydrogen evolution reaction (HER). Therefore, the NH3 yield (RNH3) and faradaic efficiency (FE) of 2D-BixSby series catalysts are higher than those of Bi Ns and Sb Ns. After optimization, the 2D-Bi0.5Sb0.5 catalyst exhibits the best NRR performance (RNH3: 5.13 × 10-10 mol s-1 cm-2, FE: 28.15%) and has superior electrochemical stability. After stability tests, the RNH3 and FE retention rates are as high as 98.28 and 98.07%, respectively. This study provides valuable insights into the design of novel ternary alloy NRR catalysts.

Synthesis of Xenes: physical and chemical methods

Since the debut of silicene in the experimental stage more than a decade ago, the family of two-dimensional elementary layers beyond graphene, called Xenes or transgraphenes, has rapidly expanded to include elements from groups II to VI of the periodic table. This expansion has opened pathways for the engineering of elementary monolayers that are inherently different from their bulk counterparts in terms of fundamental physical properties. Common guidelines for synthesizing Xenes can be categorized into well-defined methodological approaches. On the one hand, bottom-up methods, such as physical epitaxial methods, enable the growth of monolayers, multilayers, and heterostructured Xenes. On the other hand, top-down chemical methods, including topotactic deintercalation and liquid-phase exfoliation, are gaining prominence due to the possibility of massive production. This review provides an extensive view of the currently available synthesis routes for Xenes, highlighting the full range of Xenes reported to date, along with the most relevant identification techniques.

Role of spin-orbit coupling for the band splitting inα-Sb andα-Bi on SiC(0001)

Monolayer atomic thin films of group-V elements have a high potential for application in spintronics and valleytronics because of their unique crystal structure and strong spin-orbit coupling. We fabricated Sb and Bi monolayers on a SiC(0001) substrate by the molecular-beam-epitaxy method and studied the electronic structure by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. The fabricated Sb film shows the (√3 × √3)R30° superstructure associated with the formation ofα-Sb, and exhibits a semiconducting nature with a band gap of more than 1.8 eV. Spin-resolved ARPES measurements of isostructuralα-Bi revealed the in-plane spin polarization for the topmost valence band, demonstrating its Rashba-splitting nature due to the space-inversion-symmetry breaking. We discuss the origin of observed characteristic band structure and its similarity and difference between Sb and Bi.

Bond Confinement-Dependent Peierls Distortion in Epitaxially Grown Bismuth Films

A systematic study of the impact of film thickness on the properties of thin Bi films is presented. To this end, epitaxial films of high quality have been grown on a Si (111) substrate with thicknesses ranging from 1.9 to 29.9 nm. Broadband optical spectroscopy reveals a notable decline in the optical dielectric constant and the absorption peak height as the film thickness decreases, alongside a shift of the absorption maximum to higher photon energies. Raman and pump-probe spectroscopy show that the phonon mode frequencies increase upon decreasing film thickness, with the in-plane mode frequency rising by 10% from the thickest to the thinnest sample. The X-ray diffraction analysis reveals an increasing Peierls distortion for thinner films, explaining the observed property changes. Quantum chemical bonding analysis and density functional theory calculations show that the properties of thin bismuth are influenced by the interplay between electron localization and delocalization, characteristic of metavalently bonded solids. This study shows that for solids that utilize metavalent bonding, a thickness reduction leads to significant property changes. The effect can even be employed to tailor material properties without the need to change material stoichiometry.

A First-Principles Calculation Study of the Catalytic Properties of Two-Dimensional Bismuthene Materials for Carbon Dioxide Reduction

The electrochemical reduction of carbon dioxide (CO2) at room temperature into industrial chemicals and energy products offers a promising strategy to mitigate atmospheric greenhouse gas emissions. In this study, bismuthene was employed as a catalyst for CO2 reduction reaction (CO2RR). Through first-principles calculations, we evaluated the CO2RR catalytic activities of bismuth (Bi) on the (001) and (012) surfaces, analyzing the mechanisms underlying these activities. Surface energy calculations for monolayer and multilayer bismuthene confirmed that monolayer bismuthene is stable and suitable for catalytic applications. Adsorption free energies of intermediates showed that formic acid is the primary product. Furthermore, it is found that the Bi(012) surface has a lower free energy barrier than Bi(001) in the CO2RR process, representing the higher catalytic activity. These results provide theoretical insights for designing bismuthene-based CO2RR catalysts with reduced overpotential, improved efficiency and enhanced selectivity, particularly enhancing catalyst selectivity.

Capacitance enhancement by ion-laminated borophene-like layered materials

Atomically flat two-dimensional networks of boron are attracting attention as post-graphene materials. An introduction of cations between the boron atomic layers can exhibit unique electronic functions that are not achieved by neutral graphene or its derivatives. In the present study, we propose a synthesis strategy for ion-laminated boron layered materials in a solution phase, which enables the preparation of analogs by changing the alkali-metal species. The introduction of large cations extends the thermal range of the liquid-crystal phases because of weakened ionic interactions between borophene-like layers. An investigation of the capacitance of ion-laminated structures revealed a 105-fold or better increase in capacitance when the borophene-like materials were introduced between electrodes. That is difficult for general materials since the dielectric constant of common materials is below several thousand.

Cornertronics in Two-Dimensional Second-Order Topological Insulators

Traditional electronic devices rely on the electron's intrinsic degrees of freedom (d.o.f.) to process information. However, additional d.o.f., like the valley, can emerge in the low-energy states of certain systems. Here, we show that the quantum dots constructed from two-dimensional second-order topological insulators posses a new kind of d.o.f., namely corner freedom, related to the topological corner states that reside at different corners of the systems. Since the corner states are well separated in real space, they can be individually and intuitively manipulated, giving rise to the concept of cornertronics. Via symmetry analysis and material search, we identify the TiSiCO-family monolayers as the first prototype of cornertronics materials, where the corner states can be controlled by both electric and optical fields due to novel corner-layer coupling effect and corner-contrasted linear dichroism. Furthermore, we find that the band gap of the TiSiCO nanodisk lies in the terahertz region and is robust to size reduction. These results indicate that the TiSiCO nanodisks can be used to design terahertz devices with ultrasmall size and electric-field tunable band gap. Besides, the TiSiCO nanodisks are simultaneously sensitive to both the strength and polarization of the terahertz waves. Our findings not only pave the way for cornertronics, but also open a new direction for research in two-dimensional second-order topological insulators, quantum dots, and terahertz electronics.

Tunability of topological edge states in germanene at room temperature

Germanene is a two-dimensional topological insulator with a large topological band gap. For its use in low-energy electronics, such as topological field effect transistors and interconnects, it is essential that its topological edge states remain intact at room temperature. In this study, we examine these properties in germanene using scanning tunneling microscopy and spectroscopy at 300 K and compare the results with data obtained at 77 K. Our findings show that the edge states persist at room temperature, although thermal effects cause smearing of the bulk band gap. Additionally, we demonstrate that, even at room temperature, applying an external perpendicular electric field switches the topological states of germanene off. These findings indicate that germanene's topological properties can be maintained and controlled at room temperature, making it a promising material for low-energy electronic applications.

Epitaxial Growth of 2D Binary Phosphides

Combinations of phosphorus with main group III, IV, and V elements are theoretically predicted to generate 2D binary phosphides with extraordinary properties and promising applications. However, experimental synthesis is significantly lacking. Here, a general approach for preparing 2D binary phosphides is reported using single crystalline surfaces containing the constituent element of target 2D materials as the substrate. To validate this, SnP3 and BiP, representing typical 2D binary phosphides, are successfully synthesized on Cu2Sn and bismuthene, respectively. Scanning tunneling microscopy imaging reveals a hexagonal pattern of SnP3 on Cu2Sn, while α-BiP can be epitaxially grown on the α-bismuthene domain on Cu2Sb. First-principles calculations reveal that the formation of SnP3 on Cu2Sn is associated with strong interface bonding and significant charge transfer, while α-BiP interacts weakly with α-bismuthene so that its semiconducting property is preserved. The study demonstrates an attractive avenue for the atomic-scale growth of binary 2D materials via substrate phase engineering.

Two-dimensional bilayer blue phosphorus Dirac-like material: a multi-orbital tight-binding investigation

This study presents a theoretical examination of the electronic band structure of AA (AB) stacked bilayer blue phosphorus system within the fifth intralayer (5NN) and second interlayer nearest-neighbor (2NN) multi-orbital tight-binding (MOTB) approach. The variation of energy levels has been investigated through the symmetrical tensile strain of the low-buckled honeycomb lattice. Here, the primary objective is to examine the existence of Dirac electronic features in hexagonal stacked bilayer geometry. Our theoretical calculations predict that the AA bilayer is a new hexagonal two-dimensional material with px,y-orbital Dirac-like states at the high-symmetry K point. Consequently, these systems can host massless (massive) Dirac fermions. In particular, the AA bilayer exhibits zero-gap Dirac-like properties and manifests distinguishable Dirac-like cones in the presence of weak spin-orbit coupling when a modest stretch of 2.30% is achieved with a remarkably high Fermi velocity of approximately vf ≈ 0.12 × 105 m s-1. The behavior of the dispersion bands aligns reasonably well with recent experimental observations. Moreover, a stretch of 7.17% breaks some of the sublattice equivalence and enhances the spin-orbit interaction, resulting in the emergence of an electronic band gap of approximately ≈ 0.27 eV in the proximity of the high-symmetry K point. Furthermore, the tiny gap induced by the spin-orbit interaction implies topological nontriviality in the electronic state (quantum anomalous Hall state) of the honeycomb lattice. These findings categorize the AA bilayer as a rare two-dimensional Dirac-like material. This work provides, to the extent of our knowledge, a pioneering investigation into the existence of Dirac electronic properties in bilayer blue phosphorus. In addition, we present the first derivation of the MOTB model. However, the identified electronic characteristics designate this two-dimensional system as an ideal candidate for high-performance nanoelectronic devices.

Altermagnetic Routes to Majorana Modes in Zero Net Magnetization

We propose heterostructures that realize first and second order topological superconductivity with vanishing net magnetization by utilizing altermagnetism. Such platforms may offer a significant improvement over conventional platforms with uniform magnetization since the latter suppresses the superconducting gap. We first introduce a 1D semiconductor-superconductor structure in proximity to an altermagnet that realizes end Majorana zero modes (MZMs) with vanishing net magnetization. Additionally, a coexisting Zeeman term provides a tuning knob to distinguish topological and trivial zero modes. We then propose 2D altermagnetic platforms that can realize chiral Majorana fermions or higher order corner MZMs. Our Letter paves the way toward realizing Majorana boundary states with an alternative source of time-reversal breaking and zero net magnetization.

Large-Area Intercalated Two-Dimensional Pb/Graphene Heterostructure as a Platform for Generating Spin-Orbit Torque

A scalable platform to synthesize ultrathin heavy metals may enable high-efficiency charge-to-spin conversion for next-generation spintronics. Here, we report the synthesis of air-stable, epitaxially registered monolayer Pb underneath graphene on SiC (0001) by confinement heteroepitaxy (CHet). Diffraction, spectroscopy, and microscopy reveal that CHet-based Pb intercalation predominantly exhibits a mottled hexagonal superstructure due to an ordered network of Frenkel-Kontorova-like domain walls. The system's air stability enables ex situ spin torque ferromagnetic resonance (ST-FMR) measurements that demonstrate charge-to-spin conversion in graphene/Pb/ferromagnet heterostructures with a 1.5× increase in the effective field ratio compared to control samples.

Recent progress of MnBi2Te4 epitaxial thin films as a platform for realising the quantum anomalous Hall effect

Since the first realisation of the quantum anomalous Hall effect (QAHE) in a dilute magnetic-doped topological insulator thin film in 2013, the quantisation temperature has been limited to less than 1 K due to magnetic disorder in dilute magnetic systems. With magnetic moments ordered into the crystal lattice, the intrinsic magnetic topological insulator MnBi2Te4 has the potential to eliminate or significantly reduce magnetic disorder and improve the quantisation temperature. Surprisingly, to date, the QAHE has yet to be observed in molecular beam epitaxy (MBE)-grown MnBi2Te4 thin films at zero magnetic field, and what leads to the difficulty in quantisation is still an active research area. Although bulk MnBi2Te4 and exfoliated flakes have been well studied, revealing both the QAHE and axion insulator phases, experimental progress on MBE thin films has been slower. Understanding how the breakdown of the QAHE occurs in MnBi2Te4 thin films and finding solutions that will enable mass-produced millimetre-size QAHE devices operating at elevated temperatures are required. In this mini-review, we will summarise recent studies on the electronic and magnetic properties of MBE MnBi2Te4 thin films and discuss mechanisms that could explain the failure of the QAHE from the aspects of defects, electronic structure, magnetic order, and consequences of their delicate interplay. Finally, we propose several strategies for realising the QAHE at elevated temperatures in MnBi2Te4 thin films.

Piezoelectric, Thermoelectric, and Photocatalytic Water Splitting Properties of Janus Arsenic Chalcohalide Monolayers

In this study, we systematically investigate the piezoelectric, thermoelectric, and photocatalytic properties of novel two-dimensional Janus arsenic chalcohalide monolayers, AsXX' (X = S and Se and X' = Cl, Br, and I) using density functional theory. The positive phonon spectra and ab initio molecular dynamics simulation plots indicate these monolayers to be dynamically and thermally stable. The mechanical stability of these monolayers is confirmed by a nonzero elastic constant (C ij ), Young's modulus (Y 2D), and Poisson ratio (ν). These monolayers exhibit strong out-of-plane piezoelectric coefficients, making them candidate materials for piezoelectric devices. Our calculated results indicate that these monolayers have a low lattice thermal conductivity (κl) and high thermoelectric figure of merit (zT) up to 1.51 at 800 K. These monolayers have an indirect bandgap, high carrier mobility, and strong visible light absorption spectra. Furthermore, the AsSCl, AsSBr, and AsSeI monolayers exhibit appropriate band alignment for water splitting. The calculated value of the corrected solar-to-hydrogen conversion efficiency can reach up to 19%. The nonadiabatic molecular dynamics simulations reveal the prolonged electron-hole recombination rates of 1.52 0.98, and 0.67 ns for AsSCl, AsSBr, and AsSeI monolayers, respectively. Our findings demonstrate these monolayers to be potential candidates in energy-harvesting fields.

Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates

The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.

The Rise of Xene Hybrids

Xenes, mono-elemental atomic sheets, exhibit Dirac/Dirac-like quantum behavior. When interfaced with other 2D materials such as boron nitride, transition metal dichalcogenides, and metal carbides/nitrides/carbonitrides, it enables them with unique physicochemical properties, including structural stability, desirable bandgap, efficient charge carrier injection, flexibility/breaking stress, thermal conductivity, chemical reactivity, catalytic efficiency, molecular adsorption, and wettability. For example, BN acts as an anti-oxidative shield, MoS2 injects electrons upon laser excitation, and MXene provides mechanical flexibility. Beyond precise compositional modulations, stacking sequences, and inter-layer coupling controlled by parameters, achieving scalability and reproducibility in hybridization is crucial for implementing these quantum materials in consumer applications. However, realizing the full potential of these hybrid materials faces challenges such as air gaps, uneven interfaces, and the formation of defects and functional groups. Advanced synthesis techniques, a deep understanding of quantum behaviors, precise control over interfacial interactions, and awareness of cross-correlations among these factors are essential. Xene-based hybrids show immense promise for groundbreaking applications in quantum computing, flexible electronics, energy storage, and catalysis. In this timely perspective, recent discoveries of novel Xenes and their hybrids are highlighted, emphasizing correlations among synthetic parameters, structure, properties, and applications. It is anticipated that these insights will revolutionize diverse industries and technologies.

Realization of Honeycomb Tellurene with Topological Edge States

The two-dimensional (2D) honeycomb lattice has attracted intensive research interest due to the appearance of Dirac-type band structures as the consequence of two sublattices in the honeycomb structure. Introducing strong spin-orbit coupling (SOC) leads to a gap opening at the Dirac point, transforming the honeycomb lattice into a 2D topological insulator as a platform for the quantum spin Hall effect (QSHE). In this work, we realize a 2D honeycomb-structured film with tellurium, the heaviest nonradioactive element in Group VI, namely, tellurene, via molecular beam epitaxy. We revealed the gap opening of 160 meV at the Dirac point due to the strong SOC in the honeycomb-structured tellurene by angle-resolved photoemission spectroscopy. The topological edge states of tellurene are detected via scanning tunneling microscopy/spectroscopy. These results demonstrate that tellurene is a novel 2D honeycomb lattice with strong SOC, and they unambiguously prove that tellurene is a promising candidate for a room-temperature QSHE system.

Realization of a two-dimensional Weyl semimetal and topological Fermi strings

A two-dimensional (2D) Weyl semimetal, akin to a spinful variant of graphene, represents a topological matter characterized by Weyl fermion-like quasiparticles in low dimensions. The spinful linear band structure in two dimensions gives rise to distinctive topological properties, accompanied by the emergence of Fermi string edge states. We report the experimental realization of a 2D Weyl semimetal, bismuthene monolayer grown on SnS(Se) substrates. Using spin and angle-resolved photoemission and scanning tunneling spectroscopies, we directly observe spin-polarized Weyl cones, Weyl nodes, and Fermi strings, providing consistent evidence of their inherent topological characteristics. Our work opens the door for the experimental study of Weyl fermions in low-dimensional materials.

Chiral Honeycomb Lattices of Nonplanar π-Conjugated Supramolecules with Protected Dirac and Flat Bands

The honeycomb lattice is a fundamental two-dimensional (2D) network that gives rise to surprisingly rich electronic properties. While its expansion to 2D supramolecular assembly is conceptually appealing, its realization is not straightforward because of weak intermolecular coupling and the strong influence of a supporting substrate. Here, we show that the application of a triptycene derivative with phenazine moieties, Trip-Phz, solves this problem due to its strong intermolecular π-π pancake bonding and nonplanar geometry. Our scanning tunneling microscopy (STM) measurements demonstrate that Trip-Phz molecules self-assemble on a Ag(111) surface to form chiral and commensurate honeycomb lattices. Electronically, the network can be viewed as a hybrid of honeycomb and kagome lattices. The Dirac and flat bands predicted by a simple tight-binding model are reproduced by total density functional theory (DFT) calculations, highlighting the protection of the molecular bands from the Ag(111) substrate. The present work offers a rational route for creating chiral 2D supramolecules that can simultaneously accommodate pristine Dirac and flat bands.

Electric-field-controlled electronic structures and quantum transport in monolayer InSe nanoribbons

Electronic structures and quantum transport properties of the monolayer InSe nanoribbons are studied by adopting the tight-binding model in combination with the lattice Green function method. Besides the normal bulk and edge electronic states, a unique electronic state dubbed as edge-surface is found in the InSe nanoribbon with zigzag edge type. In contrast to the zigzag InSe nanoribbon, a singular electronic state termed as bulk-surface is observed along with the normal bulk and edge electronic states in the armchair InSe nanoribbons. Moreover, the band gap, the transversal electron probability distributions in the two sublayers, and the electronic state of the topmost valence subband can be manipulated by adding a perpendicular electric field to the InSe nanoribbon. Further study shows that the charge conductance of the two-terminal monolayer InSe nanoribbons can be switched on or off by varying the electric field strength. In addition, the transport of the bulk electronic state is delicate to even a weak disorder strength, however, that of the edge and edge-surface electronic states shows a strong robustness against to the disorders. These findings may be helpful to understand the electronic characteristics of the InSe nanostructures and broaden their potential applications in two-dimensional nanoelectronic devices as well.

Realization of monolayer ZrTe5 topological insulators with wide band gaps

Two-dimensional topological insulators hosting the quantum spin Hall effect have application potential in dissipationless electronics. To observe the quantum spin Hall effect at elevated temperatures, a wide band gap is indispensable to efficiently suppress bulk conduction. Yet, most candidate materials exhibit narrow or even negative band gaps. Here, via elegant control of van der Waals epitaxy, we have successfully grown monolayer ZrTe5 on a bilayer graphene/SiC substrate. The epitaxial ZrTe5 monolayer crystalizes in two allotrope isomers with different intralayer alignments of ZrTe3 prisms. Our scanning tunneling microscopy/spectroscopy characterization unveils an intrinsic full band gap as large as 254 meV and one-dimensional edge states localized along the periphery of the ZrTe5 monolayer. First-principles calculations further confirm that the large band gap originates from strong spin-orbit coupling, and the edge states are topologically nontrivial. These findings thus provide a highly desirable material platform for the exploration of the high-temperature quantum spin Hall effect.

Imaging the Breakdown and Restoration of Topological Protection in Magnetic Topological Insulator MnBi2Te4

Quantum anomalous Hall (QAH) insulators transport charge without resistance along topologically protected chiral 1D edge states. Yet, in magnetic topological insulators to date, topological protection is far from robust, with zero-magnetic field QAH effect only realized at temperatures an order of magnitude below the Néel temperature TN, though small magnetic fields can stabilize QAH effect. Understanding why topological protection breaks down is therefore essential to realizing QAH effect at higher temperatures. Here a scanning tunneling microscope is used to directly map the size of exchange gap (Eg,ex) and its spatial fluctuation in the QAH insulator 5-layer MnBi2Te4. Long-range fluctuations of Eg,ex are observed, with values ranging between 0 (gapless) and 70 meV, appearing to be uncorrelated to individual surface point defects. The breakdown of topological protection is directly imaged, showing that the gapless edge state, the hallmark signature of a QAH insulator, hybridizes with extended gapless regions in the bulk. Finally, it is unambiguously demonstrated that the gapless regions originate from magnetic disorder, by demonstrating that a small magnetic field restores Eg,ex in these regions, explaining the recovery of topological protection in magnetic fields. The results indicate that overcoming magnetic disorder is the key to exploiting the unique properties of QAH insulators.

Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials

Confining materials to two-dimensional forms changes the behaviour of the electrons and enables the creation of new devices. However, most materials are challenging to produce as uniform, thin crystals. Here we present a synthesis approach where thin crystals are grown in a nanoscale mould defined by atomically flat van der Waals (vdW) materials. By heating and compressing bismuth in a vdW mould made of hexagonal boron nitride, we grow ultraflat bismuth crystals less than 10 nm thick. Due to quantum confinement, the bismuth bulk states are gapped, isolating intrinsic Rashba surface states for transport studies. The vdW-moulded bismuth shows exceptional electronic transport, enabling the observation of Shubnikov-de Haas quantum oscillations originating from the (111) surface state Landau levels. By measuring the gate-dependent magnetoresistance, we observe multi-carrier quantum oscillations and Landau level splitting, with features originating from both the top and bottom surfaces. Our vdW mould growth technique establishes a platform for electronic studies and control of bismuth's Rashba surface states and topological boundary modes1-3. Beyond bismuth, the vdW-moulding approach provides a low-cost way to synthesize ultrathin crystals and directly integrate them into a vdW heterostructure.

Bias-Free Access to Orbital Angular Momentum in Two-Dimensional Quantum Materials

The demonstration of a topological band inversion constitutes the most elementary proof of a quantum spin Hall insulator (QSHI). On a fundamental level, such an inverted band gap is intrinsically related to the bulk Berry curvature, a gauge-invariant fingerprint of the wave function's quantum geometric properties in Hilbert space. Intimately tied to orbital angular momentum (OAM), the Berry curvature can be, in principle, extracted from circular dichroism in angle-resolved photoemission spectroscopy (CD-ARPES), were it not for interfering final state photoelectron emission channels that obscure the initial state OAM signature. Here, we outline a full-experimental strategy to avoid such interference artifacts and isolate the clean OAM from the CD-ARPES response. Bench-marking this strategy for the recently discovered atomic monolayer system indenene, we demonstrate its distinct QSHI character and establish CD-ARPES as a scalable bulk probe to experimentally classify the topology of two-dimensional quantum materials with time reversal symmetry.

Fabrication and Application of Grinding Wheels with Soft and Hard Composite Structures for Silicon Carbide Substrate Precision Processing

In silicon carbide processing, the surface and subsurface damage caused by fixed abrasive grinding significantly affects the allowance of the next polishing process. A novel grinding wheel with a soft and hard composite structure was fabricated for the ultra-precision processing of SiC substrates, and the grinding performance of the grinding wheel was assessed in this study. Different types of gels, heating temperatures, and composition ratios were used to fabricate the grinding wheel. The grinding performance of the grinding wheel was investigated based on the surface integrity and subsurface damage of SiC substrates. The results showed that the grinding wheel with a soft and hard composite structure was successfully fabricated using freeze-dried gel with a heating temperature of 110 °C, and the component ratio of resin to gel was 4:6. A smooth SiC substrate surface with almost no cracks was obtained after processing with the grinding wheel. The abrasive exposure height was controlled by manipulating the type and ratio of the gel. Furthermore, the cutting depth in nanoscale could be achieved by controlling the abrasive exposure height. Therefore, the fabrication and application of the grinding wheels with soft and hard composite structures is important for the ultra-precision processing of large-size SiC substrates.

Air-Stable, Large-Area 2D Metals and Semiconductors

Two-dimensional (2D) materials are popular for fundamental physics study and technological applications in next-generation electronics, spintronics, and optoelectronic devices due to a wide range of intriguing physical and chemical properties. Recently, the family of 2D metals and 2D semiconductors has been expanding rapidly because they offer properties once unknown to us. One of the challenges to fully access their properties is poor stability in ambient conditions. In the first half of this Review, we briefly summarize common methods of preparing 2D metals and highlight some recent approaches for making air-stable 2D metals. Additionally, we introduce the physicochemical properties of some air-stable 2D metals recently explored. The second half discusses the air stability and oxidation mechanisms of 2D transition metal dichalcogenides and some elemental 2D semiconductors. Their air stability can be enhanced by optimizing growth temperature, substrates, and precursors during 2D material growth to improve material quality, which will be discussed. Other methods, including doping, postgrowth annealing, and encapsulation of insulators that can suppress defects and isolate the encapsulated samples from the ambient environment, will be reviewed.

Substrate suppression of oxidation process in pnictogen monolayers

2D materials present an interesting platform for device designs. However, oxidation can drastically change the system's properties, which need to be accounted for. Through ab initio calculations, we investigated freestanding and SiC-supported As, Sb, and Bi mono-elemental layers. The oxidation process occurs through an O2 spin-state transition, accounted for within the Landau-Zener transition. Additionally, we have investigated the oxidation barriers and the role of spin-orbit coupling. Our calculations pointed out that the presence of SiC substrate reduces the oxidation time scale compared to a freestanding monolayer. We have extracted the energy barrier transition, compatible with our spin-transition analysis. Besides, spin-orbit coupling is relevant to the oxidation mechanisms and alters time scales. The energy barriers decrease as the pnictogen changes from As to Sb to Bi for the freestanding systems, while for SiC-supported, they increase across the pnictogen family. Our computed energy barriers confirm the enhanced robustness against oxidation for the SiC-supported systems.

Achieving environmental stability in an atomically thin quantum spin Hall insulator via graphene intercalation

Atomic monolayers on semiconductor surfaces represent an emerging class of functional quantum materials in the two-dimensional limit - ranging from superconductors and Mott insulators to ferroelectrics and quantum spin Hall insulators. Indenene, a triangular monolayer of indium with a gap of ~ 120 meV is a quantum spin Hall insulator whose micron-scale epitaxial growth on SiC(0001) makes it technologically relevant. However, its suitability for room-temperature spintronics is challenged by the instability of its topological character in air. It is imperative to develop a strategy to protect the topological nature of indenene during ex situ processing and device fabrication. Here we show that intercalation of indenene into epitaxial graphene provides effective protection from the oxidising environment, while preserving an intact topological character. Our approach opens a rich realm of ex situ experimental opportunities, priming monolayer quantum spin Hall insulators for realistic device fabrication and access to topologically protected edge channels.

Topological electronic states in holey graphyne

We unveil that the holey graphyne (HGY), a two-dimensional carbon allotrope where benzene rings are connected by two -C≡C- bonds fabricated recently in a bottom-up way, exhibits topological electronic states. Using first-principles calculations and Wannier tight-binding modeling, we discover a higher-order topological invariant associated withC2symmetry of the material, and show that the resultant corner modes appear in nanoflakes matching to the structure of precursor reported previously, which are ready for direct experimental observations. In addition, we find that a band inversion between emergentg-like andh-like orbitals gives rise to a nontrivial topology characterized byZ2invariant protected by an energy gap as large as 0.52 eV, manifesting helical edge states mimicking those in the prominent quantum spin Hall effect, which can be accessed experimentally after hydrogenation in HGY. We hope these findings trigger interests towards exploring the topological electronic states in HGY and related future electronics applications.

Realization of large-area ultraflat chiral blue phosphorene

Blue phosphorene (BlueP), a theoretically proposed phosphorous allotrope with buckled honeycomb lattice, has attracted considerable interest due to its intriguing properties. Introducing chirality into BlueP can further enrich its physical and chemical properties, expanding its potential for applications. However, the synthesis of chiral BlueP remains elusive. Here, we demonstrate the growth of large-area BlueP films on Cu(111), with lateral size limited by the wafer dimensions. Importantly, we discovered that the BlueP is characterized by an ultraflat honeycomb lattice, rather than the prevailing buckled structure, and develops highly ordered spatial chirality plausibly resulting from the rotational stacking with the substrate and interface strain release, as further confirmed by the geometric phase analysis. Moreover, spectroscopic measurements reveal its intrinsic metallic nature and different characteristic quantum oscillations in the image-potential states, which can be exploited for a range of potential applications including polarization optics, spintronics, and chiral catalysis.

Rational Design of Stimuli-Responsive Inorganic 2D Materials via Molecular Engineering: Toward Molecule-Programmable Nanoelectronics

The ability of electronic devices to act as switches makes digital information processing possible. Succeeding graphene, emerging inorganic 2D materials (i2DMs) have been identified as alternative 2D materials to harbor a variety of active molecular components to move the current silicon-based semiconductor technology forward to a post-Moore era focused on molecule-based information processing components. In this regard, i2DMs benefits are not only for their prominent physiochemical properties (e.g., the existence of bandgap), but also for their high surface-to-volume ratio rich in reactive sites. Nonetheless, since this field is still in an early stage, having knowledge of both i) the different strategies for molecularly functionalizing the current library of i2DMs, and ii) the different types of active molecular components is a sine qua non condition for a rational design of stimuli-responsive i2DMs capable of performing logical operations at the molecular level. Consequently, this Review provides a comprehensive tutorial for covalently anchoring ad hoc molecular components-as active units triggered by different external inputs-onto pivotal i2DMs to assess their role in the expanding field of molecule-programmable nanoelectronics for electrically monitoring bistable molecular switches. Limitations, challenges, and future perspectives of this emerging field which crosses materials chemistry with computation are critically discussed.

Experimental Realization of Monolayer α-Tellurene

2D materials emerge as a versatile platform for developing next-generation devices. The experimental realization of novel artificial 2D atomic crystals, which does not have bulk counterparts in nature, is still challenging and always requires new physical or chemical processes. Monolayer α-tellurene is predicted to be a stable 2D allotrope of tellurium (Te), which has great potential for applications in high-performance field-effect transistors. However, the synthesis of monolayer α-tellurene remains elusive because of its complex lattice configuration, in which the Te atoms are stacked in tri-layers in an octahedral fashion. Here, a self-assemble approach, using three atom-long Te chains derived from the dynamic non-equilibrium growth of an a-Si:Te alloy as building blocks, is reported for the epitaxial growth of monolayer α-tellurene on a Sb2 Te3 substrate. By combining scanning tunneling microscopy/spectroscopy with density functional theory calculations, the surface morphology and electronic structure of monolayer α-tellurene are revealed and the underlying growth mechanism is determined. The successful synthesis of monolayer α-tellurene opens up the possibility for the application of this new single-element 2D material in advanced electronic devices.

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.

Emergence of quasi-1D spin-polarized states in ultrathin Bi films on InAs(111)A for spintronics applications

The discovery, characterization, and control of heavy-fermion low-dimensional materials are central to nanoscience since quantum phenomena acquire an exotic and highly tunable character. In this work, through a variety of comprehensive experimental and theoretical techniques, it was observed and predicted that the synthesis of ultrathin Bi films on the InAs(111)A surface produces quasi-one-dimensional spin-polarized states, providing a platform for the realization of a unique spin-transport regime in the system. Scanning tunneling microscopy and low-energy electron diffraction measurements revealed that the InAs(111)A substrate facilitates the formation of the Bi-dimer phase of 2√3 × 3 periodicity with an admixture of the Bi-bilayer phase under submonolayer Bi deposition. X-ray photoelectron spectroscopy (XPS) measurements have shown the chemical stability of the Bi-induced phases, while spin and angle resolved photoemission spectroscopy (SARPES) observations combined with state-of-the-art DFT calculations have revealed that the electronic spectrum of the Bi-dimer phase holds a quasi-1D hole-like spin-split state at the Fermi level with advanced spin texture, whereas the Bi-bilayer phase demonstrates metallic states with large Rashba spin-splitting. The band structure of the Bi/InAs(111)A interface is discovered to hold great potential as a high-performance spintronics material fabricated in the ultimate two-dimensional limit.

Probing Spin-Dependent Ballistic Charge Transport at Single-Nanometer Length Scales

The coherent transport of charge and spin is a key requirement of future devices for quantum computing and communication. Scattering at defects or impurities may significantly reduce the coherence of quantum-mechanical states, thereby affecting the device functionality. While numerous methods exist to experimentally assess charge transport, the real-space detection of a material's ballistic spin transport properties with nanometer resolution remains a challenge. Here we report on a novel approach that utilizes a combination of spin-polarized scanning tunneling microscopy (SP-STM) and the recently introduced molecular nanoprobe (MONA) technique. It relies on the local injection of spin-polarized charge carriers from a magnetic STM tip and their detection by a single surface-deposited phthalocyanine molecule via reversible electron-induced tautomerization events. Based on the particular electronic structure of the Rashba alloy BiAg2, which is governed by a spin-momentum-locked surface state, we prove that the current direction inverses upon tip magnetization reversal.

Extendable piezo/ferroelectricity in nonstoichiometric 2D transition metal dichalcogenides

Engineering piezo/ferroelectricity in two-dimensional materials holds significant implications for advancing the manufacture of state-of-the-art multifunctional materials. The inborn nonstoichiometric propensity of two-dimensional transition metal dichalcogenides provides a spiffy ready-available solution for breaking inversion centrosymmetry, thereby conducing to circumvent size effect challenges in conventional perovskite oxide ferroelectrics. Here, we show the extendable and ubiquitous piezo/ferroelectricity within nonstoichiometric two-dimensional transition metal dichalcogenides that are predominantly centrosymmetric during standard stoichiometric cases. The emerged piezo/ferroelectric traits are aroused from the sliding of van der Waals layers and displacement of interlayer metal atoms triggered by the Frankel defects of heterogeneous interlayer native metal atom intercalation. We demonstrate two-dimensional chromium selenides nanogenerator and iron tellurides ferroelectric multilevel memristors as two representative applications. This innovative approach to engineering piezo/ferroelectricity in ultrathin transition metal dichalcogenides may provide a potential avenue to consolidate piezo/ferroelectricity with featured two-dimensional materials to fabricate multifunctional materials and distinguished multiferroic.

Novel Ultra-Stable 2D SbBi Alloy Structure with Precise Regulation Ratio Enables Long-Stable Potassium/Lithium-Ion Storage

The inferior cycling stabilities or low capacities of 2D Sb or Bi limit their applications in high-capacity and long-stability potassium/lithium-ion batteries (PIBs/LIBs). Therefore, integrating the synergy of high-capacity Sb and high-stability Bi to fabricate 2D binary alloys is an intriguing and challenging endeavor. Herein, a series of novel 2D binary SbBi alloys with different atomic ratios are fabricated using a simple one-step co-replacement method. Among these fabricated alloys, the 2D-Sb0.6 Bi0.4 anode exhibits high-capacity and ultra-stable potassium and lithium storage performance. Particularly, the 2D-Sb0.6 Bi0.4 anode has a high-stability capacity of 381.1 mAh g-1 after 500 cycles at 0.2 A g-1 (≈87.8% retention) and an ultra-long-cycling stability of 1000 cycles (0.037% decay per cycle) at 1.0 A g-1 in PIBs. Besides, the superior lithium and potassium storage mechanism is revealed by kinetic analysis, in-situ/ex-situ characterization techniques, and theoretical calculations. This mainly originates from the ultra-stable structure and synergistic interaction within the 2D-binary alloy, which significantly alleviates the volume expansion, enhances K+ adsorption energy, and decreases the K+ diffusion energy barrier compared to individual 2D-Bi or 2D-Sb. This study verifies a new scalable design strategy for creating 2D binary (even ternary) alloys, offering valuable insights into their fundamental mechanisms in rechargeable batteries.

Sandwiched Epitaxy Growth of 2D Single-Crystalline Hexagonal Bismuthene Nanoflakes for Electrocatalytic CO2 Reduction

Two-dimensional (2D) bismuthene is predicted to possess intriguing physical properties, but its preparation remains challenging due to the high surface energy constraint. Herein, we report a sandwiched epitaxy growth strategy for the controllable preparation of 2D bismuthene between a Cu foil substrate and a h-BN covering layer. The top h-BN layer plays a crucial role in suppressing the structural transformation of bismuthene and compensating for the charge transfer from the bismuthene to the Cu(111) surface. The bismuthene nanoflakes present a superior thermal stability up to 500 °C in air, attributed to the passivation effect of the h-BN layer. Moreover, the bismuthene nanoflakes demonstrate an ultrahigh faradaic efficiency of 96.3% for formate production in the electrochemical CO2 reduction reaction, which is among the highest reported for Bi-based electrocatalysts. This study offers a promising approach to simultaneously synthesize and protect 2D bismuthene nanoflakes, which can be extended to other 2D materials with a high surface energy.

Strain and atomic stacking of bismuth thin film in its quasi-van der Waals epitaxy on (111) Si substrate

We report on the structural properties of Bi thin films grown on (111) Si substrates with a thickness of 22-30 BL. HRXRD and EBSD measurements show that these Bi films are mainly composed of twinning grains in the (0003) direction. The grain size can be as large as tens of microns. From a double-peak (01[Formula: see text]4) φ-scan, we found two pairs of twinning phases coexisting with a rotation angle of ~ 3.6°. We proposed a coincidence site lattice model based on preferential close-packed sites for Bi atoms on Si (111) surface to explain the coexistence of the rotation phases in the quasi-van der Waals epitaxy. From the measured lattice constants c and a of our samples, along with the data from the literature, we derived a c-a relation: (c-c0) = - 2.038(a-a0), where c0 and a0 are the values of bulk Bi. The normalized position of the second basis atom in the unit cell x, in these strained Bi films is found very close to that of bulk Bi, indicating that the strain does not disturb the Peierls distortion of the lattice. The fixed ratio of bilayer thickness to lattice constant c, reveals that the elastic properties of covalent-bonded bilayer dominate those of Bi crystal.

Two-Dimensional Artificial Ge Superlattice Confining in Electronic Kagome Lattice Potential Valleys

Constructing two-dimensional (2D) artificial superlattices based on single-atom and few-atom nanoclusters is of great interest for exploring exotic physics. Here we report the realization of two types of artificial germanium (Ge) superlattice self-confined by a 37 × 37 R25.3° superstructure of bismuth (Bi) induced electronic kagome lattice potential valleys. Scanning tunneling microscopy measurements demonstrate that Ge atoms prefer to be confined in the center of the Bi electronic kagome lattice, forming a single-atom superlattice at 120 K. In contrast, room temperature grown Ge atoms and clusters are confined in the sharing triangle corner and the center, respectively, of the kagome lattice potential valleys, forming an artificial honeycomb superlattice. First-principle calculations and Mulliken population analysis corroborate that our reported atomically thin Bi superstructure on Au(111) has a kagome surface potential valley with the center of the inner Bi hexagon and the space between the outer Bi hexagons being energetically favorable for trapping Ge atoms.

Identifying topological corner states in two-dimensional metal-organic frameworks

Due to the diversity of molecular building blocks, the two-dimensional (2D) metal-organic frameworks (MOFs) are ideal platforms to realize exotic lattice models in condensed matter theory. In this work, we demonstrate the universal existence of topological corner states in 2D MOFs with a star lattice configuration, and confirm the intriguing higher-order nontrivial topology in the energy window between two Kagome-bands, or between Dirac-band and four-band. Furthermore, combining first-principles calculations and scanning tunneling microscopy measurements, the unique topological corner state is directly identified in monolayer Ni3(HITP)2 (HITP = 2,3,6,7,10,11-hexaiminotriphenylene) grown on the Au(111) substrate. Our results not only illustrate the first organic topological state in the experiments, but also offer an exciting opportunity to study higher-order topology in 2D MOFs with the large insulating band gap.